2017 6 Vol.32 No.

12
32 12 TRANSACTIONS OF CHINA ELECTROTECHNICAL SOCIETY Jun. 2017

SiC MOSFET SiC SBD

100084

SiSiC


SiC MOSFET SiC SBD
SiC MOSFET
SiC MOSFET
SiC
TM464

Analytical Transient Model of Commutation Units with

SiC MOSFET and SiC SBD Pair
Zhu Yicheng Zhao Zhengming Wang Xudong Shi Bochen
State Key Lab of Control and Simulation of Power System and Generation Equipment
Department of Electrical Engineering Tsinghua University Beijing 100084 China

Abstract Compared with Si devices, the higher switching speed capability and lower on-state
resistance of Silicon Carbide (SiC) devices increase the non-ideality and sensitivity to parasitic
parameters of their switching transients. Thus, more accurate analytical transient modeling is required.
In this paper, switching transients of power switching devices are simplified by time slicing,
mechanism decoupling and nonlinear parameter decoupling, in order to highlight switching
characteristics of switching transients while simplifying the analysis of their physical mechanisms. An
analytical transient model of a commutation unit with SiC MOSFET and SiC SBD pair is proposed.
Analytical calculation and experiment waveforms are compared. The results show that the proposed
model is able to provide a relatively accurate prediction of switching transient waveforms and
switching losses of SiC MOSFET. All the parameters in the proposed model can be extracted from
datasheets, which enhances its feasibility.
KeywordsSiC power devices, transient model, switching characteristics, switching losses

3.3 Si SiC
0
Silicon, SiSilicon
Carbide, SiCSi 3
Si 7 [3-5] SiC
Si 2 [1,2] Si SiC

5149068051490683
2017-04-09 2017-05-18
 32 12 SiC MOSFET SiC SBD 59

SiC

SiC SiC MOSFET SiC SBD
SiC
SiC Si datasheet
Si
SiC Si McNutt [7,8]
SiC
Discrete State Event Driven, DSED


[6]
[9] Si MOSFET
SBD
MOSFET
vds
Cgd
datasheet
[10] SiC
MOSFET SiC SBD
vds Cgd

1 SiC MOSFET SiC SBD

1

SiC MOSFET Q SiC SBD VD
L load Csource SiC MOSFET SiC SBD
Rg(ext)
SiC MOSFET

1.1

2 V DC
I L CL
Vdrive
1 VCC VEE
Fig.1 Basic commutation unit circuit Vctr SiC MOSFET
MOSFET Q SiC MOSFET
Cgs
Cgd Cds SiC MOSFET
L d(int) L s(int)


 60 2017 6

19 9
Rg(int) did (t )
Vdrive = vgs (t ) + Rg ig (t ) + Ls 1
SiC SBD dt
SBD VDf SiC SBD
CjD SiC SBD V
Vdrive = CC
L sD VEE
Rg(ext) L d(ext) dvgs (t ) dvgd (t )
Rd SiC MOSFET ig (t ) = Cgs + Cgd 2
dt dt
L s(ext) SiC
MOSFET vgs (t ) = vgd (t ) + vds (t ) 3

did (t )
VDC = vds (t ) + ( Ls + Ld ) + Rd id (t )
dt
diDiode (t )
LsD + v jD (t ) 4
dt
vjD (t)
v jD (t ) = 0 SBD

dv jD (t ) 5
iDiode (t ) = C jD SBD
dt
iDiode = I L id (t ) 6

id (t ) = ich (t ) + ic (t ) 7
ich(t)
g fs vgs (t ) Vth MOSFET

vgs (t )Vth vds (t )vgs (t ) Vth

0 MOSFET

ich (t ) = vgs (t ) Vth
2
Fig.2 Equivalent model of the double pulse testing circuit
vds (t ) MOSFET
Rds(on)
CgdCds CjD
vgs (t )Vth vds (t ) vgs (t ) Vth
vds Cgd
8
[11]
dvgd (t ) dvds (t )
0 ic (t ) = Cgd + Cds 9
dt dt
1
2 gfs A/V Vth
Cgd0 Cgd1 Cgd2 Cds0 Cds1 Cds2 CjD0 CjD1 Rds(on)
CjD2 2 19
SiC MOSFET
CL SiC SBD Cj vds(t) id(t)

