1346B
IRLZ44N
HEXFET Power MOSFET
l Logic-Level Gate Drive
l Advanced Process Technology D
l Dynamic dv/dt Rating VDSS = 55V
l 175C Operating Temperature
l Fast Switching RDS(on) = 0.022
G
l Fully Avalanche Rated
ID = 47A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
Thermal Resistance
Parameter Min. Typ. Max. Units
RJC Junction-to-Case 1.4
RCS Case-to-Sink, Flat, Greased Surface 0.50 C/W
RJA Junction-to-Ambient 62
8/25/97
IRLZ44N
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ.
Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55
V VGS = 0V, I D = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.070
V/C Reference to 25C, I D = 1mA
0.022 VGS = 10V, ID = 25A
RDS(on) Static Drain-to-Source On-Resistance
0.025 VGS = 5.0V, I D = 25A
0.035 VGS = 4.0V, I D = 21A
VGS(th) Gate Threshold Voltage 1.0
2.0 V VDS = VGS , ID = 250A
gfs Forward Transconductance 21
S VDS = 25V, I D = 25A
25 VDS = 55V, VGS = 0V
IDSS Drain-to-Source Leakage Current A
250 VDS = 44V, VGS = 0V, TJ = 150C
Gate-to-Source Forward Leakage
100 V GS = 16V
IGSS nA
Gate-to-Source Reverse Leakage
-100 VGS = -16V
Qg Total Gate Charge 48 ID = 25A
Qgs Gate-to-Source Charge
8.6 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge 25 V GS = 5.0V, See Fig. 6 and 13
td(on) Turn-On Delay Time 11 VDD = 28V
tr Rise Time 84 I D = 25A
ns
td(off) Turn-Off Delay Time 26 RG = 3.4, VGS = 5.0V
tf Fall Time 15 RD = 1.1, See Fig. 10
Between lead, D
LD Internal Drain Inductance 4.5
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance 7.5
and center of die contact S
Notes:
Repetitive rating; pulse width limited by I SD 25A, di/dt 270A/s, VDD V(BR)DSS ,
max. junction temperature. ( See fig. 11 ) TJ 175C
VDD = 25V, starting TJ = 25C, L = 470H Pulse width 300s; duty cycle 2%.
RG = 25, IAS = 25A. (See Figure 12)
IRLZ44N
1000 1000
VGS VGS
TOP 15V TOP 15V
12V 12V
10V 10V
8.0V 8.0V
ID , D ra in -to -S o u rce C u rre n t (A )
10 10
2 .5V
2.5 V
2 0 s PU L SE W ID TH 20 s PU LSE W ID TH
T J = 2 5C T J = 1 75C
1 A 1 A
0.1 1 10 100 0.1 1 10 100
V D S , Drain-to-S ource Voltage (V ) V D S , Drain-to-Source V oltage (V )
1000 3.0
I D = 4 1A
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce
I D , D r ain- to-S ourc e C urre nt (A )
2.5
T J = 2 5 C
100 2.0
(N o rm a li ze d )
TJ = 1 7 5 C
1.5
10 1.0
0.5
V DS = 2 5 V
2 0 s P U L S E W ID T H V G S = 10 V
1 0.0 A
A
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
2800 15
V GS = 0V, f = 1 MH z I D = 25A
C iss = C gs + C gd , C ds SH O R TED V D S = 44 V
2000
9
1600
C o ss
1200
6
800
C rss 3
400
FO R TEST CIR CU IT
SEE FIG UR E 13
0 A 0 A
1 10 100 0 10 20 30 40 50 60 70
V D S , Drain-to-Source V oltage (V) Q G , T otal Gate C harge (nC )
1000 1000
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R D S(o n)
I S D , R e v e rse D ra in C u rre n t (A )
I D , D ra in C u rre n t (A )
100 10s
100
100 s
TJ = 17 5C
10
1m s
T J = 25 C
T C = 25 C 10m s
T J = 17 5C
VG S = 0 V S ing le Pulse
10 A 1 A
0.4 0.8 1.2 1.6 2.0 2.4 1 10 100
V S D , S ource-to-Drain Voltage (V ) V D S , Drain-to-Source Voltage (V)
50 RD
VDS
VGS
40 D.U.T.
RG
I D , Drain Current (A)
+
- VDD
30
5.0V
Pulse Width 1 s
Duty Factor 0.1 %
20
10%
VGS
Fig 9. Maximum Drain Current Vs.
td(on) tr t d(off) tf
Case Temperature
10
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.10
P DM
0.1 0.05
t1
0.02 SINGLE PULSE
0.01 (THERMAL RESPONSE) t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
500
L ID
E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
VDS TO P 10 A
1 7A
D.U.T.
400 B OTTO M 25 A
RG +
V
- DD
300
5.0 V IAS
tp
0.01
200
Fig 12a. Unclamped Inductive Test Circuit
100
V(BR)DSS VD D = 2 5V
0 A
25 50 75 100 125 150 175
tp
Starting T J , Junction Temperature (C)
VDD
IAS
50K
12V .2F
QG .3F
5.0 V +
V
QGS QGD D.U.T. - DS
VGS
VG
3mA
IG ID
Charge Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
IRLZ44N
+
- +
-
RG dv/dt controlled by RG +
Driver same type as D.U.T. VDD
-
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VGS=10V *
Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent
Ripple 5% ISD
0 . 9 3 ( .0 3 7 ) 0 . 5 5 (. 0 2 2 )
3 X 0 . 6 9 ( .0 2 7 ) 3X
1 .4 0 (. 0 5 5 ) 0 . 4 6 (. 0 1 8 )
3X
1 .1 5 (. 0 4 5 ) 0 .3 6 (. 0 1 4 ) M B A M 2 .9 2 (. 1 1 5 )
2 .6 4 (. 1 0 4 )
2 . 5 4 ( .1 0 0 )
2X
NO TE S :
1 D I M E N S IO N I N G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 3 O U T L IN E C O N F O R M S T O J E D E C O U T L I N E T O -2 2 0 -A B .
2 C O N T R O L L I N G D IM E N S IO N : I N C H 4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 8/97
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/