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VS-ST300C Series

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Vishay Semiconductors
Phase Control Thyristors
(Hockey PUK Version), 650 A
FEATURES
Center amplifying gate
Metal case with ceramic insulator
International standard case TO-200AB (E-PUK)
Designed and qualified for industrial level
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS
TO-200AB (E-PUK) DC motor controls
Controlled DC power supplies
PRODUCT SUMMARY AC controllers
Package TO-200AB (E-PUK)

Diode variation Single SCR

IT(AV) 650 A
VDRM/VRRM 400 V to 2000 V
VTM 2.18 V
IGT 100 mA
TJ -40 C to 125 C

MAJOR RATINGS AND CHARACTERISTICS


PARAMETER TEST CONDITIONS VALUES UNITS
650 A
IT(AV)
Ths 55 C
1290 A
IT(RMS)
Ths 25 C
50 Hz 8000
ITSM A
60 Hz 8380
50 Hz 320
I2t kA2s
60 Hz 292
VDRM/VRRM 400 to 2000 V
tq Typical 100 s
TJ -40 to 125 C

ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VOLTAGE VDRM/VRRM, MAXIMUM REPETITIVE VRSM, MAXIMUM IDRM/IRRM MAXIMUM AT
TYPE NUMBER PEAK AND OFF-STATE VOLTAGE NON-REPETITIVE PEAK VOLTAGE TJ = TJ MAXIMUM
CODE
V V mA
04 400 500
08 800 900
12 1200 1300
VS-ST300C..C 50
16 1600 1700
18 1800 1900
20 2000 2100

Revision: 25-Nov-13 1 Document Number: 94403


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VS-ST300C Series
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ABSOLUTE MAXIMUM RATINGS


PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current 180 conduction, half sine wave 650 (320) A
IT(AV)
at heatsink temperature double side (single side) cooled 55 (75) C
Maximum RMS on-state current IT(RMS) DC at 25 C heatsink temperature double side cooled 1290
t = 10 ms No voltage 8000
Maximum peak, one-cycle t = 8.3 ms reapplied 8380 A
ITSM
non-repetitive surge current t = 10 ms 6730
100 % VRRM
t = 8.3 ms reapplied 7040
Sinusoidal half wave,
t = 10 ms initial TJ = TJ maximum 320
No voltage
t = 8.3 ms reapplied 292
Maximum I2t for fusing I2t kA2s
t = 10 ms 100 % VRRM 226
t = 8.3 ms reapplied 207
Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 3200 kA2s
Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.97
V
High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 0.98
Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.74
m
High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.73
Maximum on-state voltage VTM Ipk = 1635 A, TJ = TJ maximum, tp = 10 ms sine pulse 2.18 V
Maximum holding current IH 600
TJ = 25 C, anode supply 12 V resistive load mA
Typical latching current IL 1000

SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate Gate drive 20 V, 20 , tr 1 s
dI/dt 1000 A/s
of rise of turned-on current TJ = TJ maximum, anode voltage 80 % VDRM
Gate current 1 A, dIg/dt = 1 A/s
Typical delay time td 1.0
Vd = 0.67 % VDRM, TJ = 25 C
s
ITM = 300 A, TJ = TJ maximum, dI/dt = 40 A/s,
Typical turn-off time tq 100
VR = 50 V, dV/dt = 20 V/s, gate 0 V 100 , tp = 500 s

BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise
dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/s
of off-state voltage
Maximum peak reverse and IRRM,
TJ = TJ maximum, rated VDRM/VRRM applied 50 mA
off-state leakage current IDRM

Revision: 25-Nov-13 2 Document Number: 94403


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VS-ST300C Series
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TRIGGERING
VALUES
PARAMETER SYMBOL TEST CONDITIONS UNITS
TYP. MAX.
Maximum peak gate power PGM TJ = TJ maximum, tp 5 ms 10.0
W
Maximum average gate power PG(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 2.0
Maximum peak positive gate current IGM TJ = TJ maximum, tp 5 ms 3.0 A
Maximum peak positive gate voltage + VGM 20
TJ = TJ maximum, tp 5 ms V
Maximum peak negative gate voltage - VGM 5.0
TJ = - 40 C 200 -
DC gate current required to trigger IGT TJ = 25 C 100 200 mA
Maximum required gate trigger/
TJ = 125 C current/voltage are the lowest 50 -
TJ = - 40 C value which will trigger all units 2.5 -
12 V anode to cathode applied
DC gate voltage required to trigger VGT TJ = 25 C 1.8 3.0 V
TJ = 125 C 1.1 -