Rg=Rg(int) +Rg(ext) L d=L d(int) +L d(ext) L s=Ls(int) +L s(ext)
L stray=L s+L d+L sD SBD SiC MOSFET
Cf =CjD +CL MOSFET Ciss=Cgd+Cgs
Coss=Cgd+Cds 1.2 SiC MOSFET
2 SiC MOSFET 3
 32 12 SiC MOSFET SiC SBD 61

2[t1, t2]Ciss vgs Vth

1 t1 MOSFET
1[t0, t1] Ciss Ls Ls
t0 Vctr L s
t1 VEE vgs
VCCvgs t t1
vgs (t ) = VCC + (VEE VCC ) exp 10
tddrive(on) Rg Ciss

Ciss = Cgd2 + Cgs
MOSFET vds id
t2 vgs VthMOSFET

3[t2, t3]id I L
t2 MOSFET id 0
|dvds/dt| id=ich id
t2
d 2 id (t ) did (t ) 2 2
2
+ 2 (on3) + 0(on3) id (t ) = 0(on3) I q(on3)
dt dt
11
id (t2+ ) = id (t2 ) =0 12

did (t ) di (t )
= d =0 13
dt t =t2+ dt t =t2

Rg (Cgs + Cgd2 + g fs Rd Cgd2 ) + g fs Ls
3 SiC MOSFET
(on3) =
2 g fs Rg Lstray Cgd2
Fig.3 Turn-on transient waveforms of SiC MOSFET 1
1 SiC MOSFET
0(on3) =
g fs Rg Lstray Cgd2
Tab.1 Assumptions of turn-on transient of SiC MOSFET
I q(on3) =gfs (VCC Vth )


MOSFET SBD L stray
v gs (t)=V EE 1 (on3) 0(on3) id

v ds (t)=V DC
t ddrive(on)
i d (t)=0
id (t ) = I q(on3) + A(on3) exp (on3) (t t2 )
v ds (t)=V DC

i d (t)=0
sin (on3) (t t2 ) + (on3) 14
i d (t)=i ch (t)

[t 3 , t p ]: dv ds (t)/dt=0 2 2

[t p , t 4 ]: |dv gs (t)/dt|
|dv ds (t)/dt|
(on3) = 0(on3) (on3)

v gs (t)=V miller
I q(on3)
A(on3) =

sin (on3)
(on3)
SiC (on3) = arctan
(on3)

Si 2 (on3) 0(on3) id

 62 2017 6

id (t ) = I q(on3) + A1(on3) exp p1(on3) (t t2 ) + 1 did (t ) dt t =t

0(on41) = A(on41) = 3

A2(on3) exp p2(on3) (t t2 ) 15 Lstray Cf (on41)

Cf = C jD0 + CL
2 2
(on3) = (on3) 0(on3)
tp did/dt =0 id tp
p1(on3) = (on3) (on3) I peak
p2(on3) = (on3) + (on3)
tp = t3 +
(
arctan (on41) (on41) ) 19
p2(on3) (on41)
A1(on3) = I q(on3)
p2(on3) p1(on3) I peak = id (tp ) I L + A(on41) 20
p1(on3)
A2(on3) = I q(on3)
p2(on3) p1(on3) 2[tp, t4]vds id I peak
vgs Vmiller |dvgs/dt|
vgs id
|dv d s /dt| i d
g fs
id (t ) id (t ) = I q(on42) + exp (on42) (t tp )
vgs (t )= + Vth 16
g fs
{A (on42) cos (on42) (t tp ) + B(on42) sin (on42) (t tp ) }
vds
21
did (t )
vds (t ) = VDC ( Ls + Ld + LsD )
Rd id (t ) 17
dt
Rd + ( gfs Ls ) (Coss + g fs Rg Cgd1 )
4[t3, t4]id vds VmillerVth (on42) =
2 Lstray
t3 MOSFET id IL SBD
iDiode 0SBD Vmiller 1 Cf + 1 (Coss + g fs Rg Cgd1 )
0(on42) =
SiC SBD Lstray
id [12]
I L (Coss + g fs Rg Cgd1 ) + g fs (VCC Vth )Cf
L stray|did /dt| SBD Cf I q(on42) =
vds t3 Cf + Coss + g fs Rg Cgd1

