EEE F111
BITS Pilani Meenakshi Viswanathan
Physics Department
Hyderabad Campus
Electronics
dv
m eE
dt
dv
m eE v
dt
For steady state v vd
vd eE
eE
vd
dv eE
m v eE
dt vd
I
current density J nevd J E
A
eE I V
vd
m A l
ne 2
1
J E
m
J E l
V I
ne 2 A
V IR
m
ne
J n n p p eE E
n n p p e
In pure semiconductors, number of holes = number of electrons
n p ni
ni int rinsic concentrat ion
ND + p = N A + n
n i2 n i2
For an n-type semiconductor, (i) NA = 0 & n >> p ND n p
n ND
n i2 n i2
For a p-type semiconductor, (i) ND = 0 & p >> n NA p n
p NA
dn
J n eDn
dx
dp
J p eD p
dx
BITS Pilani, Hyderabad Campus
Diffusion
n p e
Einstein Equation
Dn Dp kT
kT T T
VT
Voltage Equivalent of temperature e 11,586 11,600
VT 0.0259 V at T 300 K
dn
J n n ne eDn
dx
dp
J p p p e eD p
dx
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Graded Semiconductors
dp
0 p p e eD p
dx
D p dp
p p dx
dv VT dp
dx p dx
x2 x2
dv VT dp
x dx dx x p dx dx
1 1
v2 p2
dp
v dv p VT p
1 1
p1
v21 v2 v1 VT ln Potential difference between points independent
of distance between them.
p2
p1 p2 e v2 1 / VT
n1 n2 e v2 1 / VT
n1 p1 n2 p2
Intrinsic Semiconduc tor n p ni
np ni2 Mass Action Law
BITS Pilani, Hyderabad Campus
The PN Junction Barrier
Potential / Built in voltage
p1
v21 v2 v1 VT ln
p2
pp NA
v o VT ln VT ln 2
pn (n i N D )
NA ND
VT ln
n i2
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PN Diode Representation of charges
and Conduction Mechanisms
Vv
i Is e T
1
= emission coefficient
= 1 Germanium
= 2 Silicon
Vv In this equation,
i Is e T
1 v = independent variable and i = dependent
variable
Diode ID(mA)
Behavior
Is(Si)=10 nA Is(Ge)=10 A
0.3V 0.7V
VD(V)
(Ge)
(Si) Is=reverse saturation current
IS Tb 2Tb Ta /10 IS Ta
dv
-2.5 mV/ C
o
dT
BITS Pilani, Hyderabad Campus
Diode Circuits
v1
Vv
i Is e T
1
By KVL, v1 v Ri
Vv
i Is e T
1
1 v1
i- v
R R
Assume vD 0.6V
vs v D
i 2.4mA
R
i
vD VT ln
1
0.6416V
IS
Use vD 0.6416V
vs v D
i 2.358mA
R
BITS Pilani, Hyderabad Campus
Performing one more Iteration
i
vD VT ln
I 1
0.6406V
S
Use vD 0.6406 V
vs v D
i 2.359 mA
R
I Q 2.36mA
VQ 0.641V
Forward
bias, i > 0A
reverse
bias, v 0V
Step 1: Assume forward bias, and replace the ideal diode with a short circuit.
Step 2: Evaluate the diode current iD, using any linear circuit-analysis technique
Step 3: If iD 0, the diode is actually forward-biased, the analysis is valid, and step 4 is to
be omitted
Step 4: If iD < 0, the analysis so far is invalid. Replace the diode with an open circuit, forcing
iD = 0, and solve for the desired circuit quantities using any method of circuit analysis.
Voltage vD should have a negative value.
vs 3
i1
1000
3
i2 1.5mA
2000
vs 3 3 vs
i i1 i2 3 10 1.5 10 4.5 10 3
1000 1000
D is on when i 0
vs 4.5V
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Clipper Circuit
2
v o vs for vs 4.5V
3
v o 3V for vs 4.5V
50 mA
6V
vs=24 V
24 6
is 60mA
300
vL 6
iL
RL RL
6
i i L is 60 10 3
RL
36
50 10 60 10 3 5 10 3
RL
RL 600, RL 109
vL 6
iL 6mA
RL RL
vs 6
is
300
3 vs 6
i iL is 6 10
300
3 3 vs 6
50 10 6 10 5 10 3
300
vs 22.8V , vs 9.3V