Anda di halaman 1dari 272

HB214/D

Rev. 2, Nov-2001

Rectifier Applications
Handbook

Rectifier Applications Handbook


ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further
notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does
SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different
applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or
authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other
application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC
products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and
distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal
injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of
the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION


Literature Fulfillment: JAPAN: ON Semiconductor, Japan Customer Focus Center
Literature Distribution Center for ON Semiconductor 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031
P.O. Box 5163, Denver, Colorado 80217 USA Phone: 81-3-5740-2700
Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Email: r14525@onsemi.com
Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada
Email: ONlit@hibbertco.com ON Semiconductor Website: http://onsemi.com

N. American Technical Support: 800-282-9855 Toll Free USA/Canada For additional information, please contact your local Sales
Representative

HB214/D 11/01
HB214
REV 2
Rectifier Applications Handbook

Reference Manual and Design Guide

HB214/D
Rev. 2, Nov–2001

 SCILLC, 2001
Previous Edition  1997
“All Rights Reserved’’

COVER ART
The NCP1200 10 W AC/DC Power Supply Demo Board featuring the MBRS360T3 and MUR160 Rectifiers. For more information, please
see Appendix B on page 259.
Rectifier Applications

Acknowledgments

Technical Editor
William D. Roehr, Staff Consultant
Contributions
Samuel J. Anderson Rex Ivins William C. Roman
Don Baker Nick Lycoudes Howard Russell, Jr.
Kim Gauen Michael Pecht Aristide Tintikakis
David Hollander William D. Roehr

Cho–Therm is a registered trademark of Chromerics, Inc.


Grafoil is a registered trademark of Union Carbide.
Kapton is a registered trademark of du Pont de Nemours & Co., Inc.
Kon Dux is a trademark of Aavid Thermal Technologies, Inc.
POWERTAP, SCANSWITCH, MEGAHERTZ, Surmetic, and SWITCHMODE are trademarks of Semiconductor Components Industries,
LLC (SCILLC).
Sync–Nut is a trademark of ITW Shakeproof.
Thermalsil is a registered trademark and Thermalfilm is a trademark of Thermalloy, Inc.
Thermal Clad is a trademark of the Bergquist Company.

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION


Literature Fulfillment: JAPAN: ON Semiconductor, Japan Customer Focus Center
Literature Distribution Center for ON Semiconductor 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
P.O. Box 5163, Denver, Colorado 80217 USA Phone: 81–3–5740–2700
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Email: r14525@onsemi.com
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
ON Semiconductor Website: http://onsemi.com
Email: ONlit@hibbertco.com
For additional information, please contact your local
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
Sales Representative.

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2
Rectifier Applications

Table of Contents

Page Chapter 3. continued Page


SPICE Diode Model Parameter Extraction Methods . . 56
Chapter 1. Power Rectifier Device Physics Forward CD Characteristics (IS, RS, N) . . . . . . . . . . 56
Junction Capacitance Characteristics
and Electrical Characteristics
(CEO, VJ, M, FC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Formation of Energy Bands . . . . . . . . . . . . . . . . . . . . . . . . 9
Reverse Recovery Time Characteristics (TT) . . . . . 59
Doping of Semiconductors . . . . . . . . . . . . . . . . . . . . . . . . 12
Temperature Characteristics (EG, XTI) . . . . . . . . . . . 61
The Electrical Resistivity and Conductivity
Reverse Breakdown Characteristics (BV, IBV) . . . . 62
of Silicon and Gallium Arsenide . . . . . . . . . . . . . . . . . . . 13
Example Parameter Extractions for the
The Fermi Level Concept . . . . . . . . . . . . . . . . . . . . . . . . . 15
MURHB4OCT Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
Surface Properties of Semiconductors . . . . . . . . . . . . . . 15
Forward DC Characteristics (IS, RS, N) . . . . . . . . . . 63
Semiconductor Junctions . . . . . . . . . . . . . . . . . . . . . . . . . 17
Junction Capacitance Characteristics
pn Junctions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
(CJO, VJ, M, FC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
Forward Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Reverse Recover Time Characteristics (TT) . . . . . . 69
Reverse Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Temperature Characteristics (EG, XTI) . . . . . . . . . . . 69
Metal Semiconductor Junctions . . . . . . . . . . . . . . . . . 19
Reverse Breakdown Characteristics (BV, IBV) . . . . 70
Forward Bias (VA>0) and Reverser Bias (VA<0) . . . 20
Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
Real Diode Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 22
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
Forward Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Reverse Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Chapter 4. Rectifier Diode Specifications
Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
and Ratings
Dynamic Switching . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
Silicon Temperature Coefficient Formula for Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
Forward Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Voltage Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
Design Tradeoffs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Peak Repetitive Reverse Voltage (VRRM) . . . . . . . . . 77
Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Peak Working Reverse Voltage (VRWM) . . . . . . . . . . 77
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 DC Reverse Blocking Voltage (VR) . . . . . . . . . . . . . . 77
Peak Nonrepetitive Reverse Voltage (VRSM) . . . . . . 77
Reverse Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78
Chapter 2. Basic Thermal Properties of Maximum or Peak Reverse current (IRRM) . . . . . . . . 78
Semiconductors Average Reverse Current IR(AV) . . . . . . . . . . . . . . . . . 78
Thermal Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 DC Reverse Current (IR) . . . . . . . . . . . . . . . . . . . . . . . 78
Case–Mounted Rectifiers . . . . . . . . . . . . . . . . . . . . . . 33 Reverse Breakdown Voltage V(BR) . . . . . . . . . . . . . . . . . 78
Lead–Mounted Parts . . . . . . . . . . . . . . . . . . . . . . . . . . 34 Forward Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
Multiple Chip Devices . . . . . . . . . . . . . . . . . . . . . . . . . 36 Maximum (Peak) Forward Voltage (VFM) . . . . . . . . . 79
Transient Response of Semiconductors . . . . . . . . . . . . 38 Average Forward Voltage (VF(AV)) . . . . . . . . . . . . . . . 79
Thermal Response . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 DC Forward Voltage (VF) . . . . . . . . . . . . . . . . . . . . . . 79
Use of Thermal Response Data . . . . . . . . . . . . . . . . . 40 Forward Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . 79
Handling Nonretangular Pulses . . . . . . . . . . . . . . . . . 41 Current Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
Example Peak Temperature Calculations . . . . . . . . . 43 Average Forward Current (IO) . . . . . . . . . . . . . . . . . . 82
Thermal Runaway . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 Peak Surge Forward Current (IFSM) . . . . . . . . . . . . 83
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 Switching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
Forward Recovery . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
Chapter 3. The SPICE Diode Model Reverse Recovery . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
The SPICE Diode Model . . . . . . . . . . . . . . . . . . . . . . . . . 49
The Large–Signal DC Model . . . . . . . . . . . . . . . . . . . 49
Chapter 5. Basic Single–Phase
The Small–Signal AC Model . . . . . . . . . . . . . . . . . . . . 50 Rectifying Circuits
Temperature and Area Effects . . . . . . . . . . . . . . . . . . 51 Basic Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91
The Noise Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52 Current Relationships . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
The Diode Model versus a Real Diode . . . . . . . . . . . . . 53 Form Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
SPICE Diode Model Parameter Utilization Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94
Limitations and Restrictions . . . . . . . . . . . . . . . . . . . . . . 55 Harmonics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94

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Chapter 5. continued Page Chapter 8. Rectifier Voltage


Ripple Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94
Rectification Ratios . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
Multiplier Circuits
Voltage Relationships . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95 Voltage–Doubling Circuits . . . . . . . . . . . . . . . . . . . . . . . 131
Circuit Variations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96 “Universal” Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . 134
Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97 Voltage Tripling Circuits . . . . . . . . . . . . . . . . . . . . . . . . . 135
Voltage Quadruples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136
High–Order Cascade Voltage Multipliers . . . . . . . . . . . 137
Chapter 6. Polyphase Rectifier Circuits References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137
General Relationships in Polyphase Rectifiers . . . . . . 101
Chapter 9. Transient Protection of
Current Relationships . . . . . . . . . . . . . . . . . . . . . . . . 101
Voltage Relationships . . . . . . . . . . . . . . . . . . . . . . . . 102 Rectifier Diodes
Transformer Utilization . . . . . . . . . . . . . . . . . . . . . . . 102 Externally Generated Voltage Surges . . . . . . . . . . . . . 141
Ripple . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102 Internally Generated Voltage Surges . . . . . . . . . . . . . . 145
Rectification Ratio . . . . . . . . . . . . . . . . . . . . . . . . . . . 103 Surge Protection Circuits . . . . . . . . . . . . . . . . . . . . . . . . 146
Overlap . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103 Surge Current Protection . . . . . . . . . . . . . . . . . . . . . . . . 148
Common Polyphase Rectifier Circuits . . . . . . . . . . . . . 103 Fusing Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . 148
Three–Phase Half–Wave Star Rectifier Circuit . . . 103 References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
Three–Phase Inter–Star Rectifier Circuit . . . . . . . . 104
Three Phase Full–Wave Bridge Circuit . . . . . . . . . . 105 Chapter 10. Basic Diode Functions in
Three–Phase Double–Wye Rectifier with Power Electronics
Interphase Transformer . . . . . . . . . . . . . . . . . . . . . . 105 Rectification, Discontinuous Mode . . . . . . . . . . . . . . . . 156
Six–Phase Star Rectifier Circuit . . . . . . . . . . . . . . . . . 107 Catching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 158
Six–Phase Full–Wave Bridge Circuits . . . . . . . . . . . 106 Clipping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159
Comparison of Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . 107 Clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160
High–Current Parallel–Connected Diodes . . . . . . . . . . 107 Freewheeling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108 Rectification, Continuous Mode . . . . . . . . . . . . . . . . . . . 163
Forced Commutation Analysis . . . . . . . . . . . . . . . . . . . . 164
Practical Drive Circuit Problems . . . . . . . . . . . . . . . . . . 167
Chapter 7. Rectifier Filter Systems Layout Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . 168
Behavior of Rectifiers with Choke–Input Filters . . . . . . 111 The Diode Snubber . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 169
Input Inductance Requirements . . . . . . . . . . . . . . . . 114 References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 171
Voltage Regulation in Choke Input Systems . . . . . 115
Behavior of Rectifiers Used with Chapter 11. Power Electronic Circuits
Capacitor–Input Filters . . . . . . . . . . . . . . . . . . . . . . . . . . 116 Drive Circuits for Power MOSFETs . . . . . . . . . . . . . . . . 175
Analysis of Rectifiers with Drive Circuits for Bipolar Power Transistors . . . . . . . . 175
Capacitor–Input Systems . . . . . . . . . . . . . . . . . . . . . 116 Baker Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175
Design of Capacitor–Input Filters . . . . . . . . . . . . . . 117 Fixed Drive Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . 177
Diode Peak Inverse Voltage . . . . . . . . . . . . . . . . . . . . . . 120 Proportional Drive Circuit . . . . . . . . . . . . . . . . . . . . . 178
Transformer Considerations . . . . . . . . . . . . . . . . . . . . . 121 Transistor Snubber Circuits . . . . . . . . . . . . . . . . . . . . . . 179
Harmonics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121 Power Circuit Load Lines . . . . . . . . . . . . . . . . . . . . . 179
Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121 Turn–On Snubbers . . . . . . . . . . . . . . . . . . . . . . . . . . . 180
Comparison of Capacitor–Input and Turn–Off Snubbers . . . . . . . . . . . . . . . . . . . . . . . . . . . 182
Inductance–Input Systems . . . . . . . . . . . . . . . . . . . . . . 122 Overvoltage Snubbers . . . . . . . . . . . . . . . . . . . . . . . . 183
Filter Sections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122 Snubber Diode Requirements . . . . . . . . . . . . . . . . . 184
Voltage and Current Relations in Filters . . . . . . . . . 123 Power Conversion Circuits . . . . . . . . . . . . . . . . . . . . . . . 184
Graded Filters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125 Flyback Converter . . . . . . . . . . . . . . . . . . . . . . . . . . . 185
Filter Component Selection . . . . . . . . . . . . . . . . . . . 125 Forward Converter . . . . . . . . . . . . . . . . . . . . . . . . . . . 187
Example of Power Supply Design . . . . . . . . . . . . . . 126 Push–Pull DC–DC Converters . . . . . . . . . . . . . . . . . 187
Passive Component Selection . . . . . . . . . . . . . . . . . 126 Off–Line AC–DC Converters . . . . . . . . . . . . . . . . . . 191
Transformer Selection . . . . . . . . . . . . . . . . . . . . . . . . 127 Synchronous Rectification . . . . . . . . . . . . . . . . . . . . 192
Diode Selection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127 References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 192
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127 General References . . . . . . . . . . . . . . . . . . . . . . . . . . . . 194

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Page Chapter 13. continued Page

Chapter 12. Reliability Considerations Fin Efficiency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 216


Concepts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 197 Application and Characteristics of Heatsinks . . . . . . . 218
Design for Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . 198 Heatsinks for Free Convection Cooling . . . . . . . . . 218
System Architecture and Device Specification . . . 198 Heatsinks for Forced Air Cooling . . . . . . . . . . . . . . . 220
Stress Analysis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 198 Fan Laws . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 221
Derating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 198 Liquid Cooling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 221
Stress Screening . . . . . . . . . . . . . . . . . . . . . . . . . . . . 198 Component Placement . . . . . . . . . . . . . . . . . . . . . . . . . . 222
Failure Modes, Effects and References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 222
Criticality Analysis (FMECA) . . . . . . . . . . . . . . . . . . 199
Failure Data Collections and Analysis . . . . . . . . . . . 199
Practical Aspects of Semiconductor Reliability . . . . . . 199 Chapter 14. Assembly Considerations
Electrical Overstress . . . . . . . . . . . . . . . . . . . . . . . . . 199 for Printed Circuit Boards
Second Breakdown . . . . . . . . . . . . . . . . . . . . . . . . . . 199 Insertion Mounting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225
Ionic Contamination . . . . . . . . . . . . . . . . . . . . . . . . . . 200 Surface–Mount Technology . . . . . . . . . . . . . . . . . . . . . . 226
Electromigration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 Surface–Mount Rectifier Packages . . . . . . . . . . . . . 228
Hillock Formation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 Thermal Management of
Contact Spiking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 201 Surface–Mount Rectifiers . . . . . . . . . . . . . . . . . . . . 229
Metallization Migration . . . . . . . . . . . . . . . . . . . . . . . . 201 Board Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230
Corrosion of Metallization and Bond Pads . . . . . . . 201 Surface–Mount Assembly . . . . . . . . . . . . . . . . . . . . . 234
Stress Corrosion in Packages . . . . . . . . . . . . . . . . . 201 Flux and Post Solder Cleaning . . . . . . . . . . . . . . . . . 236
Wire Fatigue . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 202 Semiaqueous Cleaning Process . . . . . . . . . . . . . . . 237
Wire Bond Fatigue . . . . . . . . . . . . . . . . . . . . . . . . . . . 202
Die Fracture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 202
Die Adhesion Fatigue . . . . . . . . . . . . . . . . . . . . . . . . 202 Chapter 15. Heatsink Mounting
Cracking in Plastic Packages . . . . . . . . . . . . . . . . . . 203 Considerations
Design for Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . 203
Mounting Surface Preparation . . . . . . . . . . . . . . . . . . . . 241
Reliability Testing . . . . . . . . . . . . . . . . . . . . . . . . . . . . 204
Surface Flatness . . . . . . . . . . . . . . . . . . . . . . . . . . . . 241
High–Temperature Operating Life . . . . . . . . . . . . . . 204
Surface Finish . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 241
Temperature Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . 204
Mounting Holes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 242
Thermal Shock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 204
Surface Treatment . . . . . . . . . . . . . . . . . . . . . . . . . . . 242
Temperature/Humidity Bias (THB) . . . . . . . . . . . . . . 205
Interface Decisions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 243
Autoclave . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 205
Thermal Compounds (Grease) . . . . . . . . . . . . . . . . 243
Pressure/Temperature/Humidity Bias . . . . . . . . . . . 205
Conductive Pads . . . . . . . . . . . . . . . . . . . . . . . . . . . . 244
Cycled Temperature Humidity Bias . . . . . . . . . . . . . 205
Insulation Considerations . . . . . . . . . . . . . . . . . . . . . . . . 244
Power Temperature Cycling . . . . . . . . . . . . . . . . . . . 205
Insulation Resistance . . . . . . . . . . . . . . . . . . . . . . . . . 247
Power Cycling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 205
Insulated Electrode Packages . . . . . . . . . . . . . . . . . . . . 247
Low–Temperature Operating Life . . . . . . . . . . . . . . . 205
Fastener and Hardware Characteristics . . . . . . . . . . . 247
Mechanical Shock . . . . . . . . . . . . . . . . . . . . . . . . . . . 205
Compression Hardware . . . . . . . . . . . . . . . . . . . . . . . 247
Constant Acceleration . . . . . . . . . . . . . . . . . . . . . . . . 205
Clips . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 248
Solder Heat . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 206
Machine Screws . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 248
Lead Integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 206
Self–Tapping Screws . . . . . . . . . . . . . . . . . . . . . . . . . 248
Solderability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 206
Rivets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 248
Variable Frequency Vibration . . . . . . . . . . . . . . . . . . 206
Adhesives . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 248
Statistical Process Control . . . . . . . . . . . . . . . . . . . . . . . 206
Plastic Hardware . . . . . . . . . . . . . . . . . . . . . . . . . . . . 248
Process Capability . . . . . . . . . . . . . . . . . . . . . . . . . . . 207
Fastening Techniques . . . . . . . . . . . . . . . . . . . . . . . . . . . 249
SPC Implementation and Use . . . . . . . . . . . . . . . . . 208
Stud Mount . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 249
Chapter 13. Cooling Principles Press Fit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 249
Flange Mount . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 249
Thermal Resistance Concepts . . . . . . . . . . . . . . . . . . . 211
Tab Mount . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250
Conduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 212
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 253
Convection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 212
Natural Convection . . . . . . . . . . . . . . . . . . . . . . . . . . 213 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 257
Forced Convection . . . . . . . . . . . . . . . . . . . . . . . . . . . 214 Appendix B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 259
Radiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 214 Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 265

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Rectifier Applications

Chapter 1

Power Rectifier Device Physics and


Electrical Characteristics
Rectifier Applications

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Rectifier Applications

 

 
 
   
  


The physics of power rectifiers is different in many
aspects from that of their low–power counterparts. The
reason for this is that power rectifiers must process power r –q
with a minimum power loss with operating conditions often
covering a wide range of blocking voltages, current
densities, and frequencies.
The ability to handle forward currents from 1 A to 600 A. +q
block voltages up to 100 V, and exhibit excellent switching
behavior at frequencies up to 1 MHz are the unique
performance features of today’s silicon Schottky rectifier
technology Silicon bipolar junction rectifiers can block
voltages up to 1500 V and have current capability up to 190
A. However, in switching applications silicon bipolar
junction rectifiers require minority barrier life–time Figure 1. Bohr Hydrogen Atom Model
reduction to perform the switching behavior at the speeds
necessary for switching operations These devices have –q 2 2
higher conduction losses than slower standard and + mv
r (1.1)
4, ,  or 2
fast–recovery bipolar junction rectifiers and are selected
when switching loss dominates. where:
Circuit designers need low–loss, power rectifiers both in m = mass of the electron
conduction mode and dynamic mode operations, especially v = velocity of the electron
in high–frequency applications In this domain silicon–based Since the electron is confined to the vicinity of the nucleus
technology is rapidly approaching its performance limit and bound by a coulombic force, Bohr demonstrated that the
the current industry demand for low–loss diodes is driving possible electron energies are quantized. Hence, the energy
the quest for new semiconductor materials such as gallium states of the electron in the hydrogen atom are given by:
arsenide Schottky devices for improved performance.
To provide the necessary background for selecting and –m oq 4 1
En + @ (1.2)
using power rectifiers, this first chapter presents a review of 8h 2 2 n 2
basic semiconductor physics covering energy bands, surface where:
properties. doping. conductivity, p–n junction and m–s mo is the electron mass and h is Planck’s constant.
junction theory. From this, the diode equations for ideal Materials used in semiconductor technology can be
bipolar p–n junctions and majority carrier m–s junctions are described in terms of energy levels that electrons in an atom
developed. Next, properties of real diodes are shown; can occupy. For the purpose of this chapter, we will focus on
finally, possible tradeoffs in performance characteristics are energy levels theory. For a single crystal atom, the energy
summarized. level perspective can be considered in terms of an orbital
plan and an energy well plan. Both of these are shown in
figure 2 for the silicon atom. Since intrinsic silicon has a
Formation of Energy Bands valence of four and forms covalent bonds with four
Niels Bohr provided a model of the hydrogen atom in neighboring silicon atoms when more than one atom is
which a single electron orbits the nucleus and is held in orbit present, energy levels combine as the atoms are joined.
due to the attraction of a proton in the nucleus of the atom. As the silicon crystal is formed, the interatomic spacing
Bohr added a rule of quantization to postulate that a discrete is reduced and electron conduction bands arc formed by
set of orbits exists from the continuum of possible orbits and bringing together isolated silicon atoms. Figure 3(a) shows
this explains the discrete energy levels needed to describe the formation of energy bands as the atomic separation is
the line spectrum of atomic hydrogen. reduced during crystal formation. At absolute temperature
If we visualize the electron in a stable orbit of radius r 0K every state in the valence band will be filled, while the
about a proton of the hydrogen atom, we can equate the conduction band will be completely empty of electrons.
electrostatic force between the charges to the centripetal The arrangement of completely filled and empty energy
force, as shown in Figure 1. bands has an important effect on the electrical conductivity

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of a solid. Every solid has its own characteristic energy band The energy band diagram of intrinsic silicon is shown in
structure. The primary difference between an intrinsic Figure 4. The intrinsic silicon valence band is completely
semiconductor, an insulator, and a good conductor is the size filled with valence electrons at absolute zero and no current
of the energy bandgap. Silicon has a bandgap of 1.1 eV, can flow. But at any temperature above: absolute zero, a
compared to 8 eV for an oxide insulator. The relatively small small number of electrons possess enough thermal energy to
bandgap of silicon allows excitation of electrons from the be excited to the conduction band. For every electron excited
lower valence band shown in Figure 3(b) to the upper to the conduction band, a hole is created in the valence band.
conduction band by a reasonable amount of thermal or The intrinsic concentration of holes and electrons is
optical excitation energy. This is why silicon is a relatively small for silicon at room temperature.
semiconductor. In metals the valence and conduction bands
overlap so that electrons can move freely, resulting in high
electrical conductivity.

Excitation Orbit

Valence Orbits
12
6 Valence Electrons (4)
5 7
1

Inner Orbits

Orbital Plan 11 4 3

Orbital Electrons
2 8
10

9
13

Nucleus
14

Hole

Free Electron

Excitation Level

Increasing
Energy Valence Levels

Inner Orbital Levels


Energy Well Plan

Nucleus

Figure 2. Orbital and Energy Well View of Electrons in Silicon

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Conduction Band Carbon atoms


6 electrons/atom
N atoms
“2 s – 2p” 6 N electrons
4N “2 p”
states

6N states
2p

Eg

2N states
(a) 2s
Energy

4N “2 s”
states

Valence Band

“1 s”

2N states
1s
Diamond
Lattice
Spacing Atomic Separation

CONDUCTION BAND CONDUCTION BAND CONDUCTION BAND

(b) BAND GAP BAND GAP

VALENCE BAND VALENCE BAND VALENCE BAND

a) INSULATOR b) SEMICONDUCTOR c) CONDUCTOR

Figure 3. (a) Energy Band Versus Atomic Separation Relationship;


(b) Energy Band Gap of Insulators, Semiconductors, and Conductors

However, the intrinsic concentration doubles every 10C and is defined by Equation 1.3.
In intrinsic silicon, the number of conduction electrons, n, equals the number of holes, p, or

n + p + ni + 3.9 1016T 3ń2 exp ǒ*kTEGǓ cm * 3


(1.3)
where:
n = electron concentration, cm–3
p = hole concentration, cm–3
ni = the intrinsic carrier concentration /cm3
T = temperature, K
EG = bandgap, eV
k = Boltzman’s constant
at T = 00
At 25C ni for intrinsic silicon is:
ni = 1.5 X 1010 carriers/cm3
whereas:
ni = 1.8 X 106 carriers/cm3 for GaAs.

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Ec Conduction Band

Hole Electron Eg = 1.1 eV EI Forbidden Band


Energy Energy

Ev Valence Band

Figure 4. Energy Band Diagram for Intrinsic Silicon

Doping of Semiconductors atoms as illustrated in Figure 6(a). Four electrons of the


Semiconductor materials have no practical application in impurity atom form covalent bonds with four surrounding
their intrinsic form. To obtain useful semiconductor devices, atoms and the fifth electron is free to act as a carrier. The
controlled amounts of dopant atoms arc introduced into the pentavalent impurity is called a donor because it gives up
crystal. When dopant atoms are added, energy levels are electrons and the material is said to be n–type because it is
created near the conduction band for n–type semiconductors negatively charged with free electrons and donates electrons
and near the valence band for p–type semiconductors. The to the conduction band.
band diagrams for n–type and p–type semiconductors are

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
shown in Figure 5. Table 1. Common Silicon Dopants

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
The addition of dopant atoms increases either the electron Electron–Increasing Hole–Increasing Dopants

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
or hole concentration of the host silicon crystal. Common Dopants (Donors) (Acceptors)
silicon dopants are listed in Table 1.

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
P B
The result of doping is a change in the electrical

ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
conductivity of the crystal. If pentavalent elements such as As Column V Ga Column III

ÁÁÁÁÁÁÁÁ
antimony, phosphorus or arsenic are introduced into the Sb Elements In Elements
silicon crystal, atoms will be displaced by the impurity Al

Electrons in Conduction Band Conduction Band

Donor Ions
+ + + + + + + + + + + +

EI EI

Acceptor Ions
Valence Band
Holes in Valence band

n –type p –type

Figure 5. Band Diagram for n–type and p–type Semiconductors

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Incompleted
Locked covalent covalent bond
bond electrons
Si Si
Si Si
Free electron This electron jumps
from phosphorous + into hole left by boron
Si P Si atom drifts toward Si B Si atom. Hole position is
applied positive displaced to right.
pole This results in a drift
Si Si of holes toward the
Si Si
negative pole, giving
them the character
of mobile charges.
+ +
Applied field Applied field
a) n–type Silicon b) p–type Silicon

Figure 6. Impurity Atoms in (a) n–type Silicon; (b) p–type Silicon

If a trivalent impurity atom such as boron, gallium, V


n + d (obeys OhmȀs law)
indium, or aluminum is added to the semiconductor, the (1.7)
electrons surrounding the impurity atom cannot form a Figure 7 shows bulk carrier mobility as a function of
stable set of locked covalent bonds The tri–electron doping concentration for both electrons and holes.
structure of the impurity atom causes one incomplete bond Drift velocity is determined by the mean free time (Tf)
as shown in Figure 6(b). The result is a positively charged between collisions within the crystal lattice, this being the
material. The trivalent impurity is called an acceptor time they are accelerated in the direction of the field. Using
impurity because it accepts electrons from the valence band Newton’s law of motion, the drift velocity is given by:
and forms holes in the valence band.
qTf
When donors are added to silicon, there is a larger Vd + (1.8)
2m *
number of conduction electrons or holes, respectively. It
can be shown mathematically that where:
) * m* = conductivity effective mass
n +n@p+N @N +2
2
10 20
ń cm at 26°C
6
i D A ε = applied electric field
(1.4) Tf = mean tune between collisions in the lattice
where: since:
ND is the doping concentration per cubic centimeter for V qT
n + d + f (1.9)
donors and NA is the acceptor doping concentration per 2m
cubic centimeter.
Therefore, if n or p is known, the other carrier In uniform extrinsic crystals where the carrier
concentration can be readily found. concentration is predominantly of one type, the electrical
conductivity σn, is determined by the acceleration of carriers
The Electrical Resistivity and due to the applied electrical field and those processes which
Conductivity of Silicon and arrest carrier motion through the lattice.
Gallium Arsenide V
n + qn + qn d + q2n t (1.10)
Conduction of electricity through bulk silicon or gallium m*
arsenide is by majority carriers Resistivity is the inverse of m* = 0.98 for silicon
conductivity For n–type material it is given by: m* = 0.067 for gallium arsenide
n + nqn (1.5) Since the effective: mass of gallium arsenide is much
lower than that of silicon, the force on an electron in an
where: electric field accelerates electrons in gallium arsenide much
σn = conductivity (Ω–cm)–1 more quickly than electrons in silicon. For low field
n = electron concentration, cm–3 conduction (<103 V/cm) the scattering processes for gallium
q = electron charge arsenide and silicon are similar in magnitude, so the mean
µn = electron mobility, cm2/V–S drift velocity for low–energy carriers is much higher,
1 + resistivity
Pn is 1ń n + nq (1.6) resulting in a low–field electron mobility of 8500 cm–V–s–1
n at 300K for gallium arsenide and 1500 cm–V–s–1 at 300K
The mobility described above is the proportionality for silicon.
constant between the applied electric field (ε) and the The effective mass of the atom determines the mobility
resultant carrier drift velocity (Vd) for bulk carrier transport and hence conductivity of the semiconductor material. For
where: power rectifiers this property offers the potential for faster

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Rectifier Applications

devices with lower on–resistance when gallium arsenide is the typical resistivity tax–get used for a 40 V power
selected over silicon. Schottky. From Figure 9, for the same concentration of 1016
By taking into account the fact that mobility changes with cm–3, a resistivity of 0.05 Ω–cm is obtained with gallium
doping concentration,one can reconstruct Irvin’s curves arsenide as the semiconductor material for again a 40 V
which plot resistivity as a function of doping concentration, power Schottky device. This demonstrates the feature of low
as shown in Figure 8 for silicon and Figure 9 for gallium on–resistance potential with gallium arsenide over silicon
arsenide. but other problems pertaining to surface properties (which
From Figure 8 if a concentration of 1016 cm–3 is selected, will be discussed later in this chapter) dominate the forward
this equates to a resistivity of 0.5 Ω–cm for silicon. This is voltage drop in gallium arsenide Schottky devices.

102
1400
1000 Electrons (n–type)
800 10
600

Resistivity, Ω–cm
Mobility, cm2/V•s

400 1
Holes (p–type)
200
10–1
100
80
60 10–2
40
10–3
20

10 10–4 14
1014 1015 1016 1017 1018 1019 1020 1021 10 1015 1016 1017 1018 1019 1020 1021
Impurity Concentration, atoms/cm3 Impurity Concentration, cm–3

Figure 7. Bulk Mobility Versus Doping for Silicon Figure 8. Resistivity as a Function of Doping
Concentration (Irvin’s Curve) for Silicon [1]

102
T = 300 K
p–GaP n–type
101 n–GaP p–type
Resistivity, Ω–cm

1
p–GaAs

10–1
n–GaAs
10–2
p–Ge
n–Ge
10–3

10–4 14
10 1015 1016 1017 1018 1019 1020 1021
Impurity Concentration, cm–3

Figure 9. Resistivity Versus Impurity Concentration


for Ge, GaAs, and GaP at 3005K [2]

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The Fermi Level Concept atomically clean (i.e., the atomic composition of the surface
The fermi level is used to describe the energy level of the is the same as the bulk). The surfaces of semiconductors are
electronic state which one electron has a probability of 0.5 complex regions where the chemistry and crystallography is
of occupying. However, the fermi level also describes the quite different from the bulk Not surprisingly, the
number of electrons and holes in the semiconductor. distribution of electrons and associated energy levels also
With reference to the energy band diagram of Figure 10 differs at the surface. from those pertaining to the bulk.
Since these surfaces are critical in the formation of
E * Ei
n + ni exp f n * type (1.11) oxide–semiconductor interfaces and metal–semiconductor
kT
interfaces, it is important understand them to the fullest
E * Ef possible extent. Consider a semiconductor material like
p + ni exp i p * type (1.12)
kT silicon freshly cleaved in high vacuum to expose an
ultraclean surface. From a symmetry viewpoint, two of the
for intrinsic since Ef = Ei
four covalent bonds which hold the silicon lattice together
p + n + ni (1.13) would be broken at the crystal surface in contact with the
In other words, for the intrinsic material, the fermi level vacuum. These broken bonds are missing two electrons per
is at the midpoint of the band gap. atom, and hence, about. 1015 atoms/cm3 are in a position to
attract negative charges onto the crystal surface and give rise
Surface Properties of Semiconductors to energy states in the forbidden energy gap. In practice, the
The atoms in a crystal of silicon or gallium arsenide are silicon surface atoms when exposed to air quickly form a
arranged in a well–ordered structure so that the net force native oxide layer about 40Â thick. This satisfies the silicon
acting on each atom is zero. In the bulk crystallographic “dangling” bonds at the surface and reduces surface states
structure of silicon, each atom is surrounded by four others under clean conditions; to 5 x 1010/cm2 or less. Figure 11(a)
in a tetrahedral configuration. except for imperfections such shows the energy band diagram for the interface between a
as vacancies, substitutional or interstitial impurities, or p–type silicon crystal and a vacuum, assuming a perfect
dislocations, this configuration extends throughout the crystal in a perfect vacuum ignoring the effects of broken
single crystal. The situation at the surface of a crystal of bonds at the surface This may be referred to as the flat–band
silicon or gallium arsenide is different from that prevailing case, but obviously does not occur in practice: The real
in the bulk in many important ways. First of all, the absence situation is shown in Figure 11(b). The SiO2 layer contains
of neighboring atoms causes the equilibrium positions positive charges that result in an n–shift in the
adopted by the surface atoms to be different from the bulk. semiconductor, i.e., an n–type semiconductor behaves more
Secondly, the chemical nature of the surface tends not to be n–type, whereas p–type material behaves less p–type.

Ec Ec
Ef

Ei Ei

Ef
Ev Ev

p–type n–type

Ec = Energy level of conduction band


Ev = Energy level of valence band
Ef = Fermi energy level
Ei = Intrinsic energy level

Figure 10. Energy Band Diagram for n–type and p–type with Fermi Levels Shown

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With respect to the clean surfaces of semiconductors and to 0.9 eV, the Schottky model fails to explain the observed
metals, surface states also significantly impact device insensitivity of the barrier height to metal work function in
properties. The deposition of a metal onto a semiconductor gallium arsenide. The basic explanation for this is thought
usually gives rise to a barrier, if the work function fm of the to be surface states and interface states causing the fermi
metal is greater than the work function of the semiconductor. level to be pinned at a certain level between the conduction
For the case of a metal to n–type semiconductor, the barrier and valence band at the semiconductor surface. Unpinning
height (fB) is equal to the separation of the fermi level (Ef) of the GaAs fermi level with heavily doped silicon
and the conduction band minimum Ec at the semiconductor overlayers has been reported [1] but significant work in this
metal interface. Schottky proposed that fB be given by the area remains to be done to gain complete understanding and
difference between the metal work function and the allow realization of improved on–conduction performance
semiconductor electron affinity (XS). With measured barrier of gallium arsenide Schottky technology.
height for metals on n–type GaAs usually in the range of 0.7

Electrons

Ef
Ef

Ionized Acceptors

2000Å

Silicon
Dioxide
Interface Ions

p–type Silicon
Vacuum
p–type Silicon

Charged
Slow
States

(a) (b)

Figure 11. (a) Ideal Surface; (b) Band Rending Due to Energy States in the Forbidden Energy Gap

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Semiconductor Junctions When the two separated regions are joined, energy bands
bend to give a flat fermi level when an external voltage is
pn Junctions applied as shown in Figure 13.
The rectifying properties of a diode can be understood
most easily from its band diagram. Prior to junction
Vbi + (Ei * Efown20F)p side ) (EF * Ei)n side (1.17)
formation, the band diagram of separated n–type and p–type
silicon is shown in Figure 12. From Equation 1.6: Vbi + kT ǒpńniǓ ) kT In ǒnńniǓ (1.18)
P + ni exp(Ei * EF)ń kT (1.14a) Vbi + kT In ƪpnńni2ƫ (1.19)

From Equation 1.5:


P + ni exp(EF * Ei)ń kT (1.14b) Since p = NA and n = ND then:
Hence,
Vbi + kT In ƪNA NDńni2ƫ (1.20)
kT In (pńni) + Ei * EF and
kT In (nńni) + EF * Ei (1.15) Once the equilibrium point is reached after junction
formation, the electrons on the n–type side cannot flow
and therefore:
across to the p–type side because of the energy barrier due
Ei * Ef + dT In ǒpńniǓ and to the “built–in” contact potential similarly, holes on the
EF * Ei + kT In ǒnńniǓ (1.16) p–type side cannot flow across to the n–type side.

