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Layer Description Representation

metal

m1 m2 m3 m4 m5

well

nw

polysilicon

poly

contacts & vias

ct v12,v23,v34,v45 nwc pwc

active area
and FETs
ndif pdif nfet pfet

select

nplus pplus prb

Colorplate 1. CMOS layers and representations


(for vanilla 0.25 m CMOS process)

0.3 (contact to contact)

m1 0.36
m2

via contact
0.14 (poly to contact)
poly

0.09 (metal to contact)

poly-m1
poly-m1-m2 overlap overlap
0.14 (ndif to contact)

m1

0.28 (transistor to contact) 0.35


poly
metal-to-poly
n+ contact

Colorplate 4. Design rules regarding contacts and vias.


Overlapping layers are marked by merged colors.
1.2

well (n)
0.6 m1 0.32 m2 0.4

1.2

0.4
0.32
active (n) 0.4

0.3

0.4 m4 0.4
polysilicon m3
0.36

0.24
0.4 0.4

0.44

m5 0.46
0.44 n+

0.1 0.44
select 0.44
p+
contact via
0.44
0.3 0.35

0.44 0.3 0.36

p+
poly
0.14

0.36

transistor 0.44

0.6
well boundary
n+ select p+ select
n-well contact p-well contact

implicit p-substrate

Colorplate 5. Design rules regarding well contacts and


select layers.

n-well contact

Vdd
PMOS

In Out

poly-metal
contact

NMOS
GND

p-well contact

Colorplate 6. m CMOS technology.

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