EE 221 Solution to Problem Set 2

Problem 1: A step pn junction diode is made in silicon with the n-side having
N D' =21016 cm-3 and on the p-side the net doping is N A' =51015 cm-3.
a) Draw, to scale, the energy band diagram of the junction at equilibrium.
We begin by finding the locations of the Fermi levels on each side of the junction.
On the n side,
n N' 2 1016
EC E f = kT ln 0 = kT ln D = 0.026eV ln = 0.19eV
NC NC 2.89 1019

This assumes complete ionization and nondegeneracy. On the p side, we have

p0 N A' 5 1015
E f EV = kT ln = kT ln = 0.026eV ln 19
= 0.25eV
NV NV 3.1 10
From these we can construct the entire energy band diagram. The built-in
voltage is then 1.12 0.19 0.25eV =0.68eV

0.70eV
0.19eV
0.25eV

0.31eV
1.12eV 0.37eV

b) Find the built-in voltage, and compare to the value measured off your drawing in
part (a).

kT N D' N A' (2 1016 cm 3 ) (5 1015 cm 3
Vbi = ln = 0.026V ln = 0.71V
q ni2
(1.08 10 10
cm )
3 2

which agrees reasonably well with the result above. The difference results from
round-off errors.
c) Find the junction width.
2 Vbi ( N A' + N D' ) 2(11.8)(8.85 1014 F / cm)(0.71V )(2.5 1016 cm 3 )
w= =
We use qN A' N D' (1.6 1019 C )(2 1016 cm 3 )(5 1015 cm 3 )
= 48 106 cm = 0.48 m
d) Find the width of the n-side of the depletion region and the p-side of the depletion
region, and the voltage dropped across each side of the transition region.
2V j 2(11.8)(8.85 1014 F / cm)(0.71V )
wn = =
' N D' 2 1016 cm 3
qN D 1 + ' 1.6 1019 C (2 1016 cm 3 ) 1 + 3
5 10 cm
15
NA
= 9.6 106 cm = 0.096 m

2V j 2(11.8)(8.85 1014 F / cm)(0.71V )

wp = =
N' 5 1015 cm 3
qN A' 1 + A' 1.6 1019 C (5 1015 cm 3 ) 1 + 3
2 10 cm
16
NC
= 38 106 cm = 0.38 m
For the voltages, we have
qN D' 1.6 1019 C 2 1016 cm 3
V jn = ( wn ) 2 = (9.6 106 cm) 2
2 14
2(11.8)(8.85 10 F / cm)
= 0.14V
qN A' 1.6 1019 C 5 1015 cm 3
Vj = ( wp ) =
2 p
(38 106 cm) 2
2 14
2(11.8)(8.85 10 F / cm)
= 0.55V
e) Plot the electric field. What is its maximum value?
N D' qN A'
We know that E ( x) = q ( x xn ) for xn < x < x0 , and that E ( x) =

( xp x)
for x0 x x p . This results in a field distribution as shown below:
3
30x10
max=29000V/cm
Electric Field (V/cm)

25

20

15

10

0
0.0 0.1 0.2 0.3 0.4
Distance fromn x(m)

Wn =0.098m W =0.38m
p

The maximum field occurs at x0, which is 0.098 m from xn. The value of the field
is 2.9104 V/cm.
f) Plot the voltage distribution.
The voltage is found by integrating the field, resulting in
qN'D 1.6 10 19 C 2 1016 cm 3
(x x n) =
2
V(x) V (x n ) = (x x n ) for x n x x 0 .
2
14
2 2(11.8)(8.85 10 F / cm)
We arbitrarily set xn to x=0. As we integrate in x, we start at V(xn)=0. Thus
qND'
V( x) = (x ) + [V (x n = 0) = 0 ]
2

2
When x=0.098m, we switch to
qN 'A
(xp x) + V( xp ) = +
qN 'A
(0.48m x )2 0.71V . The plot becomes
2
V( x) = +
2 2
Voltage (volts)
0.2

0.0
-0.14 -0.2

-0.4

-0.6
-0.71
-0.8

-1.0
-0.2 0 0.2 0.4 0.6 0.8
xn xo xp
Distance (m)

g) Plot the potential energy for electrons (EC).

The potential energy EP=-qV, so we invert the plot from part (f). The units on the
vertical axis become eV instead of V:
1.0
0.8
0.6
0.4
0.2
0.0
-0.2
-0.2 0 0.2 0.4 0.6 0.8
xn xo xp
Distance (m)

Note that this is identical to the shape of the conduction band edge since for
electrons, EC=EP.
h) Draw the energy band diagram for Va=0.5 V.
The new junction voltage is Vj = Vbi Va = 0.71 0.5 = 0.21V

2 (Vbi Va )(N 'A + N 'D ) 2(11.8)(8.85 10 14 F / cm)(0.71 0.5V)(2.5 1015 cm 3 )

w= =
qN 'A N'D (1.6 10 19 C)(2 1016 cm 3 )(5 1015 cm 3 )
= 26 106 cm = 0.26m

qVj =0.71-0.5=0.21eV W=26m

i) Draw the energy band diagram for Va=-5V.