Ec Ec
Ef

Ei Ei

Ef
Ev Ev

Figure 12. Band Diagram Prior to Junction Formation

Vbi = The “built in” voltage or contact potential


Ec

Ei

Ev

Figure 13. Band Diagram of Ideal Pit Junction

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Forward Bias of the junction. The excess minority carriers recombine


When an external voltage is applied to the junction, the outside of the depletion layer, falling to the equilibrium
fermi level is offset at the terminals by the amount of the value within one diffusion length L.
applied voltage TIP a positive voltage is applied to the Similarly, total electron current
p–side of the junction, the pn junction is forward biased. This
Jn + Jnńdrift ) Jnńdiffusion (1.22)
applied forward bias reduces the “built–in” barrier height
and carriers’ flow across the barrier, as shown in Figure 14. The net effect of forward bias is a large diffusion current
In effect. the built–in potential is now reduced, causing a component, while the drift component remains fixed near
diffusion current of majority carriers to flow across the the thermal equilibrium value.
depletion region. Only holes with energies greater than the
“built–in” voltage qVbi can diffuse into the n–region. In Reverse Bias
addition, holes in the n–region near the depletion edge drift When the voltage applied to the p–type side is negative,
under the influence of the electric field in a direction the junction is reverse–biased. The applied voltage adds
opposite to the hole diffusion current, constituting a negative directly to the “built–in” voltage and causes the fermi level
hole amount. of the p–side to be displaced by an amount qVA. The net
result is that minority carriers are drawn toward the junction,
Total hole current and the hole diffusion current is reduced to less than its
Jp + Jpńdrift ) Jpńdiffusion (1.21) thermal equilibrium value. The reverse bias current is
The carrier flow of holes from the p–side to n–side shows extremely small because the source of current flow, the
as an increase in minority carrier concentration on the n–side minority carrier concentration, is small.

p–type

Electrons
(Vbi–VA)

Ef

hole+

n–type

Figure 14. Band Bending Due to Forward Bias Reduces “Built–in” Potential

Ec

(Vbi+VA ) Ei

Ef
Ec

Ef

Ei Ev

VA applied

Ev

Figure 15. Band Bending Due to Reverse Bias

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Rectifier Applications

Metal–Semiconductor Junctions to the ideal situation where the semiconductor is sensitive


Metal–semiconductor rectifying contacts are formed to the metal work function. For silicon Schottky
when the metal barrier is brought into contact with the technology this is accomplished by obtaining an intimate
lightly doped semiconductor material, forming an energy metal–to–semiconductor contact through the process of
barrier between the metal and the semiconductor The barrier forming a thin silicide layer under the top metal contact.
height of the metal–to–semiconductor junction depends on Table 2 shows the possible ranges of silicides that have
the semiconductor material and its surface properties as been achieved to gain control of the barrier height on
explained earlier in this chapter. The energy band diagram silicon–based Schottky rectifiers. As yet, control of the
of a rectifying metal–semiconductor contact is shown in barrier height on gallium arsenide has proven elusive due
Figure 16. to the pinning of the fermi level.
According to the Schottky model, the barrier height can be

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
determined by the difference between the metal work Table 2. Schottky Barrier Heights (FB) of Various
function (fm) and the electron affinity XS of the Silicides On n–Type Silicon
semiconductor. However, in most practical situations a thin
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ FB(eV) FB(eV)

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Disilicides Other Silicides
insulating oxide film exists at the metal–semiconductor

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
interface Such an insulation film, often referred to as an TiSi2 0.6 HfSi 0.53
interfacial layer, alters the properties of the semiconductor VSi2 0.65 MnSi 0.76
surface from the bulk semiconductor (see section on surface
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
CrSi2 0.57 CoSi 0.68
properties). The existence of this interfacial layer enhances
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ZrSi2 0.55 NiSi 0.7

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
the density of surface states near the surface and as a result
NbSi2 – Ni2Si 0.7

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
the barrier height does not follow the Schottky model of:
 b +  m * XS MoSi2 0.55 RhSi 0.74

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
(1.23)
HfSi2 – Pd2Si 0.74
Where φb = barrier height, φm = work function of metal,
Xs = electron affinity of the semiconductor.
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
TaSi2 0.59 Pt2Si 0.78
The barrier height consists of four components.
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
WSi2 0.65 PtSi 0.87
b + m * XS * SS *  (1.24)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
FeSi2 – IrSi 0.93

Where ∆SS = contribution due to surface states and A.1. is


image force lowering [3].
In practical processing of Schottky contacts, emphasis is
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
CoSi2
ÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
NiSi2
0.64
0.7
Ir2Si3
IrSi3
0.85
0.94

placed on making the metal–semiconductor contact close

Ec

(Vbi+VA ) Ei

Ef
Ec

Ef

Ei Ev

VA applied
Ev

Figure 16. Schottky Energy Band Diagram (No–bias)

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Rectifier Applications

Since the work function of the metal and the electron Since:
affinity of the semiconductor are properties of the two J M*S + k 1N Ce *DńkT + *k 1N De *qVbińkT
materials selected to form the Schottky contact, the barrier
height to electrons remains constant and does not vary with then:
applied voltage. Under no bias, electrons at the edge of’ the N De *qVbińkT + N Ce *DńkT
conduction band in the bulk semiconductor see a potential
barrier qVbi (Figure 17(a)). The number of electrons with Since B and Vbi do not change with VA then:
energies greater than Ec + qVbi traveling into the metal J + k 1N Ce *DńkT[e qVAńkT * 1] (1.30)
constitute a semiconductor–to–metal current density
component Js–m. Since under no bias the Schottky diode is J + J 0[e qVAńkT * 1] (1.31)
in equilibrium, the number of electrons transversing the
metal–semiconductor junction from metal to semiconductor which is the form of the general diode equation.
is: According to thermionic emission theory, to describe the
charge transport of electrons over a potential barrier the
J S*M + *k 1N De *qVbińkT (1.25) general form of the diode equation can be rewritten as
J M*S + *k 1N Ce *DńkT (1.26)
J + AT 2e *(qDńkT)(e qVAńkT * 1) (1.32)
where: where
Nc is the effective density of the conduction band states J = Current flow across the Schottky barrier interface
NA is the hulk majority carrier concentration from n ≡ ND. A = Richardson’s constant
T = absolute temperature
q = electron charge
Forward Bias (VA>0) and Reverse Bias (VA<0)
k = Boltzman’s constant
The applied voltage changes the potential barrier for
φB = barrier height
electrons. In the semiconductor but not for electrons in the
V = applied voltage
metal. Therefore, JS–M remains constant whereas JM–S
From Figure 17 the potential barrier for electrons in the
increases with increasing VA. With VA applied, the barrier
semiconductor increases and results in a significant decrease
for electrons in the semiconductor reduces to q(Vbi,–VA)
in the number of electrons that can get to the metal.
and becomes (see Figure 17(b)):
However, electrons in the metal see the same barrier as
J S*M + k 1N De *q(Vbi*VA)ńkT (1.27) before fB;fB does not change with reverse bias. Therefore,
the reverse current becomes
J R + J 0[e qVAńkT * 1]
The total current is
J S*M ) J M*S Since VA → (–VR) then [eqVR/kT– 1] → 0
which is JR + J0
J 0 + AT 2e *q(DńkT) (1.33)
J + k 1N De *qVbińkTe qVAńkT * k 1N De *qVbińkT (1.28)
This describes the reverse saturation current for the Schottky
J + k 1N De *qVbińkT[e qVAńkT * 1] (1.29) barrier rectifier.

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Rectifier Applications
JM –S = J S–M JS –M > J M–S

qVbi q(Vbi – VA)


Ec
Ec
ØB ØB

EFS
EFS
qVA
EFM

Ev Ev
Metal Semiconductor Metal Semiconductor

(a) (b)

q(Vbi – VA)
ØB
Ec
EFM

qVA

EFS

Ev
Metal Semiconductor

(c)

Figure 17. Schottky Barrier Rectifier Energy Band Diagrams (a) No Bias; (b) Forward Bias; (c) Reverse Bias

Similarly the diode equation for a pn junction obeys the and where:
general diode equation, which is: DP = diffusion coefficient of holes
J + J 0(e qVAńkT * 1)
Pno = concentration of minority carrier holes in n–type
(1.34)
material at equilibrium.
where: Lp = diffusion length of minority carrier holes in

J0 + qƪDLpP
P no
)
D nn po
Ln
ƫ (1.35)
p–type material
Dn = diffusion coefficient of electrons
npo = concentration of majority cater electrons in
p–type material at equilibrium.
Ln = diffusion length of minority carrier electrons in
n–type material.

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Rectifier Applications

Real Diode Characteristics Typical forward characteristics of a 45 V Schottky and a


1000 V ultrafast rectifier are shown in Figure 20(a) and (b),
Forward Bias respectively.
Real diodes do not follow the ideal diode equation In the case of the Schottky rectifier, the forward voltage
because of physical limitations of the device fabrication or consists of four components:
design techniques. The bipolar silicon rectifier is fabricated
using a p–n–n+ rectifier vertical structure, shown in Vf + B ) (kTńQ) 1n ǒJFńAT2Ǔ ) JFRspepi ) JFRspsub
Figure 18. (1.37)
In this device the n–epitaxial layer is flooded with
where:
minority cater holes during forward bias. The bulk
φB is the contribution due to barrier height in (eV).
resistance is given by:
(kT/q) ln (JF/AT2) is the contribution due to contact
R + plńA (1.36) potential (V).
where: JF RRepi specific resistance of drift region voltage drop.
p = resistivity JF RRsub substrate resistance voltage drop.
1 = drift region width JF RRepi and JF RRsub are the contributions due to the
A = drift region area. specific resistance of drift region and substrate, respectively.
This bulk resistance is reduced during forward bias as a In the case of a p–n rectifier, the forward voltage consists
result. of the injection of minority carriers from the P+ of four components also:
region. This allows the rectifier to carry high current density
Vf + Vbi ) JFRspepi ) JFRspsub ) JFRlifetime
during forward conduction. This carrier action is called
(1.38)
conductivity modulation. In a Schottky rectifier, the carrier
action is with majority carriers and no conductivity where:
modulation occurs. The charge transport mechanism in the Vbi the built–in potential described by equation 1.20
Schottky is thermionic emission as opposed to diffusion and JF Rspepi is specific resistance of drift region voltage drop
drift in the p–n–n+ structure of the bipolar rectifier. A JF Rspsub is specific resistance of substrate voltage drop
cross–section of the vertical structure Schottky is shown in JFRlifetime is specific resistance due to heavy metal lifetime
Figure 19 on the following page. reduction. In a standard recovery rectifier JFRlifetime, is zero.

Aluminum or
Titanium, Nickel, Silver Fired Passivation Glass
Top Metal

P diffusion
N–EPI

Titanium, Nickel, Silver Backmetal

Figure 18. Vertical Structure of pnn+ Rectifier

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Rectifier Applications
Schottky Barrier Metal

Isolation Barrier Metal


Aluminum or
Titanium, Nickel, Silver Nickel
Top Metal

SiO2 SiO2

p–type Guard Ring


n–type epi layer

N ++ Substrate

Titanium, Nickel, Silver Backmetal

Figure 19. Vertical Structure of Schottky Rectifier

100 100
70 70
50 50
TJ = 150°C 100°C
iF, Instantaneous Forward Current (Amps)

iF, Instantaneous Forward Current (Amps)

30 30
28°C
20 20
TJ = 150°C
10 10
7.0 7.0
5.0 5.0
3.0 3.0
100°C
2.0 2.0
28°C
1.0 1.0
0.7 0.7
0.5 0.5
0.3 0.3
0.2 0.2

0.1 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Vf, Instantaneous Voltage (Volts) Vf, Instantaneous Voltage (Volts)
(a) (b)

Figure 20. Typical Forward Voltage Characteristic


(a) Forward Voltage Characteristic of a 45 Volt Schottky MPR2O4SCT;
(b) Forward Voltage Characteristic of 1000 Volt Ultrafast MUR8100E

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Rectifier Applications

Reverse Bias passivation In general, the contribution of surface


The reverse leakage current consist of four components passivation and lifetime reduction currents tends to be much
for a bipolar p–n–n+ rectifier: higher than the space charge generation and diffusion
IR + ID ) IG ) I ) IS (1.39) components of the total reverse leakage current.
The reverse leakage current of a Schottky rectifier is
where: dominated by the barrier height of the Schottky. In general
ID =diffusion current, sometimes called saturation Schottky reverse leakage currents are approximately five
current Jo times higher than traditional Ultrafast rectifiers.
IG =space charge generation current
It =lifetime reduction current due to heavy metal
doping Lp LN depletion
IS =surface passivation.
The hole diffusion current (ID) in the drift region is
minority carrier concentration in the drift region as shown in P N
Equation 1.35. The space charge generation current (IG) is
the current that results from the charge transport
mechanisms within the space charge region. The space
charge region is the region that develops at the transition space
charge region
region between p–type and n–type materials. Under the or drift region
ND – NA
conditions, of equilibrium described in Figure 21,
hole–electron pairs continuously form in the space charge –Lp
region as a result of thermal agitation.
LN
However, the hole and electron forming a pair soon
recombine. The period of time during which the charge
electron–hole pair exists is referred to as the minority carrier distribution
lifetime. When a reverse bias is placed across the pn E(x)
junction, the space charge region expands from the –Lp LN
transition region into portions of the p and n materials on
X
both sides of the junction. At the same time a larger field
develops across the junction. The creation of this field, in electric field
turn, attracts mobile electrons and holes being generated in Emax
the space charge region and sweeps them into the p and n V(x)
materials before they can recombine. This current is referred
to as the space charge generation current IG. –Lp
Vo
The lifetime reduction current (Iτ) is due to the influence LN
of platinum or bold when introduced into the silicon crystal contact potential
to enhance switching speed. The surface leakage current (IS)
is due to leakage paths on the surface of the semiconductor Figure 21. Property of pn Junction at Equilibrium
Showing the Space Charge and Transition Region
or charge influence in the insulation used to provide junction

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Rectifier Applications

Breakdown Voltage Substitute 1.45 into 1.40:

Ǹ
Both Schottky and Ultrafast rectifiers exhibit avalanche
breakdown. Avalanche breakdown is a process in which a 2qN
D
single charge carrier ionizes an atom within the crystal E max + Ť VB * VA Ť
 
S 0
lattice under the influence, of a strong electric field. Each
electron and ion formed as a result of the ionization process When the maximum field exceeds a critical field for
is itself accelerated by the electric field through the space silicon, then avalanche breakdown occurs.
charge region. This acceleration imparts sufficient energy
for the electron or ion to ionize other atoms it may impact Capacitance
and thereby create additional electrons and ions. The result Under reverse bias conditions both Schottky and p+n–n+
of this rapid increase in reverse current is called avalanche junctions exhibit a voltage–dependent capacitance
breakdown. relationship. This relationship is expressed as capacitance
For a step junction p+n–n+ structure, Poisson’s equation per unit area;
relates the electric field E to the charge density P in the
depletion layer:
C+ Ǹ   qN
S 0 D
2|V ) V |
B A
(1.46)
dE( ) P( )
+  (1.40)
d( ) S 0
Capacitance is significant in Schottky rectifier
where: applications at high frequency.
εS = is the semiconductor dielectric constant and ε0 is the Capacitance is a function of bulk concentration, area of
permittivity of free space. junction and barrier height As the barrier height is lowered,
For a step junction where one side is heavily doped the the capacitance of a Schottky increases. As the active area
electrical properties are determined by the characteristics of of the Schottky junction is increased, the capacitance.
the lighter doped side. In p+n–n+ step junction, the maximum increases. As the concentration of the bulk region is.
field can be found by integrating from the depletion edge to decreased; the capacitance is decreased.
χd the junction.

ŕ–χ
0
qN D qN D d 5000
E max +  S 0 d( ) +  S 0 (1.41)
C, CAPACITANCE (pF)

d 100 KMz >1 >1.0 MMz


qND
E + * dv + (1.42) 3000
Max
d S0
Integrating once the potential difference across this
2000 Typ
one–sided step junction gives:
*qND
V+ (1.43)
2S0 d
1000

d + Ǹ2qNSD0 |V| (1.44) 700


0.5 1.0 2.0 3.0 5.0 7.0 10 20 30 50
Vr, REVERSE VOLTAGE (VOLTS)

d + Ǹ2qNSD0 ŤVB * VAŤ (1.45) Figure 22. Capacitance Versus Reverse Voltage For
Schottky Rectifier

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Rectifier Applications

Dynamic Switching The reverse recovery of a p+n n+ rectifier is. an even more
In general, Schottky technology offers switching serious drawback than the forward recovery characteristic.
performance because Schottky is a majority carrier Reverse recovery time is the time required for injected
technology. In fact, switching both forward and reverse minority carriers to be removed from the space charge
directions are major drawbacks of p+n n+ technology. For region when the device is “turning off.”’ The reverse
example, when a p+n+n+ rectifier is switched from reverse recovery time. Which if we assume the reverse recovery
blocking to on–conduction as shown in Figure 23, its characteristics are approximated to a triangle of base trr and
forward voltage drop exceeds its steady–state forward height Irrm peak reverse recovery current, then the reverse
voltage drop. This phenomenon is called forward voltage recovery charge Qrr can be calculated to be:
overshoot during the turn–on transport. This is due to the
Qrr + 2Irrm @ trr coulombs (1.47)
fact that during Ugh–speed switching from the off–state to
the on–state, current through the rectifier is limited by the Figure 24 shows the reverse, recovery characteristic of
maximum rate at which minority carriers are injected into four power rectifier technologies.
the junction. A high voltage drop therefore develops across The abrupt and soft recovery technologies of Figure 24 are
the diode for a short period of time until minority carriers traditional p+n+n+ diodes with lifetime control for improved
diffuse into the junction and reduce the drift region switching. However, when the switching frequency of
resistance. This process was explained in an earlier section power circuits increases, the turn–off di/dt also increases.
as conductivity modulation. The time it rakes for the diode This causes an increase in both the peak current Irrm, and the
to recover to within 10% of its steady–state forward resulting reverse recovery di/dt; this causes higher losses
conduction voltage is called the forward recovery time. and more noise in the circuit.

Vf

trr

Figure 23. Forward Recovery Characteristics of p+nn+ Diode When Switched From
Reverse Blocking to On Conduction

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Rectifier Applications

GaAs Schottky

Megahertz

GaAs SCHOTTKY
MEGAHERTZ BIPOLAR DIODE
SOFT RECOVERY P–N DIODE
ABRUPT RECOVERY P–N DIODE

Figure 24. Reverse Recovery Characteristics

Rectifiers such as the Megahertz technology or the negative temperature coefficient is observed.
GaAs Schottky technology offer reduced trr and Qrr. features From Figures 27 and 28 one can see that the gallium
and allow circuit operations at high frequency. Figure 25 arsenide technology is essentially thermally stable since
shows the potential for Megahertz and GaAs Schottky losses did not increase with temperature. whereas losses,
rectifiers as enabling technologies for high–frequency although reduced, did increase with the Megahertz device
applications. over the 100C, temperature excursion and a significant
Figure 26 shows the forward current relationship of two increase was exhibited by the Ultrafast rectifier.
Schottky rectifiers at 25C and 150C. The phenomenon of

iF
(Amps)

Ultrafast

Megahertz

GaAs

Frequency
100kHz 1MHz 10MHz

Figure 25. Safe Switching Area Curve for Ultrafast, Megahertz and Gallium Arsenide Schottky Power Rectifiers

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Rectifier Applications
30

20

iF (amps)
Vf @ 150°C pt1
Vf @ 25°C pt1
10 Vf @ 150°C pt2
Vf @ 25°C pt2

0
0 200 400 600 800 1000
Vf (mV)

Figure 26. Forward Current Relationship of Two Schottky Rectifiers at 255C and 1505C
(the phenomenon of negative temperature coefficient is observed)

I = 1A/div
25°C

GaAs Mem C
Vr = 100V GaAs
20 ns .1V

iF = 5A Mem D MegaHz
20 ns .1V

Tcase = + 25°C Megahertz


Ultrafast
Ultrafast

GaAs/MURH840
Chan 1
20 ns .1V
MUR3040

Figure 27. The Reverse Characteristic of Ultrafast, Megahertz and GaAs at TA = 255C.
All Devices Exposed to the Same Test Conditions.

I = 1A/div
25° C

Mem C GaAs
Vr = 100V GaAs 20 ns .1V
Mem D
iF = 5A 20 ns .1V MegaHz

Tcase = + 25°C
Megahertz
Ultrafast
Ultrafast
GaAs/MURH840
Chan 1
20 ns .1V
MUR3040

Figure 28. The Reverse Recovery Characteristic of Ultrafast, Megahertz and GaAs at TA = 1255C.
All Devices Exposed to the Same Test Conditions.

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Rectifier Applications

Silicon Temperature Coefficient Formula for 4.5


Forward Voltage 4.0

Temperature Coefficient (mW/°C)


3.5
When current is held constant, changes in forward voltage
3.0
as a result of changes in junction temperature may be found 2.5
from 2.0
Vf (Tj) + Vf (25°) )  (Tj * 25°) (1.48) 1.5
1.0
Typical Range
where 0.5
Vf(Tj) = forward voltage at Tj 0
–0.5
Vf(25) = forward voltage 25C
–1.0
φSi = temperature coefficient for silicon –1.5
Tj = junction temperature –2.0
–2.5
0.001 0.005 0.01 0.05 0.1 0.5 1.0 5.0 10 50
Instantaneous Forward Current (Amp)
Figure 29. jsi of Forward Voltage for a Family of
Si Diodes

Design Tradeoffs

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Table 3. Effects of Physical Change on Electrical Characteristics

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ Electrical Parameter Change

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁ
Physical Change
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Increase Decrease

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Increase Resistivity (Epi) Vf BV tfr CT Ir trr

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Area CT trr Ir tfr Vf

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Thickness(Epi) tfr Vf Bv CT trr

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Barrier Height
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Lifetime
Vf
trr V
CT Ir

tlr – Forward Recovery trr – Reverse Recovery BV – Breakdown Voltage


CT – Capacitance Transient Vf – Forward Voltage Ir – Reverse Leakage

Conclusion At ON Semiconductor we have accepted the challenge


Power rectifiers are essential components in the power from our customers to provide enabling power rectifiers and
electronics industry. As power rectifiers are improved in continue to strive towards the ideal device.
terms of conduction and switching performance they
become enabling technologies for power conversion References
systems. 1. J.G. Irvin, Resistivity of Bulk Silicon and of
ON Semiconductor has established a technological Diffused Layers in Silicon, Bell System Tech J.
strength, experience and skill resulting in functionally Vol. 41, p. 387, 1962.
valuable products for our customers. This introductory 2. S.M. Sze and J.C. Irvin, Resistivity, Mobility and
chapter combines theory with description of real rectifier Impurity Levels in GaAs, Ge and Si at 300_K,
performance for both existing and emerging rectifier Solid State Electronics, 11; 599 (1968).
technologies. 3. Sze, Physics of Semiconductors. page 364–368.

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Rectifier Applications

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Rectifier Applications

Chapter 2

Basic Thermal Properties of Semicondutors

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Rectifier Applications

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Rectifier Applications


  
  
 
Three basic processes play a part in the removal of heat point, the symbols in Equation 2.1 have subscripts. Thus
from the rectifier junction to the ambient air: (1) conduction R
JC signifies thermal resistance, junction–to–case. While
(heat traveling through a material); (2) convection (heat R
JL signifies thermal resistance, junction–to–lead. The
transfer by physical motion of a fluid); and (3) radiation corresponding temperatures are denoted ∆TJC and TJL,
(heat transfer by electromagnetic wave propagation). Heat respectively.
flows by conduction from the die to the package mounting
surface in stud–, base–, or surface–mount pads, but it flows Thermal Models
from the die through the leads to the mounting terminals in Thermal resistance may be used to form electrical models
a lead–mounted part For case–mounted parts, convection which permit calculation of the temperature rise at various
and radiation are of primary importance in the design of the points in a system. Similar to an electrical physical
heat exchanger, which is covered in Chapter 13. For resistance, thermal resistance is not constant; changes in
lead–mounted parts, radiation and convection from the body mounting, temperature, or power levels will cause some
both play a role in removing heat from the die and are modification of values. Nevertheless, the concept provides
discussed later in this chapter. Transient thermal a very valuable tool in handling thermal problems.
considerations and thermal runaway are often important By use of a thermal model, complex thermal systems may
design factors and receive treatment near the end of this be easily analyzed using electrical network theorems. The
chapter. following sections discuss models for single chip case– and
In order to simplify the analysis of heat flow, the concept lead–mounted parts and for multiple chip assemblies.
of thermal resistance is used. Just as a material offers
resistance to the flow of current, it may be thought of as Case–Mounted Rectifiers
offering resistance to the flow of heat. Resistance to heat The total thermal resistance, junction–to–ease, is
flow is called thermal resistance and for steady–state composed of three identifiable thermal resistances, as
conditions is given as: shown in Figure 30. The die–bond thermal resistance is
usually the largest value. Actual values are determined by
R
+ TńP (2.1a) the design of the device: the size of the chip, the type of the
die bond, and the type and material of the package.
or Variations among parts from a given product line are the
T + R
P (2.1b) result of variations in the die–bond thermal resistance which
is affected by the type of solder or bonding material used. As
where: a general guide, however, thermal resistance as a function of
R
= the thermal resistance in C/W the die area for various common diode packages using solder
T = the temperature difference between points in C die bonds behaves as shown in Figure 31.
P = the power in watts. Some parts may have a piece of material inserted between
Junction temperature of semiconductors must be held the die and the package to take up stresses developed by
below the rating assigned to the part The junction is differing thermal coefficients of expansion of the package
therefore commonly used for one of the reference points in and of the die. This technique allows a hard solder die attach
applying Equation 2.1. The other reference point is the case technique to be used, which improves temperature cycling
for semiconductors enclosed in case–mounted packages or behavior Other parts may contain insulators that electrically
a specified point on a lead for semiconductors enclosed in a isolate the chip from the package. These materials add
package intended for PCB insertion To denote the reference another component of thermal resistance to the assembly.

Junction Junction

Direction of Heat Flow Die

Die Bond
Die Bond

Package
Package Header

Figure 30. Thermal Resistance Components of the Junction–to–Case Thermal Resistance

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Rectifier Applications

neglected. Examples of parts in which this simplified


RθJC, Junction–to–Case Thermal Resistance (°C/W)
approach is satisfactory are the MR750 series. Thermal
4.0 resistance as a function of lead length is shown in Figure 32.
Note that the thermal resistance is linearly proportional to
3.0
lead length, indicating that the package heat transfer
DO–4
components play a negligible role in the total thermal
2.0
resistance. If the package thermal resistance components
1.5 were not negligible, the lines would curve as the lead length
DO–5
increased.
Pressfit
1.0 Data is often given for the case where both leads have
0.8 identical lengths. However, identical lead lengths will not
result in lowest thermal resistance to the mounting points
0.6 since the net thermal resistance is composed of two parallel
paths. The lowest net value will always occur when one of
0.4 the paths is made as short as possible. For example, suppose
5.0k 7.0k 10k 15k 20k 30k 40k 50k a mounting situation is encountered where the leads must
Die Area (Square Mils) take up a 1 inch span. If each lead were 1/2 inch long, the
Figure 31. Typical thermal resistance of common thermal resistance (from Figure 32) is l3C/W maximum.
rectifier packages having copper material in the heat However, the device could be mounted with one lead 1/8
flow path (data averaged from measurements at ON) inch long and the other 7/8 inch long. The thermal resistance
from junction to the end of each lead is 4C/W for the 1/8
Thermal resistance (Rθ) follows the same general inch lead and 23C/W for the 7/8 inch lead. The net thermal
equation as does electrical resistance: resistance of the parallel combination is 3.4C/W. The
reduction from 13C/W is quite significant but to take
R
+ l (2.2) advantage of this reduction the mounting terminal must have
A
a low thermal resistance to the ambient As the span becomes
where:
less, the advantages of asymmetrical mounting become less
ρ = thermal resistivity
significant.
l = length of thermal path
A = area of thermal path
The equation states that thermal resistance is inversely
RθJL, Thermal Resistance, Junction–to–Lead (°C/W)

proportional to area; however, the data of Figure 31 does not


indicate this relationship exactly. The deviation is caused 40
because the area of heat flow through the package is not the
35 Single Lead Heat Sink,
same as the die area. As heat flows, it spreads out toward the Insignificant Heat Flow
edges of the package; consequently, as larger die are placed 30 Through Other Lead
in a given package, the area for spreading reduces
25
proportionally. Typical
20
Lead–Mounted Parts Maximum
In the axial lead–mounted rectifier, heat travels down both 15
leads to some kind of a heat dissipator, which is usually 10 Both Leads to Heat
nothing more than a printed–circuit wiring pattern. Heat is Sink, Equal Length
also removed from the package by convection and radiation, 5
which make the thermal circuit model immensely more 0
complicated for a lead–mounted part than for a 0 1/8 1/4 3/8 1/2 5/8 3/4 7/8 1
case–mounted part. However, certain lead–mounted parts Lead Length (Inches)
are easily handled because the thermal resistance of both
leads is identical and quite low compared to the package Figure 32. Thermal Resistance as a Function of Lead
Length for MR751 Series Axial–Lead Rectifiers
radiation and convection components which maybe

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Rectifier Applications

As a design guide, when using lead–mounted pans, Parts with asymmetrical lead conduction and/or
Figure 33 shows typical data for three popular case types. significant convection and radiation from the case requite
The data should not be taken as absolute because use of a complete thermal model. Figure 34 shows a
junction–to–ambient thermal resistance cannot be regarded
satisfactory approximation.
as a design constant. The factors involved are discussed in
depth in Chapter 13.

L L

ÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉ
MOUNTING METHOD 1
P.C. Board Where Available LEAD LENGTH L
Copper Surface area is small CASE # MOUNTING
METHOD 1/8I 1/4I 1/2I 3/4I

1 65 72 82 92

ÉÉÉÉÉÉÉÉÉ
59
L L (DO 41)
(DO–41) 2 74 81 91 101

ÉÉÉÉÉÉÉÉÉ
MOUNTING METHOD 2
3

1
40°C/W (L = 3/8, A = 2.25 2)

– 55 – 58

ÉÉ
Vector Push–In Terminals T–28 2 – 65 – 68
60
3 25°C/W (L = 5/8, A = 6.252)

ÉÉ
L = 1/2”
1 50 51 53 55

267 2 58 59 61 63

ÉÉ Board Ground Plane


3 28°C/W (L = 1/2, A = 6.252)

MOUNTING METHOD 3 Data shown for the mountings shown is to be used as typical
P.C. Board with guideline values for preliminary engineering or in case the tie point
Copper Surface of Area A temperature cannot be measured.

Figure 33. Typical Values for RqJA in Still Air

RθCA

RθLA RθJAL RθJC 70°C/W


40°C/W/in 25°C/W 2°C/W/in

RθCL RθLK RθSK


0.5°C/W 40°C/W/in
TAA TLA TJ PD TAK TA

Use of the above model permits calculation of average junction temperature for any mounting situation.
Lowest values of thermal resistance will occur when the cathode lead is brought as close as possible to a
heat dissipator, as heat conduction through the anode lead is small. Terms in the model are defined as follows:
TEMPERATURES THERMAL RESISTANCES
TA = Ambient RθCA = Case to Ambient
TAA = Anode Heat Sink Ambient RθSA = Anode Lead Heat Sink to Ambient
TAK = Cathode Heat Sink Ambient RθSK = Cathode Lead Heat Sink to Ambient
TLA = Anode Lead RθLA = Anode Lead
TLK = Cathode Lead RθLK = Cathode Lead
TJ = Junction RθCL = Case to Cathode Lead
RθJC = Junction to Case*
RθJAL = Junction to Anode Lead (S bend)
*Case temperature reference is at cathode end.

Figure 34. Approximate Thermal Circuit Model for a Case 60 Part

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Rectifier Applications

Use of the thermal model of Figure 34 to calculate Thus, the effective thermal resistance, junction–to–ambient,
junction temperature is illustrated by the following is (117–60)/2 = 28.5C/W; however, the number is not
example: especially meaningful because the tempera–tufts of the
Cathode Lead Length + 1ń4 inch TA + 60°C ambient and the printed board wiring are not the same.
Anode Lead Length + 1ń2 inch TAA + 70°C The concept of a single thermal resistance number to
R
SA + R
SK + 40°CńW (typical describe the thermal properties of axial–lead parts must be
for printed board wiring) used with caution, because the ambient temperature is
TAK + 80°C generally not the same as the temperature of the points which
serve as a heat sink for the leads. Furthermore, in the case of
From the data in the figure, calculate: an asymmetrically mounted part, there is little likelihood
R
LA + 40 x 1ń2 + 20°CńW, that either mounting point would be at the same temperature
R
LK + 40 x 1ń4 + 10°CńW. because more heat flows out through the low resistance lead.
The model of Figure 34 may be successively simplified by Thus, thermal resistance of a lead–mounted diode in terms
using Thevenin’s network theorem as illustrated by of a single value is only useful when all the reference
Figure 35. The resulting junction temperature is 117C. temperature points involved have the same temperature.

85°C/W 2°C/W

70°C 2W 50°C/W 70°C/W


TJ

80°C 60°C

(a)

85°C/W 2°C/W 29°C/W

240° TJ 71.6°C

(b)

Figure 35. Successive steps in the solution of the example in the text. Thermal problems may be solved by
applications of network theorems. (a) Model with example numbers inserted;
(b) Simplified thermal circuit obtained by applying Thevenin’s Theorem to each side of the model

Multiple Chip Devices Since the model is so complex, it is easier to work in terms
Assemblies having more than one die per package – for of a coupling factor. The general equation for thermally
example full–wave, bridge, or three–phase coupled die can be written as follows:
configurations–have a considerably more complicated
TJ1 + R
1PD1 ) R
2K
2PD2 )
thermal situation because of thermal coupling between the
R
3K
3PD3 ) @ @ @ R
nK
nPDn (2.3)
die. To appreciate how the coupling problem can be handled,
consider the thermal model of Figure 36. Coupling is
represented by the resistances connecting all the die where:
together. The coupling between adjacent die is primarily a ∆TJ1 = the rise in junction temperature of diode 1 with
result of heat transfer through the lead frame, but the respect to the reference temperature
surrounding encapsulate is also a thermal conductor. In Rθn = the thermal resistance of diodes 1 through n
addition, each die is also coupled to the diametrically PDn = the power dissipated in diodes 1 through n
opposite one through the molding in the center of the Kθn = the thermal coupling between diode 1 and
assembly. The center coupling requires the addition of two diodes 2–4
other resistance paths. n = the die of interest

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36
Rectifier Applications

Thermal
Resistances
P1 P2 P3 P4

Die Bond

Adjacent Die
Coupling
D1
Additional
Opposite
D4 D2 Die Coupling
Lead Frame
and Case
D3 Material

Case

Figure 36. Sketch of Physical Construction and Thermal Model for a Bridge Assembly

Assuming equal thermal resistance for each die, Equation This value is the one specified on the data sheet as the
2.3 simplifies to effective bridge thermal resistance, junction–to–case.
TJ1 + R
1(PD1 ) K
2PD2 ) K
3PD3 ) Satisfactory average, steady–state temperature calculations
@ @ @ K
nPDn) (2.4) may be made by multiplying Rθ(eff), by the total power
For the condition where PD1 = PD2 = PD3 = PDn, the total dissipated in the package under a given load condition,
dissipation PDT = n PD1. provided the current in each diode is identical in wave–shape
For this special case, Equation 2.4 can be further and amplitude.
simplified to The coupling factor is particularly valuable when a bridge
TJ1 + R
1(1 ) K
2 ) @ @ @ K
n) PDTńn (2.5)
assembly is operated in the split load circuit of Figure 37(b)
instead of the more usual bridge circuit of Figure 37(a.) The
An effective package thermal resistance can be defined as
following example illustrates the use of the data.
follows:
Assume that the previous assembly is used in the circuit
R
(eff) + TJ1ńPDT (2.6) of Figure 37(b) and operates such that
Combining Equations 2.5 and 2.6 yields:
PD1 + PD2 + 10 W
R
(eff) + R
1 (1 ) K
2 ) K
3 ) @ @ @ K
n)ńn (2.7)
PD3 + PD4 + 5 W
Assume an assembly has a thermal coupling coefficient
between opposite dice of 0.12 and between adjacent dice of
0.20. If the individual die has a thermal resistance of Maximum temperature rise occurs in diodes 1 and 2. Using
6.0C/W, the effective bridge thermal resistance may be Equation 2.4 and substituting values:
calculated from Equation 2.7 as
R
(eff) + 6.0(1 ) 0.20 ) 0.120 ) 0.20) ń4 TJ1 + 6.0 [10 ) (0.02)(10) ) (0.12)(5)
+ 2.28°CńW ) (0.12)(5)] + 79.2

D D
4 1 I
A

D D D D Load 1
4 1 3 2
I
A

+
D D
3 2 Load Load 2
I I
B B

(a) (b)

Figure 37. Basic Circuit Uses for Bridge Rectifiers (a) Standard Circuit; (b) Split Load Circuit

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37
Rectifier Applications

Transient Response of where:


Semiconductors r(t) = fraction of steady state value at a given time
Each component of thermal resistance in a semiconductor RθJR = thermal resistance, junction to a reference point
also has a thermal capacitance associated with it, related to Choice of reference point depends on the type of part. For
the mass of the material. A high capacitance is desirable in case–mounted parts, the logical reference is the case. For
order to improve the transient and overload capability of the lead–mounted parts the leads are generally chosen;
part since it slows the response to a power pulse. however, the ambient ins sometimes used.
A mathematical analysis of one–dimensional heat flow
indicates that the thermal response follows the relationship
Thermal Response
TJ T Ǹt . However, the various time constants associated Thermal response of lead–mounted semiconductors is
with a semiconductor affixed to a package, and the fact that difficult to present because of the effect of lead length.
heat flow is not usually one–dimensional, make the response Figure 38 shows the thermal response of two lead–mounted
extremely difficult to calculate. The most practical method parts. In general, the slope, between 10 and 100 ms, as on
of handling the transient thermal problem is to measure the Figure 38(b), is followed until steady–state conditions are
thermal response of the semiconductor to a step of input approached. Figure 38(b) shows transient thermal
power and to present the data in a graph. The thermal impedance, ZθJL(t). Where the effects of lead length are
resistance as a function of time is called transient thermal considered. Curves for other lead lengths can be sketched
impedance and may he calculated by: using the given curves as a guide and flattening the curve at
Z
JR(t) + r(t) R
JR (2.8) the appropriate value of steady–state thermal resistance.

1.0
0.7
r (t), Transient Thermal Impedance

0.5 Lead Length = 1/4 ”


0.3
0.2
(Normalized)

0.1
0.07
0.05
0.03
0.02

0.01
0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 2000 5000 10k 20k 50k
(a) t, Time (ms)
RθJL(t), Junction–to–Lead Transient Thermal

100
70
50

30
ÉÉ
ÉÉ
L

Heat Sink
ÉÉ
L

ÉÉ
L = 1”
L = 3/8 ”
Impedance (°C/W)

20 L = 1/32”

10
7.0
5.0
3.0
2.0

1.0
3.0 5.0 10 20 30 50 100 200 300 500 1000 2000 5000 10k 20k 30k
(b) t, Time (ms)

Figure 38. Typical Thermal Response of Lead–Mounted Rectifiers


(a) Case 59 with Fast Recovery Diode, Plotted Normalized;
(b) Case 59 with Standard Diode, Plotted in Terms of 5C/W

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38
Rectifier Applications

Figure 39 shows response curves for typical power temperature changes of other die to become manifest at one
rectifiers in stud–mount and press fit cases. Differences in of the other die in the same package. As a result, transient
dies and manufacturing techniques make it difficult to coupling can be neglected because of the relatively high
quantitatively explain behavior, although it is evident that frequencies employed in electronic work.
the more massive packages and larger die have slower When rectifiers are used in intermittent operation the
responses. thermal response of the heat sink may be used to advantage.
Measurements of various rectifier diode arrays have Heat sink properties are discussed in Chapter 13.
revealed that times well ever 10 seconds are required for

1.0
r (t), Effective Transient Impedance

0.5
0.3
0.2
(Normalized)

0.1

0.05

0.03
0.02

0.01
0.001 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 5.0k 10k
(a) t, Time (ms)
1.0
r (t), Effective Transient Impedance

0.5
0.3
(Normalized)

0.2

0.1

0.05

0.03
0.02

0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k
(b) t, Time (ms)
1.0
r (t), Effective Transient Impedance

0.5
0.3
0.2
(Normalized)

0.1

0.05

0.03
0.02

0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k
(c) t, Time (ms)

Figure 39. Typical Thermal Response of Stud–Mounted and Press–fit Rectifiers (a) DO–4 Package;
(b) DO–5 Package; (c) DO–21 Package

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Rectifier Applications

Use of Thermal Response Data The application of the superposition principle is easily
A simple equation to permit calculation of temperature for seen by studying Figure 40. Part (a) illustrates the applied
arbitrary pulse trains with random variations is impossible power pulses. Part (b) shows these pulses transformed into
to derive. However, since the heating and cooling response pulses lasting from time of application arid extending to
of a semiconductor is essentially the same, the superposition infinity; at t0, P1 starts and extends to infinity; at t1, a pulse
principle may be used to solve problems which otherwise (–P1) is considered to be present and thereby cancels P1 from
defy solution. Using the principle of superposition, each time t1, and so forth with the other pulses. The junction
power interval is considered positive in value and each temperature changes, due to these imagined positive and
cooling interval negative, lasting from time of application to negative pulses., are shown in part (c). The actual junction
infinity. By multiplying the thermal resistance at a particular temperature is the algebraic sum as shown in part (d).
time by the magnitude of the power pulse applied, the Problems may be solved by applying the superposition
magnitude of the junction temperature change at a particular principle exactly as described; the technique is referred to as
time is obtained. The net junction temperature is the the pulse–by–pulse method. It yields satisfactory results
algebraic sum of the terms. when the total time of interest is much less than the time
required to achieve steady–state conditions. This method
must be used when an uncertainty exists in a random pulse
train as to which pulse will cause the highest temperature.

Pin
P2

P1
P4
P3
(a)
t0 t1 t2 t3 t4 t5 t6 t7 Time
Pin
P2
P1

P4
P3
(b)
–P3 Time
–P4
–P1

–P2

(c)
Time

TJ

(d)
Time

Figure 40. Application of Superposition Principle (a) Input Power;


(b) Power Pulses Separated into Components;
(c) TJ Change Caused by Components; (d) Composite TJ

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Rectifier Applications

Where power surges or overloads occur with uniform and 71%. respectively, of the peak and the width
trains of repetitive pulses, more accurate answers with less adjusted to 70% of the baseline width (as shown in
work are obtained by using a model based on averaging the Figure 42(b)). A power pulse having a sin2 shape
power pulses. The basis of this method is shown in models as a triangular waveform.
Figure 41. The average power pulse is followed by one pulse Rectifier diode forward power pulses are a combination of
of the repetitive train and then the overload pulse. The sin and sin2 waveforms if the current is a sinewave. In
temperature is calculated at the end of the surge or overload. general, suitable mudding results if the amplitude waveform
factor, FA, is about 0.91 when the peak current is low and
POV 0.71 when the peak current is high, that is, when the voltage
n th
pulse
drop across the forward resistance (RF) is significant. (At
PO low levels, diode voltage is fairly constant over the forward
current cycle yielding a sine wave power waveform, while
Pavg at high power levels the diode voltage is more nearly
proportional to the instantaneous value of current resulting
in a power waveform closer to a sin2 function. See
t t
Chapter 4.)