DC gate current not to trigger IGD Maximum gate current/voltage 10.0 mA


not to trigger is the maximum
TJ = TJ maximum value which will not trigger any
unit with rated VDRM anode to
DC gate voltage not to trigger VGD cathode applied 0.25 V

THERMAL AND MECHANICAL SPECIFICATIONS


PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range TJ - 40 to 125
C
Maximum storage temperature range TStg - 40 to 150
DC operation single side cooled 0.09
Maximum thermal resistance, junction to heatsink RthJ-hs
DC operation double side cooled 0.04
K/W
DC operation single side cooled 0.02
Maximum thermal resistance, case to heatsink RthC-hs
DC operation double side cooled 0.01
9800 N
Mounting force, 10 %
(1000) (kg)
Approximate weight 83 g
Case style See dimensions - link at the end of datasheet TO-200AB (E-PUK)

RthJ-hs CONDUCTION
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
CONDUCTION ANGLE TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180 0.010 0.011 0.007 0.007
120 0.012 0.012 0.012 0.013
90 0.015 0.015 0.016 0.017 TJ = TJ maximum K/W
60 0.022 0.022 0.023 0.023
30 0.036 0.036 0.036 0.037
Note
The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC

Revision: 25-Nov-13 3 Document Number: 94403


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VS-ST300C Series
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Maximum Allowable Heatsink Temperature (C)

Maximum Allowable Heatsink Temperature (C)


130 130
ST300C..C Series ST300C..C Series
120 120 (Double Side Cooled)
(Single Side Cooled)
110 R thJ-hs (DC) = 0.09 K/W 110 R thJ-hs (DC) = 0.04 K/W
100
100
90
90
Conduction Angle 80 Conduction Period
80
70 30
70 60
30 60
60 60 50 90
90
50 120 120
180 40
40 30 180
DC
30 20
0 100 200 300 400 500 0 200 400 600 800 1000 1200 1400
Average On-state Current (A) Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics
Maximum Allowable Heatsink Temperature (C)

Maximum Average On-state Power Loss (W)


130
1600
180
ST300C..C Series 120
120 1400
(Single Side Cooled)
110 90
R thJ-hs (DC) = 0.09 K/W 1200 60
100 30
90 1000
RMS Limit
80 Conduction Period 800
70
600
60
400 Conduction Angle
50 30
40 60 90 ST300C..C Series
200
30 120 T J = 125 C
180 DC
20 0
0 200 400 600 800 0 100 200 300 400 500 600 700
Average On-state Current (A) Average On-state Current (A)

Fig. 2 - Current Ratings Characteristics Fig. 5 - On-State Power Loss Characteristics


Maximum Allowable Heatsink Temperature (C)

Maximum Average On-state Power Loss (W)

130 1800
ST300C..C Series DC
120 1600 180
(Double Side Cooled)
110 R thJ-hs (DC) = 0.04 K/W 120
1400 90
100 RMS Limit
90 1200 60
30
80 1000
Conduction Angle
70
800
60
50 600 Conduction Period
40 30
60 90 400
30 120 ST300C..C Series
200 T J = 125 C
20 180
10 0
0 200 400 600 800 1000 0 200 400 600 800 1000 1200
Average On-state Current (A) Average On-state Current (A)

Fig. 3 - Current Ratings Characteristics Fig. 6 - On-State Power Loss Characteristics

Revision: 25-Nov-13 4 Document Number: 94403


For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST300C Series
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Vishay Semiconductors

7500
Peak Half Sine Wave On-state Current (A)

8000

Peak Half Sine Wave On-state Current (A)