The new junction voltage is Vj = Vbi Va = 0.71 (5) = 5.71V

The new junction width is

2 (Vbi Va )( N A' + N D' ) 2(11.8)(8.85 1014 F / cm)(0.71 (5)V )(2.5 1015 cm 3 )

w= =
qN A' N D' (1.6 1019 C )(2 1016 cm 3 )(5 1015 cm 3 )
= 136 106 cm = 1.36 m
W=136m

qV =5.71eV
j

In the diagrams below, the vertical axis is to scale but the junction widths are not.
 V =V =0.71V
j bi

Equilibrium

V j =V -V =0.71-0.5V
bi a

Forward bias of 0.5 volts

Vj =Vbi -V =0.71-(-5)
a

Reverse Bias

Problem 2: A silicon diode has N D' =1017 on the n side and N A' -=1016 on the p side. It
is forward biased at Va=0.5 V.
a) What is the diffusion current density due to minority carriers at the plane x=xp?
Dn qVkTa
We use Jn (x p ) = q np0 e 1 . We therefore need to find Dn, Ln, and np0, At
Ln

xp, electrons are minority carriers. Thus from Figures 3.11 and 3.23, Dn30cm2/s
and Ln400 m.
From this we can find
 (1.08 1010 cm 3) = 1.17 10 4 cm3 .
2
n2
We find npo using n p0 = i =
p p0 1016 cm 3
cm 2
kT 30
s (1.17 10 4 cm3 ) e 0.026V 1
qVa 0.5V
Dn
Thus J (x ) = q n e 1 = 1.6 10 19 C
n p
Ln p0
0.04cm
= 1.4 10 12 [2.2 108 1]= 3.1 10 4 A / cm 2

b) What is the minority carrier diffusion density at the plane x=xn?

We find p from Figure 3.22 for a doping of 1017, and find p=220 cm2/Vs.
For holes in n-type silicon doped at 1017 cm-3, Dp12 cm2/s and Lp70
m=0.007cm, from Figures 3.11 and 3.23 respectively. The minority carrier
density is

ni2 (1.08 10 cm )
10 3 2
3
= = = 1.17 10 cm
3
pn0 17
nn0 10
cm2
12
3 0.026V
qV a 0.5V
Dp
and J p (xn ) = q L pn0 e
kT
1

19
= 1.6 10 C s (1.17 10 cm ) e
3
1
p 0.007cm
= 7.2 10 5 A / cm 2
c) What is the total current density in the junction neglecting recombination and
generation?
J diff = J n (x p ) + J p (x n ) = 3.1 104 + 7.2 10 5 3.8 10 4 A / cm2

d) What is the maximum recombination current density in the forward-biased

junction? Compare this result to the injection (diffusion current).
The recombination rate is:
2(0.026V
0.5V

qV a
(1.08 10 cm )e
10 3 )

2kT
ni e 17 cm
3
Rmax = = = 8.1 10
2 0 2(10 4 s) s
where 0 is taken as the average lifetime in the more lightly doped side since the
depletion region is predominantly on that side.
An equation for the associated current is not explicitly given in the text, but we
approximate it by adapting Equation 5.78 for the generation current. We will have
J R = + qwRmax ,
 where the plus sign reflects that this current flows from p to n. For simplicity we
have assumed that recombination has its maximum rate in the entire depletion
region. We will need to calculate the junction width w and to do that we first need
Vbi:

kT N D' N A' 10161017 = 0.774V
Vbi = ln = 0.026V ln
q ni2 (1.08 1010 cm 3 )2

2 ( N D' + N A' ) (Vbi Va )

w=
qN D' N A'

( 2 )(11.8 ) 8.85 1014

F 17
(10 + 10 cm ) ( 0.774 0.5 )V
16 3

= cm = 0.20 m
(1.6 10 C )(1016 cm3 )(1017 cm3 )
19

The resulting current is

104 cm
J R = +qWRmax = 1.6 10 19 C 0.20m
m
(8.1 1017 cm 3 / s) = 2.6 10 6 A / cm 2

To compare this to the diffusion current, we take the ratio and find
J diff 3.8 10 4 A / cm 2
= = 146
JR 2.6 10 6 A / cm 2
Thus under forward bias we expect the diffusion current to dominate over the
recombination current.
e) Which is larger, the injection current density into the lightly doped side or the
injection current into the heavily doped side?
From parts (a) and (b), we see that the injection from the heavily doped side into
the lightly doped side is greater.
f) Repeat part (a) for a reverse bias of Va=-5 V.
cm 2
30
s (1.17 10 5 cm 3 )e 0.026V 1
qVa 5V
Dn
Jn (x p ) = q np0 e kT 1 = 1.6 10 19 C
Ln 0.04cm
= 1.4 10 12 [3.03 10 84 1]= 1.4 1012 A / cm2

g) Repeat part (b) for Va=-5V.