Rectifiers used with SCRs in phase control circuits must
handle the current waveforms of part (c) of Figure 42.
Empirically developed modeling rules for SCR power
Figure 41. Model for a Repetitive Equal Pulse Train
Having an Overload Condition
losses are indicated; the rules are slightly more conservative
when used with rectifiers than with SCRs.
Handling Nonrectangular Pulses Power pulses having more complex waveforms are
Thermal response curves, such as those shown in modeled by using two or more pulses as shown in
Figure 38 and 39, are based on a step change of power; the Figure 42(d).
response will not be the same for other waveforms. Thus far Note: A point to remember is that a high–amplitude pulse
in this treatment a rectangular–shaped pulse has been of a given amount of energy will produce a higher rise in
assumed. It would be desirable to be able to obtain the junction temperature than will a lower amplitude pulse of
response for any arbitrary waveform, but the mathematical longer duration having the same energy
solution is extremely unwieldy. The simplest approach is to The general equation for modeling is:
make a suitable equivalent rectangular model of the actual P T
TM + (AV) W (2.9)
power pulse and to use the given thermal response curves; FAP(PK)
the primary rule to observe is that the energy of the actual
power pulse and the model are equal. where: TM = pulse width of model
Experience with various modeling techniques has lead to PAV = average power in the original waveform
the following guidelines: TW = time duration of original waveform
1. For a pulse that is nearly rectangular, a waveform
(P(AV) TW = Area under the power
having an amplitude equal to the peak of the actual
waveform)
pulse, with the width adjusted so the energies are
equal, is a conservative model (see Figure 42(a)). FA = amplitude waveform factor previously
2. Sine wave and triangular power pulses model well discussed
with the amplitude reduced by a factor. FA, of 91% P(PK) = peak power of original waveform

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41
ÉÉÉÉÉÉ
Rectifier Applications

ÉÉÉÉÉÉ
P1

ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
P1 T1 = A
A

ÉÉÉÉÉÉ
(a)

T1

P(PK) P(PK)

0.91 P(PK) 0.71 P(PK)


0.7 TW
0.7 TW
(b)

TW TW

0.85 P(PK)
0.75 P(PK)

0.7 P(PK)

22° 44° 67°


30° 60°
90°
(c)

0.98 P(PK) 0.95 P(PK) 0.91 P(PK)

88° 113° 126°

120° 150° 180°

ÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉ P1 (t1 –t0) + P2 (t2 – t1) = A

ÉÉÉÉÉÉÉÉÉÉÉ
P1

ÉÉÉÉÉÉÉÉÉÉÉ
P2

(d) ÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉ
A

t0 t1 t2

Figure 42. Models for Frequently Encountered Power Pulses


(a) Model for Nearly Rectangular Waveform; (b) Models for Sine Wave and Triangular Pulses;
(c) Models of SCR Current Waveforms for Various Conduction Angles (m). Pulses for m >1205 are centered with
respect to the sine wave. Pulses for m > 905 start at the leading edge;
(d) Model for a Complex Waveform

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Rectifier Applications

Example Peak Temperature Calculations PROCEDURE:


The following examples illustrate proper analysis Find r(tn – tk) for preceding time intervals from
procedures for commonly encountered circuit applications. Figure 31a; then substitute into the set of Equations 2.10.
The first one is for a train of randomly spaced square pulses,
and the second is for a single–phase circuit subjected to an
overload. The second example requires use of proper power T1 + P1 r(t1) R
JL + (80)(0.02) 31 [ 50°C
pulse modeling techniques to obtain a solution.
T2 + [P1 r(t3) * P1 r(t3 * t1) ) P2 r(t3 * t2)] R
JL
EXAMPLE 1
+ [80 (0.058) * 80 (0.056) ) 40 (0.054)] 31
Finding TJ at the end of the nth pulse in a train of unequal
amplitude, spacing, and duration: + [4.64 * 4.48 ) 2.16] 31 + 4.96 ) 66.96 + 72°C

General Equation:
T3 + [P1 r(t5) * P1 r(t5 * t1) ) P2 r(t5 * t2)
n
* P2 r(t5 * t3) ) P3 r(t5 * t4)] R
JL
Tn + Pi[r(t2n*1 * t2i*2) * r(t2n*1 * t2i*1)]R
JC
i=1 + [80 (0.074) * 80 (0.073) ) 40 (0.072)
(2.10) * 40 (0.066) ) 60 (0.027)] 31
where n is the number of pulses and Pi is the peak value of + [(5.91 * 5.83) ) (2.88 * 2.64) ) (1.62)] 31
the ith pulse. + 2.48 ) 7.44 ) 50.22 + 60.14°C
To find temperature at the end of each of the three pulses
shown in Figure 43, Equation 2.10 becomes:
T1 + P1 r(t1) R
JC (2.10a) The calculations above are performed so that, preceding
the final answer, the residual temperature caused by the
T2 + [P1 r(t3) * P1 r(t3 * t1) ) P2r(t3 * t2)] preceding pulses is evident. Note that very little residual
R
JC (2.10b) temperature is left from the first pulse at the end of the
second and third pulses. Also note that the second pulse gave
T3 + [P1 r(t5) * P1 r(t5 * t1) ) P2r(t5 * t2)
the highest value of junction temperature, a fact not so
* P2r(t5 * t3) ) P3r(t5 * t4)] R
JC (2.10c)
obvious from inspection of Figure 43. Because of the high
temperature caused by the second pulse, significant residual
Assume the following pulse conditions are applied to a temperature from the second pulse was present at the end of
rectifier with a transient thermal response as shown in the third pulse.
Figure 38(a) and RθJL = 31C/W for a lead length of 1/4
inch.
P1 = 80 W t0 = 0 t3 = 1.3 ms
EXAMPLE 2
P2 = 40 W t1 = 0.1 ms t4 = 3.3 ms
Find TJ at the end of an overload condition in a train of
P3 = 70 W t2 = 0.3 ms t5 = 3.5 ms
pulses of equal amplitude, spacing, and duration.
Therefore:
The overload–current condition shown in Figure 44 is
t1 – t0 = 0.1 ms t3 – t1 = 1.2 ms
applied to the rectifier used in the previous example and is
t2 – t1 = 0.2 ms t5 – t1 = 3.4 ms
t3 – t2 = 1 ms t5 – t2 = 3.2 ms modeled as shown in Figure 45. P1 is the average power
t4 – t3 = 2 ms t5 – t3 = 2.2 ms dissipation before the overload condition, P2 is the average
t5 – t4 = 0.2 ms power dissipation during the overload condition, and P3 is
an equivalent peak power pulse resulting from the last
overload pulse in the overload train. For the average current
P(PK), Peak Power (Watts)

100 of 0.4 A, before the overload condition, and the average


80
P1 current of 2.2 A during the overload, the average power
P3 dissipation can be determined from rectifier power
60
P2 dissipation data. The data shows P1 = 0.4 W and P2 3.0 W
40
for a resistive load. P3 is a peak power and is obtained by
20
noting that an average current of 2.2 A has a peak value of
0 6.9 A (3.14 x 2.2) causing a peak voltage of 1.45 V, obtained
t0 t1 t2 t3 t4 t5
from rectifier VF–IF data. Using the modeling rules, the
0 1.0 2.0 3.0 4.0
equivalent rectangular pulse, P3, using a conservative
t, Time (ms)
waveform factor of 0.91 yields:
Figure 43. Pulse Train Analyzed for Peak
Temperatures in Example 1 Text P3 + (0.91)(6.9)(1.45) + 9.1 W

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Rectifier Applications
Overload Current, IF(AV) = 2.2 A

Forward Current
Forward Current,
IF(AV) = 0.4 A Forward
Current

Figure 44. Overload Current Condition Used in Example 2 to Calculate Peak Junction
Temperature

P3

P2

P1 t5 t6

1 ms

t0 t1 t2 t3
V t4
VR [ m
2
Applied
Voltage

Figure 45. Model of Power Pulses Resulting from the Overload Current Conditions of Figure 44

The time t3 – t2 is found by adjusting the width TM of the Solving,


power pulse P3 for equivalent energy by using Equation 2.9
T3 + [0.4 * 0.4 (0.315) ) 3 (0.315) * 3(0.088)
to obtain
) 9.1 (0.083)] 31 + 1.71 (31) [ 53°C
t3 * t2 + TM + P2TW
P3
T5 + [0.4 * 0.4 (0.317) ) 3(0.317) * 3(0.096)
(3)(16.667) ) 9.1 (0.091) * 9.1 (0.068)] + 1.15 (31) [ 36°C
(t3 * t2) + + 5.5 ms
9.1
Thus, the junction temperature has cooled 17C from time
thus, t3 to time t5. Reverse power dissipation, due to reverse
(t2 * t1) + (t4 * t3) + 8.34 * 5.5 + 2.84 + 1.42 ms voltage and leakage current, has been assumed negligible in
2 2 the above example. If this is not the case, average reverse
t1 + (9)(16.67) + 150 ms t3 * t1 + 6.92 power dissipation is added to pulses P1 and P2; also a peak
reverse power pulse is added between t4 and t5. Equations
t2 + t1 ) (t2 * t1) + 151.42 t5 * t1 + 9.34
2.11a and 2.11b are accordingly modified.
t3 + t2 ) (t3 * t2) + 156.92 t5 * t2 + 7.92
t5 + t3 ) (t4 * t3) ) 1 + 159.34 t5 * t3 + 2.42
The general equations used to calculate the junction
temperature rise above ambient at t3 and t5 are as follows:
T3 + [P1 * P1 r(t3) ) P2 r(t3) * P2 r(t3 * t1)

) P3 r(t3 * t2)] R
JL (2.11a)

T5 + [P1 * P1 r(t5) ) P2 r(t5 * P2 r(t5 * t1)

) P3 r(t5 * t2) * P3 r(t5 * t3)] R


JL (2.11b)

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Rectifier Applications

Thermal Runaway

Heat Generations or Rate of Heat Flow (Watts)


2.0
Rectifier circuits may operate the rectifying diode such
that thermal runaway is liable to occur and result in
destruction of the diode. The problem arises because several 1.6
2
characteristics are a function of temperature. Reverse
recovery, reverse leakage, and usually forward power losses 1.2
increase with temperature. As power is applied, junction B 3
temperature increases, causing power losses to increase. A B1 B2
0.8 P1 1
The additional power causes a further increase in
temperature. Thus, a regenerative process is operating.
P2 C
In any thermal system, the conditions for thermal stability 0.4
are such that as the ambient temperature rises. the system
must be capable of dissipating more heat than is generated.
0
That is, the heat generated in the semiconductor must be less 20 Tn 40 T1 T2 60 80 100
than the thermal conductivity from junction–to–air. T, Temperature (°C)
Mathematically, the conditions for stability are
Figure 46. Graphical Analysis of Thermal Runaway
dPDńdTJ t 1ńR
JA (2.12)
It is now possible to predict the effect of changing the
where dPD/dTJ = change in power dissipation per unit ambient temperature. If the ambient temperature were
change in temperature increased. curve B would be translated to the right, resulting
RθJA = thermal resistance, junction–to–ambient. in a higher junction temperature because the intersection of
A graphical approach [2] may be used to analyze the curve A would be to the right of point 1. If the ambient
problem and illustrate the principles involved. It also temperature increased to 49C (curve B1), the junction
permits visualizing the influence of ambient temperature temperature would be about 85C. At values of ambient
and thermal resistance. Figure 46 shows how this is done; temperature below 49C, for this particular thermal
values are typical of those encountered with Schottky barrier resistance (25C/W), the circuit always fulfills the thermal
power rectifiers, which have a sufficiently high reverse stability criterion, dPD/dTJ<RθJA and is therefore a
leakage current to cause thermal runaway. thermally stable circuit. At an ambient temperature 49C,
Curve A is a plot of the heat generated at the rectifier curve B1 is tangent to curve A at point 2, where dPD/dTJ =
junction versus junction temperature: The ordinate is simply 1/RθJA. Under these conditions the circuit is conditionally
PR(AV) and may be found from IR vs. TJ and VR curves; it is stable, since a small incremental increase in junction
easy to do for dc conditions. The slope of curve A is temperature will cause an unstable condition. A further rise
dPD/dTJ. in the ambient temperature will cause the thermal
Curve B represents the power–dissipation capability (rate conductance curve B1 to fall below the power generation
of heat flow) of the equivalent thermal circuit as a function curve as shown by B2. Under these conditions the
of the junction temperature of the rectifier. The slope can be semiconductor junction temperature cannot stabilize. The
seen to be 1/RθJA, which corresponds to the thermal power generated within the semiconductor continues to
conductivity of the total thermal circuit from junction to increase in search of a stable condition until the junction is
ambient air. destroyed.
With no voltage applied, the unit dissipates no power and From this representation, the effect of changing the
the junction temperature is the same as the ambient. In thermal conductance can be determined. If the cooling
Figure 46, this condition corresponds to the point TA. When facility is changed (for instance, a better heat sink is used),
voltages are applied to the circuit, the heat generated by the the junction will run cooler for a given ambient temperature,
semiconductor (in the form of dissipation) is P1. This since the slope will be increased. Curve B illustrates the
amount of internal heat generation in the semiconductor result. Curve C shows what happens if RθJA is increased to
requires that the junction temperature increase to T1. 40C/W. Note that the maximum ambient temperature
However, since the junction temperature has now been allowed is 29C and that the junction temperature is at 75C
increased, the total power generated by the semiconductor at the point of thermal runaway (point 3).
must increase to P2. In this manner, the junction temperature
and resultant power generation increase until a stable
condition is reached at point 1, where the power–generation
and thermal–conductance curves intersect. The temperature
at point 1 is labeled T2 and may be read from the abscissa as
approximately 48C; the ambient temperature is at the
intersection of curve B with the abscissa, and is 30C for this
example.

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Rectifier Applications

To aid the circuit designer in applying rectifiers having 125


reverse leakage high enough to require that thermal runaway 2.5
3.5

TR, Reference Temperature (°C)


be considered in the design, a simplified approach has been 115 5.0
devised and is presented on applicable ON Semiconductor
7.0
data sheets. It is based on the relationship
105
TA(max) + TJ(max) * R
JA PF(AV)
10
* R
JA PR(AV) (2.13) 15
95
where TA(max) = maximum allowable ambient 20
temperature 30
85
TJ(max) = maximum allowable junction R JA (°C/W) = 50
temperature (rated limit or the
temperature at which thermal runaway 75
4.0 5.0 7.0 10 15 20 30 40
occurs, whichever is lowest)
PF(AV) = average forward power dissipation VR, DC Reverse Voltage (Volts)
PR(AV) = average reverse power dissipation
RθJA = junction–to–ambient thermal Figure 47. Maximum Reference Temperature for a
resistance. Schottky Rectifier
A reference temperature is defined by Equation 2.14:
TR + TJ(max) * R
JA PR(AV) (2.14)
The reference temperature TR may be limited only by EXAMPLE
PR(AV) or may be limited by thermal runaway. TR is obtained Find TA(max) for the diode of Figure 47 operated in a 24 V
by a computer solution of the basic stability criteria DC supply using a bridge circuit with capacitive filter such
boundary given in Equation 2.12 as explained in the that the load current IL(DC) = 10 A (IF(AV) = 5 A),
preceding discussion. TR data is presented on graphs similar IF(PK)/IF(AV) = 0, input voltage = 20 V(rms,) RθJA = 7C/W.
to that of Figure 47. With TR known. TA(max) is found from
Step 1. Find VR(equiv). Read FV = 0.65 from Table 4.
TA(max) + TR * R
JA PF(AV) (2.15)
VR(equiv) = (1.41)(20)(0.65) = 18.3
Equation 2.15 is found by substituting Equation 2.14 into
Equation 2.13. Step 2. Find TR from Figure 47. Read TR = 108C @
Figure 47 shows how TR is limited by both TJ(max)and VR = 18.3 and RθJA = 7C/W
thermal runaway. The transition between these two Step 3. Find PF(AV) from rectifier data. PF(AV) = 10 W at
limitations is evident on the curves of Figure 47 as a IPK/I(AV) = 20 and IF(AV) = 5 A
difference in the rate of change of the slope in the vicinity of
Step 4. Find TA(max) from Equation 2.15.
115C. The data is based upon dc conditions. For use in
TA(max) = 108–(7)(10) = 38C.
common rectifier circuits Table 4 indicates suggested
voltage factors for an equivalent dc voltage to use for
conservative design, i.e. References
1. Bill Roehr and Bryce Shiner, Transient Thermal
VR(equiv) + Vin(PK) FV (2.16) Resistance General Data and Its Use,
The factor FV is derived by considering the properties of ON Semiconductor Application Note AN–569.
the various rectifier circuits and the reverse characteristics ON Semiconductor Products Inc., Phoenix,
of the particular diode. At a fixed junction temperature. the Arizona.
reverse power waveform is determined for various peak 2. Lloyd P. Hunter, et al., Handbook of
reverse voltage levels and average power is calculated. From Semiconductor Electronics, Second Edition,
IR – VR data, the value of VR is found which produces the Chapter 11. pp 11–80, 81. McGraw–Hill Book
same power dissipation as in the circuit; it is VR(equiv). Co., Inc., New York, New York. 1962.

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Table 4. Values for Factor FV

ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Circuit Half Wave Full Wave, Bridge Full Wave, Center Tapped*
Load Resistive Capacitive* Resistive Capacitive Resistive Capacitive

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Sine Wave
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
0.5
ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Square Wave 0.75
1.5
1.5
0.5
0.75
*Note that Vrwm = 2 Vin(PK) *Use line to center tap voltage for Vin.
0.65
0.75
1.0
1.5
1.3
1.5

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Rectifier Applications

Chapter 3

The SPICE Diode Model

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Rectifier Applications

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48
Rectifier Applications

 
 
Special Acknowledgment inherent success of a particular method depends for the most
This chapter was written by Howard T. Russell, Jr., PhD, OPAL part on how well device physics and theory are utilized in the
Engineering, Inc., August 4, 1991
design of the model, and upon the availability of data taken
from a real device.
Introduction
The SPICE Diode Model
This chapter presents a description of the SPICE diode
The parameters for the SPICE model of the diode are
model and methods for the extraction of its parameters. A
given in Table 5 [5, 6]. The equations that use these
comprehensive examination of this model will be given
parameters are divided into four model groups which are
along with comparisons of the characteristics of a real diode
responsible for simulating various diode characteristics.
and those produced by the model. These comparisons will
These groups consists of the large–signal dc model, the
be used to illustrate the model’s accuracy and limitations.
small–signal ac model, temperature and area effects, and the
Based on the nature of the model equations, mathematical
noise model.
methods for the extraction of the SPICE parameters (with
the exception of the noise parameters) will be presented. The Large–Signal DC Model
These methods are easily implemented on a hand–held The large–signal behavior of the SPICE diode is
programmable calculator and will be used to extract the characterized by the relationship between the dc current and
parameters for a ON Semiconductor MURHS4OCT voltage at its terminals. The parameters used to model this
rectifier as an example. Throughout this chapter, references behavior are IS, RS, N, By, and 1EV. The parameter IS is the
are made to the characteristics and behavior of an ideal diode same as the reverse saturation current IS for an ideal diode.
model. The development of this model may be found in The ohmic resistance RS is used to model the resistance of
several of the many well–known texts on the subjects of the metal contacts and the neutral regions under high–level
semiconductor device theory and pn junction diodes [1–4]. injection. The emission coefficient N is used to modify the
The SPICE model of a pn junction diode consists of slope of the current versus voltage (I–V) characteristics
mathematical equations, parameters, and variables, all of curve. Finally, the parameters BV and IBV model the
which are designed to work together to simulate as reverse breakdown behavior.
accurately as possible the electrical characteristics of a real Figure 48 shows the equivalent circuit of the SPICE diode
device. The equations and variables used for the model in the for large–signal dc analysis. This circuit contains an internal
SPICE program are fixed and not easily modified [5, 6]. diode D1, a series resistance having a value of RS, and a
Therefore, the accuracy resulting from a SPICE simulation shunt conductance GMIN. The SPICE program adds this
of a diode depends on the precise extraction of its model conductance, which is transparent to the user, around every
parameters. Fortunately, there are several parameter internal pn junction to aid convergence. The program default
extraction methods which can be applied to this model, some value for GMIN is 10–12 mhos but can be set to any other
of which yield more accurate results than others. The non–zero value with a OPTIONS line in the circuit file [5].

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Table 5. SPICE Diode Model Parameters

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Name Parameter Default value Typical value Units

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
IS Saturation Current 10.0 f 50.0 f A

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
RS Ohmic Resistance 0 2.0 ohm

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
N Emission Coefficient 1.0 1.1

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
TT Forward Transit Time 0 10.0 n sec

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
CJO Zero–bias Junction Capacitance 0 10.0 p F

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
VJ Contact Potential 1.0 0.8 V

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
M Junction Capacitance Grading Exponent 0.5 0.3

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
EG Energy Gap 1.11 1.11 eV

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
XTI IS Temperature Exponent 3.0 3.0

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
KF Flicker Noise Coefficient 0 0.1f

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
AF Flicker Noise Exponent 1.0 1.0

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
FC CJ Forward–bias Coefficient 0.5 0.5

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
BV
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Reverse Breakdown
ÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
IBV Current at BV

1.0 m
100.0
200.0 p
V
A

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Rectifier Applications

To insure convergence between regions (c) and (d), it is


ID necessary that IBV is defined as
+
IBV w IS @ BV (3.8)
Vt

R5
A typical plot of ID versus VD generated by these equations
is shown in Figure 49 where each of the regions (a) through
(d) are indicated.
VF The Small–Signal AC Model
The ac model of the SPICE diode is derived from the
+
linearized small–signal behavior of the internal diode D1
D1 VD Gmin
– shown in Figure 48. The circuit elements of this model
include the junction capacitance CJ, the dynamic
conductance GD, and the diffusion capacitance CD, all of

which are bias dependent as are those corresponding
elements of the ideal diode model.

Figure 48. DC Large–signal SPICE Diode Model ID

The dc model variables consist of the voltage across the


external diode terminals VF. The voltage across the internal
diode terminals VD and the terminal current ID. With these (c)
parameters and variables, the large–signal dc characteristics –BV –5•N•Vt
are modeled by the following equations (d) (b) (a)
VF + RS @ ID ) VD (3.1)
VD
and IS
ID + f(VD) (3.2) IBV

where four regions of operation describe the functional


relationship between the internal diode voltage and diode
current.
(a) For VD w *5 @ N @ Vt

NJ ǒ
ID + IS @ exp
VD
N @ Vt
Ǔ Nj
* 1 ) GMIN @ VD (3.3)

(b) For *BV ¦ VD*5 @ N @ Vt


Figure 49. Large–scale I–V Characteristics of the
ID + *IS ) GMIN @ VD (3.4) SPICE Diode Model
(c) For VD + *BV,
ID + *IBV
The junction capacitance is modeled by the parameters
(3.5)
CJO, VJ, M, and FC. The parameters CJO and VY are
(d) For VD ¦ *BV, identical to the zero–bias junction capacitance Cj(0) and the

ID + *IS @ exp NJ ǒ*(BVV)t VD)Ǔ * 1 ) BVVtNj (3.6)


contact potential Vj described for an ideal diode. The
parameter M is a grading exponent that is used to change the
slope of the junction capacitance versus voltage (C–V)
For all of these equations, Vt is the thermal voltage which is characteristics curve. For abrupt or step junctions, M is 0.5
defined as while for linearly graded junctions, M is about 0.333. The
parameter FC is used to model the capacitance under
Vt + k @
q
T
(3.7) forward bias conditions.

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Rectifier Applications

The variables for the model are the junction capacitance CJ


CJ in farads and the internal diode voltage VD which are
related by
CJ + f(VD) (3.9) (a) (b)

where two regions of operation describe this function.


(a) For VD ¦ FC @ VJ,
CJO
NJ
V *M
CJ + CJO @ 1 * D
VJ
Nj (3.10)

(b) For VD w FC @ VJ,


ǒ Ǔ
0 FC•VJ VD
CJ + CJO @ 1 * FC @ (M ) 1) ) M @ VD
(1 * FC) (M)1) VJ
(3.11)
Figure 50. Junction C–V Characteristics of the SPICE
To insure that the last equation remains well behaved, PC Diode Model
is restricted to values between zero and one; that is,
0 v FC ¦ 1 (3.12) where three regions of operation describe this functional
A typical C–V curve produced by these equations is relationship:
shown in Figure 50 where each of the two regions are (a) For VD w *5 @ N @ Vt
indicated.
The dynamic conductance is modeled by the slope of the CD + ǒ
TT @ IS
N @ Vt
Ǔ
@ exp
VD
N @ Vt
ǒ Ǔ (3.18)
I–V curve evaluated at a particular bias voltage. This slope
is found from the voltage derivative of the current described (b) For *BV ¦ VD ¦ *5 @ N @ Vt
in equations (3.3) through (3.6). The conductance GD in CD + * TT @ IS (3.19)
mhos of the internal diode D1 as a function of the voltage VD VD
is derived from (c) For VD v *BV
CD + 0 (3.20)
GD + f(VD) (3.13)
The complete small–signal ac model of the SPICE diode
where three regions of operation describe this functional is shown in Figure 51 where the resistance RS has been
relationship which involve the parameters IS and N. included with the elements defined above.
(a) For VD w *5 @ N @ Vt, Temperature and Area Effects

GD + ǒN IS@ Vt @ expǒNV@DVtǓ (3.14)


Temperature behavior of the SPICE diode is modeled
through certain temperature–dependent parameters. These
parameters are IS, VJ, CJO, and EC. In the equations to
(b) For *BV ¦ VD ¦ *5 @ N @ Vt, follow, TNOM is the nominal or reference temperature
GD + * IS (3.15) having a default value of 27C. This value can also be
VD changed with the use of the .OPTIONS line. The variable T
(c) For VD v *BV, is the analysis temperature (in C) which has a default value
GD + 0 (3.16) of 27C if the TEMP line is omitted from the circuit file. If
the .TEMP line is used for temperature analysis, T takes on
The diffusion capacitance CD is modeled by the forward
the values given in this line. It is important to note that
transit time parameter TT, and the parameters IS and N.
SPICE assumes all input data and model parameters have
Similar to an ideal diode, this capacitance in farads is voltage
been specified at 27C. Even though temperature is
dependent and is derived from
specified in the circuit file and in the .OPTIONS line in C,
CD + f(VD) (3.17) it is converted by SPICE to K for use in the equations.

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Rectifier Applications

For the saturation current IS, the parameters N, EG, and For the zero–bias junction capacitance CJO, the
XTI are used to model its temperature dependence with the parameters M and VJ are used to model its temperature
equation: dependence with the equation:

IS(T) + IS(TNOM) @ ǒTNOM


T Ǔ
XTI1N CJO(T) + CJO(TNOM) @

NJ ƪ VJ(T)
ƫNj
NJƪ ƫNj
1 ) 4 @ 10 *4 @ M @ (T * TNOM) ) m @ 1 *
@ exp
q @ EG
N@K
@ ƫ ƪ
1 *1
TNOM T (3.21)
VJ(TNOM)

(3.25)

The last temperature–dependent parameter is FC, the


A
junction capacitance forward–bias coefficient. This
parameter has the simple function given as:
A
RS FC(T) + FC(TNOM) @ ǒVJ(TNOM)
VJ(T)
Ǔ (3.26)

For the ideal diode, certain parameters are functions of the


junction area. The SPICE program also provides
CG CJ CD Gmin
area–dependency on these parameters through the use of the
AREA factor in the diode description line in the circuit file.
The parameters affected by the AREA factor are IS, RS, CJO
K and IBV which are modified by the following equations:
IS + AREA @ IS (3.27)
K
RS + RS (3.28)
AREA
Figure 51. AC Small–signal SPICE Diode Model
CJO + AREA @ CJO (3.29)

where IS (TNOM) is the nominal value of the saturation IBV + AREA @ IBV (3.30)
current and IS(T) is the value evaluated at the analysis
temperature T. where AREA has a default value of 1.
The contact potential VJ has the temperature–dependent
function given below The Noise Model
Small–signal noise behavior of the SPICE diode is
VJ(T) + VJ(TNOM) @ ǒTNOM
T Ǔ modeled by two noise current sources added to the
small–signal ac circuit model as shown in Figure 52. The
)2@q
k @ T @ 1n ǒni(TNOM)
ni(T)
Ǔ (3.22)
current source iRS is responsible for modeling thermal noise
generated by the resistance RS. The mean–squared value of
thermal noise current (in A2) generated by this source is
In this expression, VJ(TNOM) is the TNOM value of VJ,
expressed as
VJ(T) is the value evaluated at T, and ni(T) is the intrinsic
2
carrier concentration (in cm–3) of silicon which is also a i RS + 4 @ k @ T @ f (3.31)
function of temperature. That is, RS

ni(T) + 1.45 @ 1010 @ T


TNOM
ǒ Ǔ1.5 where T is the temperature in K and ∆f is the noise
bandwidth in Hz. The current source iD, is responsible for

exp NJƪ q
2@K
@ ƫTNOM
ƪ
Eg(TNOM) Eg(T)
*
T
ƫNj (3.23)
modeling both shot and flicker noise (1/f noise) generated in
the depletion region of the diode. The total mean–squared
value of noise current (in A2) generated by this source is
expressed as
where Eg(T) is the temperature–dependent function for the
energy gap (in eV) of silicon. From experimental results, this 2 ID (3.32)
i D + 2 @ q @ ID @ f ) KF @ @ f
function is found to be f
*4 @ T2
Eg(T) + 1.16 * 7.02 @ 10 (3.24) where ID is the dc diode current, f is the frequency at which
T ) 1108.0 the noise is measured, and AF and KF are SPICE flicker
At 27C, Eg calculates to be about 1.115 eV. noise parameters.

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Rectifier Applications

The Diode Model versus a Real Diode (SPICE)


To see how well the equations for the SPICE diode model
simulate the behavior of both ideal and real diodes,
comparisons are made among the terminal characteristics of
(Real)
all three. These comparisons use standard characteristic
curves which illustrate the behavior of a typical real diode
(shown with solid curves), and those produced by the ideal (Ideal)
and SPICE diode models (shown with dashed curves). For
clarity, all curves are labeled to indicate their origin.
The current (logarithmic scale) versus voltage (linear scale)
for a diode driven by a forward–bias dc voltage is plotted and
shown in Figure 53. From this I–V plot,three distinct regions
of operation are observed. In Region I, the device is operating
under extreme low–level injection for bias voltages ranging
from zero to about 100 mV, typically. For this mode of
operation, the injected carriers passing through the depletion
region are largely affected by the many generation and
recombination (G–R) centers found near the metallurgical
junction. The dominant effect of these G–R centers causes the
0 100 mV VF (max) VF
increase in the diode current with respect to the voltage to be
smaller than ideally predicted. In Region II, the diode is
Region Region Region
operating under low–level injection. The voltage range for
I II III
this region is from about 100 mV to a value determined by
VF(max) which is derived from

ǒ10N low Ǔ
2 Figure 53. Forward–bias I–V Characteristics for Real,
VF(max) + Vt @ 1n 2
(3.32) Ideal, and SPICE Diodes
@n i
Superimposed on this plot is the dashed curve
where Nlow is the smaller of the impurity concentrations. representing the I–V characteristics of an ideal diode. It is
Under this mode of operation, the G–R centers do not affect clear that this model is fairly accurate in Region II, but falls
the injected carriers as much as in Region I, and the current short of predicting the behavior of Regions I and III. The
increase over this voltage range is found to be close to that second dashed curve is that of the SPICE diode which is
predicted for an ideal diode. Beyond the voltage VF(max), the generated by Equations 3.1 and 3.3. Compared to the real
diode operates under high–level injection as illustrated by diode, the characteristics produced by this model illustrate
Region III. Here the resistances of the neutral n and p–type significant accuracy in Regions II and III. However, like the
regions produce ohmic voltage drops which tend to reduce the ideal diode, the characteristics are less accurate in Region I.
current increase. As these drops become more dominant, the In Figure 54, the linear–scaled I–V characteristics of a real
diode current stops increasing exponentially and becomes diode are shown for both the forward and reverse–bias
more proportional to the bias voltage. conditions. As the reverse–bias voltage increases toward the
breakdown voltage, the diode current in the reverse
direction exhibits a slight increase due to surface leakage
A effects. For real diodes, this current is referred to as the
reverse leakage current IR . The current at which breakdown
occurs is called the breakdown current IBV. The first dashed
A iRS RS
curve represents the I–V characteristics of an ideal diode.
Under reverse–bias conditions, the reverse leakage current
is main–mined by the saturation current IS which is constant
and not affected by the voltage. Even though the breakdown
iD
GD CJ CD Gmin voltage can be calculated, the true breakdown behavior is
not predicted by the ideal diode model equations.
The second dashed curve represents the I–V
K characteristics of the SPICE diode as generated by
Equations 3.3 through 3.6. For this model, the reverse
K leakage current is maintained by the saturation current
Figure 52. AC Small–signal SPICE Diode Model with parameter IS, which is also constant and unaffected by the
Noise Sources voltage. However, the behavior of the model at the
breakdown voltage is fairly close to that of a real diode.

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53
Rectifier Applications
ID

(Ideal) (SPICE)

(Real)

–5•N•Vt
–BV
–IS VF
–IBV

Figure 54. Forward and Reverse–bias I–V Characteristics for the Real, Ideal, and SPICE Diodes

Junction capacitance versus voltage characteristic curves region, the parameter PC is used in Equation 3.11 to produce
are shown in Figure 55. Under forward–bias, the C–V a straight–line approximation to the C–V curve for voltages
characteristics for a real diode are well behaved for voltage beyond FCVJ.
values close to the contact potential Vj. For an ideal diode, A plot of diffusion capacitance as a function of
however, the capacitance calculated near Vj tends to forward–bias diode current is shown in Figure 56. The
approach unrealistic values. In the reverse–bias region, the diffusion capacitance behavior of an ideal diode illustrates
results of this equation show close similarity to the a proportional increase in capacitance with current since the
capacitance of a real diode. forward transit time T is assumed to be constant. This is the
The results of the SPICE diode junction capacitance case for the SPICE diode since the corresponding parameter
equations show a very accurate similarity to the capacitance TT is also constant. For a real diode, however, τT is known
of a real diode, especially in the reverse–bias region. This is to increase with current at high current levels due to current
due in part to the. parameter M in Equation 3.10 which crowding effects. Thus, the diffusion capacitance typically
allows the slope of the C–V curve to vary, lathe forward–bias deviates from predicted behavior as illustrated.

log CD (Real)
CJ

(Ideal & SPICE)

(Ideal)
(SPICE)

(Real)
CJ (0)

0 FC•VF VJ VF
log ID

Figure 55. Forward and Reverse–bias Junction C–V Figure 56. Diffusion Capacitance Characteristics for
Characteristics for the Real, Ideal, and SPICE Diodes the Real, Ideal, and SPICE Diodes

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Rectifier Applications

Figure 57 is a plot of the temperature coefficient (TCV) as semiconductor regions of a real diode is actually
a function of forward–bias current. The TCV for a real diode positive, which produces a positive TCV at high–level
typically has negative values over low current ranges but injection.
increases to positive values at higher currents. This is due (d) The emission coefficient N is constant, and cannot
mainly to the positive temperature coefficient of the bulk model the change in the slope of the I–V characteristics
resistance which dominates the diode voltage at these levels. between the extreme low–level and low–level injection
The TCV of an ideal diode has negative values over a large regions. For convergence purposes, N must be greater
range of current as shown. This is also true for the SPICE than 0.01.
diode since the resistance parameter RS has no temperature (e) The forward transit time TT is constant and not a
coefficient. function of current or voltage. As such, the diffusion
capacitance CD will increase proportionally with
TCV current and the simulated reverse recovery time trr will
be constant over current.
(f) The temperature dependence of the zero–bias junction
capacitance CJO is consistent with that of silicon only.
(+) In Equation 3.25, the coefficient of thermal expansion
is that of silicon material.
(Real) (g) From Equations 3.22 to 3.24, the TNOM value of the
contact potential VJ must be greater than 0.4 V to insure
convergence for temperature analysis up to 200C. For
0 a larger value of the analysis temperature, these
log ID equations can be used to determine the minimum value
of VJ.
(Ideal & SPICE) (h) The temperature dependencies of the contact potential
VJ, the intrinsic cater concentration ni, and the energy
(–)
gap EG given in Equations 3.22 to 3.24, respectively,
are consistent with that of silicon material only.
(i) For convergence, the forward bias coefficient PC is
restricted to values between zero and one as indicated
Figure 57. Voltage Temperature Coefficient (TCV)
in Equation 3.12; that is,
Characteristics for the Real, Ideal, and SPICE Diodes
0 v FC ¦ 1.0
SPICE Diode Model Parameter
Limitations and Restrictions (j) The reverse breakdown voltage BV has a default value
of infinite. A specified value of zero for BV is
Based on these comparisons, it is obvious that the SPICE
interpreted by SPICE to mean infinite.
diode model is capable of performing a fairly accurate job
(k) The reverse breakdown characteristics of a real diode
in simulating the behavior of a real pn junction diode. It is
tend to be “soft”; that is, the reverse leakage current
just as obvious, however, that the model is also limited in its
gradually increases toward the breakdown current as
range of accurate simulation due in part to limitations of its
the reverse–bias voltage increases. For the SPICE
parameters. The following statements provide a review of
model, the reverse leakage current is modeled by the
the limitations on the model parameters and how they affect
parameter IS which is constant out to the breakdown
the simulation results. For some of the parameters,
voltage. This produces a “hard” breakdown
suggested value restrictions are given in order to insure
characteristic for the model.
convergence.
(l) The current at the breakdown voltage 1EV is dependent
(a) The saturation current IS is constant and not a function
upon IS and BV. For convergence, IBV is restricted to
of the reverse–bias voltage. Therefore, the simulated
values determined by
reverse leakage current remains constant over the
reverse–bias region up to the breakdown voltage. IS(T) @ BV
IBV w (3.34)
(b) The ohmic resistance RS is constant and not a function Vt(T)
of current or voltage. The resistance of the bulk neutral where the saturation current IS and the thermal voltage
semiconductor regions of a real diode actually increases Vt must be calculated at the largest value of simulation
as current increases for high–level injection. temperature by Equations 3.21 and 3.7, respectively.
(c) RS has no temperature coefficient. The temperature (m) IBV is often not consistent with the breakdown current
coefficient of the resistance of the bulk neutral IBV of a real diode at the specified breakdown voltage.