At Any Rated Load Condition And With Maximum Non Repetitive Surge Current
7000 Rated VRRM Applied Following Surge. 7500 Versus Pulse Train Duration. Control
Initial TJ = 125 C Of Conduction May Not Be Maintained.
6500 @ 60 Hz 0.0083 s 7000 Initial TJ = 125 C
@ 50 Hz 0.0100 s 6500 No Voltage Reapplied
6000 Rated VRRM Reapplied
6000
5500
5500
5000
5000
4500
4500
4000 4000
3500 ST300C..C Series 3500 ST300C..C Series
3000 3000
1 10 100 0.01 0.1 1
Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s)

Fig. 7 - Maximum Non-Repetitive Surge Current Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled Single and Double Side Cooled

10000
T = 25C
Instantaneous On-state Current (A)

TJ = 125C

1000

ST300C..C Series

100
0 1 2 3 4 5 6 7 8 9
Instantaneous On-state Voltage (V)

Fig. 9 - On-State Voltage Drop Characteristcs


Transient Thermal Impedance Z thJ-hs (K/W)

0.1
Steady State Value
R thJ-hs = 0.09 K/W
(Single Side Cooled)
R thJ-hs = 0.04 K/W
(Double Side Cooled)
(DC Operation)
0.01

ST300C..C Series

0.001
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)

Fig. 10 - Thermal Impedance ZthJ-hs Characteristics

Revision: 25-Nov-13 5 Document Number: 94403


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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST300C Series
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100
Rectangular gate pulse (1) PGM = 10W, tp = 4ms
a) Recommended load line for (2) PGM = 20W, tp = 2ms

Instantaneous Gate Voltage (V)


rated di/dt : 20V, 10ohms; tr<=1 s (3) PGM = 40W, tp = 1ms
b) Recommended load line for (4) PGM = 60W, tp = 0.66ms
<=30% rated di/dt : 10V, 10ohms
10 tr<=1 s (a)
(b)

Tj=-40C
Tj=25C
Tj=125C
1
(1) (2) (3) (4)
VGD
IGD Device: ST300C..C Series Frequency Limited by PG(AV)
0.1
0.001 0.01 0.1 1 10 100
Instantaneous Gate Current (A)
Fig. 11 - Gate Characteristics

ORDERING INFORMATION TABLE

Device code VS- ST 30 0 C 20 C 1 -

1 2 3 4 5 6 7 8 9

1 - Vishay Semiconductors product


2 - Thyristor
3 - Essential part number
4 - 0 = Converter grade
5 - C = Ceramic PUK
6 - Voltage code x 100 = VRRM (see Voltage Ratings table)
7 - C = PUK case TO-200AB (E-PUK)
8 - 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = Eyelet terminals (gate and auxiliary cathode soldered leads)
3 = Fast-on terminals (gate and auxiliary cathode soldered leads)
9 - Critical dV/dt: None = 500 V/s (standard value)
L = 1000 V/s (special selection)

LINKS TO RELATED DOCUMENTS


Dimensions www.vishay.com/doc?95075

Revision: 25-Nov-13 6 Document Number: 94403


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Outline Dimensions
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Vishay Semiconductors
E-PUK (TO-200AB)
DIMENSIONS in millimeters (inches)

Anode to gate
Creepage distance: 11.18 (0.44) minimum
Strike distance: 7.62 (0.30) minimum

25.3 (0.99)
DIA. MAX.
0.3 (0.01) MIN.

G
14.1/15.1
(0.56/0.59)

A
0.3 (0.01) MIN.
25.3 (0.99) Gate terminal for
DIA. MAX. 1.47 (0.06) DIA.
pin receptacle

Note:
A = Anode
40.5 (1.59) DIA. MAX.
C = Cathode
G = Gate

2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep

6.5 (0.26)

4.75 (0.19)

25 5

42 (1.65) MAX.

28 (1.10)

Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)

Revision: 12-Jul-17 1 Document Number: 95075


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Legal Disclaimer Notice
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Disclaimer

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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.

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Revision: 08-Feb-17 1 Document Number: 91000

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