id I L Ipeak |did/dt|
2 2
0 L stray|did /dt| (on42) = 0(on42) (on42) A(on42) = Ipeak I q(on42)
0 SBD Cf
(on42) ( I peak I q(on42) )
vds t3 id B(on42) =
(on42)
tp
vds tp Cf = C jD1 + CL Coss = Cds1 + Cgd1
[t3, tp] dvds/dt
[tp, t4]
dvds (t ) Vmiller VCC
1[t3, tp]id I L I peak = 22
dt Rg Cgd
vgs id Vmiller
tp vgs Cgd PN
16id Cgdj
Cgdj0
id (t ) = I L + A(on41) exp (on41) (t t3 ) sin (on41) (t t3 ) Cgd Cgdj = 23
(1 + vdg (t ) Vdgj0 )
gdj
18
Vdgj0 gdj
2 2 Rd vdgvds2322
(on41) = 0(on41) (on41) (on41) =
2 Lstray vds
 32 12 SiC MOSFET SiC SBD 63

vds (t ) = 1.3 SiC MOSFET

1 SiC MOSFET 4
(1 gdj )(Vmiller VCC )(t tp ) vds (tp ) 1 gdj 1 gdj
Vdgj0 +1+ 1
Vdgj0
Vdgj0 RgCgdj0
2

24
vds Coss ic
vgs

id (t ) Coss ( dvds (t ) dt )
vgs (t ) = + Vth 25
g fs

5[t4, t5]id vds Rds(on) I L

t4 vds Vmiller VthMOSFET
SBD Cf
L stray Rd id

{
id (t ) = I L + exp (on5) (t t4 ) A(on5) cos (on5) (t t4 ) +

B(on5) sin (on5) (t t4 ) } 26

4 SiC MOSFET
Fig.4 Turn-off transient waveforms of SiC MOSFET
2 SiC MOSFET
Rd + Rds(on) 1
(on5) = 0(on5) = Tab.2 Assumptions of turn-off transient of SiC MOSFET
2 Lstray Lstray Cf


A(on5) = id (t4 ) I L Cf = C jD2 + CL MOSFET SBD

v gs (t)=V CC
did (t ) dt t =t + (on5) A(on5)

v ds (t)=R ds(on) I L
B(on5) = 4
t ddrive(off)
(on5) i d (t)=I L

v ds (t)=R ds(on) I L
vgs Vmiller
i d (t)=I L
vds i Diode (t)=0

(V VCC )(t t4 ) v gs (t)=V miller
vds (t ) = Vmiller Vth + miller 27
Rg Cgd0 dv jD (t)/dt= dv ds (t)/dt

|dv gs (t)/dt|
|dv ds (t)/dt|
6[t5, t6]id

t5 id
26 vds=Rds(on) I L 1[t0, t1]
vgs VCC [t0, t1]t0
Vctr t1
VCC V EE
t t5
vgs (t ) = VCC + (Vmiller VCC ) exp 28 vgs
Rg Ciss

tddrive(off)
Ciss = Cgd0 + Cgs
t6 id 5% I L 2[t1, t2]Ciss vgs Vmiller
[t5, t6]t1
 64 2017 6

