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Electro-Optic Modulators Workshop

NUSOD 2013

Lumerical Solutions, Inc.


Outline
New feature highlights
Electro-optic modulators
Circuit level view
Modulator categories
Component simulation and
parameter extraction
Electro-optic modulator examples
Travelling-wave PN junction
Interleaved PN junction in microring
Nanobeam PC with EO polymer Dylan McGuire
Senior R&D Scientist
Summary Lumerical Solutions, Inc.
Questions and answers dmcguire.support@lumerical.com

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Electro-Optic Modulators Workshop
NEW FEATURE HIGHLIGHTS

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EDA Integration with Mentor Graphics

Lumericals products can be integrated into EDA flow


Layout photonic circuits in Mentor Graphics Pyxis
Normally used for electrical circuit layout and simulation
EDA Integration with Mentor Graphics

Export circuit from Mentor Graphics Pyxis to Lumericals


INTERCONNECT for photonic circuit simulation
User Defined Material Models

MODE Solutions 2.5D FDTD Propagator supports


user defined materials
Simulate linear and nonlinear dispersive, gain effects etc
over large propagation distances


P(t ) 0 E (t ) Raman (t ) E 2 (t ) Power (dB)
( 3)

Raman
( 3) 2

Raman ( ) 2
( 3) 0

Raman 2 j Raman 2
3D Electrical Simulation with DEVICE 3

Automated, adaptive
finite element mesh
Enhanced integration
with photonic
simulation tools
New analysis tools to
simplify common tasks
Enhanced solver physics
and performance

More information:
http://docs.lumerical.com/en/device/ref_fdtd_new_features_new_features_for_version_3_0.html
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DEVICE > 3D Simulation

True 3D finite element solver


Always supported 3D CAD
Easy to extend current designs to 3D
Simulate arbitrary geometries
Improved solver performance
with multithreading

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DEVICE > Improved Analysis Tools

New E-field and charge monitors


Record carrier density (n,p),
electrostatic potential, and field
Volume/cross-section/line
Integrated analysis
Calculate total/net charge
Easy export for electro-optic
simulations
No script required!

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DEVICE > Improved Analysis Tools

Total charge integration for junction capacitance


Junction capacitance

C = dQ/dV

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Electro-Optic Modulators Workshop
ELECTRO-OPTIC MODULATORS

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Multichannel Optical Transceiver

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Circuit Model

T. Baehr-Jones, et al., Ultralow drive voltage silicon traveling-wave modulator, Optics Express, 20, 12014 (2012).

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Modulator Overview
General principle
Changing the carrier density (n, p) or electrostatic field perturbs the
material index
Charge modulation designs
PN junction (depletion mode)
PIN/PN junction (charge injection)
MOS capacitor/SISCAP
Field modulation designs
Electro-optic polymer slot and PC cavity
Guided wave structures
Travelling wave (Mach-Zehnder)
Microring resonators
Photonic crystals

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PN Junction

Reverse bias operation


Junction width modulation
Not limited by recombination lifetime
Control capacitance with design
Directly related to modulation efficiency
Low C low loss: travelling wave
High C high loss: microring

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PIN/PN

Forward bias operation (charge injection)


Carrier-lifetime limited
Strong modulation effect at the expense of large currents
Low-loss in OFF state
Shorter modulation lengths
Va

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MOS Capacitor/SISCAP

Operate in weak accumulation or inversion


Loss depends on surface charge layer
Accumulation: capacitance insensitive to frequency
Travelling wave and microring structures

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Electro-Optic Modulators > Simulation Workflow

Electrical Material Optical


simulation index simulation
I-V/C-V response From spatial Effective index
Charge/electric field charge/field data Loss
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Electro-Optic Modulators > Simulation Workflow
Va

Electrical Material Optical


simulation index simulation
I-V/C-V response From spatial Effective index
Charge/electric field charge/field data Loss
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Electro-Optic Modulators > Simulation Workflow
Va

Electrical Material Optical


simulation index simulation
I-V/C-V response From spatial Effective index
Charge/electric field charge/field data Loss
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Electro-Optic Modulators > Modulation Response
neff 2L 0
Phase change neff V
0 2L

2 neff (V1 ) L 2 neff (V2 ) L


Modulation E V1 ,V2
E0 e 0 e 0
1

IL
2 Parameter Value
E
T L 2mm
E0
ER V 0.68V

V ER 24.4dB
IL 0.4dB

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Electro-Optic Modulators > Modulation Response
neff 2L 0
Phase change neff V
0 2L

2 neff (V1 ) L 2 neff (V2 ) L


Modulation E V1 ,V2
E0 e 0 e 0
1

IL
2
E
T
E0
ER

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Electro-Optic Modulators Workshop
MACH-ZEHNDER MODULATOR

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Depletion Mode PN Junction

Travelling wave structure


Electrical simulation: DEVICE, 2D cross-section
Optical simulation: MODE Solutions, INTERCONNECT

Reference: T. Baehr-Jones, et al., Ultralow drive voltage silicon traveling-wave modulator,


Optics Express, 20, 12014 (2012).

