International Journal of Emerging Technology and Advanced Engineering
Website: www.ijetae.com (ISSN 2250-2459, ISO 9001:2008 Certified Journal, Volume 3, Issue 3, March 2013)
Modelling and Simulation of photovoltaic module considering
single-diode equivalent circuit model in MATLAB
Dominique Bonkoungou1, Zacharie Koalaga2, Donatien Njomo3
1,2
Laboratory of Materials and Environment (LAME)/ Faculty of Sciences/ University of Ouagadougou/P.O. Box 7021
Ouagadougou/ Burkina-Faso
1,3
Environmental Energy Technologies Laboratory (EETL)/ Faculty of Sciences/ University of Yaounde 1/ P.O. Box 812
Yaounde/ Cameroon
Abstract This paper presents a photovoltaic (PV) cell to
module simulation model using the single-diode five
parameter models. The model was implemented in MATLAB
software and the results have been compared with the data
sheet values and characteristics of the PV module in Standard
Test Conditions (STC). Parameters values were extracted
using Newton Raphsons method from experimental Current
(I)-Voltage (V) characteristics of Solarex MSX60 module. The
results obtained are in good agreement with the experimental
data provided by manufacturer. The approach can thus, be
very useful for researchers or engineers to quickly and easily
determine the performance of any photovoltaic module.
Keywords Matlab software, Newton Raphson,
Photovoltaic, Simulation,
I. INTRODUCTION
An accurate knowledge of solar cell parameters from
experimental data is of vital importance for the design of
solar cells and for the estimates of their performance. Thus,
different solar cell models have been developing to
describe their electrical behavior, but the electrical
equivalent circuit is a convenient and common way in most
simulation studies. The five parameters of interest in the
equivalent circuit are the photo-current (IPV), series
resistance (RS), diode saturation current (I0), parallel
resistance (RSH) and the ideality factor (A). The current-
voltage relationship of a solar cell is described by a
mathematical equation that is both implicit and nonlinear,
therefore; the evaluation of these parameters has been the
subject of investigation of several authors. While some
authors use numerical analysis methods to solve the
implicit nonlinear equation of I-V relation [1-3], others use
analytical methods with a series of simplifications and
approximations [4-6].
493
Among these methods, in view of its quadratic
convergence and enhanced accuracy, Newton Raphsons
method remains attractive with the number of variables
being limited to five parameters and their partial
derivatives easily obtainable. In this work, we elaborate a
MATLAB script file program, which uses Newton
Raphsons method to compute the five parameters of the
single diode model of illuminated solar cells. The results
obtained by simulation show the consistency between the
data and obtained the parameters given by the
manufacturer, namely: short circuit current (I SC), open
circuit voltage (VOC) and maximum power point (Pmpp). For
instance, these parameters can be used for quality control
during production or to provide insights into the operation
of the devices, thereby leading to improvements in devices.
II. MODELLING OF PHOTOVOLTAIC MODULE
Solar cell is basically a p-n junction fabricate in a thin
wafer or layer of semiconductors. The electromagnetic
radiation of solar energy can be directly converted to
electricity through photovoltaic effect [7].
When exposed to sunlight, photons with energy greater
than the band-gap energy of the semiconductor are
absorbed and create some electron-hole pair proportional to
the incident irradiation. Under the influence of the internal
electric fields of the p-n junction, these carriers are swept
apart and create a photocurrent which is directly
proportional to solar irradiation [8]. Naturally, PV system
exhibits a nonlinear current-voltage (I-V) and power-
voltage (P-V) characteristics which vary with the radiant
intensity and cell temperature. The dependence of power
generated by a PV array with changing atmospheric
conditions can readily be seen in the I-V and the P-V
characteristics of PV arrays as shown in figure 1.
 International Journal of Emerging Technology and Advanced Engineering
Website: www.ijetae.com (ISSN 2250-2459, ISO 9001:2008 Certified Journal, Volume 3, Issue 3, March 2013)
II-1. Ideal Photovoltaic model
20

