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2N7002

60V N-Channel Enhancement Mode MOSFET

FEATURES

0.006(0.15)MIN.
RDS(ON), VGS@10V,IDS@500mA=5 0.120(3.04)
0.110(2.80)

RDS(ON), VGS@4.5V,IDS@75mA=7.5

Advanced Trench Process Technology


0.056(1.40)

High Density Cell Design For Ultra Low On-Resistance 0.047(1.20)

Specially Designed for Battery Operated Systems, Solid-State Relays 0.079(2.00) 0.008(0.20)
0.070(1.80) 0.003(0.08)

Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.


Lead free in comply with EU RoHS 2011/65/EU directives 0.004(0.10) 0.044(1.10)
0.035(0.90)
Green molding compound as per IEC61249 Std. . (Halogen Free) 0.000(0.00)

0.020(0.50)
0.013(0.35)

MECHANICALDATA
Case : SOT-23 Package
Terminals : Solderable per MIL-STD-750,Method 2026
Approx. Weight : 0.0003 ounces, 0.008 grams
Marking : S72

Maximum Ratings and Thermal Characteristics (TA=25OC unless otherwise noted )

PA RA M E TE R S ym b o l Li mi t U ni t s

D r a i n- S o ur c e Vo l t a g e VD S 60 V

G a t e - S o ur c e Vo l t a g e VGS +20 V

C o nt i nuo us D r a i n C ur r e nt ID 250 mA

1)
P ul s e d D r a i n C ur r e nt ID M 1300 mA

O
TA = 2 5 C 350
M a xi m um P o w e r D i s s i p a t i o n PD mW
TA = 7 5 O C 210

O
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e TJ , TS T G -5 5 to + 1 5 0 C

Juncti on-to Ambi ent Thermal Resi stance(PC B mounted)2 RJ A 357 O


C /W

Note:1. Maximum DC current limited by the package


2. Surface mounted on FR4 board, t < 10 sec

August 29,2013-REV.03 PAGE . 1


2N7002
ELECTRICALCHARACTERISTICS

P a ra me te r S ym b o l Te s t C o n d i t i o n M i n. Ty p . M a x. U ni t s

S ta ti c

D r a i n- S o ur c e B r e a k d o w n Vo l t a g e B V DSS V G S = 0 V , ID = 1 0 u A 60 - - V

G a t e Thr e s ho l d Vo l t a g e V G S ( t h) V D S = V G S , ID = 2 5 0 u A 1 - 2 .5 V

D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e R D S ( o n) VGS=4.5V, I D=75mA - - 7 .5

D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e R D S ( o n) VGS=10V, I D=500mA - - 5

Ze r o G a t e Vo l t a g e D r a i n C ur r e nt ID S S VDS=60V, VGS=0V - - 1 uA

Gate Body Leakage IG S S V G S =+ 2 0 V , V D S = 0 V - - +100 nA

Forward Transconductance g fS V D S = 1 5 V , ID = 2 5 0 m A 200 - - mS

Dynamic

To t a l G a t e C h a r g e Qg - 0 .6 0 .7

V D S = 1 5 V , ID = 5 0 0 m A
G a t e - S o ur c e C ha r g e Qgs - 0 .1 - nC
VDD=4.5V

G a t e - D r a i n C ha r g e Qgd - 0 .0 8 -

Tu r n - O n Ti m e ton VDD=10V , RL=20 - 9 15


ID=500mA , VGEN=10V ns
Tu r n - O f f Ti m e t o ff RG=10 - 21 26

In p u t C a p a c i t a n c e C iss - - 50

V D S = 2 5 V , V GS = 0 V
O ut p ut C a p a c i t a nc e C oss - - 25 pF
f=1 .0 MHZ

R e v e r s e Tr a n s f e r C a p a c i t a n c e C rss - - 5

S o ur c e - D r a i n D i o d e

M a x. D i o d e F o r w a r d C ur r e nt Is - - - 250 mA

D i o d e F o rwa rd Vo lta g e V SD IS = 2 5 0 m A , V G S = 0 V - 0 .9 3 1 .2 V

Switching V DD Gate Charge V DD


Test Circuit Test Circuit
V IN RL V GS RL

V OUT

1mA
RG

RG

August 29,2013-REV.03 PAGE . 2


2N7002
O
Typical Characteristics Curves (TA=25 C,unless otherwise noted)

1.2 1.2
VDS =10V
ID - Drain-to-Source Current (A)

ID - Drain Source Current (A)


V GS= 6.0~10V
1 5.0V 1
4.0V
0.8 0.8

0.6 0.6

0.4 0.4
o
3.0V T J=25 C
0.2 0.2

0 0
0 1 2 3 4 5 0 1 2 3 4 5 6

VDS - Drain-to-Source Voltage (V)


VGS - Gate-to-Source Voltage (V)