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Rectifier Applications

SPICE Diode Model Parameter where εi, is the normalized error of the ith data point and n
Extraction Methods is the number of data points [7], For most modeling
The methods given in this section for the extraction of the applications, the method which produces the smallest value
SPICE diode model parameters are based on data acquired of E2 is therefore judged the best method and the parameters
from a real device, Table 6 lists the necessary data required extracted with this method provide the most accurate results.
for the extraction of certain parameters. This data may be
taken from actual measurements or from characteristic plots Forward DC Characteristics (IS, RS, N)
available on most data sheets. For data sheet information, it There are three methods for the extraction of the
is assumed that the plots represent a typical device and that parameters IS, RS, and N which model the large–signal dc
the SPICE model is valid for these devices. The tools needed behavior in the forward–bias region. The first method
for the extraction methods include a suitable scientific computes these parameters from three points taken from the
calculator (programmable, if possible) which is capable of forward–bias I–V curve and is appropriately called the
performing statistical calculations, and an understanding of three–point I–V method. The second method uses a fixed
linear and nonlinear least–squares curve fitting methods. value of RS (which can be taken from the results of the
three–point I–V method) and performs a linear regression
Table 6. Diode Data Requirements for SPICE Model data fit over the I–V curve to extract IS and N. The third

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Parameter Extraction method uses a fixed value of IS and performs a nonlinear
data fit to extract N and RS, This method is useful if the

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Parameters
Data Required Extracted reverse leakage current IR is specified and is to be modeled

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Forward dc characteristics; forward diode

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
current (ID) versus forward diode voltage (VF). IS, RS, N
by IS.
1. Method 1 (Three–point 1–V method). To use this

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Junction capacitance characteristics; method, it is necessary to have a plot of the dc
reverse–bias junction capacitance (Cj) versus CJO, VJ, M forward–bias I–V curve where the current axis is

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
reverse bias voltage (VR). logarithmically scaled and the voltage axis is

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Reverse recovery time (trr) versus forward TT linearly scaled as shown in Figure 58. Estimated

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁ
diode current (IF). values for the parameters can be found from the
Forward voltage (VF) temperature coefficient steps outlined below.

ÁÁÁÁÁÁÁÁÁÁÁÁÁ
versus forward current (ID), or reverse current EG, XTI
(i) Select three data points from the I–V curve shown as

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
(IR) versus temperature.
points 1, 2, and 3.

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Breakdown voltage characteristics. BV, IBV
(ii) Using the values of current and voltage
Noise measurements (parameters usually set KF, AF

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
corresponding to these points as indicated, calculate
to default values).
values for the parameters RS, N, and IS from the

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Other parameters for which the defaults are
following equations
assumed: FC = 0.5 (typical) FC

For some parameters, more than one method of extraction


may be given. To determine which method is best in
(VF2 * VF1) ) (VF1 * VF3) @ NJ Nj
1nǒIID1
1nǒ
D2
ID1
ID2
Ǔ
Ǔ
providing a set of parameters yielding the most accurate RS +
simulation, it is necessary to examine the differences
between actual device data and the results provided by the
model equations when using these parameters. By defining
(lD2 * ID1) ) (ID1 * ID3) @ NJ Nj
1nǒIID1
1nǒ
D2
ID1
ID2
Ǔ
Ǔ
(3.36)
these differences as errors, a single quantity can be
calculated for each method that can be used as a basis of
comparison. This quantity is called the error function E2 (VF1 * VF2) ) RS @ (ID2 * ID1)
N+
which is the sum of the squares of the magnitudes of the per Vt @ 1nǒID1Ǔ (3.37)
I
D2
unit or normalized errors between actual device data and the
corresponding data generated by the model. This function is
represented by the equation given below ID1
IS + (3.38)
expǒ F1 N@V D1Ǔ * 1
V *RS@I
E2 + |1|2 ) |2|2 . . . ) |n|2 + |i|2 (3.35) t

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56
Rectifier Applications
log ID The constants b and m are the y–axis intercept and
3 slope, respectively, of the straight line represented
ID3
by Equation 3.42, Values for these constants can be
i
found by solving the matrix equation
IDi
n (xi) b (yi)
2 @ +
ID2 (xi) (xi)2 m (xi) @ (yi) (3.47)

where the summations are taken over the n data


points. The calculated values of b and m are then
1 used to find IS and N from Equations 3.45 and 3.46
ID1
where
IS + exp(b) (3.48)
VF1 VF2 VFi VF3 VF and
1
N+m
Figure 58. Forward–bias DC Data for the Three–point (3.49)
I–V Method It is important to note that many scientific
calculators have built–in statistical functions
2. Method 2 (Linear regression with fixed RS). With capable of performing linear regression
this method, a linear regression data fit is calculations. For the type of equations used in this
performed on the data covering the full range of method, these functions can be used to extract the
the I–V curve to an equation of a straight line parameters IS and N directly. This, of course,
which represents the diode dc characteristics. This eliminates the need to generate and solve Equation
equation can be derived by combining Equations 3.47. The steps involved in this method are outlined
3.1 and 3.3 to below.
produce (i) Select a value of RS which maybe the value
NJ ǒVFi *N @RSVt@ IDiǓ * 1Nj
IDi + IS @ exp (3.39) calculated from Equation 3.36 in Method 1.
(ii) Perform a linear regression data fit on n data points
taken from the I–V curve to Equation 3.42 where
where IDi and VFi represent the ith data point taken the yi and xi data values are calculated from
from n data points on the I–V curve (shown in Equations 3.43 and 3.44. This data fit will give
Figure 59), and RS is a known value of the ohmic values for b and m.
resistance parameter. Assuming that the (iii) Calculate the values of IS and N from Equations 3.48
exponential term is sufficiently large, this equation and 3.49, respectively.
can be approximated by
3. Method 3 (Nonlinear curve fit with fixed IS). The
1n(IDi) + 1n(IS) ) 1 @ Fi
N Vt
ǒ
V * RS @ IDi
Ǔ (3.41)
techniques used in this method are similar to those
of Method 2 except that IS is held fixed, and RS
and N are extracted. This method is particularly
Taking the natural logarithm of both sides yields useful when IS must model a known value of the
reverse leakage current. The equation for the curve
yi + b ) m @ xi (3.42)
fit is derived from Equation 3.39 where voltage is
which is the equation of a straight line expressed expressed as the dependent variable; that is
as
IDi ^ IS @ exp ǒVFi *N @RSVt@ IDiǓ (3.40) I
ǒ Ǔ
VFi + N @ Vt1n Di ) 1 ) RS @ IDi
IS (3.50)
where:
yi + 1n(IDi) (3.43) where IDi and VFi again represent the ith data point
taken from n data points on the I–V curve, and IS is
xi + ǒVFi * VRSt @ IDiǓ (3.44)
a known value of the saturation current parameter.
This equation may be expressed as a linear
b + 1n(IS) (3.45) combination of two functions of the current in the
and form of
yi + a1 @ f1(IDi) ) a2 @ f2(IDi) (3.51)
m+ 1 (3.46)
N

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Rectifier Applications

where: C–V curve to extract CJO and M. In both methods, the


yi + VFi (3.52) parameter FC is set to the default value of 0.5 since

ǒ
I
f1(IDi) + Vt @ 1n Di ) 1
IS
Ǔ (3.53)
forward–bias capacitance information is rarely presented on
most diode data sheets.
1. Method 1 (Three–point C–V method), To use this
f2(IDi) + IDi (3.54) method, it is necessary to have a plot of the
a1 + N (3.55) reverse–bias junction capacitance curve (Cj versus
and VR) where each axis is logarithmically scaled as
shown in Figure 59.
(i) Select a data point at the lower end of the C–V curve
a2 + RS (3.56) shown as point 1. The voltage at this point should be
The constants a1 and a2 are found from the solution less than the typical ideal value of VJ (that is, 0.8 volt
of a matrix equation similar in appearance to that of to 1.0 volt).
Equation 3.47 where (ii) Select two data points at the upper end of the curve
shown as points 2 and 3. The voltages at these points
[f1(IDi)]2 [f1(IDi)f2(IDi)] a1
should be much greater than the typical ideal value
@ +
[f1(IDi)f2(IDi)] [f1(IDi)]2 a2 of VJ.
(iii) Using the values of capacitance and voltage
corresponding to these points as indicated, calculate
[y1 @ f1(IDi)] values for the parameters M, VJ, CJO, and FC from
(3.57) the following equations
[y1 @ f2(IDi)]
The summations for the elements of this matrix 1n ǒ Ǔ
Cj2
Cj3
M+ (3.60)
equation are again taken over the n data points. 1nǒVVR3Ǔ
R2
Values of a1 and a2 found from this equation are then
used to calculate N and RS where:
N + a1 (3.58)
k1 + ǒCCj1j2Ǔ1ńM (a constant) (3.61)

and k @ VR1 * VR2


VJ + 1 (3.62)
RS + a2 (3.59) 1 * k1

The details explaining more on the techniques of ǒV


CJO + Cj1 @ 1 ) R1
VJ
M
Ǔ (3.63)
this method may be found in [8], The steps involved
in this method are outlined below. FC + 0.5 (3.64)
(i) Select a value of IS which may be that of the reverse
leakage current at a value of specified reverse–bias
voltage.
(ii) Generate the matrix Equation 3.57 where yi and the log CJ
functions f1(IDi) and f2(IDi) are calculated from
Equations 3.52 through 3.54 for the n data points 1
taken from the I–V curve. CJ1
(iii) Solve this matrix equation for the constants a1 and i
a2, and calculate the values of N and RS from CJi
Equations 3.58 and 3.59, respectively.
2
Junction Capacitance Characteristics CJ2
3
(CEO, VJ, M, FC)
CJ3
There are two methods for the extraction of the parameters
CJO, VJ, M and FC which model the behavior of the
junction capacitance. The first method computes these
parameters from three points taken from the reverse–bias
C–V curve and is appropriately called the three–point C–V VR1 VRi VR2 VF3 Log VR
method. The second method uses a fixed value of VJ (which
can be taken from the results of the three–point C–V Figure 59. Reverse–bias Junction Capacitance Data
method) and performs a linear regression data fit over the for the Three–point C–V Method

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Rectifier Applications

2. Method 2 (Linear regression with fixed VJ). With Reverse Recovery Time Characteristics (TT)
this method, a linear regression data fit is For the extraction of the forward transit time parameter
performed on the data covering the full range of TT, the results of reverse recovery time (trr) measurements
the reverse–bias C–V curve to an equation of a derived by Leinfelder are employed [9]. The common
straight line representing the capacitance JEDEC test circuit for measuring trr shown in Figure 60
characteristics in this region. For reverse–bias while the idealized time–domain waveform of the diode
voltages, Equation 3.10 can be expressed as current resulting from this circuit is shown in Figure 61. The
reverse recovery time trr is commonly measured between the
ǒ V
Cji + CJO @ 1 ) Ri
VJ
*M
Ǔ (3.65) time that the current (previously forward biased at IF) passes
through zero going negatively and the time that the reverse
where Cji and VRi represent the ith data point taken current recovers to a value which is less than 10% of the peak
from n data points on the C–V curve (shown in reverse current IRM [10]. From Figure 61, trr is shown to
Figure 59), and VJ is a known value of the contact consist of ta, which is the time for the diffusion charge
potential parameter. Taking the natural logarithm of supporting the reverse current to reduce to zero, and tb which
both sides yields is the time for the depletion charge supporting the forward
V
1n(Cji) + 1n(CJO) * M @ 1n 1 ) Ri
VJ
ǒ Ǔ (3.66)
voltage to also reduce to zero. At the end of trr the diode is
turned off and cannot sustain the reverse current. The total
which is the equation of a straight line expressed as charge depleted from the diode during the reverse recovery
time is called the reverse recovery charge Qrr which is the
Yi + b ) m @ x i (3.67)
sum of the charges Qa and Qb represented by the areas under
where: the waveform during times ta and tb, respectively. By
yi + 1n(Cji) (3.68) assuming that Qrr is dominated by the charge Qa so that the
reverse recovery time trr, is approximately equal to ta, the
ǒ V
xi + 1n 1 ) Ri
VJ
Ǔ (3.69)
following equations can be generated from the information
shown on Figure 61. For the current fall–time tf:
b + 1n(CJO) I
(3.70) tf + diF
ǒdtǓ (3.74)
and
m + *M (3.71) where IF is the forward–bias diode current in amps and. di/dt
The constants b and m are the y–axis intercept and is the slew–rate in amp/second of the current set by the
slope, respectively, of the straight line represented circuit. The expression for trr is:
by Equation 3.67 Values for these constants can be I
trr ^ ta + RM
found by solving a matrix equation similar to that of di ǒdtǓ (3.75)
equation 3.47 or by using the linear regression
function on the calculator. The parameters CJO and where IRM is the peak reverse current. Assuming that the
M are then calculated from reverse recovery charge Qrr is approximately equal to the
CJO + exp(b) (3.72) charge Qa, the area under the triangle corresponding to this
charge is computed from
and
M + *m (3.73) t @I
2
t2
2 dt
t2
2
ǒ Ǔ
Qrr ^ Qa + a RM + a @ di + rr @ di
dt
ǒ Ǔ (3.76)
The steps for this method are outlined below.
(i) Select a value of VJ which may be the value From Leinfelder’s work, an expression for Qrr was derived
calculated from Equation 3.62 in Method 1. from curve–fitting methods and was found to be accurate for
(ii) Perform a linear regression data fit on n data points simulating trr. This expression is given as
taken from the C–V curve to Equation 3.67 where
the yi and xi data values are calculated from
Equations 3.68 and 3.69. This data fit will give
Qrr + IF @ TT @ exp ǒ* ǸTTtf Ǔ
values for b and m.
ȡ* n IF ȣ
ȧ ǸTT @ ǒ Ǔȧ
(iii) Calculate the values of CJO and M from Equations
+ IF @ TT @ exp
Ȣ Ȥ
3.72 and 3.73, respectively, and the value of FC from di
Equation 3.64. dt (3.77)

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59
Rectifier Applications
R1

L1
di/dt Adjust
T1
T2 +
C1
D3 I(PK) Adjust
_ Out
C2
R2 D2
1:1

T3
D1 SCR1

Oscilloscope Current
Viewing
Resistor
Figure 60. JEDEC Reverse Recovery Time Test Circuit

ID

IF
di
dt
trr

ta tb
0
0 Qb t
tf Qa

–IRM

Figure 61. Idealized Time–domain Waveform for the Diode Current from the Test
Circuit of Figure 60

where TT is, of course, the forward transit time parameter. The steps for extracting the parameter TT are outlined
By setting Equations 3.76 and 3.77 equal to each other, a below.
single expression involving TT is derived (i) From the device data sheet, determine values for the
reverse recovery time trr the forward–bias diode
current IF, and the slew–rate of the current waveform
ȡ* n IF ȣ
t2rr
ǒ Ǔ ȧ ǸTT @ ǒ Ǔȧ
di/dt.
@ di + IF @ TT @ exp
2 dt
Ȣ Ȥ di
dt (3.78)
(ii) Generate a function of the forward transit time TT
where:

ȡ* n IF ȣ
t2
ǒ Ǔ
f(TT) + rr @ di + IF @ TT @ exp ȧ ǸTT @ ǒ Ǔȧ
Thus, by knowing trr IF, and the current slew–rate di/dt,
Equation 3.78 can be solved iteratively to find TT.
2 dt
Ȣ Ȥdi
dt

Numerical algorithms such as Newton’s method can be used (3.79)


on this equation which is easily implemented on a (iii) Use Newton’s method to solve Equation 3.79 for the
programmable calculator [7]. value of TT that will set f(TT) to zero.

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60
Rectifier Applications

Temperature Characteristics (EG, XTI) ID


There are three methods for the extraction of the
T1 To (27°C)
parameters EG and XTI. In each of these methods, only one
temperature–dependent expression is used where EG is
selected and XTI is calculated. The first method uses the
small–scale expression for the voltage temperature
coefficient TCV found from the derivative of the voltage VF ID
with respect to temperature. The second method uses the
large–scale expression for the TCV which is derived from
the change of the diode forward voltage over large
temperature changes. The third method uses the expression
for the temperature dependent saturation current IS given in
Equation 3.21 to model the temperature behavior of the
reverse leakage current IR. In all of the equations used in
these methods, temperature values must be convened to
degrees Kelvin (K). VF (T1) VF (To) VF
1. Method 1 (Small–scale TCV method). From
Equations 3.1 and 3.3, the expression for the diode
forward voltage as a function of temperature is Figure 62. Typical Forward–bias Diode Voltage
derived as: Temperature Characteristics

VF(T) + N @ Vt(T) @ 1n ǒIS(T)


ID
) 1Ǔ ) RS @ ID (3.80)
2. Method 2 (Large–scale TCV method). Again from
Equation 3.80, the large–scale form of the voltage
temperature coefficient is derived and shown
Using the temperature–dependent expression for below
the saturation current IS given in Equation 3.21, the
small–scale or derivative form of the voltage TCV +
VF(T)
T
V (T ) * VF(T0)
+ F 1
T1 * T0
|I + 1
T0
ǒ Ǔ
D
ȡ ǒ Ǔ ȣȦȤ
temperature coefficient TCV is derived and shown
ǒ Ǔ
ǒ Ǔ
T
T1 @ 1n 1
below
@ ȥN @ Vt ǒToǓ @ 1n
ID
* [EG ) XTI @ Vt ǒToǓ @
To
]
Ȣ ISǒToǓ T1 * To

dVF(T)
TCV + |I
dT D, T (3.83)

NJN @ Vt(T) @ 1nǒ ID
IS(T)
) 1Ǔ * (EG ) XTI @ Vt(T) Nj where T1 is a temperature read from the data sheet,
To is room temperature of 27C, VF(T1) and VF(To)
+
T are the diode voltages at these temperatures, and ID
(3.81) is the forward current, all of which are shown on the
typical I–V curve of Figure 62. This equation and
where ID is the forward current and T is the data are used to find EG and XTI with the steps
temperature at which the TCV is measured, usually outlined below.
27C. This equation is now used to find EG and XTI (i) From the data sheet I–V curve plotted for at least two
with the steps outlined below. temperatures, calculate the large–scale TCV at the
(i) From the data sheet, determine the value of the TCV, current ID from the expression
and the values of the forward current ID, and the V (T ) * VF(To)
TCV + F 1 | ID (3.84)
temperature T corresponding to the TCV. T1 * To
(ii) Select a suitable value for the energy gap EG which (ii) Select a suitable value for the energy gap EG which
should correspond to the type of material used to should correspond to the type of material used to
process the diode (for example, 1.11 eV for silicon). process the diode (for example, 1.11 eV for silicon).
(iii) Solve for the value of the parameter XTI from (iii) Solve for the value of the parameter XTI from
Equation 3.81 where Equation 3.83
XTI + ǒVt1(T)Ǔ where
NJN @ Vt(To) @ 1nǒ ID
Ǔ * (EG ) To @ TCV)Nj
NJ ) 1Ǔ * (EG ) T @ TCV)Nj
IS(To)

@ N @ Vt(T) @ 1n ǒIS(T)
ID
CTI +

Vt(To) @ ǒ T1@1n
Ǔ
ǒTT1oǓ
T1*To

(3.82) (3.85)

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61
Rectifier Applications

3. Method 3 (Reverse leakage current method). Reverse Breakdown Characteristics (BV, IBV)
Assuming that the temperature behavior of the The steps for extracting the parameters BV and IBV are
diode reverse leakage current IR can be modeled outlined below.
by that of the saturation current parameter IS, (i) From the device data sheet, determine the value of
Equation 3.21 can be used directly to extract the the maximum dc blocking voltage VR(max).
parameters EG and XTI. From this equation, the (ii) Multiply this voltage by a constant kBV having a
temperature–dependence of IR can be written as value ranging from about 1.3 to 2.0. This will
account for the amount of manufacturers
IR(T1) + IR(To) @ T1
To
ǒ ǓXTI1N guard–band placed on the breakdown voltage in
order to insure the maximum voltage rating. This

@ exp NJǒ q @ EG
N@K
Ǔ ǒ
@ 1 * 1
To T1
ǓNj
(3.86)
opera–don produces the value for the breakdown
voltage parameter BV where

where T1 is a temperature read from the data sheet, BV + kBV @ VR(max) (3.88)
To is room temperature of 27C, and IR(T1) and
IR(To) are the leakage currents at these (iii) Calculate the value IBV from
temperatures, all of which are shown on the typical
IR versus temperature curve of Figure 63. Equation IS(Tmax) @ BV
IBV + (1.1) @ (3.89)
3.86 and this data are used to find EG and XTI with Vt(Tmax)
the steps outlined below.
(i) From the data sheet reverse leakage current versus where the 1.1 multiplier insures the inequality in
temperature (IR versus T) curve, select values of the Equation 3.8 and Tmax is the maximum simulation
leakage current at the temperatures To(27C) and T1 temperature.
that is, IR(To) and IR(T1).
(ii) Select a suitable value for the energy gap EG which
should correspond to the type of material used to
Example Parameter Extractions for the
process the diode (for example 1.11 eV for silicon).
(iii) solve for the value of the parameter XTI from MURHB4OCT Diode
Equation 3.86 where As an example of the methods presented in the last
section, the SPICE model parameters will be extracted for
NJN @ 1nǒ Ǔ * q@EG
IR(T1)
IR(To) k
@ ǒT1 * T1 ǓNj
o 1
the ON Semiconductor MURH84OCT rectifier with the aid
XTI + of a programmable scientific calculator. Pertinent
1nǒTT1Ǔ (3.87) characteristic curves taken from the device data sheet will be
o
used to provide the necessary data for the extraction. In the
log IR
processes that are to follow, particular attention will be
placed not only on these curves but also on certain tabular
information regarding maximum ratings and electrical
IR (T1) characteristics. It is important that this data is included in the
determination of the parameters since the model must
simulate as closely as possible all characteristics of the
diode.
It is industry practice to use 25C as room temperature.
For the extraction process, the SPICE default of 27C will
be used instead and it will be assumed that the 2C
difference will not produce any significant errors. At 27C,
IR (T0)
the value for the thermal voltage Vt which is used in several
of the extraction methods is calculated from Equation 3.7
where

Vt + 25.85562 mV (3.90)
T0 T1 T
27°C
For consistency, the order of parameter extraction will
Figure 63. Typical Reverse Leakage Current follow that of the last section which begins with the forward
Temperature Characteristics dc characteristics.

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62
Rectifier Applications

Forward DC Characteristics (IS, RS, N) 0.00


The forward–bias I–V curve for the MURH840CT
rectifier is shown in Figure 64. Data from this curve will be 0.00 100°C 3
used in each of the three methods for extracting the
parameters IS, RS. and N.
.00 2 25°C
1. Method 1(Three–point I–V method). As shown in
Figure 64, three points are selected on the I–V
curve at 25C as points 1 through 3. The current 00m
and voltage values corresponding to these points
are listed in Table 7. From Equations 3.36 through
00m
3.38, the following parameters are computed from
this data for 27C: 1
00m
RS + 40.20590 m (3.91) 0.00 500.00 m 1.00 1.500 2.00 2.50

N + 2.854546 (3.92) VFM, Forward Voltage (V)

and Figure 64. MURH840CT Forward–bias DC Data


for the Three–point I–V Method
IS + 3.255398 A (3.93)
2. Method 2 (Linear regression with fixed RS). From
Figure 64, the I–V data given in Table 8 is ÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
PointÁÁÁÁÁÁ
Table 7. Data for the Three–Point I–V Method

ÁÁÁÁÁÁ Diode Forward Current Diode Forward

ÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
obtained. These 10 I–V data points are (ID) (A) Voltage (VF) (V)
transformed into x–y data points with Equations

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
1 1.0 m 0.423
3.43 and 3.44 where

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
2 1.0 0.973
yi + 1n(IDi) (3.94)

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
3 30.0 2.390
and

ǒVFi * VRSt @ IDiǓ


3. Method 3 (Nonlinear curve fit with fixed IS). The
xi + (3.95) maximum instantaneous reverse current (IR) at
25C is specified on the data sheet as 10 µA.
for i = 1 to 10. The value of RS used in Equation Since this current is modeled by IS, it is necessary
3.95 is that found from the results of Method 1 given to keep its value less than 10 µA in order to satisfy
in Equation 3.91. For a linear regression data fit the maximum IR specification. Thus, for this
using this transformed data, the matrix equation method, IS is set to 3.0 pA which is close to the
below is generated from Equation 3.47 value at 25C and 400 volts shown in the plot of
reverse current versus reverse voltage of Figure 69.
10 390.3876 b 2.420368 From Table 8, the 10 I–V data points are
@ = transformed into y data points with Equation 3.52,
390.3876 16911.02 m 528.9597
and the two current functions with Equations 3.53
and 3.54 where
(3.96)
Yi + VFi (3.102)
This equation is solved for b and m where
b + *9.909661 (3.97)
I
ǒ
f1(IDi) + Vt @ 1n Di ) 1
IS
Ǔ (3.103)

and and
m + 0.2600451 (3.98) f2(IDi) + IDi (3.104)

From Equations 3.48 and 3.49, values for the for i = to 10. The value of IS used in equation (103)
parameters IS and N are calculated, and presented is 3.0 A. For a nonlinear curve fit using this
with RS where transformed data, the matrix equation below is
generated from Equation 3.57
IS + exp(b) + 49.69228 A (3.99)
N+m 1 + 3.84554 (3.100) 1.202756 43.00399 a2 5.401513
@ =
43.00399 2276.01 a2 224.1998
and
RS + 40.20590 m (3.101) (3.105)

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63
Rectifier Applications

This equation is solved for a1 and a2 where and ε is the error in percent between the data sheet voltage
a1 + 2.986477 (3.106) VF and VFC calculated as
and
V * VF
a2 + 42.0777m (3.107)  + FC @ 100% (3.112)
VF
From Equations 3.58 and 3.59, values for the
parameters N and RS are calculated, and presented
At the bottom of this table are the error functions (E2)
with IS where
calculated from the errors generated by the results of each
N + a1 + 2.986477 (3.108)
method in accordance with Equation 3.35. From an
RS + a2 + 42.07777 m (3.109) examination of these values, it is clear that the parameters
and extracted with Method 1 produce the lowest value for E2.
IS + 3.0 A (3.110) However, the forward voltage errors for currents beyond 1.0
A (where the device is most likely to be used) are

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Table 8. Forward Current Versus Forward Voltage for significantly larger than those produced by the parameters
the MURH840CT

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
extracted with the other two methods. The parameters
Diode Forward Current Diode Forward Voltage

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
extracted by Method 2 yield lower errors in this range even
(ID) (A) (VF) (V)
though it has a larger error function. However, the value of

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
1.0 m 0.423 IS extracted by this method is too large to satisfy the data

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
10.0 m 0.512 sheet specification for maximum IR. The parameters

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
100.0 m 0.663 extracted by Method 3 produce the largest error function of

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
the three while having errors above 1.0 A comparable to
1.0 0.973

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
those of Method 2. The value of IS used in this method does,
5.0 1.408
however, meet the maximum IR specification. Plots of the dc

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
10.0 1.706 characteristics resulting from each of the three methods are

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
15.0 1.925 shown in Figures 65(a) through 65(c). Both data sheet and

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
20.0 2.104 calculated voltages are plotted versus current to illustrate the

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
25.0 2.256
closeness of data fit.

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
At this point in the extraction process, a decision must be
30.0 2.390
made as to which of the three parameter sets should be used
To determine which of these three sets of extracted to most accurately model the device in a practical and
parameters best simulates this example device, the diode realistic manner. If the maximum IR specification (at both
forward voltage is calculated from the SPICE model and 25C and 150C) can be waived, then the parameters
compared to the data sheet value at the same current. These extracted with Method 2 should be used. If this waiver
calculations are performed for each set of the extracted cannot be exercised, which is often the case, then the
parameters and listed in Table 9 where VFC is the voltage parameters from Method 3 should be used in spite of the
calculated from inaccuracy of the data fit for currents below 1.0 A. For this
I
ǒ Ǔ
VFC + N @ VT @ 1n D ) 1 ) RS @ ID
IS
(3.111)
example, the maximum IR specification will be observed
and the parameters extracted by Method 3 will be used.

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64
Rectifier Applications

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Table 9. SPICE Diode Voltages and Percent Error for All Three Methods

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Method 1 Method 2 Method 3

ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ
MURH840CT
ÁÁÁÁÁÁÁÁÁ
IS = 3.255398 µA IS = 49.69228 µA IS = 3.0 µA

ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Data Sheet RS = 40.20590 m RS = 40.20590 m RS = 42.07777 m
Values N = 2.854546 N = 3.845540 N = 2.986477

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ID (A) VF (V) VFC (V) e (%) VFC (V) e (%) VFC (V) e (%)

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
1.0 m 0.423 0.4230000 0.0000 0.3033381 –28.2889 0.4488392 6.1086

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
10.0 m 0.512 0.5930908 15.8380 0.5283141 3.1864 0.6368089 22.4236

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
100.0 m 0.663 0.7666325 15.6308 0.7604325 14.6957 0.8083743 21.9267

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
1.0 0.973 0.9727604 –0.0246 1.0255167 5.3974 1.0240414 5.2458

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
5.0 1.408 1.2523701 –11.0533 1.3463608 –4.3778 1.3166286 –6.4894

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
10.0 1.706 1.5045580 –11.8078 1.6163086 –5.2574 1.5805403 –7.3540

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
15.0 1.925 1.7355133 –9.8435 1.8576529 –3.4986 1.8222380 –5.3383

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
20.0 2.104 1.9577755 –6.9498 2.0872862 –0.7944 2.0548409 –2.3365

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
25.0 2.256 2.1752744 –3.5783 2.3105025 2.4159 2.2824602 1–1729

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
30.0
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
2.390
ÁÁÁÁÁÁÁÁÁÁ
2.3897603 –0.0100 2.5296600 5.8435 2.5069275 4.8924

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
– E2 = 0.0914765 E2 = 0.1155167 E2 = 0.1203895

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65
Rectifier Applications

2.50

2.00

VFM, Forward Voltage (V)


1.50
Data
Sheet
1.00
SPICE

500.00m

0.00
1.00m 10.00m 100.00m 1.00 10.00 100.00
IFM, Forward Current (A)
(a)

3.00

2.50
VFM, Forward Voltage (V)

2.00

1.50 Data SPICE


Sheet

1.00

500.00m

0.00
1.00m 10.00m 100.00m 1.00 10.00 100.00
IFM, Forward Current (A)
(b)

3.00

2.50
VFM, Forward Voltage (V)

2.00

1.50
Data SPICE
Sheet
1.00

500.00m

0.00
1.00m 10.00m 100.00m 1.00 10.00 100.00
IFM, Forward Current (A)
(c)

Figure 65. (a) MURH840CT DC Characteristics from Method 1;


(b) MURH840CT DC Characteristics from Method 2;
(c) MURH840CT DC Characteristics from Method 3

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66
Rectifier Applications

Junction Capacitance Characteristics for i = 1 to 11. The value of VJ used in Equation 3.118 is that
(CJO, VJ, M, FC) found from the results of Method 1 given in Equation 3.114.
The reverse–bias C–V curve for the MURH840CT is For a liner recession data fit using this transformed data, the
shown in Figure 66. Data from this curve will be used in each matrix equation below is generated from Equation 3.47:
of the two methods for extracting the parameters CJO, VJ,
M and FC. 11 31.17795 b –261.1229
@ =
1. Method 1 (Three–point C–V method). From 31.17795 133.9153 m –758.7108
Figure 66, a point is selected at the lower voltage
end of the C–V curve as point 1. Points 2 and 3 are (3.119)
selected at the upper voltage end as indicated. The

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
capacitance and reverse voltage values Table 11. Junction Capacitance Versus

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
corresponding to these points are shown in
Reverse Voltage for the MURH840CT
Table 10.

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
From Equations 3.60 through 3.64, the Diode Reverse Diode Junction

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Voltage (VR) (V) Capacitance (Cj) (pF)
following junction capacitance parameters are

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
computed from this data: 0.01 150.0
M + 0.4012080

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
(3.113) 0.10 130.0

VJ + 0.2159243 V

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
(3.114) 0.40 100.0
CJO + 152.7494 pF

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
(3.115) 0.70 90.0

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
and 1.00 80.0

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
FC + 0.5 (3.116) 2.50 60.0

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
5.50 40.0
Table 10. Data for the Three–Point C–V Method

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
10.00 30.0
Diode Reverse Diode Junction

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Point Voltage (VR) (V) Capacitance (Cj) (pF) 30.00 20.0

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ
1 0.01 150.0 70.00 15.0

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
2 70.0 15.0 100.00 13.0
3 100.0 13.0
This equation is solved for b and m where
2. Method 2 (Linear regression with fixed VJ). From b + *22.58128 (3.120)
Figure 66, the C–V data presented in Table 11 is
and
obtained. These 11 C–V data points are
m + *0.4082637 (3.121)
transformed into x–y data points with Equations
3.68 and 3.69 where From Equations 3.72 and 3.73, values for the
yi + 1n(Cji) parameters CJO and M are calculated, and
(3.117)
presented with VJ and EC where
and
CJO + exp(b) + 155.9821 pF (3.122)
ǒ V
xi + 1n 1 ) Ri
VJ
Ǔ (3.118) M + *m + 0.4082637 (3.123)
VJ + 0.2159243V (3.124)
1000
and
1 FC + 0.5 (3.125)
To determine which of these two sets of extracted
C, Capacitance (pF)

100
parameters best simulates this example device, the diode
junction capacitance is calculated from the SPICE model
2
and compared to the data sheet value at the same voltage.
10 3
These calculations are performed for each set of parameters
and listed in Table 12 where CjC is the calculated capacitance

ǒ V *M
CjC + CJO @ 1 ) R
VJ
Ǔ (3.126)
1
0.01 0.1 1 10 100 and ε is the error in percent between the data sheet
VR, Reverse Voltage capacitance Cj and CjC calculated as
Figure 66. MURH840CT Reverse–bias Junction CjC * Cj
+ @ 100% (3.127)
Capacitance Data for the Three–point C–V Method Cj

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Rectifier Applications

At the bottom of this table are the error functions (E2) example, the parameters extracted by Method 2 will be used.
calculated from the errors generated by the results of each Plots of the junction capacitance characteristics resulting
method. From an examination of these values, it is clear that from both methods are shown in Figures 67(a) and 67(b).
the parameters extracted with Method 2 produce the most Both data sheet and calculated capacitance are plotted
accurate data fit to the actual device. Therefore, for this versus reverse voltage to illustrate the closeness of data fit.

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Table 12. SPICE Diode Junction Capacitances and Percent Error for Both Methods

ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
Method 1 Method 2

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ
CJO = 152.7494 pF CJO = 155.9821 pF
MURH840CT VJ = 0.2159243 V VJ = 0.2159243 V

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Data Sheet M = 0.4012080 M = 0.4082637

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Values FC = 0.5 FC = 0.5
ε (%) ε (%)

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
VR (V) Cj (F) Cjc (F) Cjc (F)

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
10.0 m 150.0 p 150.0000 p 0.0000 153.1256 p 2.0837

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
100.0 m 130.0 p 131.1195 p 0.8611 133.5354 p 2.7195

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
400.0 m 100.0 p 100.3089 p 0.3088 101.6770 p 1.6769

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
700.0 m 90.0 p 85.5457 p –4.9492 86.4700 p –3.9222

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
1.0 80.0 p 76.3538 p –4.5577 77.0247 p –3.7191

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
2.5 60.0 p 55.3101 p –7.8164 55.4806 p –7.5323

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
5.5 40.0 p 41.0343 p 2.5857 40.9452 p 2.3631

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
10.0 30.0 p 32.5062 p 8.3539 32.3030 p 7.6767

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
30.0 20.0 p 21.0384 p 5.1922 20.7476 p 3.7379

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
70.0 15.0 p 15.0000 p 0.0000 14.7049 p –1.9674

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
100.0 13.0 p 13.0048 p 0.0370 127170 p –2.1769
E2 = 0.021063, E2 = 0.018759

1000 1000

Data Data
Sheet Sheet
Capacitance (pF)
Capacitance (pF)

100 100

SPICE SPICE

10 10

1 1
0.01 0.1 1.0 10 100 0.01 0.1 1.0 10 100
Reverse Voltage (V) Reverse Voltage (V)

(a) (b)

Figure 67. (a) MURH840CT Junction Capacitance Characteristics from Method 1;


(b) MURH840CT Junction Capacitance Characteristics from Method 2

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Rectifier Applications

Reverse Recovery Time Characteristics (TT) 2. Method 3 (Reverse leakage current method). In
The typical value for the reverse recovery time trr for the Figure 69, the reverse leakage current (IR) versus
MURH840CT is 24.6 ns. This value is specified at a reverse voltage at three temperatures is plotted. At
forward–bias current (IF) of 1.0 A and a current slew–rate a reverse voltage of 400 V, the reverse currents at
(di/dt) of 50 A/s. The function equation for the forward 25C (To) and 150C (T1) are about 3.0 µA
transit time parameter TT generated from Equation 3.79 is (IR(To)) and 300.0 µA (IR(T1)), respectively.
shown below Again for EG of 1.11 eV, the value for the

ȡ Ǹ20 @ 10 ȣ
parameter XTI is computed from Equation 3.87 as
*9

f(TT) + 15.129 @ 10 *9
* TT @ expȧ* ȧ XTI + 3.710244 (3.132)

+0
Ȣ TT
Ȥ In Table 13, the values of EG and XTI from each method
(3.128) are listed along with the diode voltage calculated at a current
From Newton’s method, the value of TT that satisfies this of 1.0 A for 27C and 100C, and the saturation current
equation is found to be parameter IS calculated at 150C. With the value of XTI
TT + 32.96688 nseconds (3.129) obtained from Method 2, it is seen that the value of the TCV
is close to that computed from the data sheet given in
Equation 3.130. However, IS and, consequently, IR
Temperature Characteristics (EG, XTI)
The temperature characteristics of the MURH840CT are calculated at 150C is found to be much larger than the
illustrated in Figures 68 and 69. Even though only three maximum value of IR specified at this temperature which is
temperature points are given on these two plots, there is 500 µA. By using IR data over temperature to extract XTI as
sufficient data available to allow the parameters EG and XTI was done with Method 3, IS at 150C is found to be very
to be extracted with Methods 2 and 3. Since information close to IR at the same temperature as shown in Figure 69.
about the small–scale voltage temperature coefficient is not The value of the TCV computed with this XTI is. however,
known, Method 1 will not be used. not as accurate that produced by the XTI of Method 2.
1. Method 2 (Large–scale TCV method). The Again, the specification for maximum IR will be observed
large–scale TCV is obtained from the and XTI computed by Method 3 given in Equation 3.132
forward–bias I–V curve of Figure 68. At a forward will be used.
current (ID) of 1.0 A, the diode voltages at 25C Table 13. Comparison of Temperature Characteristics
(To) and 100C (T1) are read as 0.973 V (VF(To))
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Method
and 0.776V (VF(T1)), respectively. The value of Parameter

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
the large–scale TCV is calculated from Equation or Variable 2 3 Units

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
3.84 where EG 1.11 1.11 eV
TCV + *2.62667 mVń°C

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
(3.130) XTI 23.702105 3.710244

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Selecting the value for the energy gap parameter EG VF (27C) 1.024041 1.024041 V
as 1.1.1 eV which is typical for silicon, the value for

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
VF (150C) 0.827068 0.966944 V
the parameter XTI is computed from equation (85)

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
as TCV –2.698264 –0.782152 mV/C

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
XTI + 23.702105 (3.131) IS (150C) 2.989445 m 300.0 A

100.00 1000
500
150°C
10.00 100°C 200
IR, Reverse Current (µA)
IFM, Forward Current (R)

100

25°C 50 100°C
1.00
20
10
100.00m 5 25°C
2
1
10.00m
0.5
0.2
1.00m 0.1
0.00 500.00m 1.00 1.500 2.00 2.50 1 50 100 150 200 250 300 350 400
VFM, Forward Voltage (V) VR, Reverse Voltage (V)
Figure 68. MURH840CT Forward–bias Voltage Figure 69. MURH840CT Reverse Leakage Current
Temperature Characteristics Temperature Characteristics.

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Rectifier Applications

Reverse Breakdown Characteristics (BV, IBV) Summary


The maximum dc blocking voltage VR(max) for this To summarize the extraction process, all SPICE parameters
device is read from the data sheet as 400.0 V. Using a for the MURH840CT are listed in Table 14. Characteristic
guard–band multiplier kBR of 1.3, the breakdown voltage plots generated by the SPICE diode model using these
parameter BV is calculated from Equation 3.88 to be parameters are shown in Figures 70a) through (d).
The SPICE diode model has been shown to consist of a set
of equations and parameters derived from the theory
BV + 520.0 V (3.133) developed for an ideal diode. Certain modifications of these
equations allow the model added accuracy in the simulation
For a maximum simulation temperature of 150C, the of real diodes. Although the model has some limitations, it
current at the breakdown voltage IBV is calculated from can be used to realistically model the behavior of most
Equation 3.89 as semiconductor pn junction devices which include
low~current integrated circuit diodes, high–current
rectifiers, varactor diodes, Zener diodes, and Schottky
IBV + 4.279703 A (3.134) barrier diodes.