To develop an accurate equivalent circuit for a PV cell,

18
it is necessary to understand the physical configuration of
16 1000 W/m2 the elements of the cell as well as the electrical
14
T= 28C characteristics of each element. The ideal equivalent circuit
800 W/m2 T=56C of a PV cell is a current source in parallel with a single-
Array Current (A)

12
diode. The configuration of the simulated ideal solar cell
2
600 W/m
10
with single-diode is shown in figure 2 [9].
8 I
400 W/m2
6
ID
4
200 W/m2
V
2
IPV D
0
0 5 10 15 20 25 30 35 40 45 50
G
Output-Voltage (V)

a) I-V characteristics at various irradiance and temperatures

(T = 28C & 56C) Fig.2: Ideal PV cell with single-diode

The equation for the output current is given by:

350

300
I I PV I D
1000 W/m2
Where V
250 I D I 0 exp
AV
1 (1)
800 W/m2
T=28C T
Array Power (Watt)

200 600 W/m2

T=56C
Then equation (1) becomes:
150 400 W/m2
V
200 W/m2 I I PV I 0 exp
AV
1
100 T (2)
50
I PV is the current generated by the incidence of light;
0
0 5 10 15 20 25 30 35 40
I0 is the diode reverse bias saturation current;
Output-Voltage (V)
Ns * k * T is the thermal voltage of a PV module
b) P-V characteristics at various irradiance and temperatures
VT
q
(T = 28C & 56C)
having Ns cells connected in series; q is the electron
Fig.1: Simulated characteristics of photovoltaic array. charge; k is the Boltzmann constant; T is the temperature of
The nonlinear nature of PV systems is apparent from the p-n junction and A the diode ideality factor.
fig.1. We note that the array current and power depend on A PV cell can at least be characterized by the short
the array terminal operating voltage. Fig.1 illustrates the circuit current (ISC); the open circuit voltage (VOC) and the
dependence of I-V characteristics on temperature and ideality factor A. The output of current source is directly
irradiance for a sample module. The trends evident in these proportional to the light falling on the cell. For the same
plots are similar for other PV module, namely, the strong irradiance and p-n junction temperature conditions, the
effect of irradiance on short circuit current and of short circuit current (ISC) is the greatest value of the current
temperature on open circuit voltage, and the weaker effect generated by the cell [10].
of irradiance on open circuit voltage and of temperature on The short current is given by:
short circuit current. For V=0, ISC = I = IPV (3)

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Website: www.ijetae.com (ISSN 2250-2459, ISO 9001:2008 Certified Journal, Volume 3, Issue 3, March 2013)
Likewise, for the same irradiance and p-n junction I for I = 0 (8)
V VOC A * VT ln 1 SC
temperature conditions, the open circuit voltage (VOC) is I0
the greatest value of the voltage at the cell terminals and it
can be written as: And the output power is given by:
I
V I * RS (9)
V VOC A * VT ln 1 SC P V I SC I 0 exp 1
I0

For I = 0 (4) A *VT
And at the same conditions, the output power is given II.3. Photovoltaic model with series and parallel
by: resistances