 cm2
12
s (1.17 10 3 cm 3 ) e 0.026V 1
qVa 5V
Dp
J p (xn ) = q pn0 e kT
1 = 1.6 10 19 C
Lp 0.007cm
= 3.2 1013 A / cm 2
h) Estimate the generation current density under reverse bias.
We find the junction width at this bias:
2 (N D' + N A' )(Vbi Va )
w=
qNd ' NA '

(2)(11.8)8.85 1014
F 17
cm
(10 + 1016 cm 3)(0.774 (5)V
= = 0.91m
(1.6 10 19 C)(1016 cm 3)(1017 cm 3)
JG =
qni w
=
(1.6 10 19
C )(1.08 1010 cm 3 )(0.91 104 cm)
= 7.4 10
10 2
A / cm
2(10 s)
4
2 0

i) Compare the generation current density to the diffusion current density in the
reverse-biased junction.
JG JG 7.4 10 10 A / cm2
= = 2 430
J diff J n + J p (1.4 10 + 3.2 10 )A / cm
12 13

Problem 4:
a) Calculate the minority excess carrier concentrations at each edge of the transition
region for a silicon diode with N D' =51017 cm-3 and N A =1017 cm-3. The diode is
'

forward-biased with Va=0.5V.

nn0 = N D' = 5 1017 cm 3

ni2 (1.08 10 cm )
10 3 2
3
= = = 2.33 10 cm
2
pn0 3
5 10 cm
17
nn0
p p0 = 1017 cm 3

(1.08 1010 ) = 1.17 103 cm 3

2
n2
n p0 = i =
p p0 1017
qV 3 0.026
0.5

1 = (1.17 10 3 )(2.2 108 )= 2.6 1011 cm 3
a

np (x p ) = n p0 e 1 = 1.17 10 cm e
kT 3

qV a
0.5

pn (x n ) = pno e kT 1 = (2.33 102 ) e 0.026 1 = (2.33 102 )(2.2 10 8 ) = 5.1 1010 cm 3

b) Sketch the diffusion current as a function of distance on the p-side.

We expect the diffusion current to decay exponentially.
 Jndiff

xp
x
c) Since the total current is constant, and since the difference between the total
current and the minority carrier diffusion current is due to drift of majority carriers,
sketch the majority carrier drift current as a function of distance on the p-side.
Jtotal

Jp(drift)

Jndiff

xp
x
Problem 4: Consider an n+p junction under reverse bias of 5 V. Let N A' =51017 cm-3
and the junction area be 75 m2.
a) Find the reverse current due to diffusion.
From Equation 5.77, we have
qVa 5
J = J 0 e kT 1 = J 0 e 0.026 1 J 0

From Equation (5.78),
Dn n p0 Dp pn0
J 0 = q +
Ln Lp

For an n+p junction, pn0 will be negligible, and this reduces to

Dn n p0
J 0 = q
Ln

For a doping on the p- side of 51017,

np0=ni2/pp0=(1.081010)2/51017=2.33102cm-2.
 From Figure 3.11, Dn10 cm2s, and from Figure 3.23, Ln45 m=0.0045 cm,
remembering to use the values for minority carriers.
Thus

Dn n p0
J 0 = q 19 ( )(
10cm2 s 2.33 10 2 cm3 ) = 8.3 10 14
= 1.6 10 C
A / cm2
Ln
0.0045cm

The current is Idiff=J0A=(-8.310-14A/cm2)(7510-8 cm2)=-6.2010-20A.
b)Find the reverse current due to generation.
From Equation (5.92),
1

JG =
( '
)
ni q N D + N A (Vbi Va )
' 2

,or for a n+p junction, in which N D' N A' ,

0 ' '
2N D N A

1

n q (Vbi Va ) 2
JG = i
0 2N A'

From Figure 5.10, Vbi=0.98V for the lightly doped side at 1017. Since most of the
junction is on the lightly doped (p) side, then for 0 we should use the electron
(minority carrier ) lifetime for 0, which from Figure 3.21 is about 23 s.
Thus
1

n q (Vbi Va ) 2
JG = i
0 2N A'

=
(1.08 1010 cm 3 ) (1.6 10 C)(11.8)(8.85 10
19 14
)
F / cm (0.98 (5))
23s 2(5 10 cm )
17 3

= 4.7 10 10 A / cm 2
and IG=J0A=(-4.710-10A/cm2)(7510-8 cm2)=3.510-16A.