100 1000

10
IFM, Forward Current (R)

CJ, Capacitance (PF) 100


1

27°C 100°C
0.1
10

0.01

0.001 1
0 0.5 1.0 1.5 2.0 2.5 .01 0.1 1.0 10 100
VFM, Forward Voltage (V) VR, Reverse Voltage (V)
(a) (b)

1000 0
IS, Saturation Current (A)

100 5
IR, Reverse Current (A)

10 10

1 15

0.1 20
0 25 50 75 100 125 150 600 500 400 300 200 100 0.00
TJ, Junction Temperature (°C) VR, Reverse Voltage (V)
(c) (d)

Figure 70. (a) MURH840CT SPICE Model Forward Voltage DC Characteristics at 275C and 1005C;
(b) MURH840CT SPICE Model Reverse–bias C–V Characteristics;
(c) MURH840CT SPICE Model Reverse Leakage Current Characteristics;
(d) MURH840CT SPICE Model Reverse Breakdown Characteristics

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Rectifier Applications

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Table 14. SPICE Diode Model Parameters for the MURH840CT

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Name Parameter MURH840CT Value Units

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
IS Saturation current 3.0 µ A

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
RS Ohmic resistance 42.07777 m ohm

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
N Emission coefficient 2.986477

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
TT Forward transit time 32.96688 n sec

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
CJO Zero–bias junction capacitance 155.9821 p F

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
VJ Contact potential 0.2159243 V

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
M Junction capacitance grading exponent 0.4082637

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
EG Energy gap 1.11 eV

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
XTI IS temperature exponent 3.710244

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
KF Flicker noise coefficient 0

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
AF Flicker noise exponent 1.0

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
FC CJ forward–bias coefficient 0.5

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
BV
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Reverse breakdown

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
IBV Current at BV
520.0
4.279703
V
A

References 6. P. Antognetti and G. Massobrio, Semiconductor


1. A. S. Grove, Physics and Technology of Device Modeling With SPICE, McGraw–Hill Book
Semiconductor Devices, John Wiley and Sons, Co., Inc., New York, NY, 1988.
Inc., New York, NY, 1967. 7. C. F. Gerald, Applied Numerical Analysis,
2. A. Bar–Lev, Semiconductors and Electronic Addison–Wesley Publishing Co.. Reading, MA,
Devices, Prentice–Hall International, Inc., London 1970.
England, 1979.
8. B. Miller, “Curve Fitting Made Easy”, RF Design,
3. U. S. Muller and T. I. Kamins, Device Electronics
Vol. 13, No. 6, June 1990, pp. 27 to 32.
for Integrated Circuits, John Wiley and Sons, Inc.,
9. B. A. Leinfelder, “Improving PN Junction Reverse
New York, NY, 1977.
4. B. G. Streetman, Solid State Electronic Devices. Recovery Measurements”, PCIM, Part 1, January
Second Edition, Prentice–Hall Inc., Englewood 1988, pp. 41 to 44; Part 2, February 1988, Pp. 43
Cliffs, NJ, 1980. to 45; Part 3, March 1988, pp. 52 to 54.
5. SPICE 2 User s Guide. University of California 10. Rectifiers and Zener Diodes Data Book, Technical
Berkeley, Electronics Research Labs, Berkeley, Information Center, ON Semiconductor, Inc.,
CA. 1987.

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Chapter 4

Rectifier Diode Specifications and Ratings

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Rectifier Applications




 


  

Understanding the electrical and thermal characteristics chapter, tests from the Standard are referred to as “Standard
discussed earlier is helpful in design work. However, diodes Tests.”
are tested by the manufacturer and ratings are based on Since the Standard has changed from previous issues, past
compliance to given specifications. Therefore, a thorough practices are noted because many rectifiers used today were
understanding of the meaning and significance of registered years ago. In addition, background information is
specifications and the development of ratings is mandatory given so that future changes may be understood.
if devices are to be used reliably and economically. Table 15 indicates the JEDEC symbols and terms used.
The terms are also defined on the waveforms of Figure 71.
Specification formats for rectifier diodes are established
The waveform sketches are typical of operation in a
by the rectifier JEDEC1 committee for registered part
half–wave rectifier circuit driven from a sine wave source,
numbers, that is, 1NXXXX numbers. Although
which is the traditional basis of rating rectifier diodes. Two
non–registered house–numbered parts do not always cycles of normal operation are shown followed by a
conform to the registration specification requirements, the half–cycle current surge of peak value ISFM. All values of
JEDEC specifications generally are used as guidelines. terms are referenced to the zero baseline. Instantaneous
Furthermore, adherence to letter symbols and definitions as values of iF, vF and pF are shown at arbitrary times t1 and t2
developed by JEDEC is widespread, although they have on the waveforms; the other terms apply at specific points.
changed in the past and will undoubtedly change in the In general, the subscripts carry a consistent meaning
future. The information presented is based on the present throughout the waveforms. M stands for maximum or peak,
status of the standard ANSI–EIA–282–A–19891, which is S stands for surge, a nonrepetitive event, F stands for
referred to in this chapter as “The Standard.” The Standard forward, and (AV) stands for an average value, sometimes
was developed by the JEDEC Committee on Rectifier referred to as a dc value. R has a dual meaning: when
Diodes and Thyristors and approved by ANSI in September following the primary symbol (i.e. I, V, P or T) such as in IR
1989. it stands for reverse; when preceding the subscript M, it
The Standard contains an extensive section on testing. stands for repetitive. A few exceptions occur to the
nomenclature scheme and some terms can’t be shown on the
Most of the tests described are not used for high volume
waveforms; these cases are described in Table 15.
production, but are chosen to insure that a rectifier diode is
capable of meeting its ratings in a low–frequency, usually 1JointElectron Device Engineering Council of the Electronic
60 Hz powerline application. These tests are intended to be Industries Association (ETA) and National Electrical
used to verify the specifications of JEDEC registered part Manufacturers Association (NEMA).
numbers and may be considered “referee” tests. In this

Table 15. JEDEC Letter Symbols for Rectifier Specifications


Voltage Current Power Dissipation Junction
Forward Reverse Forward Reverse Forward Reverse Temperature

Total RMS VF(RMS) VF(RMS) IF(RMS) IR(RMS) – – –


Alternating Component RMS Vf Vr If Ir – – –
DC (No AC) VF VR IF IR PF PR TJ
DC (With AC) VF(AV) RV(AV) IF(AV) IR(AV) PF(AV) PR(AV) TJ(AV)
I0(1)
Instantaneous Total Value VF VR iF iR pF pR tJ
Maximum (Peak) VFM VRM IFM IRM PFM PRM TJM
Specific Maximum Peak Total2
Repetitive – VRRM IFRM IRRM – – TJRM
VRWM IFSM
Non–repetitive – VRSM IFM(OV) IRSM – – *TJSM
Special cases3 TJFRM
TJRWM
TJFSM
1. Rectified Output Current, Average 180 Conduction Angle. 50 or 60Hz, Sine Wave Input
2. Primarily used for ratings, see text
3. Primarily used in developing current ratings, see Figure 71 and text.

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Rectifier Applications

Historically the major use of rectifiers is in the conversion Peak junction temperature, particularly in applications
of 60 Hz supply line voltage to direct current; consequently, where the diode handles short duration pulses, can be
the earliest JEDEC specifications consisted simply of a considerably higher than the average temperature. To
current rating, a voltage rating, and some measurement of calculate peak temperature, the superposition technique is
reverse current and forward voltage. Presently thermal and commonly used with a curve of transient thermal impedance
reverse recovery data is also required on all rectifier diodes or thermal response as described in Chapter 2. Not all classes
because of their widespread use in power electronics. of rectifier diodes are presently required by JEDEC to
Graphs of the characteristics specified, showing the effect of specify transient thermal impedance, but manufacturers
voltage, current, and temperature, are frequently given on usually publish a thermal response curve on data sheets.
manufacturers’ data sheets. Some data sheets contain a specification called “apparent
Various specifications (generally referred to as specs) in thermal resistance” which applies for a particular periodic
common use are examined in this section. Their main waveform of forward current. Apparent thermal resistance
purpose is to insure that the rectifier meets its current and is calculated such that the peak temperature is obtained by
voltage ratings and to insure interchangeability of parts from multiplying the apparent thermal resistance by the average
different manufacturers. power produced by the waveform.
Temperature A typical thermal resistance or transient thermal
Temperature is the fundamental limiting factor of rectifier impedance test fixture uses the test diode’s forward voltage
diode power handling capability. Manufacturers establish at a low “metering” current as an indicator of junction
current and voltage ratings to insure long life using various temperature. A switching circuit alternately applies a high
criteria, but temperature is implicit in the ratings. current pulse followed by the metering current. For
The maximum and minimum storage temperatures (Tstg) obtaining thermal resistance, the duty cycle of the high
simply define the temperature range allowable during current pulse is nearly 100%. A measurement of the diode
storage. Excessively hot temperatures can damage the “metering voltage” permits thermal resistance to be
die–to–case bond or damage the package or alter electrical calculated. Two approaches find use in determining thermal
or thermal characteristics, which result in a field failure response. The first uses high–power single–shot pulses of
when the diode is placed into operation. Excessively cold varying width followed by a measurement of the metering
temperature can cause cracking of the chip with subsequent voltage. The second applies a pulse long enough to achieve
voltage degradation or catastrophic failure. Minimum steady state conditions; after the current drops to the
operating temperatures are usually the same as minimum metering level, the cooling curve is recorded by capturing
storage temperatures. the change in forward voltage vs. time. Thermal
The maximum repetitive peak temperature TJRRM is the characteristics tests require judgment regarding the most
temperature used to establish VRRM. It usually is stated on appropriate technique and circuit to use as well as attention
data sheets as TJ(MAX). to numerous details, which are discussed in “The Standard.”
The maximum peak values TJSM and TJFRM, though
Voltage Ratings
generally not stated, are factors in determining the surge
Voltage ratings are not a characteristic; they cannot be
ratings and the average current ratings with capacitive or
measured but are assigned by the device manufacturer and
high form factor loads which cause high peak power
apply over the entire temperature operating range of the
dissipation. The peak temperature limits are useful in
device. Ratings should not be exceeded under any
calculating operating limits under unusual pulse or transient
circumstances. All ‘repetitive ratings are referenced to a
conditions; manufacturers usually provide these limits upon
half–wave 60 Hz rectifier circuit using a resistive load.
request. Temperature ratings during forward current
The first three ratings to be discussed are generally
conduction are usually higher than those applicable when a
specified with the same numbers for a particular rectifier.
reverse voltage is present, because the combined stress of
Although the theoretical basis of peak reverse voltage
temperature and voltage is the most sensitive chip failure
ratings is the maximum reverse power generation
mode.
permissible before thermal runaway2 is reached, these
Thermal Resistance ratings are frequently limited for other reasons, such as an
Older rectifier diodes do not have thermal resistance abrupt change in slope of the V/I curve, surface effects, or
specified since the current rating alone as a function of diode instability of the V/I curve. Voltage ratings are generally
reference temperature is a sufficient guide to operation in 60 well below avalanche breakdown voltage, but they may be
Hz rectifier currents. Diodes in power electronics circuits, a limiting factor at low temperatures.
however, experience a variety of waveforms not covered by
2Voltage ratings generally apply when maximum rated forward
commonly published current derating curves. In order for
current is flowing. Under this condition the thermal resistance,
designers to compute average junction temperature, thermal junction–to–ambient is necessarily rather low which prevents
resistance is required and has been a JEDEC requirement for thermal runaway. However, thermal runaway can occur well below
a number of years. rated voltage if R
JA and TA are relatively high.

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Rectifier Applications

The equipment designer has the responsibility for the rectifier diode, a markedly increased probability of
determining that none of the reverse voltage ratings of the failure exists. The ratings do not imply any safety factor.
device are exceeded under any possible combination of Figure 71 illustrates the various voltages applicable to
operating or environmental conditions. If voltages rectifier diodes.
exceeding any of the reverse voltage ratings are applied to
TJSM

TJRM
TJ TJFRM
TJ(AV)
TJRRM

iF
iF
0
VFM
VFM
VF
VF VF(AV)
0
PF PFM
PF
PF(AV)
0

0
VR(AV)
VR

VRRM
VRSM
iR 0 iR(AV)
iR iRM

Figure 71. Illustration of JEDEC Letter Symbols. Sketches show Reverse and Forward Voltage and Current and
Junction Temperature Excursion Resulting from the Developed Power

Peak Repetitive Reverse Voltage (VRRM) 60 Hz rectifier circuit with resistive load and applies over the
The rated peak repetitive reverse voltage (VRRM) is the entire operating temperature range.
maximum allowable instantaneous value of the reverse DC Reverse Blocking Voltage (VR)
voltage, including all repetitive transient voltages, but The rated maximum dc reverse blocking voltage is the
excluding all nonrepetitive transient voltages that occurs maximum allowable de reverse voltage, excluding all
across a rectifier diode. To verify the rating, a pulse of 100 repetitive and nonrepetitive transient voltages, across a
ms at a 60 Hz rate is used. The peak repetitive reverse voltage rectifier diode. The rating applies over the entire operating
which occurs in a circuit is caused by rectifier diode temperature range specified. Values for VR are usually the
properties in conjunction with circuit constants and is, to same as VRWM. but VR may be restricted to operation at a
some extent, under the control of the equipment designer. lower temperature than VRWM.
VRRM is a periodic voltage which includes commutation
Peak Nonrepetitive Reverse Voltage (VRSM)
spikes and inductive kicks which occur each cycle.
The rated peak nonrepetitive reverse voltage (VRSM) is
the maximum allowable instantaneous value of reverse
Peak Working Reverse Voltage (VRWM) voltage across the rectifier, including all nonrepetitive
The rated peak working reverse voltage (VRWM) is the transient voltages but excluding all repetitive transient
maximum allowable instantaneous value of the reverse voltages. The rating applies over the entire operating
voltage that occurs across a rectifier diode, excluding all temperature range. The nonrepetitive peak reverse voltage
repetitive and nonrepetitive transient voltages. The input occurs as a random circuit transient, which may originate
voltage to the circuit must be such that the peak inverse within the equipment or be externally generated. Transient
voltage applied to the rectifier does not exceed rated VRWM. voltages may be minimized by transient voltage
The rating is generally based upon operation in a half–wave surge–suppression components, as discussed in Chapter 9.

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Rectifier Applications

Reverse Current controlling the case temperature to within a few degrees. If


Reverse leakage current is so low with the majority of temperature control is not used, the inevitable differences in
silicon p–n junction rectifier diodes that it plays no role in forward power dissipation between parts will cause
design. In these cases, reverse leakage specifications are significant changes in case and junction temperature as
used to verify voltage ratings. However, the processing used different parts are tested. The resulting data would be useless
to reduce lifetime in the manufacturing of ultrafast diodes because of the strong dependence of IR upon TJ.
causes a marked increase in reverse leakage current. Consequently IRRM is the preferred reverse current
Schottky diodes also naturally exhibit high reverse leakage. specification.
Consequently, designs using fast diodes must include a
thermal runaway analysis and accurate reverse current data DC Reverse Current (IR)
is essential. The following reverse current specifications are The specified dc reverse current is the value of reverse
found on manufacturer’s data sheets. current through the rectifier under stated conditions of rated
dc reverse voltage (VR) and case temperature. At one time,
Maximum or Peak Reverse Current (IRRM) the temperature specified was required by JEDEC to be at
The maximum reverse current specified is the peak the maximum operating temperature, but, because of
reverse current through the rectifier with a half cycle of 60 thermal runaway problems, it may now be specified at a
Hz sinusoidal rated reverse voltage (VRWM) applied at lower temperature. Sometimes dc reverse current at room
maximum operating temperature – i.e., the case or lead temperature is added to diode specifications by
temperature at which the forward current is derated to zero, manufacturers, but it is measured in production using a
If reverse power is negligible, the maximum operating pulse.
temperature is equivalent to TJRRM.
In production, IRRM is generally measured at room Reverse Breakdown Voltage V(BR)
temperature using a pulse technique because it can be done Breakdown voltage is not specified on rectifier diodes
quickly even though high–temperature leakage is not unless the diode is a controlled avalanche type. For the
predicted well by low–temperature measurements. The nonavalanche diode, verification of reverse voltage ratings
manufacturer relies primarily on test data correlating high– is done by means of a reverse leakage current test
and low–temperature leakage and on sample testing of Controlled avalanche diodes have two values of
production lots to insure compliance to the registered high “breakdown” voltage specified.
temperature limits. The first is a minimum breakdown specified at a low
current chosen to place operation in the breakdown region
Average Reverse Current IR(AV) near the “knee.” It may be performed using either a dc, ac,
The average reverse current specified is the value of or pulsed signal source, but production testing favors use of
reverse leakage current averaged over one complete 60 Hz a short pulse at a low duty cycle. Normal circuit operating
cycle under the stated conditions of reverse voltage and case voltages should be below the minimum breakdown voltage.
temperature. Rated forward current may also be applied as The second breakdown test is designed to verify the peak
an option. This specification serves as a comparison of the reverse power dissipation specified for a controlled
rectifier to an ideal switch of zero leakage in the open avalanche rectifier. The standard test consists of
position. superimposing a transient voltage to a diode which is biased
Measurement of IR(AV) does not blend with a production to rated VRWM. The series impedance and transient source
environment and is not specified on modem diodes. Older voltage are adjusted until the product of reverse voltage and
registered parts often specified IR(AV) usually with forward reverse current equals the specified peak reverse power
current applied. Its measurement requires use of a dynamic dissipation of the diode. In production, a constant current
load test circuit which simulates operation in a half–wave pulse is applied to all diodes even though the higher voltage
rectifier circuit at rated conditions, If accurate dynamic load units will be stressed beyond their published ratings because
test data is to be retrieved, the diode must be mounted on a adjustments are too labor intensive and fraught with chances
substantial heat sink having some external means of for error.

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Rectifier Applications

Forward Voltage
In order to establish current ratings as a function of
reference temperature, a curve of forward voltage (VF) vs.
forward current is required. To control VF a specification at
one point is required for JEDEC registered part numbers.
IFM
Manufacturers generally follow the JEDEC requirements
for house–numbered parts and often provide supplemental
information. iF
IF(AV)
Maximum (Peak) Forward Voltage (VFM)
The specified maximum forward voltage is the peak
forward voltage across the rectifier under the same stated
conditions of current and case or lead temperature used for
the forward current rating (IO). VFM may be measured using
either a 60 Hz half sine wave continuous current or a pulse
VF(AV) VFM2
technique to keep junction heating negligible. Using the half
sine wave, the temperature of the heat sink must be VFM1
controlled by external means so that variations in power
dissipation between parts do not influence case temperature, Figure 72. Two Rectifier Forward Voltage Curves
which is to be held to that specified for IO. Showing Difficulty of Controlling Rectifier Power
Dissipation by Limiting Average Voltage
With the pulse method, no heat sink or complicated
temperature control is necessary and, consequently, it is DC Forward Voltage (VF)
more practical to use in production testing. A pulse width The dc forward voltage is the forward voltage across the
under 1 ms at a duty cycle under 2% is specified. Testing at rectifier for a given dc current and case temperature. This
the peak current for which the rectifier is specified, i.e., πIO spec appears on older data sheets, but it does not adequately
is required to insure that the power dissipation will always control VFM and requires case temperature control for
be below a certain limit, in order that temperature limits accuracy.
(TJFRM or TJRRM) will not be exceeded when operating at
rated conditions. Forward Power Dissipation
The pulse test is performed at 25C (room temperature). For convenience of the designer, data sheets usually show
The limit assigned to VFM when measured with the pulse test a plot of average forward power dissipation versus average
is different than that assigned with the 60 Hz test at elevated forward current for various conduction angles. Data can be
case temperature in order to account for the temperature obtained by measurement or values may be obtained by
coefficient of forward voltage, θV. Since parts from a using one of several methods of calculation. The methods
particular product line exhibit a consistent θV, a room trade off accuracy for simplicity and range from the watt per
temperature VFM test assures high temperature behavior. amp “rule of thumb”3 to integration techniques requiring the
use of a computer.
Average Forward Voltage (VF(AV)) Power dissipation may be measured by utilizing the
The specified average forward voltage is the forward thermal resistance of the heat sink system. A thermocouple
voltage across the rectifier averaged over one complete is attached to a convenient place on the rectifier case or the
cycle under the same stated conditions of average forward heat sink, and the ac current is applied to the input of a
current and temperature used for establishing the current suitable rectifier circuit, preferably the one intended for end
rating of the part. VF(AV) is measured in a circuit similar to use. The temperature and average current levels are recorded
that used for VFM except that an average reading dc meter after thermal stability is achieved. Next, dc current is applied
is used instead of a peak reading meter. and its level adjusted until the temperature equals that
As previously discussed, temperature control is a problem obtained during the previous measurement. The forward
with the 60 Hz load test; furthermore, this measurement does drop is now easily measured and used to compute power.
not necessarily guarantee that the power dissipation will be This measurement technique is particularly useful when
below the limit necessary to keep temperature limits from operation is desired at frequencies where the transient power
being exceeded. This problem is illustrated by the sketch of losses of the diode must be considered.
Figure 72. Two rectifiers having different forward 3The watt per amp “rule of thumb” is based on the assumption that
characteristics are shown by curves 1 and 2. Both have the for any given value of average current, the average forward
same VF(AV) but the rectifier of curve 2 has a higher VFM; voltage is one volt. This approximation is conservative at small
forward currents and optimistic at the high values. it does,
it will have higher power dissipation than rectifier 1. As a however, provide a reasonable guess of average power without
result, VF(AV) is no longer a required JEDEC spec and is seen knowing the forward voltage characteristic, providing the
only on older data sheets. conduction angle is close to 1800.

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Rectifier Applications

Calculation of ac power losses is complicated by the Since


nonlinear V–I characteristic of semiconductor diodes. If i + IM sin t
diodes were to have a constant voltage drop with current, the
power waveform would naturally be a sine wave for sine PF(AV) + 1
2
ŕOπivd

wave currents. At low currents, the diode drop varies little

ƪŕ ŕ ƫ
with current; consequently, the power is nearly sinusoidal. π π
At high currents, the resistance of the diode becomes + 1 VOIM sin
) mI 2 sin 2
d

2 (4.1)
dominant, producing a power waveform which approaches O O M
the sine–squared waveshape, typical of a resistance. To Integration and substitution yield
show this behavior, Figure 73 compares actual diode power 2
V I mI
waveforms at a low and a high level to sine and sine squared PF(AV) + O M ) M (4.2)
 4
functions.
The offset voltage–straight line approximation is fairly
The most accurate way to solve for average power
accurate when the peak forward voltage is in the linear
dissipation is to use a computer in a piecewise integration. region of the VF – iF curve. In the nonlinear or exponential
The computer is programmed to break the current sine wave region, this approach can be used if a different slope and
into a series of small equal increments. Power for each offset are determined for each value of forward current.
increment is found by programming the computer to Such a determination is an ideal task for a computer. The
multiply VF – iF data obtained by interpolation of data result is nearly as accurate as piecewise integration, but the
points. The average power dissipation is the sum of these program requires considerably less computer time than
increments divided by the number of increments times the piecewise integration.
period of the waveform. Accuracy improves with the
number of increments used. As a guide, average power
dissipation will be accurate to better than 1% if the wave is
broken into 20 equal increments and 25 data points are used
to define the forward voltage curve. IFM

Slope = m

I’F
1.0
Sine
Actual, IFM = 4 A
0.8
Actual, IFM = 30 A
Sine2
Relative Value

0.6

VO V’F VFM
0.4
Figure 74. Approximation of a Diode Forward
Characteristic for Accurate Calculation of Power
0.2
Loss when Handling a Sinusoidal Current Waveform

0 The computer is fed VF – iF data and programmed to


0 20 40 60 80 100 120 140 160 180
linearly interpolate between points as in the piecewise
Conduction Angle in Degrees
method. Based on the sine wave peak value and a percentage
Figure 73. Actual Diode Power Waveforms of peak value, the computer solves for two VF values, i.e.,
Compared to Sine Squared Waveforms for Half–Sine for IFM and IF. VFM and VF are determined from the diode
Wave Currents forward voltage curve as shown in Figure 74. Using these
two values of forward voltage the slope and offset voltage
are found from:
Another method of obtaining average power dissipation is
V * VȀF
to approximate the forward voltage curve with an offset m + FM (4.3)
IFM * IȀF
voltage and a straight line as shown in Figure 74; thus,
V = VO + mi, where m is the dynamic resistance of the and
diode. VO + VFM * IFMm (4.4)

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Rectifier Applications

Values calculated from Equations 4.3 and 4.4 are used in Current Ratings
Equation 4.2 to find power at each current level. Best Of paramount importance are a rectifier diode’s current
accuracy generally occurs when IF = 0.9 IFM since the major ratings. Current ratings are conditional ratings – dependent
portion of the sine wave’s energy is then between IF and upon the diode’s case or lead temperature and the waveform
IFM. being handled.
Of the methods used to calculate the power dissipation in Several temperature limits play roles in limiting the
a rectifier, the easiest and most conservative method makes current that a rectifier diode may handle. Some are indicated
the assumption that the power dissipation waveform is on Figure 71, which shows the junction temperature of a
sinusoidal. Thus, the average power dissipation is found as rectifier diode operating in a resistively loaded, half–wave,
follows: single–phase circuit under steady state conditions followed
π

2 O
ŕ
PF(AV) + 1 PM sin
d
+ PM (4.5)
by a current surge. In addition, electro–migration may set a
limit upon the current which a diode can conduct on a
continuous basis.
where PM + IFM VFM. The repetitive peak junction temperature TJFRM sets one
For convenience in calculating power dissipation, limit upon rectifier current ratings. If exceeded, the die bond
Figures 75 and 76 permit form factor and peak to average may be weakened, resulting in an eventual field failure. The
values to be found for a number of commonly used limit of TJFRM depends upon the manufacturers’ assembly
waveforms. technique. The temperature caused by the circuit depends
upon the amplitude and waveshape of the pulse train and the
Form Factor, Ratio of rms to Average Values

10 transient thermal impedance of the rectifier.


Another limit is set by TJRRM (often called TJ(max)), which
7.0
a is the temperature used for determining the voltage rating.
5.0 Note that TJRRM is lower than TJ(AV) for sine wave
rectification shown in Figure 71. In practice the values of
a
Half–Wave
TJRRM and TJ(AV) are close together.
3.0 A third limit on the rectifier diode’s current rating is the
a temperature at which the lead material from the die to the
2.0 terminal fuses or becomes excessively hot. Lead
temperature is a function of the lead material resistivity and
a the rms value of forward current.
Full–Wave The junction temperatures, TJFRM and TJRRM, the lead
1.0 fusing temperature and electro–migration must all be
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
a, Conduction Angle (Degrees)
considered in determining a current rating. Since one or the
other will limit current at different operating conditions,
Figure 75. Form Factor for Various Current manufacturers often provide curves to aid in determining
Waveforms satisfactory operating limits.
A final temperature limit is the peak surge junction
100
temperature, TJSM which is somewhat above the other
70
temperature limits. The surge is allowed only a few times
Ratio of Peak to Average Values

50
(few being defined by JEDEC as less than 100) during a
a
30 rectifier diode’s life. The surge temperature is the basis for
20
a
the IFSM rating.
Half–Wave
10
7.0 a
5.0
3.0
2.0

1.0
10 20 30 50 70 100 200
a, Conduction Angle (Degrees)

Figure 76. Peak to Average Ratios for Various


Current Waveforms

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Rectifier Applications

Average Forward Current (IO) same rms limit; that is, for IFM/IF(AV) = 20, read a = 28 from
It is customary, as well as a prior JEDEC requirement, to Figure 76. At this angle, read F ≈ 3.9 from Figure 75;
rate rectifiers in terms of average current delivered to a therefore, IF(AV) = 39.3/3.9 ≈ 10 A, which agrees with curve
resistive load at a specified case temperature in a 60 Hz 6 on Figure 77. Consequently, derating curves for
half–wave circuit, unless another frequency is specified. waveforms other than the ones shown could easily be
(The 1989 version of Standard 282 indicates that the ratings determined by using the data of Figures 75 and 76 to obtain
are to apply for input frequencies from 50 to 400 Hz). The the rms limit and by using the given derating curves as a
rated current is defined as IO. The usual basis for this rating guide.
is that tJ below TJRRM when VRWM is applied. The reference Sine wave derating data is based upon tJ = rated TJRRM a
temperature used for the IO rating is presently required by short time after cessation of forward conduction. The dc
JEDEC to be chosen approximately 50C plus or minus derating curve, curve 1 on Figure 77 and the square wave
25C lower than TJRRM. derating curve, curve 2, are based upon TJRFM equaling
It is safe to assume that IO is also an rms limit when rated TJRRM because the full reverse voltage may appear
estimating current ratings for capacitive loads or other loads immediately after forward conduction ceases. Note that the
having a high form factor (ratio of tins to average current); square wave curve, curve 2, is very close to the sine wave
however, such an assumption may unduly restrict the resistive load derating data; however, the average current
usefulness of a particular rectifier. Form factor and limit is at 28 A rather than 25 A, since I(RMS)/I(AV) = 1.41 for
peak–to–average ratio data are shown in Figures 75 and 76 a square wave.
as functions of conduction angles for commonly Derating data for a lead–mounted rectifier is shown in
encountered rectifier waveforms. The data are useful in Figure 78. Since no rms limit is indicated, it can be assumed
establishing current ratings for conditions other than the that it is greater than (3.9)(4.3) or 18.5 A by using data for
ones specified. IFM/I(AV) = 20 from Figures 75, 76 and 78. Therefore, other
Figure 77 is an example of current derating data for a stud– waveforms having a rms value below 18.5 A could be safely
or case–mounted rectifier. The dc (rms) limit is called out at handled by the rectifier. For these other waveforms, it is
39.3 A. A check of the curve data against the data of Figures appropriate to use the techniques outlined in Chapter 2 to
75 and 76 reveals that the flat portion of the curves shows the check for TJFRM. It should be held to a reasonable limit.

28 7.0
IF(AV), Average Forward Current (Amp)

3 IFM
IF(AV), Average Forward Current (Amp)

2 dc, Continuous
1 (Max IOC = 39.3 A = π (Resistive/Inductive Loads
24 6.0 IF(AV)
4 Sine Wave
Resistive Load 5
20 5.0 Capacitive
10 Loads
Square 20
16 5 Wave 4.0

12 6 3.0

8.0 Sine Wave 2.0 Both Leads


Capacitive IFM = 20 10 5.0 To Heat Sink
Loads IF(AV)
4.0 1.0
Curves Apply When Reverse Power is Negligible
0 0
75 85 95 105 115 125 75 85 95 105 115 125 135 145 155 165 175
TC, Case Temperature (°C) TL, Lead Temperature (°C)

Figure 77. Example of Current Derating Data where Figure 78. Example of Current Data for a Rectifier
RMS Limits are Evident as Flat Portions of the which does not show an RMS Limit
Curves

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Rectifier Applications

Peak Surge Forward Current (IFSM) Multicycle surge data is used most often to select
The maximum allowable surge current (IFSM) is the peak properly rated circuit breakers and/or to provide
current that the rectifier can safely handle for a minimum of sufficient series impedance to prevent diode damage
100 times in its lifetime. It is a nonrepetitive rating in the should a load fault occur. Another common use for
sense that the surge may not be repeated until thermal overload data is to check rectifier operation in a line
equilibrium conditions have been restored. operated circuit with a capacitive input filter, as shown by
An illustration of the JEDEC specified conditions is the circuit of Figure 81(a). Worst–case current surges
shown in Figure 79. The rectifier is subjected to rated occur when the switch is closed as the input sine wave
voltage and current until thermal equilibrium is established
approaches its positive peak (Figure 81(b)). The
at the rated case temperature. One half–cycle of surge
waveform should be compared to the overload rating
current, IFSM. is applied, followed by one half–cycle of
curve. In many cases a visual comparison of the current
nonrepetitive rated–voltage, VRSM. If the junction
temperature is driven too high by the current, thermal surges is all that is necessary. For example, the rectifier
runaway will occur and the rectifier will be destroyed. having the surge ratings of Figure 80 will handle two
In some applications, such as motor control, several surges of 80 A each when TJ = 175C or 120 A when TJ =
cycles of surge current called overload current I(ov) must be 25C. The circuit current peaks of Figure 81(b) are 110 A
handled. To illustrate overload capability, data similar to for the first pulse and 60 A for the second one; the other
that of Figure 80 are given on many data sheets. During pulses are so low by comparison that they need not be
each cycle of overload, peak reverse voltage must not considered. Unless the rectifier is used near its upper
exceed VRWM. The intent of the JEDEC specification is to temperature limit of 175C, operation is safe and no
have tJ at its rated repetitive limit prior to the nonrepetitive further checking is necessary.
surge. To provide additional information, surge and
overload data are often given for the situation when the
diode is in a circuit that is turned on at room temperature
(the 25C curves in Figure 80).

Surge Current, IFSM


Forward Currebt

Rated Forward Current, IO Rated Forward Current, IO

1/60 Sec.
Reverse Voltage

Working Peak reverse Working Peak reverse


Voltage, VRWM Voltage, VRWM

1/2 Cycle Non–Repetitive Peak


Reverse Voltage, VRSM

Figure 79. Conditions for the JEDEC Surge Current Specification

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83
Rectifier Applications
150 When more precise information is needed, the simplest
IFSM, Peak Half Wave Current (Amp) VRWM May Be Applied
Between Each Cycle
way to match the rectifier diode capability to the circuit’s
100 TJ = 25°C demands is to convert the overload surge data of Figure 80
of Surge, TJ Noted is
80 TJ Prior to Surge and the waveform produced by the circuit (Figure 81(b)) to
175°C
60 equivalent rectangular waves using the thermal modeling
Non–Repetitive
Repetitive techniques discussed in Chapter 2. A satisfactory model is
40 obtained if the amplitude is chosen to equal 70%4 of the peak
25°C
value of the actual pulse and the width adjusted to contain the
30 same area. Therefore, the data of Figure 80 can be
175°C interpreted as applying a rectangular pulse or a train of
20 pulses having an amplitude of 70% of the sine wave peak
amplitude and a width of 5.83 ins.
15 470% is chosen because the power pulse under surge conditions
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
will be cIose to a sin2 function (see Chapter 2).
Number of Cycles at 60 Hz
Figure 80. Example of Surge Current Data (applies
for MR850 Series)

RS

C RL

(a)

120

100
IF, Forward Current (Amperes)

80

60

40

20

0 10 20 30 40 50 60 70 80 90 100
t, time (ms)
(b)

Figure 81. Start up Transients in a Half–Wave Line Operated Rectifier Circuit:


(a) Half Wave Circuit with Large Input Capacitor; (b) Worst–case Turn–on Waveform (IF(AV)=100 mA)

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Rectifier Applications

Using the methods of calculating instantaneous junction The registration requirement states that ta, tb, IRM(REC),
temperature presented in Chapter 2, the maximum and QRR and are all to have maximum limits. The test
temperatures at the end of the power pulse and at the time conditions are also specified. Suggested conditions are
when the reverse voltage reaches its peak may be calculated TC = 25C, pulse repetition rate = 60 pulses per second and
for the rectifier data and for the circuit. If the temperature di/dt = 25 A/µs. The peak forward current must be at least
allowed during surge is higher than that produced by the three times IO; the pulse width is required to be over five
circuit, satisfactory operation can be assumed. times the diode’s reverse recovery time to ensure that dud:
Rectifier diode data sheets sometimes show a subcycle is fairly linear and nearly constant through zero crossing
surge rating curve, so called because the time duration is less from IFM/4 to IRM(REC) and also to allow enough time for
than the 8.33 ms time base of a 60 Hz wave. The rating is the steady state charge gradient to be established in the
applicable for events which occur while the diode is diode. The pulse duty cycle is low to ensure negligible
operating at rated load current and working reverse voltage. heating of the diode.
However, the diode is not required to block immediately The circuit of Figure 82 is difficult to adapt to the
after the subcycle surge current ceases. The rating is useful necessary conditions required to measure ultrafast diodes,
when selecting a fast acting, current–limiting fuse for i.e., those with tRR under 100 ns. A fundamental limitation
protecting the diode during a load fault. Since fuses are rated is caused by the inductor used to generate the forward
in terms of I2t (current squared seconds) an I2t rating for the current pulse. When the diode enters the high–impedance
diode is often given in place of a subcycle rating curve. Use phase (tb) during turn–off, the circuit will ring at the resonant
of subcycle surge data is shown in Chapter 9. frequency determined by the inductor and the diode
capacitance[2]. Therefore the circuit cannot measure tb
Switching unless it is longer than the period of the resonant circuit. The
Originally switching specifications were not required on
latest version of the Standard, therefore, shows an alternate
JEDEC registered rectifier diodes, since the principal
means of driving the diode with square pulses derived from
applications were at 60 Hz. Because of the widespread use
a power MOSFET circuit. The circuit shown in Figure 83,
of rectifier diodes in power electronic equipment, reverse
allows a higher di/dt; typical of modern power electronic
recovery characteristics are presently required in order to
circuits, to be obtained and circuit inductance can be kept
better assure interchangeability in high–frequency
small.
applications. The terms used in switching specifications are
Diode reverse recovery waveforms observed in the circuit
defined in Chapter 1.
of Figure 82 typically appear as shown by one of the
Reverse Recovery sketches in Figure 84. Waveforms obtained in the circuit of
The test circuit used to obtain data and specification limits Figure 83 are similar, except the forward current pulse is
for reverse recovery usually conforms to one devised by square. At the end of the period denoted as ta, the diode
JEDEC about 1970. As shown on Figure 82, the circuit impedance begins to rise, allowing reverse current to decay.
consists of a means of discharging the energy stored in a The nature of the decay during the tb interval depends upon
capacitor though a series inductor and the diode under test. the impurity profile of the diode, the test or circuit electrical
By properly choosing circuit constants, a half–sine wave conditions and, unfortunately, the loop inductance and
pulse of forward current is passed through the diode. The parasitic elements of the circuit.
circuit can be modified to also store the charge involved If the waveform decays smoothly in a somewhat
during reverse recovery on a capacitor whose voltage will exponential manner, as shown by the waveform of
yield the reverse recovery charge, QRR. Figure 84(a), the diode is said to exhibit “soft recovery.” If,
R1 at some point during tb, the waveform exhibits a rapid
L
change in slope, as shown by the other waveforms, the
recovery is described as abrupt. Abrupt recovery is
+ C
_ D2 undesirable because it often produces circuit ringing, which
60 HZ DUT
R3 causes EMI problems in electronic equipment.
LINE
R2

D1 CURRENT
SCR
VIEWING
RESISTOR

Figure 82. Standard JEDEC Reverse


Recovery Test Circuit

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85
Rectifier Applications
V3

RL

S1
V1
t1 i

V2 S2 DUT V
t2

V4

Figure 83. Test Circuit for Ultra–Fast Rectifier Diodes

IFM IFM
tff tff
tb
ta tb
ta
0.25 Time Time
IR(Rec)
to to
IR(Rec) IR(Rec)
a) Soft Recovery b) Abrupt Recovery

tff tff
ta tb ta
tb

0.25 IR(Rec)

IR(Rec) IR(Rec)
c) Abrupt Recovery d) Abrupt Recovery

Figure 84. Test Current Waveforms for Various Types of Rectifier Diodes under
Test in the Circuit of Figure 82

To aid a designer in judging the nature of the tb waveform, The preferred measurement technique must be done
a recovery softness factor (RSF) is sometimes stated. RSF manually using an oscilloscope and consequently is not used
is the ratio of tb to ta; therefore, larger numbers imply softer in a production test environment. It is much more common
recovery. Inspection of the waveforms of Figure 84, to see recovery time measurements referenced to 10% of
however, reveals that RSF is of limited value. It does provide IRM(REC) or to a specified reverse current level.
a valid comparison of waveforms (a) and (b), but waveforms The difficulty of performing accurate recovery time
(c) and (d) yield an RSF comparable to those of the soft measurement increases with the speed of the diode.
waveform of (a), when in fact (c) and (d) are abrupt. If tb is Consequently, a method of measuring the “recovered
not accurately measured, a non–trivial task[2], then RSF is charge” QRR without measuring the reverse recovery
of no value at all. waveform has been proposed [2] and equipment is available
The waveforms of Figure 84 show a long–standing and to perform the test electronically. In addition, calculation of
still–preferred referee method of defining reverse recovery recovery time has shown good agreement with carefully
time. The method of measuring ta is uniform but the measured data for most diodes. The recovered charge is the
measurement of time tb differs depending upon the character amount of charge delivered to an external circuit by the
of the waveform. For waveforms which cross the axis diode during turn–off. It is the area under the reverse
because of circuit ringing, such as (b) and (c), tb is measured recovery waveform (see Figure 84). The electronic
from IRM(REC) to the zero crossing. For waveforms technique uses a means of transferring the recovered charge
approaching the axis asymptotically as shown by (a) and (d), to a capacitor where it is stored and whose voltage is easily
the zero crossing is determined by a straight line drawn from measured by a voltmeter. The method is described in the
IRM(REC) through the point where iRR has decayed by 75%. Standard and also in MIL–STD–750 C, method 4061.1.