V The PV model devices are basically represented in two
P V I SC I 0 exp
A *V
1

different models with series and parallel resistances:
T (5) Single-diode model with series and parallel resistances and
II.2. Photovoltaic model with single-diode and series double diode model with series and parallel resistances
resistance II.3.1. Photovoltaic model with single-diode, series and
More accuracy and complexity can be introduced to the parallel resistances
previous model by adding a series resistance. The circuit Photovoltaic cell models have long been a source for the
diagram of this model is shown in figure 3. description of photovoltaic cell behavior. The most
I
common model used to predict energy production in
ID photovoltaic cell modeling is the single diode lumped
RS
circuit model [15]. In the single diode model, there is a
IPV D
V current source parallel to a diode. The current source
G
represents light-generated current IPV that varies linearly
with solar irradiation. This is the simplest and most widely
used model as it offers a good compromise between
Fig.3: PV circuit model with single-diode and series resistance simplicity and accuracy [16, 17]. Figure 4 shows the single
diode equivalent circuit model of PV cell which is
For the same irradiation and temperature conditions, the
commonly used in many studies and provides sufficient
inclusion of a series resistance in the model implies [11]
accuracy for most applications.
the use of a recurrent equation to determine the output
current in function of the terminal voltage. The I-V I
characteristics of the solar cell are given by [12]:
ID ISH RS
V I * RS (6)
I I PV I 0 exp
A *V
1
T D RSH
V
IPV
A simple iterative technique initially tried only G
converged for positive current [13]. The Newton Raphsons
method converges more rapidly and for both positive and
Fig.4: PV circuit model with a single-diode, series and parallel
negative currents [14]. In this case, the short circuit current resistances
ISC is given by:
As mentioned previously, equation (6) doesnt
I * RS for V = 0 (7) adequately represent the behavior of the cell when
I SC I I PV I 0 exp PV 1
A *VT subjected to environmental variations, especially at low

voltage [14].
Normally the series resistance is small and negligible in A more practical model can be seen in figure 4, where
computing (eq.7). Hence, it uses equation (2) as a good RS represents the equivalent series resistance and RSH the
approximation of equation (7).The open circuit voltage VOC parallel resistance. According to [18] and based on the
can be written as: equivalent circuit of a photovoltaic panel, its characteristic
equation is deduced.

495
 International Journal of Emerging Technology and Advanced Engineering
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V I * RS V I * RS Where I 01 is the reverse saturation current due to
I I PV I 0 exp 1 (10)
A *VT RSH diffusion; I 02 is the reverse saturation current due to
This model yields more accurate result than the PV recombination in the space charge layer. A1 1 is the
model with series resistances RS but at the expense of
diode D1 ideality factor and A2 1.2 is the diode D2
longer computational time.
ideality factor. All others parameters are explained
II.3.2. Photovoltaic model with two diode, series and previously.
parallel resistances The light-generated current of the module depends
In this model, an extra diode is attached in parallel to the linearly on solar irradiation and is also influenced by
circuit of single-diode model (fig.4).This diode is included temperature [15, 21] according to equation (15):
to provide a more accurate I-V characteristic curve that
I PV I PV ,n K i * T *
G (15)
considers for the difference in flow of circuit at low current
Gn
values due to charge combination in the semiconductors
depletion [19, 20].
I Where I PV ,n is the light-generated current of the
IPV ID1 ISH module at Standard Test Conditions (STC).
ID2
RS The diode saturation current I 0 dependence on
temperature can be expressed by [16]:
RSH V
G T
3
q * Eg 1 1 (16)
I 0 I 0,n * n * exp
T A* K Tn T
Fig.5: PV circuit model with two-diode, series and parallel resistances
Where E g is the band-gap energy of the semiconductor
The accuracy of these models is more than the single-
diode model but there are some difficulties to solve the ( Eg 1.12 eV for the polycrystalline Silicon at 25C)
equation. For simplicity, the single diode model of fig.4 is
[12, 16, 22] and I 0,n the nominal saturation current
preferred and is used in this work. The basic equation (6) of
two-diode model of the PV cell is given by the following expressed by equation (17) at Standard Test Condition
equation: (STC) [16].

I I PV I D1 I D 2 (11) I SC,n (17)

I 0,n
VOC ,n
V exp
A *V
1

where I
D1 I 01 * exp 1 (12)
T ,n

A1 *VT
Now, the single diode model of PV device can be
improved by modifying the above equations
V (13)
I D 2 I 02 * exp
A *V
1
(18)
2 T
I SC, n K i * T
I 0,n
After the combination of equation (12) and (13) and the VOC ,n K v * T
exp

1

inclusion of additional parameters RS and RSH, equation A * VT ,n

(11) becomes:
V RS * I V RS * I V RS * I
Where I SC,n is the short circuit current ; VOC ,n the
I I PV I 01 * exp 1 I 02 * exp 1 (14)
A1 * VT A2 * VT RSH open circuit voltage ; VT ,n the thermal voltage ; Gn the
irradiance and Tn the temperature , all at Standard Test
Conditions.

