Benefits E
Parallel Operation for Higher Current Applications C
G
Lower Conduction Losses and Switching Losses
Higher Switching Frequency up to 150kHz TO-220AB
Thermal Resistance
Parameter Min. Typ. Max. Units
RJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) 0.58 C/W
RJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) 5.0
RCS Thermal Resistance, Case-to-Sink (flat, greased surface) 0.50
RJA Thermal Resistance, Junction-to-Ambient (typical socket mount) 80
Weight 2 (0.07) g (oz)
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12/10/03
IRGB20B60PD1
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 V VGE = 0V, IC = 500A
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage 0.32 V/C VGE = 0V, IC = 1mA (25C-125C)
RG Internal Gate Resistance 4.3 1MHz, Open Collector
2.05 2.35 IC = 13A, VGE = 15V 4, 5,6,8,9
VCE(on) Collector-to-Emitter Saturation Voltage 2.50 2.80 V IC = 20A, VGE = 15V
2.65 3.00 IC = 13A, VGE = 15V, TJ = 125C
3.30 3.70 IC = 20A, VGE = 15V, TJ = 125C
VGE(th) Gate Threshold Voltage 3.0 4.0 5.0 V IC = 250A 7,8,9
VGE(th)/TJ Threshold Voltage temp. coefficient -11 mV/C VCE = VGE, IC = 1.0mA
gfe Forward Transconductance 19 S VCE = 50V, IC = 40A, PW = 80s
ICES Collector-to-Emitter Leakage Current 1.0 250 A VGE = 0V, VCE = 600V
0.1 mA VGE = 0V, VCE = 600V, TJ = 125C
VFM Diode Forward Voltage Drop 1.5 1.8 V IF = 4.0A, VGE = 0V 10
Eoff Turn-Off Switching Loss 100 145 J VGE = +15V, RG = 10, L = 200H
Etotal Total Switching Loss 195 285 TJ = 25C f
td(on) Turn-On delay time 20 26 IC = 13A, VCC = 390V CT3
tr Rise time 5.0 7.0 ns VGE = +15V, RG = 10, L = 200H
td(off) Turn-Off delay time 115 135 TJ = 25C f
tf Fall time 6.0 8.0
Eon Turn-On Switching Loss 165 215 IC = 13A, VCC = 390V CT3
Eoff Turn-Off Switching Loss 150 195 J VGE = +15V, RG = 10, L = 200H 11,13
tf Fall time 13 17
Cies Input Capacitance 1560 VGE = 0V 16
RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V CT2
Rg = 22, VGE = +15V to 0V
trr Diode Reverse Recovery Time 28 42 ns TJ = 25C IF = 4.0A, VR = 200V, 19
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IRGB20B60PD1
45 250
40
35 200
30
150
Ptot (W)
25
IC (A)
20
100
15
10 50
5
0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
T C (C) T C (C)
Fig. 1 - Maximum DC Collector Current vs. Fig. 2 - Power Dissipation vs. Case
Case Temperature Temperature
100 40
VGE = 15V
35
VGE = 12V
30 VGE = 10V
VGE = 8.0V
10
25 VGE = 6.0V
ICE (A)
IC A)
20
15
1
10
0 0
10 100 1000 0 1 2 3 4 5 6
20 20
15 15
10 10
5 5
0 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6
VCE (V) VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25C; tp = 80s TJ = 125C; tp = 80s
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IRGB20B60PD1
450 10
400 9
350 8
ICE = 20A
T J = 25C 7
300 ICE = 13A
TJ = 125C
6 ICE = 8.0A
VCE (V)
250
ICE (A)
5
200
4
150
3
100 2
50 1
0 0
0 5 10 15 20 0 5 10 15 20
VGE (V) VGE (V)
Fig. 7 - Typ. Transfer Characteristics Fig. 8 - Typical VCE vs. VGE
VCE = 50V; tp = 10s TJ = 25C
10 100
8 ICE = 20A
7 ICE = 13A
TJ = 150C
ICE = 8.0A 10
6 TJ = 125C
VCE (V)
T = 25C
5 J
3 1
0
0.1
0 5 10 15 20 0.0 1.0 2.0 3.0 4.0 5.0 6.0
Forward Voltage Drop - V FM(V)
VGE (V)
Fig. 9 - Typical VCE vs. VGE Fig. 10 - Typ. Diode Forward Characteristics
TJ = 125C tp = 80s
350 1000
300
EON tdOFF
250
Swiching Time (ns)
100
Energy (J)
200
EOFF tdON
150
tF
10
100
tR
50
0 1
0 5 10 15 20 25 0 5 10 15 20 25
IC (A) IC (A)
Fig. 11 - Typ. Energy Loss vs. IC Fig. 12 - Typ. Switching Time vs. IC
TJ = 125C; L = 200H; VCE = 390V, RG = 10; VGE = 15V. TJ = 125C; L = 200H; VCE = 390V, RG = 10; VGE = 15V.