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86
Rectifier Applications

Forward Recovery source, the diode and a means of measuring current. The
Forward switching characteristics are seldom specified on current source is usually obtained by adding a series
rectifier data sheets even though a diode’s turn–on behavior resistance to a voltage generator. The open circuit voltage of
is important in a number of power electronic applications the source is required to be 50 V or 3VFM, whichever is
operating at high frequencies. The reason for the absence of greater. The rise time of the input wave should be fast
forward recovery data is that manufacturers are reluctant to enough so that it does not affect the diode’s performance.
add tests not demanded by design engineers. The importance The turn–on voltage wave, with pertinent terms noted, is
of having fast turn–on and low dynamic impedance is shown on Figure 85. VFRM, tfr, and the steady state pulse
evidently not fully appreciated. voltage, VF, are specified. The measurement point VFR for
Although a forward switching test is not required on tfr is 1.1 VF when VFRM between 1.3 V and 10 V When
JEDEC registered diodes, the Standard shows a procedure VFRM exceeds 10 V, VFR is specified at 3VF. Should VFRM
for measurement and has defined terms. The test circuit is be below 1.3 V, VFR = VF + 1/2 (VFRM – VF).
very simple; it is a series loop consisting of a pulsed current

VFRM

VFR
V (1.1 VF UNLESS OTHERWISE SPECIFIED)
VF
0.1 VF

B
tfr

Figure 85. Turn–on Waveform Showing JEDEC Defined Terms.

References
1. “Standard for Silicon Rectifier Diodes,” 2. “B. Leinfelder, “Improving PN Junction Reverse
ANSI/EAI–282–A–1989, Electronic Industries Recovery Measurements,” Pans 1, 2, and 3,
Association, 2001 Pennsylvania Aye, N.W. Washington, “Powerconversion and Intelligent Motion,” Jan., Feb.,
D.C. 20006 March, 1988.

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Rectifier Applications

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Rectifier Applications

Chapter 5

Basic Single–Phase Rectifying Circuits

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Rectifier Applications

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90
Rectifier Applications


 
  

 


In this chapter, basic characteristics of single–phase The simplest circuit for rectifying single–phase
circuits with resistive loads are discussed. Polyphase alternating torrent gives half–wave rectification. Such a
circuits are treated in Chapter 6; filter design follows in circuit is indicated in Figure 86(a), where the bold–faced
Chapter 7. Results of all the calculations in this chapter are arrow represents the rectifying unit and the direction of
presented in Table 16. conventional current flow. Assume (1) an ideal AC source
without resistance, (2) the impressed emf is a pure sine
wave, (3) the rectifying unit has zero resistance in the
Basic Operation forward direction of current and infinite resistance in the
When considering any rectifying circuit, a designer reverse direction, and (4) the load is purely resistive. With
desires to know the magnitude of the direct voltage and these assumptions, let a sine wave alternating voltage as
current, the regulation of the load voltage, and the efficiency shown in Figure 86(b) be impressed across the input to the
to be expected from the rectifying process. All these values rectifying circuit. The output is a rectified half–wave of
depend upon a number of variables–such as the type of current as indicated in Figure 86(c), which is of a sine form,
circuit, the constants of the supply, the characteristics of the since i = (VM/RL) sin ωt. During the second half of the cycle
rectifying unit, and the nature of the load–which complicate the rectifier blocks current. The current flowing through the
the analytical solution. However, certain simplifying load resistance RL produces an iRL voltage drop which has
assumptions idealize the circuit so that a useful analysis can a half sine waveform. The voltage waveform across the
be made. rectifier is shown by Figure 86(e).

ÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ
Table 16. Characteristics of Basic Single–Phase Rectifier Circuit with Resistive Loads

ÁÁÁÁÁÁÁÁ Full–Wave Full–Wave

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ
Half–Wave Center–Tap Bridge

ÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
Rectifier Circuit Connection

ÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÉÉÉÉÁÁÁÁÁÁÁÁ
ÉÉÉÉÉÉÉÁÁÁÁÁÁÁÁ
ÉÉÉÉÉÉÉ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÉÉ ÉÉ ÁÁÁÁÁÁÁÁ
ÉÉÉÉÉÉÉ ÁÁÁÁÁÁÁÁ
ÉÉÉÉÉÉÉ
Load Voltage and Current Waveshape

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÉÉÉÉÁÁÁÁÁÁÁÁ
ÉÉÉÉÉÉÉÁÁÁÁÁÁÁÁ
ÉÉÉÉÉÉÉ
Characteristic

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ


Diode Average Current

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ


lF(AV)/IL(DC) 1.00 0.50 0.50

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Diode Peak Current
IFM/IF(AV) 3.14 3.14 3.14

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ
Form Factor of Diode
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
IF(RMS)/I(DC) 1.57 1.57 1.57

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ
Diode RMS Current
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
IF(RMS)/IL(DC) 1.57 0.785 0.785

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ


RMS Input Voltage Per Transformer Leg
Vi/VL(DC) 2.22 1.11 1.11

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ
Peak Inverse Voltage
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
VRRM/VL(DC) 3.14 3.14 1.57

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ


Transformer Primary Rating

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
VA/PDC 3.49 1.23 1.23

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Transformer Secondary Rating
VA/PDC 3.49 1.75 1.23

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Total RMS Ripple, % 121 48.2 48.2

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ


Lowest Ripple Frequency, fr/fi

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Rectification Ratio (Conversion Efficiency), %
1
40.6
2
81.2
2
81.2
1. P+ I 2L RL V L + I LR L

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Rectifier Applications

Current Relationships
Since the function of rectification is to convert alternating An ac ammeter inserted in the rectifying circuit of
current to direct current, the equivalent value of the direct Figure 86(a) gives a different reading from the dc meter first
current output is of primary interest. Its value is measured by considered. This difference arises because the ac meter
the dc ammeter placed in the circuit of Figure 86(a). registers effective or root–mean–square (rms) values [1]
This dc value is the average value of th6 instantaneous rather than average values. The heating or effective value of
rectified current over one cycle or a period corresponding to a current varies as the square of the instantaneous current.
2π radians. Average values can be determined by a graphical Hence, to determine the effective value of the rectified
and arithmetic process by measuring the instantaneous value current graphically, it is first necessary to plot squared
of current at a series of equally spaced points along the time values of the instantaneous current as suggested by the
axis and then dividing the sum of these values by the total dotted i2 curve on Figure 86(c). The effective area under the
number of points in a cycle. A more accurate solution may dotted i2 curve may be obtained by the graphical point
be obtained by measuring the area under the rectified current method, or by calculus:
ŕI
π
pulse and dividing by 2π. The more direct solution is to Effective area = 2
sin 2 td(t)
apply calculus to the problem, thus: 0
M

π
ƪ ƫ
I2 
+ I 2M t * sin 2t + M
ŕ IM sin td(t)
π (5.3)
2 4 2
IDC + IAV + 1 (5.1) 0
2
0
and the effective or rms current,

Ǹ
Solving,
effective area
IDC + 2IM + 0.318 IM (5.4)
(5.2) + 0.5 IM
2 2

+
V = VM sin ωt
RL 0

A

(a) (b)

V
IM i2 IM = M

ÉÉÉÉÉ
VM
i=– sin ωt RL
RL

ÉÉÉÉÉ ÉÉÉÉÉ
+
IRMS = 0.5 IM

ÉÉÉÉÉ
0 +
1 cycle IAV = 0.318 IM
2π 0

(c) (d)

V = VM sin ωt

VRRM = VM
(e)

Figure 86. Circuit and Wave Shapes for Half–Wave Rectification: (a) Half–Wave Circuit;
(b) Input Waveform; (c) Current Waveform; (d) Current Waveform with Pertinent Points Indicated;
(e) Rectifier Voltage Waveform

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Rectifier Applications

The average and effective values of rectified current for rectified, the current and voltage on the input side are normal
the half–wave circuit are indicated in Figure 86. The effective values; rms values on the output side are the same
integration of Equations 5.1 and 5.3 follow the standard as for a sine wave while the dc or average values are twice
procedures for obtaining the average and effective, values of that of a half–wave circuit. The relationships are shown in
periodic functions.: Figure 87(d).
Half–wave circuits are not used with transformers unless
current requirements are small, because the dc component of Form Factor
output current must flow through the transformer. The dc Rectifier circuit efficiencies can be related to a quantity
component causes core magnetization and high core losses termed form factor (fl. It is the ratio of the heating
result. However, the half–wave circuit finds limited use in component of a wave to the dc component:
low–current, direct–line rectification.
I
Two types of circuits are used for full–wave, single–phase F + (RMS) (5.5)
I(AV)
rectification. One circuit uses a transformer with a mid–tap
in the secondary winding, as shown in Figure 87(a). The Substituting the values from Equations 5.2 and 5.4 into
other uses a bridge configuration, shown in Figure 87(b), Equation 5.5, the form factor for a half–wave circuit is 1.57.
which requires two extra rectifier diodes, but the secondary The form factor is the same for each rectifier element in the
requires only half as much winding. Performance is similar full–wave systems because each side conducts on opposite
except that the bridge diodes are subjected to only half the half cycles. However, the form factor of the output current
peak inverse voltage of the center–tap circuit (to be of a full–wave circuit is much better. It is found from the
discussed later). Since both half–waves of current pass values shown on Figure 87; i.e., F = (0.707)1(6.636) = 1.11.
through the transformer (dividing in the secondary of the Form factor takes on significance when rectifiers must
center–tap circuit), there is no dc component of flux in the handle high peak currents at low duty cycles, since the power
transformer core to increase core losses. losses in the diodes and transformers are much higher than
Using the same assumptions made for the preceding encountered with sine wave pulses. Applications where high
half–wave rectifier circuit, the relation between the input form factors are the rule occur when capacitive input filters
and output sides of either full–wave rectifier circuit may be are used, when batteries are being charged, and when
readily calculated. Since both halves of the cycle are rectifiers are used with SCRs in phase control circuitry.

Ri
Vac
– RL + RL
– +

Vac

(a) (b)

ÉÉÉÉÉÉÉÉÉÉÉ
+ IM = VM /RL
VM V = VM sin ωt

ÉÉÉÉÉÉÉÉÉÉÉ
IRMS = 0.707 IM

ÉÉÉÉÉÉÉÉÉÉÉ
+ IAV = 0.636 IM

1 cycle 2π

(c) (d)

Figure 87. Circuit and Waveshapes for Full–Wave Rectification: (a) Center–Tap Circuit;
(b) Bridge Circuit; (c) Input Waveform; (d) Output Waveform

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Rectifier Applications

Utilization Factor Harmonics cause transformer core loss and hysteresis loss
Because of the waveforms involved in rectifier circuits, to be higher than with single–frequency operation because
transformers are not used as efficiently as when they handle these lasses increase with frequency. The extra loss caused
pure sinusoidal waveforms. A measure of rectifier circuit by the second harmonic in the resistive loaded rectifier
merit is the utilization factor (UP), defined as the ratio of the circuit is not high compared to other losses in the
dc output power to the transformer volt–ampere rating transformer and is usually neglected. ‘With other loads,
required by the primary and/or the secondary. For losses caused by harmonics can be appreciable and not only
single–phase circuits with resistive loads, the UF can be complicate transformer design but also cause trouble with
found by using the relationships between rms and average the electrical distribution system.
current. As defined,
IAVVAV
UF + (5.6) Ripple Factor
IRMSVRMS
The rectified voltage and current output consists of a
For the half–wave circuit: series of unidirectional waves or ripples. For some
UF + (0.318 IM) VDCń(0.51 IM)(2.22 VDC) applications these variations are not objectionable, but for
+ 0.286 (5.7) others they must be smoothed out by filters. For all cases, the
For a full–wave circuit, transformer utilization is much relative magnitude of the ripple is important in the
improved because conduction is continuous. In the comparison of rectifying circuits. The comparison is made
center–tap circuit, although both the secondary windings are in terms of ripple factor. Ripple factor is the ratio of effective
present, only one is used at a time. The utilization factor for value of the alternating components of the rectified voltage
the secondary is found as or current to the average value. In equation form ripple
factor is
(0.318 IM)(2)VDC
VF + + 0.572
2(0.5 IM)(1.11)VDC effective rectified ac load component IȀrms
rf + (5.7)
In the primary, the whole winding is naturally in average load current (IDC)
continuous use; the input power is, assuming a 1:1 winding
for simplicity, (√2/2)IMVi(RMS). Percent ripple is a term used interchangeably with ripple
Therefore, factor and is simply the ripple factor expressed in percent (rf
(0.318 IM)(2)VDC
X 100).
VF + + 0.812 The various components of current associated with ripple
Ǹ
( 2 ń 2)IM(1.11)VDC factor are illustrated in Figure 88. Figure 88(a) shows the
The bridge rectifier circuit has the same utilization factor single current pulse of half–wave rectification, and
as the primary of the full–wave center–tap circuit. The UP Figure 88(b) shows the splitting of the pulse into a dc
of the single–phase bridge is quite high and is only exceeded component and a ripple component. Figures 88(c) and 88(d)
by certain polyphase circuits. give an actual separation of the components, and
However, utilization factor does not tell the whole story in Figure 88(e) illustrates the components for full–wave
the case of a half–wave circuit since only one half of the sine rectification.
wave of current is passed, and the windings carry a dc In accordance with the preceding definition, the ripple
component of current which magnetizes the iron core and factor is the ratio of the effective current represented by I’ of
increases the core losses. As a result, half–wave rectifiers are Figure 88(c) to the dc component shown in Figure 88(d).
only practical for use with a transformer when the current This ratio may be computed by following the preceding
requirement is very small. form of calculation. Thus, the instantaneous ac ripple
component i may be represented as
Harmonics
When the current in a transformer winding does not have iȀ + i * IDC, (5.8)
a sinusoidal waveform, harmonic currents are present. The
harmonic content can be found by a Fourier analysis of the
and the total rms value of the ripple component Irms is
waveform or a spectrum analysis of current in an operating

Ǹ
circuit. For half sine waves the percentage of each harmonic
ŕ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
with respect to the fundamental is given in Table 17: 1 2
IȀrms + 0 (i * IDC)2 d

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
2
Table 17. Harmonic Percentages of a

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Half Sine Wave
Ǹ ŕ
2

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
1 2 * 2I )i2
Harmonic 2nd 3rd 4th 5th 6th IȀrms + 0 (i DC DC) d

2

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
(5.9)
% 21.2 0 4.2 0 1.8

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ÉÉÉÉÉÉÉ
Rectifier Applications

(a)
ÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉ
i
Rectification Ratios
The preceding discussion of ripple factor leads to the idea

ÉÉÉÉÉÉÉ
that the heating losses (I2R) which occur in the various parts
of the complete rectifier circuit are increased by the irregular

ÉÉÉÉÉÉÉ waveforms of current that are inherent in the rectifying


process. This loss may be illustrated by comparing the

ÉÉÉÉÉ
heating loss caused by an ideal direct current to that resulting

ÉÉÉÉÉ
from the actual current waves of Figures 88(a), 88(b), and
88(c). The ratio of dc power in the load to ac rms power in

ÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉ
(b) Ripple factor 1.21
I(AV) the load is termed the rectification ratio, Ó and is written as

ÉÉ ÉÉÉÉÉÉÉ
0.318 IM 2
I (DC)R L

ÉÉÉÉÉÉ
+ 2 (5.12)
I (RMS)R L

ÉÉÉÉÉÉ i’ Substitution of the appropriate current values in terms of

ÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉ
(c) Ripple component Im yields:

ÉÉ ÉÉÉÉÉÉÉ Ó + .406 (half–wave),


Ó + .812 (full–wave),

ÂÂÂÂÂÂÂÂÂÂÂÂ
dc component The rectification ratio is sometimes called the conversion

ÂÂÂÂÂÂÂÂÂÂÂÂ
efficiency. This term is somewhat misleading since the
(d)
overall power efficiency for the assumed conditions (zero
losses) must be 100%. The real significance of the

ÉÉÉÉÉ
ÉÉÉÉÉ ÉÉÉÉ
ÉÉÉÉ
rectification ratio is that it gives a qualitative indication of
the increased heat losses that occur wherever a pulsating

ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
current flows through resistance elements. A second method
(e) of expressing the increased heat losses is by the current form

ÉÉ ÉÉÉ ÉÉ
Ripple
0.636
0.318 IM factor factor, discussed earlier, which is the ratio of the
0.48 root–mean–square to the average value.

Figure 88. Illustration of Ripple Factors for


Voltage Relationships
Half–Wave and Full–Wave Circuits The input voltage required to achieve a given dc output
voltage (VDC) is a necessary piece of design information.
The first term in this expression is the rms value of the total The output voltage (VDC) is IDC RL and Equation 5.2 states
current I(RMS). The integral of the idθ part of the second that IDC = 0.318 IM for the half–wave circuit. The peak
term integrates to the average value I(DC), and the last term current (IM) is VM/RL and the rms input voltage
is simply I2(DC) after the limits are applied. Thus: Vi + Vmń Ǹ2

IȀrms + ǸI2RMS 2 2
* 2IDC ) IDC (5.10)
Combining these relationships yields:
Vi + 2.22 VDC (half–wave)
By combining Equations 5.10 and 5.5, the ripple factor The full–wave circuit produces twice the dc level as the
may be expressed as half–wave circuit for a given input voltage per transformer
rf + ǸF 2 * 1
leg. Consequently,
(5.11)
Vi + 1.11 VDC (full–wave)
(F is the form factor of the output current, not the diode
current.) Substitution of values from Figures 86 and 87 into Another voltage of importance is the maximum voltage
Equation 5.11 gives which the rectifier must block when it is not conducting. It
is called the peak inverse voltage, or, in rectifier parlance,
0.5IM VRRM. VRRM is the sum of the peak input voltage and the
Half–wave F + + 1.57
0.318IM rectifier peak output voltage at the same instant in time.
rf + Ǹ1.57 2 * 1 + 1.21
In the half–wave circuit of Figure 86, the output voltage
is zero when the input voltage reaches its negative peak;
0.707IM therefore,
Full–wave F + + 1.11
0.636IM
VRRM + VM + (Ǹ2) (2.22 VDC) + 3.14 VDC.
rf + Ǹ1.11 2 * 1 + 0.482 (half–wave)

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95
Rectifier Applications

In the full–wave center–tap circuit, the output voltage is Chapter 2 illustrates how a rectifier bridge assembly may be
maximum at VM, because of rectifier conduction on one properly handled thermally in the circuit of Figure 89(b). If
side, when the other side must block VM. Therefore, VRRM the loads are balanced, the circuit of Figure 89(a) does not
= 2 VM, but now the rms input voltage, VM is 1.11 VDC, have a dc component in the transformer core, thereby
consequently overcoming the major objection to the half–wave circuit.
VRRM + (Ǹ2) (2)(1.11) VDC + 3.14 VDC. The standard rectifier diode, being just a two terminal
(full–wave center–tap) device, has no internal means of regulating current. It is
often used, however, in conjunction with controllable
For the bridge, the blocking rectifiers are across the output
rectifiers such as SCRs in circuits similar to the hybrid
voltage; therefore, the maximum reverse voltage is VM. In
bridge rectifier shown in Figure 90.
this case,
Similar circuits have a multitude of applications but are
VRMM + (Ǹ2) (1.11) VDC + 1.57 VDC. most often used with fixed input voltages to vary the average
(full–wave bridge) power to the load. A change in gate pulse delay to the 5CR
serves to vary the conduction angle, α, as desired. The
Circuit Variations hybrid bridge may also be used to regulate the load power
Many applications require equal positive and negative over a range of input voltages or perform a combination of
power supply voltages. Circuits shown in Figure 89 are these functions. In such circuits the form factor can be quite
commonly used to provide dual output voltages. These high. For this reason, additional derating must be applied to
circuits are simply combinations of the standard half–wave the rectifier diodes current rating when operation is confined
and center–tapped full–wave circuits previously discussed. to small angles of conduction.

+
ÎÎÎ
Î ÉÉÉ
+

ÉÉÉ
ÎÎ
RL1 RL1

– +

ÉÉ ÉÉÉ
+

ÉÉ ÉÉÉ
RL2 RL2

– –

(a) (b)

Figure 89. Single–Phase Supplies with Dual Output Voltages: (a) Dual Half–Wave Supply;
(b) Dual Full–Wave Supply (a bridge assembly is convenient to use in this application)

Pulse

RL

iF

α Conduction Angle

Figure 90. Typical Hybrid Bridge Rectifier with Resulting Diode Current Waveform

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Rectifier Applications

Summary two diodes in series. Furthermore, the diode VRRM rating is


All the commonly used characteristics of low–frequency of little concern. The full wave center–tap circuit is therefore
single–phase rectifier circuits with resistive loads have been preferable at low voltages. For economy reasons, the
discussed in this chapter. Results are summarized in half–wave circuit finds use when current requirements are
Table 16. From the standpoint of maximum utilization of the small, particularly if direct connection to the power line is
transformer and reverse voltage rating of the rectifier allowable.
diodes, the bridge circuit is superior to the other two. Filters are generally used on the output of single phase
Although it requires more diodes, overall cost is generally rectifying circuits. Circuit characteristics are similar to those
similar because of simpler transformer construction and shown in Table 16 when inductive loads or choke input
lower diode VRRM requirements. At voltages of 12 VDC and filters are used, but characteristics change drastically with
below, the power efficiency of the bridge becomes capacitive loads or filters. Chapter 7 discusses filtering and
unacceptable because the output current must pass through its effect upon rectifier circuit performance.

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Rectifier Applications

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Rectifier Applications

Chapter 6

Polyphase Rectifier Circuits

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Rectifier Applications

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Rectifier Applications

 

 


A multiplicity of polyphase circuits have been devised, General Relationships in
but only a few are of relative importance. This chapter Polyphase Rectifiers
develops some of the basic relationships to show the The analysis of polyphase rectifier circuits may be greatly
demands placed upon the rectifier diode by some of the more simplified if the transformers and rectifiers are idealized;
popularly used circuits. More exhaustive studies are given that is, they are assumed to possess no resistance or leakage
in the references [1] [2]. reactance. Furthermore, the diode is assumed to have a zero
Polyphase transformer windings may be wye (Y) (also forward voltage drop and a zero reverse current. By
called “star”) or delta (∆) connected. When Y connected as idealizing the components, simple general expressions can
in Figure 91(a), voltages from any terminal (i.e.. A, B, or C) be derived for polyphase rectifiers.
to the neutral (N) are called phase voltages and appear on a Figure 92 shows the rectified voltage waveform for the
vector diagram as shown in Figure 91(b). The voltages VAB, general case of a polyphase rectifier circuit (See Figure 93
VBC, and VCA are called line voltages. The line voltages are for the simplest polyphase rectifier circuit). Conduction
also 120 out of phase, but because they are the vector sum takes place through the rectifier with the highest voltage
of two phase voltages they are √3 times larger and are across it. Note that neither the voltage nor the current is ever
displaced 30 from the phase voltages as shown in zero in the load. The instantaneous load voltage VL of
Figure 91(c). A common method of transformer connection Figure 92 is equal to the voltage of the conducting phase, and
is the delta connection indicated in Figure 91(d). The voltage is given by
across the delta terminal is the same as the line voltage, and
consequently bears the same relationship to the phase vL + VM sin
(6.2)
voltage as the line voltage. where VM = the peak phase–to–neutral voltage.
By summing voltages from two phases in a transformer,
a voltage bearing any desired amplitude and phase shift from
a phase voltage may be obtained. Thus, there is no inherent 2π
limit to the number of phases which may be generated. m
When a three–phase system is driving a balanced load, the
power is given by
P + Ǹ3 VI, (6.1) VM

where P = total power


V = rms phase or line voltage
I = corresponding rms phase or line current.
Figure 92. Rectified Voltage Waveforms for
C C Multiphase Rectifier Circuit. The number of output
VOC
pulses per cycle is designated
c 120°
b a
A 120° VOA
Current Relationships
N 120° As with single–phase circuits, the average or dc value of
VOB output current is of prime interest. It is the average value of
B B
(a) (b)
the instantaneous rectified current over one cycle or a period
VBC of 2π/m radians (see Figure 92). Using integral calculus, the
A average current per phase equals the rectifier diode current
and is given by
VOC 30° (π / 2)+(π / m)

V
A b
I
IF(AV) + M ŕ
2 (π / 2)+(π / m)
sin
d
(6.3)
30° OA
C a C B B
30° c
Solving,
VCA
B VOB
(c) (d)
Figure 91. Y and D Connections and Appropriate
I
IF(AV) + M ƪ
ǒǓ
 sin m
ƫ (6.4)
Phase Relationships:
(a) Wye–Connected Transformer Windings; The total load current (IL) is in times the current per
(b) Phase Voltage Relationships; conducting phase or
(c) Complete Voltage Vector;
(d) Delta–Connected Transformer Windings IL(DC) + IMǒm Ǔ
 sin m (6.5)

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Rectifier Applications

The rms current (If) is also of interest as it determines Transformer Utilization


heating in the transformer winding resistance and in the High transformer utilization is one of the chief benefits of
diode. The rms value varies as the square of the polyphase rectifier systems. The utilization factor (UF) is
instantaneous current and may be obtained by integration. the ratio of do power in the load to the volt ampere or power

ƪ ŕ ƫ
(π / 2)+(π / m) 1ń2 rating of the transformer and is commonly used in
2 2 comparing rectifier circuits. As defined,
If + IF(RMS) + 1 IM sin
d
(6.6)
2
(π / 2)+(π / m) I V
UF + (AV) (AV)(OUTPUT) (6.13)
Solving: I(RMS)V(RMS)(INPUT)

ƪ ǒ Ǔƫ
1ń2
If + IF(RMS) + IM 1 m ) 1 sin 2 (6.7) Values for the terms depend upon whether primary or
2 2 m secondary UF is desired. The utilization factor of the
It is convenient to have the diode rms current in terms of primary is found by considering the total volt–ampere
average current rather than the peak value so that the form requirement of the transformer and the total do load power.
factor of rectifier current may be determined. Equation 6.4 The secondary utilization factor generally considers only a
may be combined with Equation 6.7 to obtain particular winding’s contribution to the load and the
volt–ampere requirement of the winding.
I
Ǹǒ  
2 m
) 12 sin 2
m
Ǔ Utilization factors can only be computed by studying the
F + F(RMS) + (6.8)
voltage and current relationships in a particular circuit
IF(AV) sin m
configuration. It can be shown [1] that the highest obtainable
For m greater than or equal to three, Equation 6.8 may be utilization factor occurs when in = 3, i.e., conduction occurs
approximated as in a winding for 120. In this case, the winding is idle for
F + Ǹm (6.9) two–thirds of the cycle. The larger the number of phases, the
The simplification is done by using the small angle longer is the idle time and the less effectively the transformer
approximation, sin θ = θ. Ordinarily, the error caused by the is being used. To achieve high utilization factors and also the
approximation would be too large for θ = 60, but because advantages of 6– or 12–phase operation, bridge circuits are
of the nature of Equation 6.8, the overall error is small. For used and special secondary winding arrangements have
example, for m = 3 Equation 6.8 yields F= 1.76 while been devised which permit m to be three for the secondary
Equation 6.9 yields F= 1.73. windings; however, in is effectively six or twelve for the
output voltage waveform.
Voltage Relationships
In order to design the transformer, the required input Ripple
voltage from each transformer secondary leg (Vi) for a given The same relationships for ripple hold true for polyphase
output voltage must be known. Since VM = RLIM and circuits as with single–phase circuits. In Chapter 5, it is
VL(DC) = RLIL(DC), substituting these relationships into shown that the ripple factor of the output voltage may be
Equation 6.5 results in expressed as
VL(DC) + VMǒm Ǔ
 sin m (6.10) Ǹ2
rf + Vmn +
Ǹ2 V (nm) 2 * 1 (6.14)
The rms value of Vi is VM√2/2. Substituted and L(DC)
rearranging Equation 6.10 yields
An expression for the various ripple harmonics is obtained
VL(DC)
Vi + for the general polyphase rectifier system by applying
Ǹ2 ǒm sin  Ǔ (6.11)
 m Fourier analysis to the waveform. The resulting expression
The peak repetitive reverse voltage or peak inverse is given by
voltage applied to the rectifier, VRRM, is also of vital
Vmn Ǹ2
interest. In full–wave center–tapped circuits, it is the sum of rf + + (6.15)
Ǹ2 V (nm) 2*1
the instantaneous load voltage and peak input voltage. L(DC)
To obtain exact values, the precise output waveform must
be considered. However, VRRM cannot exceed 2 VM and in where
many polyphase circuits VL(DC) approaches VM. To be rf = ripple factor due to the nth harmonic,
conservative, let VL = VM; since Vi(PK) = VL√2, using Vmn = peak voltage of the nth harmonic,
Equation 6.11 above, VRRM can be put in terms of voltage VL(DC) = dc output voltage
as m = number of output pulses per cycle,

ǒ Ǔ
n = order of the harmonic.
VL(DC)
VRRM v 2 (6.12) In Equation 6.15, the only harmonics involved are
ǒm sin m Ǔ
multiples of in. Thus, for m = 3, only the third, sixth, ninth,
For bridge connections, VRRM is simply the peak output etc., harmonics of the input voltage contribute to the ripple
voltage, which is one half of that given by Equation 6.12. voltage.

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Rectifier Applications

Rectification Ratio rectifier and transformer should be calculated and used to


The last general item of interest is the rectification ratio Ó. correct the output voltage predicted ideally. The overlap
sometimes referred to as waveform or conversion problem is discussed more fully in Chapter 7 and in the
efficiency. It is the ratio of dc power in the load (I2L(DC)RL) references.
to rms power in the load (I2L(RMS)RL). In the ratio of terms,
the load resistance cancels and IL(RMS)/IL(DC) is the load Common Polyphase Rectifier Circuits
current form factor. Consequently, the rectification ratio A discussion of the basic and more popular rectifier circuit
may be expressed as configurations follows. Pertinent characteristics of each
circuit are listed in Table 18.
+ 1
(6.16)
[F(load)] 2 Three–Phase Half–Wave Star Rectifier Circuit
To find the load current form factor, the total rms The three–phase star rectifier circuit, often referred to as
component of load current must be known. It may be found the three–phase half–wave rectifier, is illustrated in
from Equation 6.6 by recognizing that the total current will Figure 93(a). The associated voltage waveforms are shown
be m times the phase current. Therefore. in Figure 93(b). Because the circuit is economical, it finds
limited use where dc output voltage requirements are
ƪ ŕ ƫ
(π / 2)+(π / m) 1ń2
2 2 relatively low and current requirements are too large for
IL(RMS) + m IM sin
d
(6.17) practical single–phase systems. The circuit is worth
2
(π / 2)+(π / m)
studying mainly because it is a building block of more
Solving, complicated systems. By using the equations developed in

ƪ ǒ Ǔƫ
1ń2 the preceding section, the various items of interest may be
 ) 1 sin 2
IL(RMS) + IM m m (6.18)
2 2 m calculated as given in Table 18.
The dc output voltage is approximately equal to the phase
By comparing Equation 6.1810 Equation 6.7, it can be voltage. However, the diodes must block approximately the
seen that rms load current is simply √m times rectifier leg line–to–line voltage, which is √3 times the phase voltage. In
current and the load current is in times the rectifier leg addition, the transformer design and utilization are
current. Therefore, the form factor of the load is simply 1/√m somewhat complicated in order to avoid transformer core
times the rectifier leg form factor as given by Equation 6.8. saturation caused by the do component of current flow in
Accordingly: each secondary winding.
Ǹ  
2m m
ƪ ) 12 sin 2
m
ƫ
F(load) + (6.19)
sin ńm C
N B
An attempt to simplify Equation 6.19 as done with
Equation 6.8 yields unity. Therefore, it must be used without
approximation to yield meaningful results. Substituting A RL
Equation 6.19 into Equation 6.16 yields
2m sin 2(ńm) (a)
+
ǒm ) 12 sin 2m Ǔ (6.20)
VL

Overlap
In practice current does not switch instantaneously from 0
one diode to another Overlap is observed, that is, a period of
time where current flows in two diodes, each in different
branches. Overlap is caused because leakage inductance and
VAN VBN VCN
the stored charge in diodes will not allow current in the (b)
individual phases to change instantaneously.
One effect of overlap is to reduce the output of the rectifier Figure 93. Circuit (a) and Waveform (b) for the
circuit. This reduction, along with the voltage drop in the Three–Phase Star or Half–Wave Rectifier Circuit

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Rectifier Applications

Three–Phase lnter–Star Rectifier Circuit


The three–phase inter–star or zig–zag rectifier circuit
shown in Figure 94 overcomes some of the transformer
limitations of the three–phase half–wave star circuit. The
A’
primary and secondary windings each consist of two coils, VS1
with pairs of coils forming a phase, located on different
branches of the transformer core. The windings on the same VS
B
core branch are connected such that the instantaneous A C
magnetomotive force is zero. Although this connection A’ C’ VS C RL
eliminates the effects of core saturation and reduces the B’
C’ A
primary rating to the minimum of 1.05, it does so at the
expense of economy, since it does not utilize the voltage of B
B’
each winding to yield the highest possible out put voltage.
The two secondary windings in series give a voltage of
√3VS1 instead of 2VS1. This results from the addition of two
sinor voltages that are 600 apart. Consequently. the
secondary volt ampere rating increases to 1.71 from the 1.48
value shown in Table 18. Otherwise, circuit constants are the Figure 94. Three–Phase Inter–Star or Zig–Zag Circuit
same as the three–phase star circuit and therefore are not
listed in Table 18.

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Table 18. Summary of Significant Three–Phase Rectifier Circuit Characteristics for Resistive Loads

ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Double Wye Wye–Delta Connections

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Half–wave with Interphase Full–wave
F ll–wave
Parallel Series

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Star Bridge Transformer Star

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Average Current through Diode
lF(AV)/IL(DC) 0.333 0.333 0.167 0.167 0.167 0.333

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Peak Current through Diode
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
IFM/IF(AV) 3.63 3.14 3.15 6.30 6.30 6.30

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Form Factor of Current through Diode

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
IF(RMS)/I(DC) 1.76 1.74 1.76 2.46 2.46 2.46

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
RMS Current through Diode
IF(RMS)/IL(DC) 0.587 0.579 0.293 0.409 0.409 0.818

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Vi/VL(DC) ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁ
RMS Input Voltage Per Transformer Leg
0.855 0.428 0.855 0.741 0.715 0.37

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Diode Peak Inverse Voltage

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
VRRM/VL(DC) 2.09 1.05 2.42 2.09 1.05 1.05

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Transformer Primary Rating
VA/PDC 1.23 1.05 1.06 1.28 1.01 1.01

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Transformer Secondary Rating
ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
VA/PDC 1.50 1.05 1.49 1.81 1.05 1.05

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Total RMS Ripple, % 18.2 4.2 4.2 4.2 1.0 1.0

ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
Lowest Ripple Frequency, fr/fi

ÁÁÁÁ
Rectification Ratio (ConversionÁÁÁÁÁ
ÁÁÁÁÁ
3 6 6 6 12 12

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Efficiency), % 96.8 99.8 99.8 99.8 100 100
1. See Table 19 in Chapter 7 for inductive load data.

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Rectifier Applications

Three–Phase Full–Wave Bridge Circuit Three–Phase Double–Wye Rectifier with


A three–phase full–wave bridge connection is commonly Interphase Transformer
used whenever high dc power is required, as it exhibits a The three–phase double–wye rectifier circuit is frequently
number of excellent attributes. It has a low ripple factor, low used instead of a bridge circuit because each rectifier diode
diode PIV, and the highest possible transformer utilization contributes only 1/6 instead of 1/3 of the load current.
factor for a three–phase system. Because of the full–wave However, the peak inverse voltage for this circuit is higher
rectification associated with each secondary winding, it is than the three–phase star system due to the interphase
permissible to use any combination of wye or delta primary reactor.
and secondary windings or three single–phase transformers The circuit (Figure 96) consists essentially of two
in place of one three–phase transformer. A schematic of a three–phase star circuits with their neutral points
popular circuit is shown in Figure 95(a). The voltage interconnected through an interphase transformer or reactor
waveforms are shown in Figure 95(b). (also called a balance coil). The polarities of the
Each conduction path through the transformer and load corresponding secondary windings in the two parallel
passes through two rectifiers in series; a total of six rectifier systems are reversed with respect to each other, so that the
elements are required. Commutation in the circuit takes place rectifier output voltage of one three–phase unit is at a
every 60, or six limes per cycle. Such action is referred to as minimum when the rectifier output voltage of the other unit
a six pulse rectifier which reduces the ripple to 4.2% and is at a maximum, as shown. The action of the balance coil is
increases the fundamental frequency of ripple to six times the to cause the actual voltage at the output terminals to be the
input frequency. No additional filtering is required in many average of the rectified voltages developed by the individual
applications. Thus, with this circuit the low ripple factor of a three–phase systems. The output voltage of the combination
six–phase system is achieved while still obtaining the high is therefore more nearly constant than that of a three–phase
utilization factor of a three–phase system. The dc output half–wave system; moreover, the ripple frequency of the
voltage is approximately equal to the peak line voltage or 2.4 output wave is now six times that of the supply frequency,
times the rms phase voltage; each diode must block only the instead of three times.
output voltage. Three–phase bridge connections are popular
and are recommended wherever both dc voltage and current
requirements are high.
A1
The circuit characteristics are obtained by substituting
C1
m = 6 in the general equations. Results are shown in Table 18.