496
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K i and K v are short circuit temperature coefficient
and open circuit temperature coefficient respectively. Since
the saturation current has strong temperature dependence;
equation (18) results in a linear variation of I 0,n with
respect to temperature T. The models validity with the
new equation has been tested experimentally [16].
III. DETERMINATION OF MODEL PARAMETERS
All model parameters can be determined by examining
the manufacturers specification of photovoltaic products.
The performance characteristics of a PV module depend on
its basic materials, manufacturing technology and operating
conditions. The most important points widely used for
describing the cell electrical performance are: the short
circuit point where the current is at maximum (short circuit
current ISC) and the voltage over the module is zero; the
open circuit point where the current is zero and the voltage
is at maximum (open circuit voltage VOC); the Maximum
power point where the product of current and voltage has
its maximum. The power delivered by a PV cell attains a
maximum value at the points (Imp, Vmp).
2 simultaneously to obtain the values of the parameters [19,
X: 0
Y: 1.95 X: 24.24
Y: 1.83
1.5
Output Current(A)
1 X: 0
Y: 0.75
X: 22.38
Y: 0.7038
X: 0
0.5 Y: 0.375
X: 20.97
Y: 0.3519
X: 26.63
Y: 0
0
0 5 10 15 20 X: 24.8 25
Output Voltage(V) Y: 0
Fig.6: A typical I-V plot for a three solar cells. The open-circuit
voltage and short-circuit current are labeled by VOC and ISC
respectively. The point of maximum power is denoted by (Vmp, Imp).
Typically, three points (ISC, 0), (VOC, 0) and (Vmp, Imp)
are provided by the manufacturers datasheet at Standard
Test Conditions. An accurate estimation of these points for
other conditions is the main goal of every modeling
technique. From the aforementioned models, it is obvious
that the PV cell acts as a current-source near the short
circuit point and as a voltage-source in the vicinity of the
open-circuit point.
Therefore, the series resistance RS, which represents
structural resistances of photovoltaic panel [16, 20], has a
strong effect in the voltage-source region. In turn, the shunt
resistance RSH that accounts for current leakage in [10] the
p-n junction, is of great importance in the current-source
region and the maximum power point appears to be
compromise of the hybrid behavior of the cell between both
voltage and current-source region.
IV. METHOD TO DETERMINE THE UNKNOWN
PARAMETERS
The aforementioned equations (10) and (14) are implicit
and nonlinear; therefore, it is difficult to arrive at an
analytical solution for a set of model parameters at a
specific temperature and irradiance. Models that use
constant parameters have been proposed [22]. The five
parameters (IPV, I0, A, RS and RSH ) model as seen in
