1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS1 technology, featuring very low on-state resistance.
Product availability:
BUK7275-100A in SOT428 (D-PAK).
2. Features
TrenchMOS technology
Q101 compliant
175 C rated
Standard level compatible.
3. Applications
Automotive and general purpose power switching:
c
12 V, 24 V and 42 V loads
Motors, lamps and solenoids.
c
4. Pinning information
Table 1: Pinning - SOT428 (D-PAK), simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
mb
2 drain (d)
d
3 source (s)
mb drain (d) g
2
MBB076 s
1 3
Top view MBK091
SOT428 (D-PAK)
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 100 V
VDGR drain-gate voltage (DC) RGS = 20 k 100 V
VGS gate-source voltage (DC) 20 V
ID drain current (DC) Tmb = 25 C; VGS = 10 V; Figure 2 and 3 21.7 A
Tmb = 100 C; VGS = 10 V; Figure 2 15.4 A
IDM peak drain current Tmb = 25 C; pulsed; tp 10 s; Figure 3 [1] 87 A
Ptot total power dissipation Tmb = 25 C; Figure 1 89 W
Tstg storage temperature 55 +175 C
Tj operating junction temperature 55 +175 C
Source-drain diode
IDR reverse drain current (DC) Tmb = 25 C 21.7 A
IDRM pulsed reverse drain current Tmb = 25 C; pulsed; tp 10 s 87 A
Avalanche ruggedness
WDSS non-repetitive avalanche energy unclamped inductive load; ID = 14 A; 100 mJ
VDS 100 V; VGS = 10 V; RGS = 50 ;
starting T j = 25 C
9397 750 07645 Philips Electronics N.V. 2000. All rights reserved.
03aa24
03aa16
120 120
Pder Ider
(%) (%)
100 100
80 80
60 60
40 40
20 20
0 0
0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200
Tmb (oC) Tmb (oC)
Fig 1. Normalized total power dissipation as a Fig 2. Normalized continuous drain current as a
function of mounting base temperature. function of mounting base temperature.
03nb21
1000
ID
(A)
100 us
10
tp 1 ms
D.C.
P = 10 ms
T
1 100 ms
tp t
T
0.1
1 10 100 VDS (V) 1000
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7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter Conditions Value Unit
Rth(j-a) thermal resistance from junction to ambient minimum footprint, FR4 board 71.4 K/W
Rth(j-mb) thermal resistance from junction to mounting Figure 4 1.7 K/W
base
03nb22
10
Zth(j-mb)
(K/W)
1 = 0.5
0.2
0.1
tp
0.1 0.05
P =
T
0.02
Single Shot
tp t
T
0.01
10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 07645 Philips Electronics N.V. 2000. All rights reserved.
8. Characteristics
Table 5: Characteristics
Tj = 25 C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V
Tj = 25 C 100 V
Tj = 55 C 89 V
VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 C 2 3 4 V
Tj = 175 C 1 V
Tj = 55 C 4.4 V
IDSS drain-source leakage current VDS = 100 V; VGS = 0 V
Tj = 25 C 0.05 10 A
Tj = 175 C 500 A
IGSS gate-source leakage current VGS = 20 V; VDS = 0 V 2 100 nA
RDSon drain-source on-state resistance VGS = 10 V; ID = 13 A; Figure 7 and 8
Tj = 25 C 64 75 m
Tj = 175 C 187 m
Dynamic characteristics
Ciss input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 910 1210 pF
Coss output capacitance 130 152 pF
Crss reverse transfer capacitance 80 107 pF
td(on) turn-on delay time VDD = 30 V; RL = 2.2 ; VGS = 10 V; 8 ns
tr rise time RG = 5.6 ; 39 ns
td(off) turn-off delay time 26 ns
tf fall time 24 ns
Ld internal drain inductance measured from drain lead from package to 2.5 nH
centre of die
Ls internal source inductance measured from source lead from package to 7.5 nH
source bond pad
9397 750 07645 Philips Electronics N.V. 2000. All rights reserved.