B1

Interphase RL
Reactor
(Balance Coil)

RL B2 C2

A2

(a) (a)

Voltage of second Y
Voltage across load

One Cycle
O
of Supply

(b)
(b)
Figure 95. Three–Phases Full Bridge Circuit and Figure 96. Circuit and Waveforms for the
Associated Waveforms. Three–Phase Double Wye Circuit: (a) Circuit; (b)
(a) Three–Phases Full–Wave Bridge Circuit; Waveforms
(b) Voltage Waveforms, Solid Line is Output Voltage
and the Dashed Lines are the Phase Voltages

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Rectifier Applications

In order that the individual three–phase half–wave Six–Phase Full–Wave Bridge Circuits
systems may operate independently with current flowing In many applications, it is necessary to reduce ripple below
through each diode one third of the time, the inter–phase the 4.2% level characteristics of tree–phase, full–wave and
reactor must have sufficient inductance so that the six–phase, half–wave connections. A reduction to
alternating current flowing in it as a result of the voltage approximately 1.0% at a ripple frequency twelve times the
existing across the coil has a peak value less than one–half input frequency can be achieved by using wye–delta
the dc load current. That is, the peak alternating current in secondaries which result in 300 phase shift between
the interphase reactor must be less than the direct current windings. Either parallel or series bridge connections may be
flowing through one leg of the coil. Since the direct current used for the output as shown in Figure 98.
flows in opposite directions in the two halves of the When an equalizing reactor is used to couple the two
interphase reactor, no dc saturation is present in this reactor. bridge sections as in Figure 98(a), the system behaves as two
parallel three–phase bridge circuits, with each section
Six–Phase Star Rectifier Circuit supplying one–half the load current. The parallel connection
The six–phase star rectifier circuit shown in Figure 97 is of the two groups is preferable to avoid having current pass
often referred to as the three–phase diametric or full–wave through four diodes in series, but for high–voltage
rectifying circuit because it has a center–tapped transformer. applications the series connection (as in part b) may result
The characteristics are obtained from the general rectifier in a more economical design.
equations where m is equal to six. Fields of application
include requirements for very high dc load currents in
low–to–medium voltage ranges. Voltage is usually
restricted because the peak inverse voltage applied to the
diodes is twice the peak phase voltage and transformer
secondary utilization is poor. Current flows in only one RL
rectifying element at a time, resulting in a low average
current, but a high peak to average current ratio in the diodes.
The six–phase star circuit is attractive in applications
which require a low ripple factor and a common cathode or
anode connection for the rectifiers. The primary winding is
generally delta–connected, although a wye connection is
sometimes used with a tertiary winding. An additional (a)
advantage of the six–phase star is that the dc currents cancel
in the secondary and, therefore, core saturation is not
encountered.

RL RL

(b)
Figure 97. The Six–Phase Star Circuit
Figure 98. Six–Phase Full–Wave Bridge Circuits

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Rectifier Applications

Comparison of Circuits High–Current Parallel–Connected


As discussed, the three–phase and six–phase star circuits Diodes
have limited applications because of a number of In some applications in chemical, metal, and
disadvantages. The most popular circuits by far are the transportation industries, the required dc output current
three–phase full–wave bridge and the three–phase cannot be achieved by using a single cell diode. In such
double–wye with interphase transformer. Both are alike in instances, it is necessary to operate diodes in parallel. Care
many respects. must be taken in the design to achieve a reasonable degree
Comparing the double–wye connection with interphase of current balance. The three main causes of unbalance are:
transformer with its rival, the three–phase bridge • differences in diode forward voltage drop
connection, it is found:
• self and mutual inductances of the diode and bus
1. The diodes of one leg of an interphase transformer
connection (referred to as the ladder effect in literature [3])
connection have to handle twice the voltage but
only half the current of the diodes in one leg of a • magnetic coupling between legs.
bridge connection with the same values of direct Diode differences can be minimized by purchasing the
voltage and current. This is because the diodes in closely matched sets but matched diodes are
commutating groups operate in parallel in the difficult to obtain from manufacturers at a cost–effective
interphase transformer connection and in series in price. The resistance of the fuses used in series with each
the bridge connection. The high voltage rating is diode also improves balance. Some resistance will be
usually no problem and does not, in general, encountered in the busing and connections. It should be very
proportionally increase the price of the diodes low in the main busses as compared to that in each individual
(very high voltage excepted), but the lower current diode leg.
value reduces the rating of the diodes and all Use of balancing transformers is a very effective means of
associated components such as fuses, bus bars, and forcing proper current balance and may be less expensive
cooling equipment, and is therefore a great than purchasing factory matched units. The transformers
advantage. consist of laminated iron cores usually with single–turn
2. The total power losses are smaller in an interphase primary and secondary windings. The current from two
transformer connection because of the lower diodes in parallel passes around the core in opposite
current carried by the diodes. directions so that any unbalance will induce a voltage which
3. The reactive voltage drop caused by the bus bars serves to correct the unbalance. The basic technique is
can be made smaller in an inter–phase transformer shown in Figure 99. Its extension to larger numbers of
connection since the current to be commutated is rectifiers is illustrated and briefly discussed in Figure 100.
only half of the current commutated in a bridge
connection, and the commutating voltage is twice
as high. +
For these reasons, the interphase transformer connection
is competitive with the three–phase bridge connection in a
certain voltage–current range, despite the relatively high +
transformer rating and the problem of avoiding saturation of
the inter–phase transformer core due to current unbalance.
In special cases where low ripple is required and large
power must be handled, a six–phase bridge or other
Figure 99. Parallel Operation of Rectifier Diodes
high–order system may prove attractive. Other useful
Using Balancing Transformers
systems are covered in the literature [2].

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Rectifier Applications

Computer simulation of the busing used in a stack of 3. The length of the diode path should be as short as
parallel diodes has led to the following design guidelines [4]: possible. Although the resistance of the path
1. The ac and dc buses of each leg should be as close increases as the path length increases, the
as possible. Mutual inductance between these self–inductance and mutual–inductance effects
buses is beneficial. predominate, which increases the unbalance.
2. The distance between the parallel diodes should be
increased. The coupling of the mutual inductance
of these paths acts as an improperly phased
balance reactor.

+
+ + T2
+

+ T4

T3
+

T1
+

(a) (b)

Figure 100. Schemes for Balancing the Current When More than Two Diodes are Required.
(a) Balancing Reactors Used with Diodes in an Extension of the Basic Circuit. Transformer T3 must handle
twice the current of T1 or T2; T4 must handle twice the current of T3, etc.;
(b) Balancing Reactors in a Closed–Chain System. Each winding carries only the current of one diode

References
1. Jacob Millman and Samuel Seely, Electronics, 4. S.M. Peeran, A. Kusko, W.R. Hodgson & E.G.
Second Edition, Chapter 14, McGraw–Hill Book Fellendort, Current Balance in Parallel Power
Company, Inc., New York, New York, 1951. Diodes in Three–Phase Rectifiers, IEEE
2. Johannes Schaefer, Rectifier Circuits: Theory and Transactions on Industry Applications, Vol. IA–23,
Design, John Wiley and Sons, Inc., New York, No 3., May/June, 1987.
New York, 1965.
3. D.A. Paice, Multiple Paralleling of Power Diodes,
IEEE Trans. TECI, Vol. IECI22, pp. 151–158,
May, 1975.

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Rectifier Applications

Chapter 7

Rectifiers Filter Systems

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Rectifier Applications

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Rectifier Applications



 !
   
Rectifiers without output filters, especially single–phase because the rectifier is followed by an electronic regulator
circuits, find limited application owing to their high ripple or switch mode dc–to–dc converter.
and relatively low rectification ratio. A Fourier analysis of
the rectifier output waveform yields a constant term (the dc Behavior of Rectifiers with
voltage) and a series of harmonic terms. Filters are usually Choke–Input Filters
added to extract the constant term and attenuate all harmonic The voltage and current relations existing in rectifier
terms. The input impedance of the filter dramatically systems having a series–inductance (choke–input) filter are
influences the current and voltage relations of the illustrated by the sketches of Figures 101 and 102. While
transformer–rectifier combination; therefore, filters are these apply to specific rectifier circuits, the same general
broadly classified by the type of input element used. behavior occurs in all rectifier systems of the choke–input
Inductor–input filters are preferred in higher–power type.
applications in order to avoid excessive turn–on and When the input inductance is assumed infinite, the current
repetitive surge currents. Choke–input filters also offer through the inductance is constant and is carried at any
greatly reduced electromagnetic interference, which is moment by the rectifier diode which has the most positive
frequently caused by rectifier repetitive surge currents. voltage applied to its anode at that instant. As the alternating
More efficient transformer operation is also obtained voltage being rectified passes through zero or when another
because of the reduction in form factor of the rectifier anode becomes most positive, the current suddenly transfers
current. from one diode to another, giving square current waves
An inductor attempts to hold the load current constant and through the individual rectifier diodes, as shown by the
is thus more effective at heavy loads or small values of load dotted lines in the lower sketches of Figure 101. When the
resistance. Use of an inductor alone is generally impractical, input inductance is finite and large, the situation is as shown
particularly when variable loads must be handled because by the solid lines. The current through the input choke
the attenuation is not sufficient with reasonable values of increases when the output voltage of the rectifier exceeds the
inductance. Analysis of a single L–R network shows that the average or dc value and decreases when the rectifier output
ripple is reduced by the factor: voltage is less than the dc value, causing the current through
1 the individual diodes to be modified as shown. If the input
Ǹ1 ) ǒXLńRLǓ 2 (7.1)
inductance is too small, the current decreases to zero during
a portion of the time between the peaks of the rectifier output
where voltage, and the conditions are similar to a capacitor–input
XL is the reactance of the filter choke filter system, as discussed later in this chapter.
RL is the resistance of the load. The ratio of peak current per individual diode to the dc
Unless XL » RL, filter action is ineffective. The basic current developed by the overall rectifier system depends
inductor–input filter is therefore an L section employing upon the rectifier connection and the size of the input
both inductance and capacitance so that the complementary inductance. When the input inductance is infinite, the anode
characteristics of the filter elements are used to advantage. of each rectifier diode must at some time during the cycle
It should also be noted that inductive loads, or filters, are not carry the entire load current, except in the case of the
good practice in half–wave single–phase rectifiers owing to three–phase half–wave double–wye system, where each
the large rectifier inverse–voltage transient which occurs diode is called upon to carry only half of the load current.
when conduction inevitably ceases. These and other useful current relations for different
Demands for smaller and lighter equipment have forced rectifier connections are presented in Table 19. When the
designers to use capacitor–input filters in lower–power input inductance is not infinite, the current through the input
systems operating from single–phase ac lines. When inductance will vary around the value for the infinite
capacitor–input filters are used, diodes whose average rating inductance case, as illustrated in Figure 101. In the least
more nearly matches the load requirement can be used if a favorable case, corresponding to an input inductance barely
source–to–load resistance ratio of about 0.03 and voltage sufficient to obtain choke–input type of operation, the peak
regulation of about 10% are acceptable. Close regulation value of diode current is twice the value corresponding to
from the rectifier is seldom needed in electronic equipment infinite input inductance.

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Rectifier Applications
Transformer Rectifier Filter D1

L1
D1 D2 L1

L
L O
Rectifier O D3 A
D
Output A
D2 D
Rectifier
Output

Voltage Applied To
Rectifier Output Voltage Voltage Applied Load (Substantially
To Filter Input Constant)
Voltage
Across Load

Voltage Relations Voltage Relations

Finite Inductance Infinite Inductance Finite Inductance Infinite Inductance


Current in Inductance Current in Inductance

Current in D1

D1
Finite Input Infinite Input Current in D2
Inductance Inductance

D2
Current in Individual Diodes Current in D3
(a) (b)

Figure 101. Voltage and Current Waveforms Existing in Rectifier Systems Operating with Choke–Input Filters:
(a) Circuit of Rectifier and Filter, Single–Phase Full–Wave Case;
(b) Circuit of Rectifier and Filter, Three–Phase Case

D1

+ D2
L
O
A L
D O
– D3 A
D

Rectifier Circuit

No. 1

Current in One Half of Secondary


No. 2

No. 3
Current in Other Half of Secondary

Current in Primary Current in Primary No. 1

(a) (b)

Figure 102. Typical Current Waves in Primary and Secondary Windings of Transformer for Ideal Choke–Input
Systems: (a) Single–Phase Full–Wave System; (b) Three–Phase Half–Wave

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Rectifier Applications

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Table 19. Characteristics of Typical Rectifiers Operated with Inductance–Input Filter Systems

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
Rectifier
Circuit
Connection
ÁÁÁÁÁ Single–Phase
Full–Wave
Single–Phase
Full–Wave
Three Phase
Hall–Wave
Three–Phase
Full–Wave
Three–Phase
Double Wye
With

ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁ
Characteristic
ÁÁÁÁÁ
ÁÁÁÁÁ
Center–Tap
Center Tap Bridge Star Bridge Interphase
Transformer

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
‡Average Current Through Diode
IF(AV)/IL(DC) 0.500 0.500 0.333 0.333 0.167

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
‡Peak Current Through Diode IFM/IF(AV)

ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁ
Form Factor of Current Through Diode
2.00 2.00 3.00 3.00 3.00

ÁÁÁÁÁÁÁÁÁÁÁÁ
IF(RMS)/IF(AV) 1.41 1.41 1.73 1.73 1.76

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
RMS Input Voltage Per Transformer Leg
VI/VL(DC) 1.11* 1.11 0.855 0.428 0.885

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Diode Peak Inverse Voltage
ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
(PIV) VRRM VL(DC) 3.14 1.57 2.09 1.05 2.42

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Transformer Primary

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁ
Rating VA/PDC 1.11 1.11 1.21 1.05 1.05

ÁÁÁÁÁÁÁÁÁÁÁÁ
Transformer Secondary
Rating VA/PDC 1.57 1.11 1.48 1.05 1.48

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Ripple (VF/VL(DC) Lowest frequency in

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
rectifier output (fr/f1)
Peak Value of Ripple
2 2 3 6 6

ÁÁÁÁÁ
Components:

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁ
Ripple frequency (fundamental) 0.667 0.667 0.250 0.057 0.057†

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Second harmonic 0.133 0.133 0.057 0.014 0.014
Third harmonic 0.057 0.057 0.025 0.006 0.006

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Positive peak
Negative peak
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁ
Ripple peaks with reference to dc axis: 0.363
0.837
0.363
0.637
0.209
0.395
0.0472
0.0930
0.0472
0.0930

1. This table assumes that the input inductance is sufficiently large to maintain the output current of the rectifier substantially constant, and
neglects the effects of voltage drop in the rectifier and the transformers. PDC = 12LRL, VL = ILRL
*Secondary voltage on one side of center–tap.
†The principal component of voltage across the balance coil has a frequency of 3 fi and a peak amplitude of 0.500. The peak balance coil voltage,
including the smaller, higher harmonics, is 0.605.
‡Assumes infinite input inductance.

The output voltage from the rectifier diodes applied to a component of the output voltage. The remaining ripple
choke input filter can, for nearly all practical purposes, be components are harmonics of this lowest frequency
considered the same as if applied to a resistive load. The component and diminish in amplitude with the order of the
output voltage wave of the rectifier can be considered as harmonic involved in accordance with Equation 7.1. The
consisting of a dc component upon which are superimposed more significant components of ripple are shown in Table
ac voltages, termed ripple voltages. In the case of the 20. The ripple frequencies in the table are presented in
idealized full–wave single–phase rectifier, Fourier analysis relation to the fundamental frequency of ripple, not to the
shows that the output wave vL has the equation input frequency. For the full–wave circuit, the fundamental
ǒ
VL + 2VM 1 * 2 cos 2t * 2 cos 4t * 2 cos 6t
3 15 35
Ǔ ripple component for a 60 Hz input is 120 Hz; the second
harmonic is 240 Hz, and the third harmonic is 360 Hz.
(7.1) Table 19 also gives the results of the analyses [1] for the
output waves delivered by several popular polyphase
where rectifier connections. The ripple voltages are much less for
VM represents the peak value of the ac voltage applied to the three–phase half–wave rectifier than for the
the rectifier diode single–phase connection, and are still less for the six–phase
ω is the angular velocity (2 πf) of the supply frequency. arrangements. In all cases, the amplitude of the ripple
(A full derivation of this equation is given at the end of this components diminishes rapidly as the order of the
chapter.) harmonics is increased. Not only are the ripple amplitudes
Note that the dc component of the output wave is 2/π times lower but the ripple frequencies are higher for polyphase
the crest value of the ac wave, and the lowest frequency than for single–phase rectifiers, attributes which allow
component of ripple in the output is twice the supply choke size to be greatly reduced. For example, the
frequency and has a magnitude that is two–thirds the dc three–phase full–wave connections used with a 60 Hz input

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Rectifier Applications

have a lowest ripple frequency component of 360 Hz with 500 k


an amplitude of 5.7% of the dc level. The second harmonic 200 k
is 720 Hz with a level of only 1.4% and the third harmonic
100 k
is 1080 Hz with an amplitude of only 0.6%. Consequently,
a relatively small choke and capacitor can reduce the 50 k
fundamental ripple frequency to a very low level and the 20 k

A
harmonics to an insignificant level.
10 k
Three–Phase, Full–Wave
5k Six–Phase, Half–Wave (m = 3)
Input Inductance Requirements
To achieve normal choke–input operation, it is necessary 2k Three–Phase, Half–Wave (m=3)
to maintain continuous flow of current through the input 1k Single–Phase, Full–Wave
inductance. The peak value of the alternating current
500
component flowing through the input inductance must, 50 100 200 500 1k 2k 5k
hence, be less than the dc output current of the rectifier. The Input Frequency (Hz)
value for minimum inductance, called critical inductance
Figure 103. Values for the Constant A Used to
(LC) is derived from the following argument.
Compute Critical Inductance
The average or dc current is VL(DC)/RL. The peak
alternating current is very nearly the peak value of the
Values for other frequencies can easily be obtained by
fundamental–frequency component, since the
extrapolation, since A is inversely proportional to
higher–frequency components of the ripple current are
frequency. The value of A for a single–phase full–wave
relatively small. The current ripple harmonics are smaller
circuit operating at 20 kHz, for example, is 400,000 (10
than those given by Table 19, because of the higher reactance
times the 2 kHz value). The critical inductance required in
of the inductor at the harmonic frequencies. The inductor is
polyphase systems is considerably less than that required in
normally followed by a capacitor having a low reactance at
a single–phase system. The higher the load resistance (i.e.,
the fundamental ripple frequency, so that the peak ripple
the lower the dc load current) the more difficult it is to
component is very close to VM1/ω1L. The ratio of
maintain a continuous flow current. Also, with a given L,
peak–to–average current therefore closely approximates
continuous flow will not occur when the load current drops
(VM1/VDC)/ωLC/RL, which must not be less than unity.
below a critical value.
For a single–phase, full–wave circuit, the fundamental
When the inductance is less than the critical value, the
ripple component ωi is twice the input frequency ωi; also, the
system acts similar to a capacitor–input system, described
ratio VM1/VDC is the coefficient (2/3) of the fundamental
later. When the load current varies from time to time, it is
ripple frequency term (cos 2ωt) in Equation 7.1. After
necessary to satisfy the equations at all times if proper
substituting 2ωi, for ω1 and 2/3 for VM1/VDC into the
operation and, in particular, good voltage regulation are to
previous expression, the following equation for critical
be maintained. In order that this requirement may be
inductance is found:
satisfied at very small load currents without excessive
R inductance, it is usually necessary to place a resistance
LC + L (7.2)
3i (commonly termed a bleeder resistance) across the output of
Using a similar procedure for polyphase rectifiers, the the rectifier–filter system. The bleeder current is a
critical inductance is found to be compromise between having excessive dissipation in the
bleeder resistor and excessively large Lc.
2RL It is important to keep in mind that the effective
L+ (7.3)
m(m 2 * 1)i inductance LC is the incremental inductance, that is, the
inductance to the alternating current superimposed upon the
In Equations 7.2 and 7.3 dc magnetization. Incremental inductance always increases
LC = the critical inductance in Henries as the dc magnetization decreases. This fact is of assistance
RL = the load resistance in ohms in satisfying the equations at low load currents where RL is
ωi = the input or line frequency in rad/sec large and can be put to advantage by the use of a “swinging”
m = the effective phase number for the output wave. choke in which the inductance is varied by the load current
(If the resistance of the choke, diode, or transformer is using a controlled approach to saturation that lowers
significant, the values should be added to RL). inductance as current increases.
For convenience, Equations 7.2 and 7.3 are put in the form
R
LC + L (7.4)
A

where A is a constant determined from Figure 103.

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Rectifier Applications

It is essential to avoid series resonance between the input


choke and first filter capacitor because at resonance very
high circulating currents flow. Since at resonance,
1/ω1L = ω1C, to avoid resonance it is sufficient to insure that +
L
O
A
 2 LC § 2 (7.5) D
1 –
Rectifier
Output
where  is the lowest frequency component of the ripple. (a)
The output ripple magnitude depends upon the values of

the choke and the capacitor used. It is calculated as shown
in the subsequent sections.

(b)
Voltage Regulation in Choke Input Systems

ÉÉ É ÉÉ ÉÉ

Given ideal components, the load regulation of a rectifier–
filter system employing input inductance greater than the
critical value would be perfect–i.e., voltage output would be
independent of load current. In practice, the output voltage
ÉÉ É ÉÉÉÉ
falls off with increasing load as a result of resistance in the (c)
diodes, filter, and transformer and as a result of the leakage
reactance of the supply transformer. The various resistances
Figure 104. Effect of Transformer Leakage
in the circuit reduce the output voltage without affecting the
Inductance on the Behavior of a Polyphase Rectifier:
waveshapes in the system. The leakage reactance of the (a) Three–Phase Half–Wave Rectifier Circuit;
transformer, however, distorts the waveshape of the output (b) Current of Individual Diodes;
voltage by preventing the current from shifting instantly (c) Voltage Wave
from one transformer winding to another, as in the ideal
cases of Figure 101. The situation in a typical case is shown
in Figure 104 where  represents the time interval required
to transfer the current. During this transition period, the
output voltage assumes a value intermediate between the Behavior of Rectifiers Used with
open–circuit voltages of the two windings that are Capacitor–Input Filters
simultaneously carrying current, instead of following the The rectifier–filter system illustrated in Figure 105 differs
open–circuit potential of the more positive anode. As a from that of Figure 101 in that a shunt capacitor is presented
result, the average voltage of the output is less than if no to the rectifier output. Each time the positive peak
leakage inductance were present by the amount indicated by alternating voltage is applied to one of the rectifier anodes,
the shaded areas in Figure 104(c). The quantitative relations, the input capacitor charges up to just slightly less than this
which are quite complicated, depend upon both the rectifier peak voltage. No current is delivered to the filter until
and the transformer connections. another anode approaches its peak positive potential. When
When the input inductance is less than the critical value, the capacitor is not being charged, its voltage drops off
the output voltage rises, and when the load resistance is very nearly linearly with time because the load draws a
large, the output voltage will approach the peak value of the substantially constant current. A typical set of voltage and
rectifier output waveform causing the system to have poor current waveforms is shown in Figures 105(c) and 105(d).
voltage regulation. When the load current is small, the Use of an input capacitor increases the avenge voltage across
energy stored in the inductor is also small and the inductor the output terminals of the rectifier and reduces the
is essentially out of the circuit. amplitude of the ripple in the rectifier output voltage.

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Rectifier Applications

Analysis of Rectifiers with


Capacitor–Input Systems Trans–
former Rectifier Filter
The detailed action that takes place in a capacitor–input
system depends in a relatively complicated way upon the
a
load resistance in the rectifier output, the input filter
L1
capacitance, the leakage reactance and resistance of the
transformer, and the characteristics of the rectifier diode. For R
C1 C2
purposes of analysis, the actual rectifier circuit, such as that
of Figure 105(a), is replaced by the equivalent circuit of a
Figure 105(b). The diode is replaced by switch S, which (a)
closes only when one of the diodes conducts current. The
transformer is replaced by an equivalent generator having a
LS RS I1
voltage equal to the open–circuit line to center–tap i
secondary voltage and having equivalent internal
impedance elements LS and RS. The inductance LS is the
leakage inductance of the transformer, measured across VM sin ωt VC C1
one–half the secondary winding with the primary
short–circuited. The source resistance RS the corresponding
transformer’s resistance plus a resistance to account for the (b)
resistance of the diode. In very low–voltage systems, a small
potential φ may be needed to more accurately account for the
diode voltage drop. The input capacitor of the filter system
is C1, and the first inductance L1 (if used) and the load are
assumed to draw a constant current I1 equal to the dc voltage
developed across the input capacitor divided by the sum of (c)
the actual load resistance plus the resistance of the filter
inductance.
By utilizing the equivalent circuit of Figure 105(b), the
effects that result from changes in individual circuit
elements may be deduced. Thus, a decrease in the load
resistance–i.e., an increase in the dc output current–reduces (d)
the average or dc output voltage, increases the ripple
voltage, and increases the length of time during which the
diode is conducting, as illustrated in Figure 106(a). Figure 105. Actual and Equivalent Circuits of
Increasing the input capacitance has as its principal effect a Capacitor–Input Rectifier System, Together with
decrease in the ripple voltage and also causes the average Oscillograms for Voltage and Current for a Typical
voltage to be increased slightly; these effects are shown in Operating Condition:
Figure 106(b). Increasing the leakage inductance (or (a) Actual Circuit; (b) Equivalent Circuit;
resistance) of the transformer, reduces the average output (c) Voltage Across Input Capacitor C1;
voltage as illustrated in Figure 106(c), and likewise (d) Current Through Diode
decreases the ratio of peak–to–average current flowing
through the rectifier diode. In the case of a source and diode
having very low impedance, the situation is as illustrated in
Figure 106(d), and the peak current becomes quite high.

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116
Rectifier Applications
Normal Capacitance
Normal Load Resistance

Voltage

Voltage
Low Load Very Large
Resistance Capacitance

Current
Current

(a) (b)

Normal Leakage Inductance Low Impedance

Voltage
Voltage

Normal
Impedance

Increased
Leakage
Inductance

Current
Current

(c) (d)

Figure 106. Effects of Circuit Constants and Operating Conditions on Behavior of Rectifier Having a
Capacitor–Input Filter: (a) Effect of Load Resistance; (b) Effect of Capacitance;
(c) Effect of Transformer Leakage Inductance; (d) Effect of Very Low Diode and Transformer Impedance

Design of Capacitor–Input Filters significance than its dynamic resistance in low–voltage


The best practical procedure for the design of supply applications, as the dynamic resistance can generally
single–phase capacitor–input filters still remains based on be neglected when compared with the sum of the
the graphical data presented by Schade [2] in 1943. The transformer secondary–winding resistance plus the
curves shown in Figures 107 through 10 give all the required reflected primary–winding resistance. The forward offset
design information for half–wave and full–wave rectifier may be of considerable importance, however, since it is
circuits. Whereas Schade originally also gave curves for the about 0.8 V for conventional silicon junction diodes and
impedance of vacuum–tube rectifiers, the equivalent values about 0.4 V for Schottky diodes, which clearly cannot be
for semiconductor diodes must be substituted. However, the ignored in supplies for 12 V or less.
rectifier forward voltage offset often assumes more

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117
Rectifier Applications
100 0.05
0.5
RL 1
90
2
VM C VC RL
80 4

6
70 8
10
60 12.5
15

VC(DC) 20 RS
(%) 50 (%)
VM 25 RL
30
35
40 40
50
60
30 70
80
90
20 100

10

0
0.1 1 10 100 1,000
CRL, (C in farads, RL in ohms)
Figure 107. Relation of Applied Alternating Peak Voltage to Direct Output Voltage in Half–Wave
Capacitor–Input Circuits (From O.H. Schade, Proc. IRE, Vol. 31, 1943, p. 356)
100 0.05
0.1
0.5
1
VM RS C
90 RL 2
VM RS VC
4
6
80
8
10
12.5
70 15
VC(DC) RS
(%) 20 (%)
VM RL
60 25
30
35
40
50
50
60
70
40 80
90
100

30
0.1 1 10 100 1,000
CRL, (C in farads, RL in ohms)
Figure 108. Relation of Applied Alternating Peak Voltage to Direct Output Voltage in Full–Wave
Capacitor–Input Circuits (From O.H. Schade, Proc. IRE, Vol. 31, 1943, p. 356)

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118
Rectifier Applications

Figure 108 shows that a full–wave circuit must operate RS. In order to control this turn–on surge, additional
with ωCRL ≥ 10 in order to hold the voltage reduction to less resistance must often be provided in series with each
than 10 percent and ωCRL ≥ 40 to obtain less than 2% rectifier. It becomes evident that a compromise must be
reduction. However, these voltage–reduction figures made between voltage reduction on the one hand, and diode
require RS/RL, where RS is now the total series resistance, surge rating and hence average current–carrying capacity on
to be about 0.1%. Such a low source resistance, if attainable, the other hand. If small voltage reduction–that is, good
causes repetitive peak–to–average current ratios of 10 to 17 voltage regulation–is required, a much larger diode is
respectively, as can be seen from Figure 109. Rectifier necessary than that demanded by the average current rating.
diodes can handle high repetitive peak currents but their An obvious solution to this problem is to avoid the use of a
rated average current must be derated. To aid designers, capacitor–input filter. The alternative of a choke–input
manufacturers often provide capacitive load derating data. filter, as discussed previously, may be more costly than the
The turn–on surge current generated when the input–filter cost of increased rectifier surge capacity.
capacitor is discharged and the transformer primary is A design example showing the use of Schade’s curve is
energized at the peak of the input waveform causes a surge given at the end of this chapter. For comparative purposes,
current determined by the peak secondary voltage less the Table 21 shows rectifier circuit values when ωCRL = 100
rectifier forward drop limited only by the series resistance and RS/RL= 2%.

10

7
F=IF(RMS)/IF(AV) (Per Diode)

0.02
5 0.05
0.1

% RS / nRL
0.2
0.5
3 1
2
5
2 10
30
100

1
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 1000
nCRL

40
0.02
30
0.05
IFM / IF(AV) (Per Diode)

20 0.1
0.2

0.5 % RS / nRL
10 1.0
7 2.0
5.0
5
10
30
100
3
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 1000
nCRL

n = 1 For Half–Wave Single–Phase Rectifier Circuits C in Farads


2 For Full–Wave Single–Phase Rectifier Circuits Rl in Ohms
 = 2 f, where f = Line Frequency RS = RMD Equivalent Source Resistance

Figure 109. Relation of RMS and Peak to Average Diode Current in Capacitor–Input Circuits
(From O.H. Schade, Proc. IRE, Vol. 31, 1943, p. 356)

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119
Rectifier Applications

Diode Peak Inverse Voltage The peak inverse voltage applied to the rectifiers in
The peak inverse voltage applied to the diodes in a capacitor–input systems is generally based upon the
rectifier system operating in conjunction with a capacitor charging to VM which is the case when the load is
series–inductance input depends upon the topology. It light and the capacitor large. However, the peak of the
ranges from as high as π times the dc component of the reverse voltage sine wave occurs sometime after the
output voltage, in the case of the single–phase center–tapped capacitor has been charged. The peak voltage the capacitor
connection, to barely more than the dc voltage in the attains is a function of the RS/RL ratio; the voltage on the
three–phase full–wave bridge. Results in typical cases are capacitor when a diode’s reverse voltage reaches its peak is
given in Tables 19 and 21 and are the same as those dependent upon the load time constant. The relationship has
determined for the resistive load circuits in Chapters 5 and been worked out for two cases as shown in Figure 111.
6.
100
70 Circuit Parameter
A
50 RS/RL (%)
A
30 0.1
Half–Wave 1.0
20 10
30
10 0.1
rf, Ripple Factor (%)

7.0 Full–Wave 1.0


10
5.0 30
A
3.0
2.0 A

1.0
0.7
0.5
0.3
0.2

0.1
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 1000

CRL (C in farads, RL in ohms)

Figure 110. Root–Mean–Square Ripple Voltage for Capacitor–Input Circuits


(From O.H. Schade, Proc. IRE, Vol. 31, 1943, p. 356)

2.0

1.8 CRL ­ 100

CRL = 10
1.6
PIV/VM

1.4

1.2

1.0
0.01 0.02 0.04 0.07 0.1 0.2 0.4 0.7 1.0
RS/RL

Figure 111. Ratio of Operating Peak Inverse Voltage to Peak Applied 60 Hz AC for Rectifiers Used
in Capacitor–Input, Single–Phase, Filter Circuits

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120
Rectifier Applications

Transformer Considerations third harmonic is 1/3, the fifth is 1/5, etc., that of the
The ratio of the actual dc rectified power output to the fundamental frequency.
volt–ampere capacity of the windings on the basis of Capacitive input filters cause a much higher current
sinusoidal waves, for the same heat loss due to winding harmonic content than choke input filters cause. The
resistance, is termed the transformer utilization factor (UF). harmonic content is particularly severe in transformer–less
Its value depends upon the rectifier connections and is, in single phase supplies because transformer leakage
general, not the same for the primary and secondary inductance is not present. Inductance in series in the rectifier
windings, since the waveshapes in these windings will widens the diode conduction angle and lowers the current
generally be different. Table 19 shows the reciprocal of the peak. A computer simulation of a single–phase bridge
UF of the primary and secondary windings for some of the rectifier with a capacitor input filter yielded the results
more commonly used rectifier connections. Derivation of shown in Table 20 [3]. The value of the filter capacitor is
the values is handled as shown for the resistive load circuits normally so large that small changes in its value do not alter
in Chapters 5 and 6. the results.
The wave shapes of the currents that flow through the

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Table 20. Harmonic Currents In a Single–phase
windings of the transformer in the idealized case of a
Full–wave Capacitor–Input Rectifier

ÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
rectifier system operating with an infinite input inductance

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
are shown in Figure 102 for two typical cases. Because these ZR*
waves are not sinusoidal, the heating of the transformer

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Harmonic 1% 2% 5% 10%
windings is greater for a given dc power output from the

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
3rd 83.0% 76.3% 63.5% 49.8%
rectifier than would be the case if the same amount of ac 5th 56.2% 42.4% 22.0% 10.2%

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
power were delivered by the transformer to a resistance load. 7th 29.2% 15.4% 8.1% 7.3%
It is accordingly necessary to design the transformer 9th 11.7% 8.7% 6.1% 3.8%
windings more generously for rectifier applications than for
cases where sinusoidal currents are involved.
Since transformer volt–ampere ratings vary with the rms
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
11th 8.6% 7.1% 3.5% 2.5%
*ZR = Ratio of source inductive reactance to load impedance at the
fundamental frequency.
content of the rectified circuit, they must be calculated for The bridge is used without a transformer when its output
each capacitive–input filter design. Higher RS/RL ratios is used by a switch mode dc–dc converter. In this case, the
help reduce transformer requirements. Also, the effects of harmonic problems are transferred to the transformer in the
transformer saturation and finite bandwidth cannot be electrical power distribution system feeding the equipment.
ignored. The former tends to limit the peak current while the For a single–phase circuit, it is possible to significantly
latter allows the capacitor to charge over a longer time and reduce harmonics fed into the power line by adding an
hence reduces the peak charging current i = C dv/dt. Core optimally chosen inductor in series with the line to widen the
saturation generally occurs on the recurrent charging peaks, conduction angle of diode forward current [4]. The inductor
and this will cause a lower output voltage than that is much smaller than would be required for the typical
calculated from the rated transformer secondary voltage. continuous conduction choke–input filter. An optimally
That saturation is occurring and that flattening is not due to chosen capacitor added across the line raises the power
the secondary–winding resistance can be determined by factor to approximately 0.9, which is the same as obtained
observing the voltage waveform induced in an unloaded with a typical choke input filter.
winding on the same core. Polyphase circuits behave differently. The larger the
choke, the lower the harmonics and the higher the power
factor. Increasing the inductor above a threshold does not
Harmonics offer any significant improvement in harmonics or power
Because the currents which flow in a rectifier circuit using factor.
a choke or capacitor input filter are not sinusoidal, high
values of harmonic currents are present. These harmonic Surge Current
currents complicate the design of the transformer and, in Because semiconductor junctions are limited in the
single–phase circuits, the harmonic currents flow into the amount of transient power that they can safely handle,
power line where they can cause a number of difficulties attention must be given to the surge current occurring when
with the power distribution system. In a polyphase rectifier, the circuit is energized. The expected behavior can be
the third harmonic can be kept from the powerline by having deduced by studying the equivalent circuit of the rectifier
the primary windings arranged in a delta configuration. The system shown in Figure 105(b).
circulating third harmonic component of primary current, of For analyzing a choke input filter, a choke is inserted
course, causes additional power loss in the transformer. between the switch and the capacitor C1. Before voltage is
The choke input filter causes a square wave of current to applied, C1 may be regarded as a short. Current buildup will
flow in a single phase circuit. A Fourier analysis indicates be governed by the L/RS time constant of the circuit. (L is the
that only odd harmonics are present and they decrease as 1/n, sum of the filter and transformer leakage inductance). The
where n is the harmonic number. Thus, the amplitude of the current surge is not significantly different than encountered

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Rectifier Applications

in normal operation, even if the input voltage is applied at a of peak–to–average current flowing through the rectifier
time when the voltage has reached its positive peaks, diode, and likewise the diode is less efficiently utilized. The
because the inductor has high reactance to fast rising characteristics of several popular rectifier systems are
transients. shown in Table 21.
The capacitor–input filter, however, allows a large surge Shunt capacitor–input arrangements are generally
to develop, because the reactance of the transformer leakage employed in most consumer equipment such as personal
inductance is rather small. The maximum instantaneous computers, radio and television receivers, high–fidelity
surge current is approximately VM/RS and the capacitor sound systems, or small public–address systems, when the
charges with a time constant τ=RSC1. As a rough–but amount of dc power required is small. They must be used
conservative–check, the surge will not damage the diode if with half–wave rectifiers and are attractive when the input
VM/RS is less than the diode IFSM rating and τ is less than the power is taken directly from the ac line without a power
time of one–half cycle. It is wise to make RS as large as transformer. In contrast, inductance–input arrangements are
possible and not pursue tight voltage regulation; therefore, used when the amount of power required is large, since then
not only will the surge be reduced but rectifier and the higher utilization factor and lower peak currents result in
transformer ratings will more nearly approach the dc power important savings in rectifier and transformer costs.
requirements of the rectifier load. Inductance input is often employed when good regulation of
the dc voltage is important but the precision of an electronic
regulator circuit is not needed. Inductance–input systems
Comparison of Capacitor–Input and are normal in polyphase rectifier systems.
Inductance–Input Systems
The basis for distinguishing between inductance–input Filter Sections
and capacitor–input systems is that in the former the current Figure 114 gives typical examples of filters that are placed
flows continuously from the rectifier output into the filter between the rectifier output and the load to make the current
systems, while in the latter the current flows intermittently delivered to the load substantially pure direct current. These
from the rectifier into the filter. Intermittent action is also filters are made up of series impedances (either inductances
present with inductance–input systems when the input or. resistances) that oppose the flow of alternating current
inductance is less than the critical value. When this is the from the rectifier output to the load and shunt capacitors that
case, the system is classified as a capacitor–input bypass the alternating currents that succeed in flowing
arrangement even though it possesses a series inductance. through the series impedances.
A comparison of the performance of inductance–input For purposes of discussion and analysis, filters are
and capacitor–input systems shows that, in the latter ordinarily divided into sections, each consisting of a series
arrangement, the dc voltage is higher, the ripple voltage impedance followed by a shunt capacitor, as indicated in
more, the surge current higher, and the voltage regulation Figure 114. In this classification, the inductance in an
poorer than when inductance input is used with the same inductance–input system is considered to be part of the first
diode, transformer, load resistance, and capacitance. Also, section of the filter. However, a shunt capacitance across the
with capacitor–input the ripple voltage increases with rectifier output is not included as part of a filter section, but
increasing load current, unlike the inductance–input system rather is considered to be part of the rectifier system, which
where the ripple voltage is independent of load current. The delivers to the first filter section a voltage corresponding to
utilization factor of the power transformer is much poorer the voltage developed by the rectifier across the input
with the capacitor–input system because of the higher ratio capacitor.

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Rectifier Applications
Table 21. Summary of Significant Rectifier Circuit Characteristics.