equation (10) assumes that the dark current of a PV system
can be described by a single exponential dependence
modified by a diode quality factor A. The values of the
five parameters in the equation (10) must be determined to
reproduce the I-V curve of a PV system. This requires five
equations containing five unknowns that should be solved
20]. G .Walker [7] has further simplified this model by
removing the shunt resistance RSH to obtain a model as the
four parameters model. This model reliably predicts the
performance of single crystal and polycrystalline PV
systems. The four parameters model assumes that the slope
of the I-V curve is flat at the short circuit condition
dI (19)
0
dV V 0
However, this assumption is not valid for amorphous PV
30
X: 28.67
systems. The short circuit I-V is finite and negative, so the
Y: 0 four parameters model cant reproduce exactly the I-V
characteristics of amorphous silicon. As mentioned
previously, there are key points on the I-V curve of a
photovoltaic cell. For the five parameters model, the first
equation is derived from open circuit condition where I =0
and V = VOC. Equation (10) becomes
V VOC
0 I PV I 0 *exp OC 1 (20)
A *VT RSH
The second equation occurs at short circuit condition
where
I = ISC and V =0. Then equation (10) becomes
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I *R I SC * RS After substituting in equation (23) the following
I SC I PV I 0 * exp SC S 1 (21) equation is obtained:
A * VT RSH
I mpp 1 I mpp Vmpp I mpp * RS 1 I mpp
I 0 * 1 * RS * exp 1 * RS
The measured current voltage pair at the maximum
power point can be substituted into equation (10) to obtain
Vmpp VT Vmpp A *VT R SH Vmpp
the third equation where I = Impp and V= Vmpp (29)
The five parameters (IPV, I0, A, RS and RSH) can be
Vmpp I mpp * RS Vmpp I mpp * RS
I mpp I PV I 0 * exp 1 (22) obtained simultaneously solving these equations in
A *VT RSH MATLAB using iterative method like Newton Raphsons
method to solve system of nonlinear equations. For
These three equations are obtained using the key points. notational convenience, the following can be defined:
In order to get another two equations, we can differentiate
equation (10) with respect to V; thus we get: dV (30)
RS 0
dI V VOC
dI 1 dI V I * RS 1 dI (23)
I 0 * 1 * RS exp 1 * RS
T SH (31)
dV V dV A * V R dV dV
T RSH 0
dI I ISC
Again at the open circuit point on the I-V curve, V =
Based on the work [21, 22], R S0 and RSHO can be
VOC and I = 0, therefore dI dI after substituting
dV dV I 0 obtained experimentally from the I-V curve. Thus the
initial can be calculated by calculating the diode ideality
in equation (23) we obtain the following results:
factor [23]:
dI 1 dI V 1 dI (24)
I 0 * * 1 * RS exp OC * 1 * RS Vmpp I mpp * RSO VOC
dV I 0 VT dV I 0 A *VT R p dV I 0 A