Table 5: Characteristicscontinued
Tj = 25 C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Source-drain diode
VSD source-drain (diode forward) IS = 25 A; VGS = 0 V; Figure 15 0.85 1.2 V
voltage
trr reverse recovery time IS = 13 A; dIS/dt = 100 A/s; VGS = 10 V; 64 ns
Qr recovered charge VDS = 30 V 120 nC
03nb30
03nb31 90
60 RDSon
ID (m)
VGS (V) = 8 9 10 85
(A) 20
50
7.5
80
40 75
6.5
70
30
65
20
5.5
60
10 55
4.5 50
0
0 2 4 6 8 10 5 10 15 20
VDS (V) VGS (V)
Tj = 25 C Tj = 25 C; ID = 10 A
Fig 5. Output characteristics: drain current as a Fig 6. On-state resistance: typical values.
function of drain-source voltage; typical values.
03aa29
03nb32
3
120 a 2.8
RDSon
2.6
(m) VGS (V)= 5.5 10
6 6.5 7 8 2.4
2.2
100
2
1.8
1.6
80 1.4
1.2
1
0.8
60 0.6
0.4
0.2
0
40
-60 -20 20 60 100 140 180
0 10 20 30 40 50
ID (A) Tj (oC)
Tj = 25 C R DSon
a = ---------------------------
-
R DSon ( 25 C )
Fig 7. Drain-source on-state resistance as a function Fig 8. Normalized drain source on-state resistance
of drain current; typical values. factor as a function of junction temperature.
9397 750 07645 Philips Electronics N.V. 2000. All rights reserved.
03aa32 03aa35
5 10-1
4.5 ID
VGS(th)
4 (A)
(V) max. 10-2
3.5
3 10-3
typ.
2.5 min typ max
2 10-4
min
1.5
1
10-5
0.5
0
10-6
-60 -20 20 60 100 140 180
0 1 2 3 4 5
Tj (oC) VGS (V)
03nb28 03nb33
20 2000
gfs C (pF)
1800
(S)
1600
15
1400
1200
10 1000
Ciss
800
600
5
400
200
Coss
0 0 Crss
0 10 20 30 I (A) 40 0.01 0.1 1 10 100
D VDS(V)
9397 750 07645 Philips Electronics N.V. 2000. All rights reserved.
03nb29
35 10
03nb27
ID VGS
(A) (V) 9
30
8
25 VDS= 14 V
7
VDS= 80 V
20 6
5
15
O
4
Tj = 175 C
10 3
O
Tj = 25 C 2
5
1
0 0
0 2 4 6 V 8 0 10 20 30
GS (V) QG (nC)
VDS = 25 V Tj = 25 C; ID = 25 A
Fig 13. Transfer characteristics; typical values. Fig 14. Turn-on gate charge characteristics; typical
values.
03nb26
45
IS
(A)
40
35
30
25
20
O
Tj = 175 C
15
10
O
Tj = 25 C
5
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD (V)
VGS = 0 V
Fig 15. Reverse diode current; typical values.
9397 750 07645 Philips Electronics N.V. 2000. All rights reserved.
9. Package outline
Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads
(one lead cropped) SOT428
seating plane
y
A
E A A2
b2 A1 D1
mounting
base
E1
D
HE
L2
2
L1
L
1 3
b1 b w M A c
e
e1
0 10 20 mm
scale
mm 2.38 0.65 0.89 0.89 1.1 5.36 0.4 6.22 4.81 6.73 10.4 2.95 0.7
4.0 2.285 4.57 0.5 0.2 0.2
2.22 0.45 0.71 0.71 0.9 5.26 0.2 5.98 4.45 6.47 9.6 2.55 0.5
Note
1. Measured from heatsink back to lead.
98-04-07
SOT428 TO-252 SC-63
99-09-13
9397 750 07645 Philips Electronics N.V. 2000. All rights reserved.
9397 750 07645 Philips Electronics N.V. 2000. All rights reserved.
[1] Please consult the most recently issued data sheet before initiating or completing a design.
9397 750 07645 Philips Electronics N.V. 2000 All rights reserved.
For all other countries apply to: Philips Semiconductors, Internet: http://www.semiconductors.philips.com
Marketing Communications,
Building BE, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. +31 40 272 4825 (SCA70)
9397 750 07645 Philips Electronics N.V. 2000. All rights reserved.
Contents
1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
4 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
5 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
7 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7.1 Transient thermal impedance . . . . . . . . . . . . . . 4
8 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11