SU-8 MOLDING-PDMS CURING RECIPE

Preparation
- Clean the substrate with nanostript solution for 10 min, (Or) with piranha solution (H2SO4+H2O2).
- Transfer it DI water for rinsing
- Dry the substrate completely using a spin rinse dryer and hot wafer 200 C for 20 min.
- (Optional) O2 plasma at 300mTorr for 3 min. (If there are difficulties to spread the photoresist over the surface or if during the soft
bake the photoresist makes some hole in the layer.)

SU-8 Spin coating and soft baking

- For 80 um thick SU-8 layer, dispense 5 ml of SU-8 on the center of the wafer.
- Apply two step spin coating (at low speed and low acceleration during 10 to 30 seconds to spread the photoresist over the substrate and a second
step at high speed and acceleration during 30 to 60 seconds to control the layer thickness.)
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Rate (rpm) 500
Time (sec) 5
Acceleration(rpm/sec) 100

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Rate (rpm) 3000
Time (sec) 45
Acceleration(rpm/sec) 300

- Soft bake the wafer in 2 steps: (depends on SU-8 type)

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Temperature (C) 65
Time (min) 3

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Temperature (C) 95
Time (min) 9

Exposure, post baking, developing

- The SU-8 photoresist is exposed to UV light through a photomask:
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Power (mJ/cm2) 55
Time (sec) 6.5

- Post bake the wafer in 2 steps: (depends on SU-8 type)

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Temperature (C) 65
Time (min) 2

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Temperature (C) 65
Time (min) 2
Resulting thickness, height:

- Immerse the substrate in the SU-8 developer:

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Time (min) 7
Resulting thickness, height:
- Clean with IPA.
- Dry with clean air or pressurized N2.

PDMS curing
- Mix the PDMS Prepolymer and the curing agent at weight ratio of 10:1.
- Adequately stir the mixture and degas it under a vacuum for 15 min.
- For 80 um thick PDMS layer, dispense 5 ml of PDMS on the wafer.
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Rate (rpm) 1000
Time (sec) 45
Acceleration(rpm/sec) 100
Resulting height:
Soft Baking: Post Baking: