Advance Technical Data

HiPerFASTTM IGBT IXGH 60N60B2 VCES = 600 V

IXGT 60N60B2 IC25 = 75 A
Optimized for 10-25 kHz hard VCE(sat) < 1.8 V
switching and up to 100 KHz tfi typ = 100 ns
resonant switching

Symbol Test Conditions Maximum Ratings TO-268

(IXGT)
VCES TJ = 25C to 150C 600 V
VCGR TJ = 25C to 150C; RGE = 1 M 600 V G
E C (TAB)
VGES Continuous 20 V
VGEM Transient 30 V
IC25 TC = 25C (limited by leads) 75 A TO-247 AD
IC110 TC = 110C 60 A (IXGH)
ICM TC = 25C, 1 ms 300 A
SSOA VGE = 15 V, TVJ = 125C, RG = 10 ICM = 150 A C (TAB)
(RBSOA) Clamped inductive load @ 600 V G
C
PC TC = 25C 500 W E

TJ -55 ... +150 C G = Gate, C = Collector,

E = Emitter, TAB = Collector
TJM 150 C
Tstg -55 ... +150 C
Features
Maximum lead temperature for soldering 300 C
1.6 mm (0.062 in.) from case for 10 s z
Medium frequency IGBT
Md Mounting torque (M3) 1.13/10 Nm/lb.in. z
Square RBSOA
z
High current handling capability
z
MOS Gate turn-on
Weight TO-247 AD 6 g - drive simplicity
TO-268 SMD 4 g
Applications

z
PFC circuits
Symbol Test Conditions Characteristic Values
z
Uninterruptible power supplies (UPS)
(TJ = 25C, unless otherwise specified)
z
Switched-mode and resonant-mode
min. typ. max. power supplies
z
AC motor speed control
VGE(th) IC = 250 A, VCE = VGE 3.0 5.0 V
z
DC servo and robot drives
z
DC choppers
ICES VCE = VCES TJ = 25C 50 A
VGE = 0 V TJ = 150C 1 mA

IGES VCE = 0 V, VGE = 20 V 100 nA

VCE(sat) IC = 50 A, VGE = 15 V TJ = 25C 1.8 V

Note 1.

2003 IXYS All rights reserved DS99113(11/03)

 IXGH 60N60B2
IXGT 60N60B2

Symbol Test Conditions Characteristic Values TO-247 AD Outline

(TJ = 25C, unless otherwise specified)
Min. Typ. Max.
gfs IC = 50 A; VCE = 10 V, 40 58 S
Note 1 P

Cies 3900 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 290 pF
Cres 100 pF

Qg 170 nC
Qge IC = 50 A, VGE = 15 V, VCE = 0.5 VCES 25 nC e

Qgc 57 nC Dim. Millimeter Inches

Min. Max. Min. Max.
A 4.7 5.3 .185 .209
td(on) 28 ns
Inductive load, TJ = 25C A1 2.2 2.54 .087 .102
tri 30 ns A2 2.2 2.6 .059 .098
IC = 50 A, VGE = 15 V b 1.0 1.4 .040 .055
td(off) 160 270 ns b1 1.65 2.13 .065 .084
VCE = 400 V, RG = 3.3 b2 2.87 3.12 .113 .123
tfi 100 170 ns
Note 1 C .4 .8 .016 .031
Eoff 1.0 2.5 mJ D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
td(on) 28 ns e 5.20 5.72 0.205 0.225
Inductive load, TJ = 125C
tri 36 ns L 19.81 20.32 .780 .800
IC = 50 A, VGE = 15 V L1 4.50 .177
Eon 0.6 mJ P 3.55 3.65 .140 .144
td(off) VCE = 400 V, RG = 3.3 310 ns Q 5.89 6.40 0.232 0.252
tfi Note 1 240 ns R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Eoff 2.8 mJ
RthJC 0.25 K/W TO-268 Outline
RthCK 0.15 K/W

Notes:
1. Pulse test, t < 300s wide, duty cycle < 2%.