Vmpp I mpp
Again at the short circuit point on the I-V curve I = ISC VT * ln I SC
V
I mpp ln I SC OC
and V = 0, dI dI after substituting in equation R SHO RSH I OC V
SC
RSHO
dV dV V 0
(23), we obtain: (32)

1 dI
The rest of the initial of the parameters can be found
dI V 1 dI
I 0 * * 1 * RS exp OC * 1 * RS (25) from the following equations [11, 24]
dV V 0 VT dV V 0 T p
A * V R dV V 0
RSH RSH 0 (33)
The power transferred from the P-V device at any point
is given by:
VOC VOC (34)
I0
I SC R
exp
A *V
P I *V (26) SH T

An addition equation can be derived using the fact that

A * VT VOC (35)
on the P-V characteristic of a PV system at the maximum RS RS 0 exp
A *V

power point, the derivative of power with voltage is zero I0 T

d I * V
V V
dP
mp p

I
dI
*V 0 (27) RS I SC * RS (36)
I PV I SC *
dV I I mp p dV dV 1 R I 0 exp
A *V
1
SH T

dI I mpp To compute the five parameters I PV , I 0 , RS , A and

We get (28)
dV Vmpp RSH which are necessary to apply equation (10), the above
equations (32)-(36) have been used.

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Finally, the equation of I-V characteristics is solved VI. RESULTS AND DISCUSSION
using the Newton Raphsons method. In order to validate the modeling and simulation method
presented above for PV module, the calculated values and
V. NUMERICAL METHOD FOR PV CELL MODELING experimental values are compared for a commercial
In many Physics, Chemistry and Engineering problems, polycrystalline silicon cells from Solarex MSX60 module,
expression where linear and exponential responses are composed of one parallel string of 36 solar cells. The
combined appear. For instance, the implicit transcendental electrical characteristics of Solarex MX60 module for G
equation (10) of the PV cell five parameters model I-V =1000W/m2 and T=25C, at Standard Test Condition can
characteristic cant be solved explicitly for its output be seen on table 1.
current or voltage using the common elementary functions. Table.1
This has prompted many attempts using iterative or Solarex MSX-60 specifications (1kW/m, 25C)
analytical approximations of such systems [25]. The
Newton Raphsons method, which is widely used for Characteristics Specifications
obtaining roots of implicit transcendental equations, is
Typical peak power (Pmpp) 60 W
popular in iterative computational applications because of
its simplicity and fast convergence [23, 26]. Newton Voltage at peak power (Vmp) 17.1 V
Raphson iteration is a numerical technique used for finding
approximations to real roots of the equation f ( I ) 0 Current at peak power (Imp) 3.5 A
given in the form of an iterative equation:
Short-circuit current (Isc) 3.8 A
f (I ) (37)
I n 1 In ' n Open-circuit voltage (Voc) 21.1 V
f (I n )
Temperature coefficient of -(8010)mV/C
Where n denotes the n th iteration open-circuit voltage ( KV)
and f ' ( I ) d f ( I ). This iterative process can be
dI Temperature coefficient of (0.0650.01)% /C
short-circuit current (KI)
concluded when the difference between I n 1 and I n
reaches an acceptably small value. Using equation (37), the Approximate effect of -(0.50.015) %/ C
output current of a PV cell can be calculated by modifying temperature on power
the I-V relation of five parameter model in equation (10) as
follows: Nominal operating cell 472C
temperature (NOCT)
V I * RS V I * RS (38)
f ( I ) I I PV I 0 * exp I0 0
A *VT RSH
Table.2:
The calculated data of the parameters for Solarex MSX-60 at 25C,
I 0 * RS V I * RS R (39) AM1.5, and 1kW/m.
f ' (I ) 1
* exp S

A *VT A * VT R SH
Parameters Calculated Values
By using the above equations, the following output
current is computed iteratively
V I n * RS V I n * RS I0 1.859 x 10-7 A
I n I PV I 0 * exp I0
A *VT RSH ( 40)
I n1 I n IPV 3.8119 A
I *R V I n * R S RS
1 0 S * exp
A *VT A *VT RSH RS 0.180

RSH 360.002

A 1.360

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4 4
(Vmp, Imp)
X: 0
Y: 3.8
3 3
Output Current(A)

Experimental Values

Output Current(A)
Calculated Values
2
2

1
1

0
0 5 10 15 20 25 30 0
Output Voltage(V) 0 5 10 15 20 X: 21.1
25 30
2
Output Voltage(V) Y: 0
Fig .7: I-V curve for MSX60 at 25C, AM1.5, and 1000 W/m
Fig.8: I-V Curve simulated at Standard Test Conditions
comparison between experimental values and calculated values.
(T=25C, G=1000 W/m2)
Fig.7 reveals consistency between experimental results
4
and predicted results. It is obvious that the calculated 1000 W/m2
values are in good agreement with the experimental values 3.5 800 W/m2
provided by panel manufacturers. Fig.8 shows the I-V 600 W/m2

characteristics at Standard Test Conditions where the three 3 400 W/m2

200 W/m2
Output Current(A)

most important points, maximum power point (V mp, Imp), 2.5

short circuit current (0,Isc) and the open circuit point (Voc,0)
data are shown after the computation of all the five 2

parameters model with numerical method. The model 1.5

curves exactly match with the experimental values at the
three points provided by data sheet in table 1. 1

