2N1711

EPITAXIAL PLANAR NPN

DESCRIPTION
The 2N1711 is a silicon Planar Epitaxial NPN
transistor in Jedec TO-39 metal case. It is
intented for use in high performance amplifier,
oscillator and switching circuits.
The 2N1711 is also used to advantage in
amplifiers where low noise is an important factor.

TO-39

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
V CBO Collector-Base Voltage (I E = 0) 75 V
V CER Collector-Emitter Voltage (R BE 10) 50 V
V EBO Emitter-Base Voltage (I C = 0) 7 V
IC Collector Current 500 mA
P tot Total Dissipation at T amb 25 o C 0.8 W
o
at T C 25 C 3 W
o
at T C 100 C 1.7 W
o
T stg Storage Temperature -65 to 175 C
o
Tj Max. Operating Junction Temperature 175 C

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2N1711

THERMAL DATA
o
R thj-case Thermal Resistance Junction-Case Max 50 C/W
o
R thj-amb Thermal Resistance Junction-Ambient Max 187.5 C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CBO Collector Cut-off V CB = 60 V 10 nA
Current (I E = 0) V CB = 60 V T C = 150 o C 10 A
I EBO Emitter Cut-off Current V EB = 5 V 5 nA
(I C = 0)
V (BR)CBO Collector-Base I C = 100 A 75 V
Breakdown Voltage
(I E = 0)
V (BR)CER Collector-Emitter I C = 10 mA 50 V
Breakdown Voltage
(R BE 10)
V (BR)EBO Emitter-Base I E = 100 A 7 V
Breakdown Voltage
(I C = 0)
V CE(sat) Collector-Emitter I C = 150 mA I B = 15 mA 0.5 1.5 V
Saturation Voltage
V BE(sat) Base-Emitter I C = 150 mA I B = 15 mA 0.95 1.3 V
Saturation Voltage
h FE DC Current Gain I C = 10 A V CE = 10 V 20 60
I C = 0.1 mA V CE = 10 V 35 80
I C = 10 mA V CE = 10 V 75 130
I C = 150 mA V CE = 10 V 100 130 300
I C = 500 mA V CE = 10 V 40 75
I C = 10 mA V CE = 10 V
T C = -55 o C 35 65
h fe Small Signal Current I C = 1 mA V CE = 10 V f = 1 KHz 70 135 300
Gain
fT Transition Frequency I C = 50 mA V CE = 10 V f = 20 MHz 70 100 MHz
C EBO Emitter-Base IC = 0 V EB = 0.5 V f = 1 MHz 50 80 pF
Capacitance
C CBO Collector-Base IE = 0 V CB = 10 V f = 1 MHz 18 25 pF
Capacitance
NF Noise Figure I C = 0.3 mA V CE = 10 V 3.5 8 dB
R g = 510 f = 1 KHz
h ie Input Impedance I C = 1 mA V CE = 5 V f = 1 KHz 4.4 K
h re Reverse Voltage Ratio I C = 1 mA V CE = 5 V f = 1 KHz 7.3 x
10 -4
h oe Output Admittance I C = 1 mA V CE = 5 V f = 1 KHz 23.8 S
Pulsed: Pulse duration = 300 s, duty cycle 1 %

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 2N1711

TO-39 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.

A 12.7 0.500

B 0.49 0.019

D 6.6 0.260

E 8.5 0.334

F 9.4 0.370

G 5.08 0.200

H 1.2 0.047

I 0.9 0.035

L 45o (typ.)

D A
G

I
H
E
F

L
B

P008B

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2N1711

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subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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