Diode clamp used: 8ETH06 (See C.T.3) Diode clamp used: 8ETH06 (See C.T.3)
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IRGB20B60PD1
250 1000
td OFF
EON
200
EOFF tdON
150
10 tF
100
tR
50 1
0 5 10 15 20 25 30 35 0 10 20 30 40
RG ( ) RG ( )
Fig. 13 - Typ. Energy Loss vs. RG Fig. 14 - Typ. Switching Time vs. RG
TJ = 125C; L = 200H; VCE = 390V, ICE = 13A; VGE = 15V TJ = 125C; L = 200H; VCE = 390V, ICE = 13A; VGE = 15V
Diode clamp used: 8ETH06 (See C.T.3) Diode clamp used: 8ETH06 (See C.T.3)
12 10000
10
Cies
8
Capacitance (pF)
1000
Eoes (J)
Coes
4 100
2
Cres
0 10
0 100 200 300 400 500 600 700 0 20 40 60 80 100
VCE (V)
VCE (V)
Fig. 15- Typ. Output Capacitance Fig. 16- Typ. Capacitance vs. VCE
Stored Energy vs. VCE VGE= 0V; f = 1MHz
16 1.6
1.5
14
400V 1.4
12
Normalized V CE(on) (V)
1.3
10 1.2
VGE (V)
8 1.1
1
6
0.9
4
0.8
2 0.7
0 0.6
0 10 20 30 40 50 60 70 80 -50 0 50 100 150 200
50 14
VR = 200V
TJ = 125C
TJ = 25C
I F = 8.0A 12
45
I F = 4.0A
I F = 8.0A
10
40 I F = 4.0A
trr- (nC)
Irr- ( A)
35
30
4
25
VR = 200V 2
TJ = 125C
TJ = 25C
20 0
100 1000 100 1000
di f /dt - (A/s) di f /dt - (A/s)
Fig. 19 - Typical Reverse Recovery vs. dif/dt Fig. 20 - Typical Recovery Current vs. dif/dt
200 1000
VR = 200V VR = 200V
TJ = 125C TJ = 125C
TJ = 25C TJ = 25C
160
I F = 8.0A I F = 8.0A
di (rec) M/dt- (A /s)
I F = 4.0A
I F = 4.0A
120
Qrr- (nC)
80
40
A
0 100
100 1000 100 1000
di f /dt - (A/s) di f /dt - (A/s)
Fig. 21 - Typical Stored Charge vs. dif/dt Fig. 22 - Typical di(rec)M/dt vs. dif/dt,
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IRGB20B60PD1
D = 0.50
Thermal Response ( Z thJC )
0.20
0.1
0.10 R1
R1
R2
R2
R3
R3
R4
R4 Ri (C/W) i (sec)
J C 0.0076 0.000001
0.05 J
1 2 3 4 0.2696 0.000270
1 2 3 4
0.02 0.1568 0.001386
0.01 0.01 Ci= i/Ri
Ci i/Ri 0.1462 0.015586
Notes:
SINGLE PULSE 1. Duty Factor D = t1/t2
( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
10
D = 0.50
Thermal Response ( Z thJC )
1 0.20
0.10
0.05
R1 R2
0.1 0.02 R1 R2 Ri (C/W) i (sec)
0.01 J C
J 1.779 0.000226
1 2
1 2 3.223 0.001883
SINGLE PULSE Ci= i/Ri
( THERMAL RESPONSE ) Ci i/Ri
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
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IRGB20B60PD1
L
VCC
DUT 80 V DUT
0 480V
1K Rg
VCC
L R=
PFC diode ICM
DUT /
VCC DUT
DRIVER VCC
Rg Rg
VR = 200V
0.01
L = 70H
D.U.T.
D
dif/dt
ADJUST IRFP250
G
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IRGB20B60PD1
450 18 450 45
400 16 400 40
TEST CURRENT
350 tf 14 350 35
300 12 300 30
90% ICE tr
250 10 250 25
VCE (V)
VCE (V)
I CE (A)
ICE (A)
90% test current
200 8 200 20
5% V CE
10% test current
150 6 150 15
100 4 100 10
5% ICE
50 2 50 5% V CE 5
0 0 0 0
Eon Loss
Eoff Loss
-50 -2 -50 -5
-0.20 0.00 0.20 0.40 0.60 0.80 7.75 7.85 7.95 8.05 8.15
Time(s) Time (s)
Fig. WF1 - Typ. Turn-off Loss Waveform Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 125C using Fig. CT.3 @ TJ = 125C using Fig. CT.3
3
trr
IF
ta tb
0
4
Q rr
2
I RRM 0.5 I RRM
di(rec)M/dt 5
0.75 I RRM
1 di f /dt
1. dif/dt - Rate of change of current 4. Qrr - Area under curve defined by trr
through zero crossing and IRRM
trr X IRRM
2. I RRM - Peak reverse recovery current Qrr =
2
3. trr - Reverse recovery time measured
from zero crossing point of negative 5. di(rec)M /dt - Peak rate of change of
going I F to point where a line passing current during tb portion of trr
through 0.75 I RRM and 0.50 IRRM
extrapolated to zero current
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IRGB20B60PD1
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 12/03
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