Fig.9 illustrates the dependence of I-V characteristics on 0.5

temperature and irradiance for a solarex MSX-60 module.
The fig.10 shows the P-V characteristics of the PV module 0
0 5 10 15 20 25
with varying irradiance at constant temperature. From the Output Voltage(V)
graph when the irradiance increases, the output current and Fig.9: Curve I-V at T=25 C for various irradiance levels
voltage also increases. This result shows the net increase in
power output with irradiance at constant temperatures. 60
1000 W/m2
Furthermore, it is known that for a certain PV array, the
800 W/m2
voltage power characteristics are fixed for each insolation 50
600 W/m2
without intersection, as shown in fig.10. Therefore, for any
400 W/m2
Output Power(W)

given PV voltage and power, the corresponding insolation 40

200 W/m2
can be estimated. Also, in fig.11 and fig.12, the P-V and I-
V characteristics under constant irradiance (G=1000 W/m2) 30

with varying temperature are presented, respectively. From

20
these figures, when the operating temperature increases, the
output current increases dramatically while the output
10
voltage decreases marginally, which results in a net
reduction in power with a rise in temperature.
0
0 5 10 15 20 25
Output Voltage(V)
Fig.10: Curve V-P at T=25 C for different irradiances

500
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REFERENCES
70
the temperature is [1] B.BA and M.KANE Determination of polysilicon solar cell
60 from 0C to 75C parameters using electrical short-circuit current Decay method
Solid-State Electronics,vol.42,N0.4,pp.541-545, 1998; . .
with an interval of
Output Power (W)

50 25C [2] L.Sandrolini, M.Artioli,U.ReggianiNumerical method for the

extraction of photovoltaic module double-diode model parameters
40 through cluster analysis Applied Energy 87 (2010),442-451;
[3] Kashif Ishaque, Zainal Salam, Saad Mkhilef, Amir
30 ShamsudinParameter extraction of solar photovoltaic modules
T=0C using penalty-based differential evolution Applied Energy 99
20
T=75C (2012),297-308;
[4] Amit Jain, Avinashi Kapoor Exact analytical solution of the
10 parameters of real solar cells using Lambert W-fonction solar
Energy Materials & Solar cells 81 (2004) 269-277;
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 [5] Easwarakhanthan T, Bottin J, Bouhouch I, Boutrit C.Nonlinear
Output Voltage (V) minimization algorithm for determining the solar cell parameters
with microcomputers Int J Solar Eng 1986;4:112.
Fig.11: Curve P-V at G=1000 W/m2 for various Temperatures
[6] Ouennoughi Z, Chegaar M A simple method for extracting solar
cell parameters using the conductance method Solid State Electron
4 1999;43(11):19858. .
[7] Geoff Walker, Evaluating MPPT converter topologies using a
3.5 MATLAB PV model, J. Elect. Electron. Eng. Australia, vol. 21, pp.
4956, 2001.
3
Output Current (A)

