NUSOD 2013
P(t ) 0 E (t ) Raman (t ) E 2 (t ) Power (dB)
( 3)
Raman
( 3) 2
Raman ( ) 2
( 3) 0
Raman 2 j Raman 2
3D Electrical Simulation with DEVICE 3
Automated, adaptive
finite element mesh
Enhanced integration
with photonic
simulation tools
New analysis tools to
simplify common tasks
Enhanced solver physics
and performance
More information:
http://docs.lumerical.com/en/device/ref_fdtd_new_features_new_features_for_version_3_0.html
Lumerical Solutions, Inc.
DEVICE > 3D Simulation
C = dQ/dV
T. Baehr-Jones, et al., Ultralow drive voltage silicon traveling-wave modulator, Optics Express, 20, 12014 (2012).
V ER 24.4dB
IL 0.4dB
Capacitance (fF/um)
0.24
0.22
0.2
0.18
0.16
-1 0 1 2 3 4
Voltage (V)
1.55m 8.5 1018 n 6.0 1018 p
2.5 6
Relative phase shift (rad.)
2 5.5
1.5
5
Loss (dB/cm)
1
4.5
0.5
0 4
measured (bot.) [1]
-0.5 measured (top) [1] 3.5
simulated
-1 3
-1 0 1 2 3 4 5 -1 0 1 2 3 4 5
Voltage (V) Voltage (V)
Microring structure
Electrical simulation: DEVICE (3D)
Optical simulation: FDTD Solutions (3D),
INTERCONNECT
Ref.: 0.65fF/um at 1V
Ref.: 35dB/cm
Waveguide-integrated 1D PC
Electrical simulation: DEVICE (3D)
Optical simulation: FDTD Solutions (3D)
Rslab Rslab
Cslot
R = V/I
C = dQ/dV
0.8nm/V