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Depletion Mode PN Junction > C-V Simulation

Peak doping concentrations from reference


Adjusted implant profile to match C-V response
0.28
Electron density (cm-3s-1), log-scale simulated
0.26 measured [1]

Capacitance (fF/um)
0.24

0.22

0.2

0.18

0.16

-1 0 1 2 3 4
Voltage (V)

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Depletion Mode PN Junction > Phase Response

Model of Soref & Bennet used to convert carrier


density in to local refractive index
n 8.810 8.510 22 18 0.8
1.55 m n p


1.55m 8.5 1018 n 6.0 1018 p
2.5 6
Relative phase shift (rad.)

2 5.5
1.5
5

Loss (dB/cm)
1
4.5
0.5

0 4
measured (bot.) [1]
-0.5 measured (top) [1] 3.5
simulated
-1 3
-1 0 1 2 3 4 5 -1 0 1 2 3 4 5
Voltage (V) Voltage (V)

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Depletion Mode PN Junction > Transmission

Phase and loss data from


component simulations

Example project online:


http://docs.lumerical.com/en/device/integrated_optics_travelling_wave_modulator.html
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Electro-Optic Modulators Workshop
MORE ELECTRO-OPTIC MODULATOR
EXAMPLES

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Interleaved PN Junction

Microring structure
Electrical simulation: DEVICE (3D)
Optical simulation: FDTD Solutions (3D),
INTERCONNECT

Reference: J. C. Rosenberg, et al., "A 25 Gbps silicon microring modulator based on


an interleaved junction," Optics Express, 20, 26411 (2012)

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Interleaved PN Junction > C-V Response

Peak doping concentrations from reference


Adjusted implant profile to match C-V response

Ref.: 0.65fF/um at 1V

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Interleaved PN Junction > Phase Response

V-L calculated from phase referenced to 0V

Ref.: 35dB/cm

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Interleaved PN Junction > Circuit Model

Phase and loss from component simulation


Coupling coefficients and passive waveguide properties
can be simulated with MODE Solutions

Example project online:


http://docs.lumerical.com/en/device/integrated_optics_interleaved_junction_microring.html
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Nanobeam Photonic Crystal

Waveguide-integrated 1D PC
Electrical simulation: DEVICE (3D)
Optical simulation: FDTD Solutions (3D)

Reference: Biao Qi et al., "Analysis of Electrooptic Modulator With 1-D Slotted


Photonic Crystal Nanobeam Cavity," IEEE Phot. Tech. Lett., 23, 992 (2011)

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Nanobeam Photonic Crystal > Bandwidth

Electrically, the structure is a semiconductor-


insulator-semiconductor capacitor (SISCAP)
1
Intrinsic bandwidth: f3dB
2 2 Rslab Cslot

Rslab Rslab

Cslot

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Nanobeam Photonic Crystal > Bandwidth

Slab resistance calculated with "test" contact


Cross-section gives conductance per unit length

R = V/I

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Nanobeam Photonic Crystal > Bandwidth

Electric field monitors calculate net charge


Electric field through the surface of the monitor

C = dQ/dV

Device length: 14.8um


f3dB = 120GHz (ref.: 86GHz)
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Nanobeam Photonic Crystal > Electric Field

Electric field in EO polymer modifies the index


Electric field monitor records and exports field profile
as a function of voltage

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Nanobeam Photonic Crystal > Resonance Shift

Make field-dependent EO polymer


1
nV , r 33n3polyE V , r
2
Sweep over bias voltage
High Q analysis: calculate resonance shift
and Q factor of cavity

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Nanobeam Photonic Crystal > VFWHM

Q-factor and resonance frequency gives FWHM


fR
Q c 0.43nm
f f
Determine V required to shift fR by f
Device length is 14.8um

0.8nm/V

VFW HM 0.43nm 0.54V


0.8nm/V
Compare to "V-L": 0.8mV-cm (ref.: 0.28mV-cm)

Example project online:


http://docs.lumerical.com/en/device/integrated_optics_nanobeam_pc_eo_modulator.html
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Electro-Optic Modulators Workshop
SUMMARY

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Summary
Photonic integrated circuit simulation
Optoelectronic component simulation requires a comprehensive
suite of tools
Component-level simulations provide insight into physical system
behaviour
DEVICE calculates the electrical response of semiconductor-based
components: charge, electrostatics
FDTD and MODE Solutions calculate the optical response for systems with
complex, electrically-driven materials
Component characterization can be used to develop portable, re-
useable circuit models in INTERCONNECT
Efficiently simulate large, complex optical circuits
Lumerical's optoelectronic design tools are designed for accurate
and efficient simulation and analysis

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Summary
More Information

A copy of the presentation and project files will be


available on our website
http://www.lumerical.com/support/courses/Lumerical_NUSOD2013.html
Connect with us on LinkedIn
Access insightful information on our products, services and
upcoming webinars

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Summary
Contact our product experts

Dr. James Pond Amy Liu


FDTD Solutions MODE Solutions
jpond.support@lumerical.com aliu.support@lumerical.com
Dylan McGuire Dr. Jackson Klein
DEVICE INTERCONNECT
dmcguire.support@lumerical.com jklein.support@lumerical.com

Sales inquiries: sales@lumerical.com


Sales representatives: www.lumerical.com/company/representatives.html
Free, 30 day trials at www.lumerical.com
Connect with us on LinkedIn

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