[8] Huan-Liang Tsai, Ci-Siang Tu, and Yi-Jie SuDevelopment of

2.5
2 the temperature is from 0C to
75C
1.5 with an interval of 25C
1 T=0C
T=75C
0.5
0 [11]
0 2 4 6 8 10 12 14 16 18 20 22 24 26
Output Voltage (V)
Fig.12: Curve I-V at G=1000W/m2 for various Temperatures
VII. CONCLUSIONS
An accurate PV cell to module electrical model using
five parameters is presented and calculated using
MATLAB software. The open circuit I-V and P-V curves,
we obtained from the simulation of PV module designed in
MATLAB environment explains in details its dependence
on the irradiation levels. These results obtained from the
MATLAB model show excellent correspondence to
manufacturers published curves, the consistency between
the data and found the parameters given by manufacturers
(Current, Voltage and Power).This paper provides a clear
and concise understanding of the I-V and P-V
characteristics of PV module, which will serve as the
model for researchers in the field of PV modeling.
Generalized photovoltaic WCECS 2008, October 22-24, 2008, san
Francisco, USA
[9] Kashif Ishaque, Zainal SalamAn improved modeling method to
determine the model parameters of photovoltaic (PV) modules using
differential evaluation (DE) Solar energy 85 (2011) 2349-2359;
[10] M.Abdulkader, A.S.Samosir and A.H.M.YatimModeling and
Simulation based approach of photovoltaic system in simulink
model ARPN Journal of engineering and Applied Sciences
vol.7,N0.5, May 2012;
Marcelo Gradella Villala, Jonas Rafael Gazoli,and Ernesto Ruppert
FilhoComprehensive Approach to modeling and simulation of
photovoltaic arrays IEEE Transactions on power electronics,
vol.24, N0.5,May 2009;
[12] Carrero, C., Amador, J. and Analtes, S. A single procedure for
helping PV designers to select silicon PV modules and evaluate the
loss resistances, Renewable Energy 32 (2007): 25792589.
[13] Ulrich Stutenbaeumer, Belayneh Mesfin Equivalent model of
monocrystalline, polycrystalline and amorphous silicon solar cells
Renewable Energy 18 (1999) 501-512;
[14] M.T. Benmessaoud_, F.Z. Zerhouni, M. Zegrar, A. Boudghene
Stambouli, M. Tioursi New approach modeling and a maximum
power point tracker method for solar cells Computers and
Mathematics with Applications 60 (2010) 1124-1134,
[15] M.A.de Blas , J.L. Torres, E. Prieto, A. Garca Selecting a
suitable model for characterizing photovoltaic devices Renewable
Energy 25 (2002) 371380;
[16] Gwinyai Dzimano,B.S Modeling of photovoltaic systems thesis
Presented in Partial Fulfillment of the Requirements for the Degree
Master of Science in the Graduate School of The Ohio State
University

501
 International Journal of Emerging Technology and Advanced Engineering
Website: www.ijetae.com (ISSN 2250-2459, ISO 9001:2008 Certified Journal, Volume 3, Issue 3, March 2013)
[17] Ramos Hernanz, J.A; Campayo Martin,J.J; Zamora Belver,I;
Larranaga Lesaka, J.; Zulueta Guerrero,E; Puelles Perez, E
Modeling of photovoltaic module International Conference on
renewable Energies and Power Quality (ICRERPQ10), Canada
(Spain), 23th to 25th March,2010;
[18] W.De Soto, S.A.Klein, W.A.Beckman Improvement and validation
of a model for photovoltaic array performance solar Energy 80
(2006) 78-88;
[19] Basim Alsayid Modeling and Simulation of Photovoltaic Cell-
Module-Array with Two-Diode Model International Journal of
Computer Technology and Electronics Engineering (IJCTEE)
Volume 1, Issue 3, June 2012 ;
[20] Ryan C. Campbell, A Circuit-based Photovoltaic Array Model for
Power System Studies, Pg.1 Student Member, IEEE.
[21] Chan, D.S., Phang, J.C.H.,. Analytical methods for the extraction of
solar-cell single- and double-diode model parameters from IV
characteristics. IEEE Transactions on Electron devices 34, 1987,
286293
502
[22] H. Bourdoucen and A. Gastli Analytical Modelling and Simulation
of Photovoltaic Panels and Arrays Journal of Engineering Research
Vol.4, No.1 (2007) 75-81;
[23] A. Hadj Arab , F. Chenlo, M. Benghanem Loss-of-load probability
of photovoltaic water pumping systems Solar Energy 76 (2004)
713723;
[24] Daniel S.H. Chan, member IEEE and Jacob C.H. Phang, member
IEEE, Analytical Methods for the Extraction of Solar-Cell Single-
and Double-Diode Model Parameters from I- V Characteristics,
IEEE transactions on electron devices, Vol. ED-34 No.2 February
1987.
[25] Ali Naci Celik , Nasr Acikgoz Modelling and experimental
verification of the operating current of mono-crystalline photovoltaic
modules using four- and five-parameter models Applied Energy 84
(2007) 115;
[26] F.Cajori,Historical note on the Newton-Raphson method of
approximation American Mathematical monthly (1911),18,29-
32,on 30.