Min. Recommended Footprint

(Dimensions in inches and mm)

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
of the following U.S. patents: 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
 IXGH 60N60B2
IXGT 60N60B2
Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics
@ 25 Deg. C @ 25 deg. C
100 350
VGE = 15V VGE = 15V
90 9V
13V 300 13V 11V
80 11V

70 250
9V
I C - Amperes

I C - Amperes
60 7V
200
50
150
40
7V
30
100
20
50
10 5V
5V
0 0
0.5 1 1.5 2 2.5 3 0 1 2 3 4 5 6 7 8
V C E - Volts V C E - Volts

Fig. 3. Output Characteristics Fig. 4. Dependence of V CE(sat) on

@ 125 Deg. C Tem perature
100 1.4
VGE = 15V 9V
90 13V V GE = 15V
1.3
80 11V
I C = 100A
1.2
V C E (sat)- Normalized

70 7V
I C - Amperes

1.1
60

50 1.0 I C = 50A

40
0.9
30
0.8
20
5V 0.7 I C = 25A
10

0 0.6
0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150
V CE - Volts TJ - Degrees Centigrade

Fig. 5. Collector-to-Em itter Voltage

vs. Gate-to-Em itter voltage Fig. 6. Input Adm ittance
3.7 300
TJ = 25C
3.4
250
3.1
I C = 100A 200
I C - Amperes

2.8
VC E - Volts

50A
25A
2.5 150

2.2
100

1.9 TJ = 125C
50 -40C TJ = 25C
1.6

1.3 0

5 6 7 8 9 10 11 12 13 14 15 16 17 4 5 6 7 8 9 10
V G E - Volts V G E - Volts

2003 IXYS All rights reserved

 IXGH 60N60B2
IXGT 60N60B2
Fig. 8. De pendence of Turn-Off
Fig. 7. Transconductance Energy on RG
100 10
TJ = 125C
90 9
VGE = 15V
80 TJ = -40C
8 VCE = 400V
25C
70 125C

E off - milliJoules
7 I C = 100A
g f s - Siemens

60
6
50
5
40

30 4 I C = 50A

20 3

10 2 I C = 25A
0 1
0 50 100 150 200 250 300 0 5 10 15 20 25 30 35 40 45 50
I C - Amperes R G - Ohms

Fig. 9. Depe nde nce of Turn-Off Fig. 10. Dependence of Turn-Off

Ene rgy on Ic Energy on Tem perature
7 7
R G = 3.3 R G = 3.3
6 VGE = 15V 6 VGE = 15V
VCE = 400V VCE = 400V
5 5
E off - MilliJoules

I C = 100A
E off - milliJoules

4 TJ = 125C 4

3 3 I C = 50A

2 2

1 TJ = 25C 1
I C = 25A
0 0
20 30 40 50 60 70 80 90 100 25 35 45 55 65 75 85 95 105 115 125
I C - Amperes TJ - Degrees Centigrade

Fig. 11. De pendence of Turn-Off Fig. 12. De pendence of Turn-Off

Sw itching Tim e on RG Sw itching Tim e on Ic
1200 400
td(off)
1100 td(off)
350 tfi - - - - - -
Switching Time - nanosecond

tfi - - - - - -
Switching Time - nanosecond

1000 R G = 3.3
TJ = 125C VGE = 15V
900 300
VGE = 15V VCE = 400V
800 VCE = 400V TJ = 125C
250
700
200
600
I C = 25A
500 I C = 50A 150
TJ = 25C
400
I C = 100A 100
300

200 50
0 5 10 15 20 25 30 35 40 45 50 20 30 40 50 60 70 80 90 100
R G - Ohms I C - Amperes
 IXGH 60N60B2
IXGT 60N60B2
Fig. 13. Dependence of Turn-Off
Fig. 14. Gate Charge
Sw itching Tim e on Tem perature
350 15
td(off) VCE = 300V
I C = 50A
300 tfi - - - - - - I C = 25A
Switching Time - nanosecond

12 I G = 10mA
R G = 3.3 50A
VGE = 15V 100A
250
VCE = 400V
9

VG E - Volts
200

6
150
I C = 100A
50A 3
100
25A

50 0
25 35 45 55 65 75 85 95 105 115 125 0 20 40 60 80 100 120 140 160 180
TJ - Degrees Centigrade Q G - nanoCoulombs

Fig. 15. Capacitance

10000
f = 1 MHz

C ies
Capacitance - p F

1000

C oes

100

C res

10
0 5 10 15 20 25 30 35 40
V C E - Volts

Fig. 16. Maxim um Transient Therm al Resistance

0.275

0.25

0.225
R (th) J C - (C/W)

0.2

0.175

0.15

0.125

0.1

0.075

0.05
1 10 100 1000
Pulse Width - milliseconds

2003 IXYS All rights reserved