MOSFET Ciss Ls
did (t ) di (t )
vgs = d = ki(offt 4 ) 35
dt t =t4+ dt t =t4
t t1
vgs (t ) = VEE + (VCC VEE ) exp 29
Rg Ciss
Rd + ( gfs Ls ) (Coss + g fs Rg Cgd2 )
(off5) =
Ciss = Cgd0 + Cgs MOSFET 2 Lstray
vds id t2 vgs Vmiller 1
0(off5) =
3[t2, t3]vds VmillerVth Lstray (Coss + gfs Rg Cgd2 )
[t4, t5]t2
vds 0 vgs Vmiller Coss = Cds2 + Cgd2
vds
I q(off5) =g fs (VEE Vth )
(V VEE )(t t2 )
vds (t ) = Rds(on) I L + miller 30 1 (off5) 0(off5) id
Rg Cgd0

SBD vds vjD
SBD iDiode id (t ) = I q(off5) + exp (off5) (t t4 )
id I L
4[t3, t4]id vds VDC
{A (off5) cos (off5) (t t4 ) + B(off5) sin (off5) (t t4 ) }
[tp, t4]t3 36
MOSFET vds vds
[tp, t4]24 2 2
(off5) = 0(off5) (off5) A(off5) = I d(offt 4 ) I q(off5)
t4 vds

vds (t3+ ) = vds (t3 ) = Vmiller Vth 31 ki(offt 4 ) + (off5) ( I d(offt 4 ) I q(off5) )
B(off5) =
(off5)
vjD SBD
iDiode id dvjD /dt= 2 (off5) 0(off5) id
dvds/dt id
dvds (t ) id (t ) = I q(off5) + A1(off5) exp p1(off5) (t t4 ) +
id (t ) = I L Cf 32
dt
Cf = C jD1 + CL vgs A2(off5) exp p2(off5) (t t4 ) 37

25
2 2
5[t4, t5]id vds (off5) = (off5) 0(off5) p1(off5) = (off5) (off5)
t4 vds VDC SBD
p2(off5) = (off5) + (off5)
id L stray
vds Vpeak
[t2, t3] A1(off5) =
( )
p2(off5) I d(offt 4 ) I q(off5) ki(offt 4 )
p2(off5) p1(off5)
|dvds(t)/dt| ich
|dvgs/dt||dvds/dt| id
A2(off5) =
(
ki(offt 4 ) p1(off5) I d(offt 4 ) I q(off5) )
t4 id p2(off5) p1(off5)
d2 id (t ) did (t ) 2 2 vgs 16vds
2
+ 2 (off5) + 0(off5) id (t ) = 0(off5) I q(off5)
dt dt
17
33
6[t5, t6]id vds
id (t4+ ) = id (t4 ) = I d(offt 4 ) 34 t5 vgs VthMOSFET
 32 12 SiC MOSFET SiC SBD 65

Rd vds id vgs

ich = kfs (vgs Vth0 ) 2 41

vds (t ) = VDC + exp (off6) (t t5 )
kfs A/V 2Vth0
{A (off6) }
cos (off6) (t t5 ) + B(off6) sin (off6) (t t5 ) 5 CMF20120D datasheet MOSFET

38
41 kfs Vth0

Rd 1
(off6) = 0(off6) =
2 Lstray Lstray Coss
2
(off6) = 0(off6) 2
(off6) A(off6) = vds (t5 ) VDC

dvds (t )
+ (off6) A(off6)
dt t =t5
B(off6) =
(off6)
dvds (t )
id (t ) = Coss 39
dt
5 CMF20120D
vgs VEE
Fig.5 Transfer characteristics of CMF20120D
t t5
vgs (t ) = VEE + (Vth VEE ) exp 40 MOSFET ich=I L /2
Rg Ciss
25
5

Coss = Cds2 + Cgd2 Ciss = Cgd2 + Cgs
ich = g fs (vgs Vth ) 42
t6 vds 5%VDC
gfs = 2kfs I L

2 1
Vth = 2 I L kfs + Vth0
4

2.1.2
MOSFET
Cgd vgs


Wolfspeed SiC MOSFET IL
Vmiller = vgs = + Vth 43
CMF20120D SiC SBDC4D30120D ich = I L gfs
[13,14] SiC MOSFET SiC SBD
2.1.3