Fig. 1-TYPICAL FORWARD


FIG.1- Output CHARACTERISTIC
Characteristic FIG.2- Transfer Characteristic

5 10
I D =500mA
RDS(ON) - On-Resistance ( W )
RDS(ON) - On-Resistance ( W )

4 8

3 V GS = 4.5V 6

2 4 T J=125 oC

1 VGS=10V 2
o
T J=25 C
0 0
0 0.2 0.4 0.6 0.8 1 1.2 2 3 4 5 6 7 8 9 10

ID - Drain Current (A) V GS - Gate-to-Source Voltage (V)

FIG.3- On Resistance vs Drain Current FIG.4- On Resistance vs Gate to Source Voltage

2
RDS(ON) - On-Resistance(Normalized)

VGS =10V
1.8
ID =500mA
1.6

1.4

1.2

0.8

0.6

0.4
-50 -25 0 25 50 75 100 125 150
o
TJ - Junction Temperature ( C)

FIG.5- On Resistance vs Junction Temperature

August 29,2013-REV.03 PAGE . 3


2N7002

10
Vgs

V GS - Gate-to-Source Voltage (V)


VDS=15V
Qg
8 ID=500mA

2
Vgs(th) Qsw

0
Qg(th)
0 0.2 0.4 0.6 0.8 1
Qgs Qgd Qg
Qg - Gate Charge (nC)

Fig.6 - Gate Charge Waveform Fig.7 - Gate Charge


Vth - G-S Th r esh o l d Vo l tag e (NORMA L IZED)

1.2 73
BVDSS - Breakdown Voltage (V)

ID =250 m A I D = 250 m A
72
1.1
71
1 70
69
0.9
68
0.8 67
66
0.7
65
0.6 64
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
o o
TJ - Junction Temperature ( C) TJ - Junction Temperature ( C)

Fig.8 - Threshold Voltage vs Temperature Fig.9 - Breakdown Voltage vs Junction Temperature

10 80
VGS = 0V f = 1MHz
70 V GS = 0V
IS - Source Current (A)

60
C - Capacitance (pF)

1 o
T J=25 C 50
Ciss
40
TJ =125 oC
T J=-55 oC
0.1 30

20
Coss
10
0.01 Crss
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0
0 5 10 15 20 25
VSD - Source-to-Drain Voltage (V) VDS - Drain-to-Source Voltage (V)

Fig.10 - Source-Drain Diode Forward Voltage Fig.11 - Capacitance vs Drain to Source Voltage

August 29,2013-REV.03 PAGE . 4


2N7002

MOUNTING PAD LAYOUT

(0.90) MIN.
0.035 MIN. 0.031 MIN.
(0.80) MIN.

(1.10)

(2.00)
0.043

0.078
0.037
(0.95)

0.043
(1.10)

0.106
(2.70)

ORDER INFORMATION

Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7" plastic Reel

August 29,2013-REV.03 PAGE . 5


2N7002

Part No_packing code_Version


2N7002_R1_00001
2N7002_R2_00001

For example :
RB500V-40_R2_00001
Serial number
Part No. Version code means HF
Packing size code means 13"
Packing type means T/R

Packing Code XX Version Code XXXXX

Packing type 1st Code Packing size code 2nd Code HF or RoHS 1st Code 2nd~5th Code

Tape and Ammunition Box


A N/A 0 HF 0 serial number
(T/B)
Tape and Reel
R 7" 1 RoHS 1 serial number
(T/R)
Bulk Packing
B 13" 2
(B/P)
Tube Packing
T 26mm X
(T/P)
Tape and Reel (Right Oriented)
S 52mm Y
(TRR)
Tape and Reel (Left Oriented) PANASERT T/B CATHODE UP
L U
(TRL) (PBCU)
PANASERT T/B CATHODE DOWN
FORMING F D
(PBCD)

August 29,2013-REV.03 PAGE . 6


2N7002

Disclaimer

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from Panjit International Inc..

Panjit International Inc. reserves the rights to make changes of the content herein the
document anytime without notification. Please refer to our website for the latest
document.

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any product including damages incidentally and consequentially occurred.

Panjit International Inc. does not assume any and all implied warranties, including warranties
of fitness for particular purpose, non-infringement and merchantability.

Applications shown on the herein document are examples of standard use and operation.
Customers are responsible in comprehending the suitable use in particular applications.
Panjit International Inc. makes no representation or warranty that such applications will be
suitable for the specified use without further testing or modification.

The products shown herein are not designed and authorized for equipments requiring high
level of reliability or relating to human life and for any applications concerning life-saving
or life-sustaining, such as medical instruments, transportation equipment, aerospace
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do so at their own risk and agree to fully indemnify Panjit International Inc. for any damages
resulting from such improper use or sale.

Since Panjit uses lot number as the tracking base, please provide the lot number for tracking
when complaining.

August 29,2013-REV.03 PAGE . 7


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