Datasheet MOSFET Ciss

2.1 SiC MOSFET
Coss Crss vgs=0 vds
SiC MOSFET
6a
Vth gfs Vmiller
Cgs Cgd Cds Ciss = Cgs + Cgd 44
Rg(int) L s(int) L d(int) Coss = Cds + Cgd 45
2.1.1
MOSFET ich Crss = Cgd 46
 66 2017 6

Cds1 = Cds vds =VDC 2

50

Cds2 = Cds vds =VDC

51

1
Cgd0 = Coxd + Cgdj v =V 52
2 dg lim

Cgd1 = Cgdj 53
vdg =VDC 2

Cgd2 = Cgdj 54
vdg =VDC

a
Cds0Cds1Cds2Cgd0Cgd1Cgd2
Rg(int) datasheet
datasheet

L s(int) L d(int)
2.2 SiC SBD
SiC SBD CjD
L sD
SiC SBD CjD PN

b
C jD0
6 CMF20120D C jD = jD
55
Fig.6 Typical capacitances curves of CMF20120D (1 + vr Vr0 )

SiC MOSFET Cgs 5 datasheet

SBD
Cds PN CjD
vds Cds vds C jD1 = C jD 56
vr =VDC 2
[15,16]
Cds0 C jD2 = C jD 57
Cds = ds
47 vr =VDC
(1 + vds Vds0 )
CjD0CjD1CjD2 L sD
Cgd Coxd PN
SiC MOSFET
Cgdj Crss
Cgd vds 3
vds 6b

Vlim Cgd
SiC MOSFET SiC SBD
6b C rss 4849

datasheet
3.1
Coxd Cgdj Coxd vdg Vlim 7
Cgd = 48
Coxd + Cgdj Cgdj vdg Vlim 2
SiC MOSFET SiC SBD
Cgdj0
Cgdj = gdj
49 2 datasheet
(1 + vdg Vdgj0 )
25
7 3
Cds Cgd
 32 12 SiC MOSFET SiC SBD 67

3.2
Rg(ext)

8 9

a b

7
Fig.7 Double pulse tester
3
Tab.3 Parameters of measurement setup

V DC /V 500
L s(ext) /nH 6
R d / 0.5

I L /A 18.3
L d(ext) /nH 150
C L /pF 26
V EE /V 5

V CC /V 20
k fs /(A/V 2 ) 0.65
g fs /S 4.9
V miller /V 9.66
C gs /nF 2
C ds0 /nF 1.4
C gdj0 /pF 157
ds 0.556 a b
C ds1 /pF 139
8 R g(ext)
V lim/V 30
Fig.8 Analytical calculation and experimental waveforms
C gd1 /pF 15
L s(int) /nH 7 with different R g(ext)
SiC MOSFET
(CMF20120D) V th0 /V 4
V th /V 5.9
R g(int) / 5
C oxd /nF 1.1
V ds0 /V 4
V dgj0 /V 2.3
gdj 0.5
C ds2 /pF 95
C gd0 /pF 571
C gd2 /pF 11
L s(int) 9 R g(ext)
C jD0 /nF 1.2
MOSFET
jD 0.5
Fig.9 Analytical calculation and experimental switching
SiC SBD C jD1 /pF 86
(C4D30120D) V jD0 /V 1.3 losses with different R g(ext)
L sD /nH 6.5 SiC MOSFET Cgd(ext)
C jD2 /pF 61
 68 2017 6

10 11



1

[tp, t4]
vgs Vmiller Cgs(ext)
|dv/dt|



2
SiC
[17,18]



datasheet

4
a b Si SiC
10 C gd(ext)
Fig.10 Analytical calculation and experimental
waveforms with different C gd(ext)



SiC MOSFET SiC SBD
SiC MOSFET



SiC
11 C gd(ext)
MOSFET datasheet
Fig.11 Analytical calculation and experimental switching
losses with different C gd(ext)

8 11
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