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Capacitive Data is for WCRL= 100 and RS/RL = 2.0%

ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Rectifier
Circuit Three–Phase

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ Connection Single–Phase Single–Phase Three–Phase Double–Wye Three–Phase
Single–Phase Three–Phase

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Full–Wave Full–Wave Half–Wave With Full–Wave
Characteristic Load Half–Wave Center–Tap Bridge Star Bridge Interphase Star

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Average Current

ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Through diode
IF(AV)/IL(DC) RL&C* 1.00 0.50 0.50 0.333 0.333 0.167 0.167

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Peak Current

ÁÁÁÁÁÁÁÁÁÁ
R

ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
3.14 3.14 3.14 3.63 3.15 3.15 6.30
Through Diode L*
ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ– 2.00 2.00 3.00 3.00 3.00 6.00
IFM/IF(AV)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
C
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
8.0 8.0 8.0 DATA NOT AVAILABLE

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Form Factor of R 1.57 1.57 1.57 1.76 1.74 1.76 2.46

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Current Through L* – 1.41 1.41 1.73 1.73 1.73 2.45

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Diode C 2.7 2.7 2.7 DATA NOT AVAILABLE
IF(RMS)/IF(AV)

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
RMS Current R 1.57 0.785 0.785 0.587 0.579 0.293 0.409
Through Diode
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
L* – 0.707 0.707 0.578 0.578 0.289 0.408
IF(RMS)/IL(DC)

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
C

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
2.7 1.35 1.35 DATA NOT AVAILABLE

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
RMS Input Voltage R&L 2.22 1.11 1.11 0.855 0.428 0.855 0.741

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
per Transformer
Leg Vi/VL(DC) C 0.707 0.707 0.707 0.707 0.408 0.707 0.707

ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁ
Voltage PIV ÁÁÁÁ
Diode Peak Inverse

ÁÁÁÁÁÁÁÁÁ
R&L

ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
3.14

ÁÁÁÁÁ
3.14 1.57 2.09 1.05 2.42 2.09

ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
VRRM/VL(DC) C 2.00 2.00 1.00 2.00 1.00 2.00 2.00

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Transformer
Primary R 3.49 1.23 1.23 1.23 1.05 1.06 1.28

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Rating VA/PDC L – 1.11 1.11 1.21 1.05 1.05 1.28

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Transformer R 3.49 1.75 1.23 1.50 1.05 1.49 1.81

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Secondary

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Rating VA/PDC L – 1.57 1.11 1.48 1.05 1.48 1.81
Total RMS Ripple % R 121 48.2 48.2 18.2 4.2 4.2 4.2

ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ
Lowest Ripple
Frequency fr/fsÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁ
1 2 2 3 6 6 6

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Rectification Ratio R 40.6 81.2 81.2 96.8 99.8 99.8 99.8

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
(Conversion
Efficiency) % L* 100 100 100 100 100 100
*Inductive data valid when the circuit input voltage is a square wave, resistive or inductive load. PDC = I2LRL (RS neglected) VL = ILRL

Voltage and Current Relations in Filters of the filter section. The current in the section is then
The input voltage to the filter is whatever output voltage Vi/(ωL– 1/ωC), where Vi is the alternating voltage applied
is developed by the rectifier connection in the case of across the input to the filter section. The voltage that this
inductance–input systems (it is the same as with a resistive current develops in flowing through the capacitor C is
load), or is the voltage developed across the shunt capacitor (1/ωC)Vi/ωL – 1/ωC) = Vi /ω2LC – 1). Dividing by Vi
in the case of capacitor–input systems. The ripple voltage in results in the following relationship for the voltage reduction
the output of the rectifier–filter system is then the alternating through an L–C section:
component of this input voltage reduced by the action of the Vo
filter sections. + 2 1 (7.6)
Vi  LC * 1)
Most filter sections are composed of a series inductance
and a shunt capacitance. In practical filters of this type, the where
reactance of the shunt capacitance at the lowest ripple L = series inductance of filter section
frequency is much smaller than the resistance of the load (or C = shunt capacitance of section
the reactance of the series inductance of the following ω = angular frequency of ripple voltage involved.
section). Substantially all ripple current entering the Results of Equation 7.6 are given in Figure 113 for the
inductance L of the section flows through the capacitance C usual case where the ripple components are harmonics of

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Rectifier Applications

60 Hz. Figure 115 indicates the actual ripple output of a resistance–capacitance filter reduces each frequency
full–wave single–phase rectifier circuit. component of voltage applied to the input side according to
When the current drawn by the load impedance is small, the approximate relation:
the series inductance of the LC filter may be replaced by a Vo
series resistance as shown in Figures 114(e) and 114(f). This + 1 (7.7)
Vi RC
arrangement is widely used in low–current applications such
as resistance–coupled amplifiers, tuned radio–frequency where
amplifiers, and so forth, and has the advantage that a R is the series resistance
resistance is much less expensive than an inductance of C is the shunt capacitance.
corresponding effectiveness. The disadvantage is the dc (See Figure 114(e)).
voltage drop and power loss that occur in the resistance; When a large amount of ripple reduction is required, more
these losses limit the resistance–capacitance type of filter to than one section is used because the total capacitance and
cases where the current is small and where a moderate dc inductance is less than that required for just one section. The
voltage drop is permissible. total reduction in ripple voltage produced by the several
In practical resistance capacitance filters, the reactance of sections is very nearly the product of the voltage–reduction
the shunting capacitor is always made small compared to the factors of the individual sections. The effectiveness of the
series resistance of the filter and to the impedance to which filtering accordingly increases rapidly with the number of
the output of the filter section is connected. The ripple sections. For many applications, a single section is entirely
current flowing in R is ViǠR2 + (1/ωC)2 ≈ Vi/R, where Vi is adequate, particularly with polyphase rectifiers. Only in
the ripple voltage applied to the section. The ripple output special cases, such as audio–frequency amplifiers with very
voltage of the section results from the current Vi/R flowing high gain, will the number of sections required exceed two,
through the reactance 1/ωC of the capacitance C of the and then only for those parts of the amplifier that operate at
section, and hence is Vi/RωC. Therefore, a section of very low signal–power levels.

Section Section Section

Rectifier L1 Rectifier L1 L2
C1 Load C1 C2 Load

(a) (b)

Section Section Section

Rectifier L1 Rectifier L1 L2
C C1 Load C C1 C2 Load

(c) (d)

Section Section Section

R1

Rectifier Rectifier L1 L2
C C1 C C1 C2

(e) (f)

Figure 112. Typical L and p Section Filters: (a) and (b) L–C Filters, Choke Input; (c) and (d) L–C Filters, Capacitor
Input; (e) and (f) Filters with Series Resistances

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Rectifier Applications

0.5 6.0

Output Voltage
Filter Reduction Factor = Input Voltage
f = 60 Hz

Filter Reduction Factor (dB)


0.2 14
120
0.1 20
180

0.05 26

240
0.02 34
360
0.01 40

0.005 46
1.0 2.0 5.0 7.0 10 20 30 50 70 100 200 500

L (Henries) X C (µfds)

Figure 113. Reduction in Ripple Voltage Produced by a Single–Section


Inductance–Capacitance Filter at Various Ripple Frequencies

100
5 Minimum Value of  i2 LC
to avoid resonance
2
10
rf, Ripple Factor (%)

5
2
1.0
5
2
0.1
5
2
0.01
10–1 2 5 1 2 5 101 2 5 102 2 5 103 2 5 104
 i2 LC

Figure 114. Ripple Factor for Single–Section LC Filter for Full–Wave Input

Graded Filters A graded filter reduces to the lowest possible value the
When the output of a rectifier–filter system is called upon magnitude of the currents that must be carried by the series
to supply voltages for several stages of an amplifier system, impedance arms of the filter and often makes it practical to
ordinarily the amount of ripple or hum voltage that can be use resistance–capacitance filter stages in parts of the
tolerated is least for those stages that operate at the lowest system, as illustrated in Figure 114. This results in
signal–power levels. This makes it desirable to arrange the substantial economy in cost, weight, and size compared to
filter system so that the voltages applied to different circuits an arrangement in which the entire rectifier output is subject
operated from the rectifier–filter system undergo different to the maximum amount of filtering. A graded filter also
amounts of filtering. provides isolation or decoupling between amplifier stages,
For example, the output stage of an audio amplifier thereby reducing regeneration.
obtains its collector voltage directly from the input
capacitor, which is permissible because of the high power Filter Component Selection
level at which the output stage operates, combined with the The inductors used in a low–frequency filter must have
hum–suppressing action of the usually used push–pull laminated iron cores with an air gap that is sufficient to
connection. Progressively increased filtering, is provided prevent the dc magnetization from saturating the core. The
for the lower level stages, care being taken to design the inductance that is effective in the filter is the incremental
system so that the reduction in ripple voltage introduced by inductance, which depends both upon the dc and the ac
the filter between stages is at least as great as the magnetizations of the core. In estimating the ac
amplification of the stages. magnetization that can be expected, it is normally assumed

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Rectifier Applications

that the alternating current flowing in the inductance is equal From the previous discussion, the power supply
to the voltage of the lowest ripple frequency applied across specifications are summarized in terms of the constants
the input of the filter section, divided by the reactance of the required:
inductance of the section. The alternating magnetization in 1.  = 2 f = 377 rad/sec
the inductance of the first section may be relatively large, 2. RL = VL(DC)/IL(DC)
whereas the alternating magnetization for the inductances of = 40/1.43 = 28  at full load
the other filter sections will be very small if the first section = 50/0.1 = 500  at idle
is at all effective. 3. VL(DC)(full load)/VL(DC)(idle) = 80%
The capacitors used in filters must be capable of 4. rf = 400 mV/50 V = 0.8%
continuously withstanding a dc voltage equal to the peak
voltage applied to the rectifier. Electrolytic capacitors are Passive Component Selection
ordinarily used where the peak voltages do not exceed 400 The choice of circuit is between a single–phase
to 500 V. Such capacitors have very low cost in proportion full–wave center–tap or a full–wave bridge circuit as
to capacitance, but they possess the disadvantage of a outlined in Table 16 in Chapter 5. The center–tap requires
limited life. Various types of plastic capacitors are usually only two diodes, but it has the disadvantages of requiring
used at higher voltages and also find use at lower voltages an additional winding, causing a poorer transformer
where long life is more important than low cost. utilization factor, and doubling the required voltage ratings
of the diodes. The deciding factor in favor of using the
Example of Power Supply Design bridge rectifier circuit is its higher secondary utilization
Information given in this chapter is used to design a power factor. This is an important consideration when using a
supply for an audio amplifier in a home entertainment capacitive input filter because high rms currents are
center. The dc supply voltage will be obtained from a 120 V, required from the transformer to obtain good output
single–phase line. Electronic regulation is not necessary, voltage regulation (i.e., a low RS/RL ratio is required).
economically feasible, or particularly desirable for such The curves shown in Figure 110 are used to find a value
applications. The supply will consist of a step–down for C to meet the ripple specification. To use the curves, it
transformer, rectifier diodes, and a capacitive–input filter as is necessary to estimate a value for the RS/RL ratio. This can
shown in Figure 116. be done by referring to Figure 108 and assuming that the idle
Design Constraints dc voltage equals the peak of the input voltage and that the
For this example, a supply is to be designed to meet the ωCRL product is large enough to place operation in the right
power requirements of a 20 W stereo amplifier (operating in hand plateau of Figure 108. Based on these assumptions,
a maximum ambient temperature of 55C) which must drive note that to hold VL(DC)/VM above 80%, RS/RL < 7%. If it
8–Ω speaker loads. The output power transistors are in a is desired to minimize1 C, then operation may move into the
totem–pole configuration and operate from a single dc knee region and RS/RL may need to be made considerably
supply. Theoretically, a 36 V supply would be adequate, but less than 7% to hold VL(DC)/VM to 80%.
a full load voltage of 40 V is required to make up for From Figure 110, at ωf = 0.8%, RS/RL = 1% (being
transistor and resistive losses. The average current drawn conservative), read ωCRL = 90. Therefore, C = 90/(377)
from both channels at rated power out (20 W per channel) is (500) = 496 µF and a standard value of 500 µF can be used.
1.43 A. To minimize distortion, idle current is 50 mA per A suitable value for RS to maintain the required voltage
channel. At zero signal, the ripple is critical and must be held regulation can be obtained by using Figure 108. Under full
to 400 mV maximum so that no hum is detectable. load with C = 500 µF, ωCRL = 5.2. Again assuming that the
Regulation is not critical, but it is desirable to keep the output voltage at idle equals the peak input voltage, which
no–load voltage below 50 V to ease the voltage requirements makes VL(DC)/VM = 80%, read RS/RL ≈ 3.5% at
of the output transistors. ωCRL = 5.2. Therefore, RS = (0.035) (28) ≈ 1.0 Ω. This
value may be largely composed of the sum of the
VL transformer secondary resistance, the reflected primary
+ resistance, and the diode dynamic resistance.
At idle, RS/RL = 1.0/500 = 0.2% and, as previously found,
ωCRL = 90. From Figure 108, VL(DC)/VM is read as 97%,
RS which verifies the validity of the assumption that at idle
C
VL(DC) = VM.

1In many cases, minimizing C will result in lower cost. However,


by choosing a larger value of C, RS may be increased to obtain
the same voltage regulation, with the beneficial effects of lower
– ruts and peak surge currents. The lower rms values may result in
lower cost for the transformer and diodes, so that the overall
Figure 115. Bridge Circuit Used for Example Design power supply cost is less.

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Rectifier Applications

Transformer Selection The diode bridge assembly has a surge current rating of 60
The peak output voltage developed across the capacitive A for one cycle; i.e., it will handle two 60 A, half–cycle (8.3
filter has been specified as 50 V, which requires a ms) surges. The worst–case peak surge current in this
transformer secondary rms voltage of 35 V. However, application is
because of the forward voltage drops across the diodes, a
VMńRS + 50ń1.0 + 50 A
standard 36 V transformer may be used. The transformer
volt–ampere rating is dependent on rms current, which can
The time of the surge is the time it will take to charge the
be obtained from Figure 109. At full load RS/RL = 3.5% and
capacitor, roughly the time constant of the series resistor and
ωCRL = 5.2. In full–wave circuits, n = 2, the value of
the filter capacitance, or
nωCRL = 10.4, and RS/RL = 3.5%, yielding a diode current
form factor of approximately 2.1. The load and secondary t [ RSC + (1.0) (500) F + 0.5 ms.
form factor, being full–wave, is l/√2 times the diode form
factor. Consequently, the transformer rating is Since the surge current is less than the rating and the time
is much less than one cycle, the bridge will be satisfactory.
VA + (36) (1.43) (2.1)ń Ǹ2 + 77.

Diode Selection
A diode bridge assembly is chosen for ease of installation. References
Since each diode’s reverse voltage is clamped by the filter 1. 1. J. Schaefer, Rectifier Circuits, John Wiley and
capacitor, the bridge voltage rating need only be sufficient Sons, Inc., New York, 1965, p. 258.
to handle a high line condition, typically 130% of nominal. 2. 2. 0. H. Schade, Analysis of Rectifier Operation,
In this application, 100 V diodes are adequate. Proc. IRE, Vol. 31, No. 7, July, 1943, pp. 343–344,
In choosing a bridge, the total output current of 1.43 A is 346–347.
used as a selection guide rather than average current per 3. 3. Robert H. Lee, Origin and Characteristics of
diode. A series of bridges with 2.0 A current ratings will be Harmonic Currents, Part I, Power Quality,
evaluated for this application. It is necessary to determine Volume 1, No. 5, 1990, pp. 349–351.
whether these bridges can handle the repetitive peak 4. 4. Arthur W. Kelley and William F. Yadusky,
currents into the filter and the initial surge current required Rectifier Design for Minimum Line Current
to charge the filter capacitor. Harmonics and Maximum Power Factor,
The steady–state peak–to–average current ratio can be Conference Proceedings of the Fourth Annual
obtained from Figure 109. With RS/RL = 3.5% and Power Electronics Conference and Exposition,
nωCR = 10.4, a peak–to–average ratio per leg of 7 is Baltimore, 1989, IEEE Document number:
interpolated. Consulting Figure 116, taken from the diode’s 89Ch2719–3.
data sheet, a peak–to–average ratio of 7 per leg yields a
maximum full–wave average current capability of about 1.7 EQUATION 7. 1
A at 55C, which exceeds the requirement comfortably.
is derived as follows:
2.0
Full–Wave Bridge Operation
ŕ
t+
IL(DC), DC Output Current (Amp)

V
1.6 DC component + M sin t d(t) + 2VM
t+0
Ripple component of
Resistive Inductive
1.2 Loads frequency nń2

ŕ
t+

Capacitive Loads + 2VM cos nt sin t d(t)


0.8
IFM/IF(AV) = 5.0 t+0

0.4
IFM/IF(AV) = 10
IFM/IF(AV) = 20 + 2VM ƪcos2 (n(n ** 1)1)t * cos2 (n(n )) 1)1) tƫ tt ++ 0
(Per Leg)

0
0 20 40 60 80 100 120 140 160 180 200
+ 2VM ǒn *2
*1
2
Ǔ
TA, Ambient Temperature (°C)

Figure 116. Derating Data for the Example In these equations n may have values 2, 4, etc.

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Rectifier Applications

Chapter 8

Rectifier Voltage Multiplier Circuits

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Rectifier Applications



 "  

 


Voltage–multiplying power supply circuits are often Conventional voltage–doubler circuits may be designed
employed when high–voltage sources are required, current from curves similar to those used for capacitor input filters.
demand is small, and regulation from the rectifier system is (See Figures 118 through 121.) Voltage doublers exhibit the
not too important. Voltage doublers are widely used in high inrush and peak repetitive currents encountered with
“universal input” line–operated equipment.
capacitive input filters. The source resistance, RS, must be
The principle of operation for all multiplying circuits is
chosen to limit the inrush current to a safe level.
essentially the same. Capacitors are charged and discharged
on alternate half–cycles of the ac supply voltage. The As an example, suppose approximately 200 V dc is
voltage at the output terminals is the sum of these voltages required from the ac line to supply a l kΩ load. A rectifier is
in series. Thus, the rectifier loading is necessarily capacitive, selected whose surge rating is 10 A. Ripple is not critical and
and high peak currents flow through the rectifier, much like it is desired to minimize capacitor size.
rectifier circuits with capacitor input filters. RS is selected from:

Voltage–Doubling Circuits
RS w VM(max)ńIFSM
The conventional full–wave voltage doubler is shown in
Figure 117. It is the most commonly used voltage–doubling, w (1.41)(130)ń10 (High line is taken as 130 V)
circuit. The circuit operates as follows: C2 is charged to VM w 19  (use 20 ).
through D2 and RS2 during the negative half–cycle of the
supply voltage. During the positive half–cycle, the supply Capacitor size is determined by using Figure 118, which
voltage charges C1 trough D1 and RS1. A voltage of 2 VM requires that VL(DC)/VM and RS/RL be calculated.
appears across the output terminals. The capacitors’ voltage
ratings must be greater than VM, and the peak voltage rating
of the rectifiers, VRRM must be greater than 2 VM. The ripple
frequency is twice that of the input supply. VL(DC)ńVM + 200ń(1.41)(117) + 1.21
(Normal line is taken as 117 V)
R S1 R S1 = R S2 RSńRL + 20ń1000 + 2%
C1 = C2 Read CRL + 7.0,
D1 NC + 7.0ńRL + 7.0ń(377)(10 3)
+ 18.6 F (Use 20 F).
2 VM

D2
R S2 With C = 20 µF ωCRL = 7.54 and the remaining circuit
information may be found:
VMsin t
From Figure 119, IFM/IF(AV) = 5.5
From Figure 120, If/IF(AV) = 2.2
Figure 117. Conventional Full–Wave Doubling Circuit From Figure 121, rf = 13%.

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Rectifier Applications
2.0 0
0.1
0.25
1.8 0.5
0.75
1.0
1.5
1.6
2.0

1.4
VL(DC)/VM

4.0
RS
%
RL
6.0
1.2

10
10
12

15
0.8
20

0.6
1.0 2.0 4.0 6.0 10 20 40 60 100 200 400
CRL, (C in Farads. RL in Ohms)
Figure 118. Output Voltage as a Function of Filter Constraints for Full–Wave Voltage Doubler

100

60

40
0.01
0.025
20 0.05
0.1
lf/IF(AV)

0.25
10 0.5 % RS
8.0 1.0 RL
6.0 2.5
5.0
4.0 15
50
3.0
2.0

1.0
0.2 0.4 1.0 2.0 4.0 10 20 40 100 200 400 1000 2000

ωCRL (C in Farads, RL in Ohms)

Figure 119. Peak Rectifier Current as a Function of Filter Constants for Full–Wave Voltage Doubler

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Rectifier Applications
10
8.0

6.0 0.01
0.025
0.05
I f / I F(AV)
4.0 0.1
0.25 R
S
3.0 0.5 RL
1.0
2.5
5
2.0 15
50

1.0
0.2 0.4 1.0 2.0 4.0 10 20 40 100 200 400 1000 2000

ωCRL (C in Farads, RL in Ohms)


Figure 120. rms Rectifier Current as a Function of Filter Constants for Full–Wave Voltage Doubler

100
50
20
rF, Ripple Factor (%)

10
5.0 RS/RL = 10% 0.1%

2.0
1.0
0.5

0.2
0.1
1.0 2.0 5.0 10 20 50 100 200 500 1000
ωCRL (C in Farads, RL in Ohms)
Figure 121. Ripple as a Function of Filter Constants for Full–Wave Voltage Doubler

In the cascade circuit (Figure 122), C1 is charged through The cascade voltage doubler has poorer voltage
D2 during the negative half–cycle. In the positive regulation because the charge on C1 must supply the charge
half–cycle, C1 in series with the input voltage charges C2 to C2; however, it has the advantage of a common connection
to a voltage of 2 VM, when RL is very large. The capacitor between the output and the input. To compare the two
C1 should be rated greater than VM, C2 greater than 2 VM, voltage–doubling circuits, the circuits may be evaluated
and the rectifier should have a peak inverse voltage rating using similar components. The resulting characteristics are
exceeding 2VM. The ripple frequency is that of the input. given in Table 22. Design curves have not been worked out
for the cascade circuit. It performs better when C1 is much
larger than C2.

Table 22. Voltage Doubling Circuit Characteristics

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁ
Vin
Circuit Volts Rs RL C VL(DC) IL(DC) rf

ÁÁÁÁÁÁÁÁ
Configuration
ÁÁÁÁÁ (rms) Ohms Ohms mF Volts mA %

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Conventional
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Cascade
117
117
20
20
1k
1k
20
20
255
160
205
160
12.0
16.0

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Rectifier Applications

“Universal” Input Circuit particularly for the universal input, ωCRL is chosen on the
Switchmode power supplies normally rectify the ac order of 50 or more and RS/RL is as small as practical in
power line mains directly without using a low–frequency order to obtain a high output voltage. For example, with
transformer. Isolation from the line is provided by the ωCRL = 100 and RS/RL = 1%, VL(DC)/VM is only 1.7 (from
high–frequency transformer in the power supply. Most Figure 118). To more nearly approach 2, RS/RL ratios are
manufacturers supply to the worldwide market place whose chosen on the order 0.25%. With RS/RL = 0.25% and
ac mains voltages and tolerances fall into two broad ranges: ωCRL = 100, VL(DC)/VM is a much more acceptable ratio of
90 to 130 V ac, and 180 to 270 V ac. 1.85. However, the rectifier peak–to–avenge current ratio
is now about 11. (See Figure 119) When switched to full
bridge operation, the filter capacitors are placed in series
C1 = C2
dropping ωCRL to 50. The curves in Chapter 7 reveal that
C1 D1 VL(DC)/VM = 0.96 and IFM/IF(AV) = 15, worse than during
RS
C2 RL 2 VM operation as a doubler.

VM sin ωt D2
Z

Figure 122. Cascade (Half–Wave) Voltage Doubling


Circuit Full–Wave Voltage Tripler Circuit AC

A popular means of accommodating both ranges is shown C1


by the circuit of Figure 123. When the switch is open, the
circuit operates as a full bridge rectifier. With 230 V ac input,
the dc output is approximately 320 V. When the switch is C2
closed, the circuit is configured as a full–wave voltage
doubler, producing about the same output with a 115 V ac
input. The switching power supply is designed to provide a
Figure 123. Dual Input Voltage Range Circuit
regulated output despite variations in the dc level caused by
operation over either ac input range. During turn–on, the low value of RS needed for good
Switching can be made automatic [1] in response to the doubler operation results in enormously high inrush current.
applied line voltage in order to eliminate power supply Consequently, universal rectifier circuits must use some
failure caused by having the switch or terminal straps in the method of having RS high at turn–on and low during
wrong position. For automatic switching, a triac is used for steady–state operation. Two schemes are presently used;
the switch. It is turned on by a circuit which senses when the one uses a negative temperature coefficient thermistor and
ac line peaks are below that produced by 130 V rms. To the other uses a triac.
simplify the design, integrated circuits such as the MC The thermistor is used in place of RS on Figure 123 and is
3423P overvoltage sensing circuit are available. chosen to have a room temperature resistance to limit inrush
The ripple is highest when the circuit is operating in the current to a safe value. As charging current flows, the
voltage–doubling mode. To conserve space and lower cost, thermistor heats; its temperature rise causes a corresponding
small capacitors are desirable. Therefore, high ripple on the drop in its resistance value. The time constant of the
order of 10 to 20% is often allowed; the switching supply thermistor must be longer than that of the rectifier filter for
reduces the ripple to a low value in its outputs. On the other this scheme to work. The disadvantage of the thermistor is
hand, in high–quality equipment designed to ride through a that it cannot respond to momentary interruptions on the ac
half or full cycle line voltage dropout, the filter capacitors line which allows a high surge current to flow when the line
may be somewhat oversized in order to provide the desired voltage reappears.
hold–up time. A more foolproof and commonly used scheme parallels
The preceding example illustrated the use of the curves RS – which is large – with a triac. A control circuit fires the
when maximum output voltage was not a design goal but triac when certain circuit conditions are met which insures
it was desired to minimize the capacitor size. In most cases, that the capacitors are fully charged.

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134
Rectifier Applications

Voltage Tripling Circuits diodes should also exceed 2VM. The ripple frequency of the
The full–wave voltage tripler shown in Figure 124 output voltage will be the same as the frequency of the
operates as follows. On the negative half–cycle of the applied voltage.
supply voltage, C1 and C3 (in parallel) charge to VM. On the As might be anticipated, the regulation and ripple of the
positive half–cycle C1 (in series with the supply voltage) cascade voltage tripler is inferior to that of the full–wave
charges to 2VM. Thus a voltage of 3VM will appear at the voltage tripler. For a comparison of the two circuits, refer to
output terminals of the circuit. The voltage rating of C1 and Table 23.
C3 must be greater than VM, and the rating of C2 must be
greater than 2VM. The diodes should be able to block at RS C1 D1
least twice the maximum peak value of the input supply
voltage. The ripple frequency of the output is twice that of
VM sin ωt D2 C2
the input. The output characteristics for the full–wave
tripler are shown in Figure 125.
RL 3 VM
The cascade principle may be extended to obtain a voltage
tripler as shown in Figure 126. The operation of the cascade C3
voltage tripler is quite similar to that of the cascade voltage D3
doubler circuit. The voltage rating of C1 should be greater
than VM and the voltage ratings of C2 and C3 should be
greater than 2VM. The peak inverse voltage ratings of the Figure 124. Full–Wave Voltage Tripler Circuit

500 40
C1 = C2 = C3 = 20 µF 36
Vin = 117 V (rms) RS C1 C2
VL(DC) Output Voltage (Volts)

RS = 20 Ω
Ripple Voltage (Volts rms)
400 32
28 D1 D3
VL(DC)
300 24 VM sin ωt D2
20
200 16
C3
12 RL
100 Ripple 8.0
4.0
0 3 VM
0
0 40 80 120 160 200
IL(DC), Load Current (mA)

Figure 125. Output Characteristics for the Full–Wave Figure 126. Cascade (Half–Wave) Voltage Tripler
Voltage Tripler Circuit of Figure 124.

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
Table 23. Voltage Tripling Circuit Characteristics

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ Circuit RL VL(DC) IL(DC) RL VL(DC) IL(DC) rf

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Configuration Ohms Volts mA rf Ohms Volts mA %

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Full–Wave
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Half–Wave
5.0 k
5.0 k
385
328
77
66
2.4
28.0
1.5 k
1.5 k
255
170
170
112
8.0
37.0

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135
Rectifier Applications

Voltage Quadruples The ripple on the output has a frequency twice that of the
The full–wave voltage quadrupler circuit of Figure 127 input. The voltage rating of C1 and C2 must be greater than
operates in the following way: Assume that the input supply VM while that of C3 and C4 must be greater than 2 VM. All
voltage is positive. This causes capacitor C1 to charge of the diodes must have a voltage rating greater than 2 VM.
through D2 to VM. Also, capacitors C4 and C2 in series with Output characteristics are shown in Figure 128.
D4 charge to VM/2 (assuming the capacitors are equal in The cascade half–wave voltage quadrupling circuit is
shown in Figure 129. The operation of this circuit is
value). The charging voltage polarities of C1, C2 and C4 at
basically the same as the other cascade networks. The
this point are shown in Figure 127. On the negative
capacitance of C1 should be high and its voltage rated above
half–cycle, C1 in series with the supply voltage charges C3
VM while the remaining capacitors and the diodes should be
through D1 to 2 VM. Also, capacitor C2 charges to VM rated above 2 VM. The ripple frequency of the output is the
through D3 with the opposite polarity than that shown in same as that of the supply.
Figure 127. On the next positive half–cycle, capacitor C4 is The regulation of the half–wave voltage quadrupler is
charged to 2 VM since the voltage across C2 and the supply inferior to the full–wave as might be expected. (Compare
voltage are in series. In addition, the charge on C1 is Figure 128 to Figure 130.) To improve regulation, the values
replenished. At this point, the output voltage across C3 and of capacitors C1 and C2 are increased. To illustrate this
C4 is 4VM. The next negative cycle replenishes the charge improvement, the output characteristics of the circuit of
on C2 and C3 and the next positive cycle replenishes the Figure 129 were obtained when all capacitors equal 20 µF
charge on C1 and C4. and 40 µF The results are shown in Figure 130.

D1
+
C3

D2
RS +
RL 4V
M

+
VM sin ωt C1
– D3
C2 *
+
– C4
– +
D4

Figure 127. Full–Wave Voltage Quadrupler


*Voltage Polarity is opposite to that shown when fully
charged. See text.

600 24
VL(DC) Output Voltage (Volts)

500 Output Voltage 20


Ripple Voltage (Volts rms)

400 C1 = C2 = C3 = C4 = 20 µF 16
RS = 20 Ohms
300 Diodes: 1N4003 12
VS = 117 Volts (Line)
200 8
Ripple
100 4

0 0
10 20 40 60 80 100
IL(DC), Load Current (mA)

Figure 128. Output Characteristics of a Full–Wave Voltage Quadrupler Circuit.

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136
Rectifier Applications
RS C1 C2

VM sin ωt D1 D2 D3 D4

C3 C4

RL

Figure 129. Cascade (Half–Wave) Voltage Quadrupler Circuit

600 60
C1 = C2
V L(DC) Output Voltage (Volts)

500 50

Ripple Voltage (Volts rms)


400 40 µF 40
Output
Voltage
300 20 µF 30

40 µF
200 20
Ripple 20 µF
100 10

0
0 20 40 60 80 100
IL(DC), Load Current (mA)

Figure 130. Output Characteristics of the Half–Wave Voltage Quadrupler Circuits

2VM 2VM

RS C1 C3 C5 C n1

VM sin ωt
C2 C4 C n2 Cn

2VM RL 2VM

Figure 131. n–Section Voltage Multiplier Circuit

High–Order Cascade Voltage Multipliers Thus, odd multiples of VM from the upper branch and even
In theory, the number of sections which can be added to multiples from the lower branch can be obtained with respect
the basic cascade circuit is unlimited, as illustrated in to ground.
Figure 131. In practice, the number of sections is limited
because the regulation becomes progressively worse as References
additional sections are added. 1. S.K. Tong and K.T. Cheng, External–Sync Power
Both even and odd multiples of VM can be obtained. The Supply with Universal Input Voltage Range for
capacitor connected to the supply charges to VM. The Monitors, ON Semiconductor Application Note,
remaining capacitors on that side of the circuit charge to 2 VM. AN1080.

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Rectifier Applications

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138
Rectifier Applications

Chapter 9

Transient Protection of Rectifier Diodes

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Rectifier Applications

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Rectifier Applications


  
  



In order to achieve the high degree of reliability already Consequently, silicon diodes are specified so that the
associated with silicon rectifier diodes, it is imperative to excursion of the junction temperature during expected
understand that the ratings are based on the absolute overloads can be calculated and thus held within proper
maximum rating system. With this system, ratings apply limits through circuit design and thermal management.
within a certain defined set of operating, test, or Fuses, circuit breakers, or protective circuitry are used to
environmental conditions, and degradation or failure may be protect rectifier diodes from excessive current.
caused by a combination of electrical or environmental
stresses, even though application of any one rating will not
Externally Generated Voltage Surges
Several years of work by many people in IEEE
impair the performance of the device. Ratings are
committees culminated in the publication of IEEE standard
established by extensive tests, including life–tests
587–1980, which describes “typical” transient conditions
conducted by the manufacturer, and are typically checked
occurring in unprotected power circuits. It addresses
during production by quality control sampling. The user transient voltages that exceed twice the peak operating
should be aware that there is no safety factor implied above voltage, with durations ranging from a fraction of a
each maximum rating, although manufacturers generally microsecond to a millisecond, and originating primarily
employ one. from system switching and lightning effects. Transients
Because of the intolerance of silicon rectifier diodes to shorter than 100 ns and long–duration surges that sometimes
voltage transients in excess of their ratings, a proper circuit exist on power lines are not covered by the standard. The
design generally requires some built–in means to afford safe standard also proposes tests which approximate the
operation. Therefore, it is imperative to discuss some of the real–world transient conditions for the purpose of
causes of voltage transients and means of limiting them. evaluating the survival capability of equipment connected to
Unwanted transient voltages, commonly referred to as ac mains. The IEEE standard was later adopted by ANSI and
surges, are present in all electrical and electronic systems. given the document number C62.41.
The origin of surges may be external to the electronic A major revision of the standard was issued in 1991,
equipment or surges may be internally generated by the upgrading it to a “recommended practice.” [1] Designers of
equipment’s electronic circuits. Surges are randomly power–line operated equipment should familiarize
created on the utility distribution system by lightning, themselves with its contents. The revised document, while
capacitor bank switching, start–up and shut down of retaining most of the original information, provides updated
electrical and electronic equipment, and fault clearing. and expanded information relevant to “typical” surge
These surges often have high energy and must be considered environments based upon location within a building.
Additional guidance is given on suggested specifications to
in the design of rectifier circuits operating from the utility
be used for equipment, based upon exposure level. The
mains. Internally generated surge voltages are usually
material which follows is based upon the main points of the
caused by rapid switching of current. The surge voltage
recommended practice, applicable to the design of a
produced is a result of energy stored in circuit and wiring
line–operated rectifier system.
inductance. Three location categories are defined: “A” and “B” for
Overcurrent can also lead to failure of semiconductor indoor applications, and “C” for outdoor applications. The
diodes. The small thermal mass associated with silicon location categories are further defined in Figure 132. They
devices allows the junction temperature to rise and fall very take into consideration the increase in power–line
rapidly during a current surge and remain undetected by an impedance to high–frequency surges from the outside to
external thermocouple. If, during this event, the junction locations well within the building. Most consumer
temperature exceeds the maximum rated value, the device electronic equipment can be expected to find use in location
may fail destructively (short) as a result of thermal category A while industrial commercial equipment is often
breakdown. likely to be used in category B locations.

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Rectifier Applications

(a)

Meter

Service
(b) Entrance
Outbuilding

Meter

Service
(c) Entrance
Outbuilding
Transformer
Meter

Underground Service

A B C
Outlets and long branch circuits. Feeders and short branch circuits Outside and service entrance
All outlets at more than 10 m (30 ft) Distribution panel devices Service drop from pole to building
from Category E Bus and feeder in industrial plants Run between meter and panel
All outlets and more than 20 m (60 ft) Heavy appliance outlets with “short” Overhead line to detached building
from Category C connections to service entrance Underground line to well pump
Lighting systems in large buildings

Demarcation between Location Categories B and C is arbitrarily taken to be at the meter or at the mains disconnect (NEC
Art. 230–70 [B2]) for low–voltage service, or at the secondary of the service transformer if the service is provided to the user
at a higher voltage.
Figure 132. Location Categories

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Rectifier Applications

A summary of data taken on the rate and magnitude of short form nomenclature for an impulse wave is tr/td where
transient voltage occurrence is provided. Transient tr denotes the rise time and td denotes the pulse width,
occurrence varies over wide limits depending upon the defined at the point where the amplitude has decayed to 50%
power system, its loading, and the amount of lightning of its peak value. Thus the combination wave has a 1.2/50 µs
activity. Data collected from many sources have led to the open–circuit voltage and an 8/20 µs short–circuit current.
plot shown in Figure 133. This prediction shows only the The impulse wave deposits substantial energy in a
relative frequency of occurrence, while the number of surge–protective device and is usually chosen to specify
occurrences can be described only in terms of low, medium, protector performance. For example, Underwriters
or high exposure. These exposure levels are defined in Laboratories (UL) has chosen the standard’s combination
general terms as follows: wave to test portable power taps (i.e., power strips) having
1. Low Exposure. Systems with little load switching surge–protective devices.
activity, that are in geographical areas known for
low lightning activity. V
2. Medium Exposure. Systems in geographical areas V peak
0.9 V peak
known for medium–to–high lightning activity
and/or significant switching transients.
3. High Exposure. Rare but real systems subject to
severe switching transients and/or extensive 0.5 Vpeak
lightning activity. 0.3 V peak

10 3 *Clearance
Sparkover T1
50 s

T 1 x 1.67 = 1.2s
Number of Surges Per Year Exceeding

10 2
(a) 1.2 x 50 sec Impulse
Surge Crest of Abscissa

I peak
1
0.9 I peak
10
High
Exposure
0.5 I peak
1
Medium
Exposure 0.1 I peak

T2
10 –1 20 s

Low T2 x 1.25 = 8 s
Exposure
(b) 8 x 20 sec Impulse
10 –2
V peak
0.3 0.5 1 2 5 10 20 0.9 V peak

*In some locations sparkover of clearances may limit the T = 10 s (f = 100 kHz)
overvoltages to lower levels
Figure 133. Annual Rate of Occurrences
at Unprotected Locations
Two recommended standard test waveforms are defined 0.1 Vpeak
as shown in Figure 134. The first test wave is called a
combination impulse wave; its open circuit voltage and 0.5s
short circuit current are shown in Figure 134(a) and
Figure 134(b) respectively. The second test wave is a ring
wave as shown in Figure 134(c).
Impulse waves have been in use for many years to test 60% of V peak
lightning arrestors and high–power surge suppression
(c) 0.5 s – 100 kHz Ring Wave
devices, because impulses are characteristic of the
waveform produced by lightning strikes to power lines. The Figure 134. Standard Test Waveforms Defined

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Rectifier Applications

Based upon a consensus of engineering experts, the 1 kV, 2 kV, or 4 kV depending upon the severity level
amplitudes expected for various combinations of location desired.
categories and exposure levels are shown in Table 24. The High–energy surges have been added to the menu of
information is taken from the updated version of C62.41; in waveforms. The 10/1000 µs impulse is suggested as typical
the original version, only the high exposure levels were of lightning–induced pulses traveling in long underground
suggested. The revision recognizes the significance of cables, surges generated by fuse blowing in long cables, and
system exposure as well as equipment location categories. the envelope of the oscillation caused by capacitor bank
The ring wave is typical of most disturbances within a switching. A 5 kHz ring wave is also suggested as typical for
building because transient energy excites the natural the oscillation caused by capacitor bank switching.
resonant frequency of the wiring system. In practice, the The levels and impedance values chosen for testing with
frequency can vary from a few kilohertz to a few hundred the high–energy surges are shown in Table 25. Building
kilohertz. The fast rise time is used because equipment using location categories do not apply because the building wiring
thyristors is prone to false triggering with high dv/dt, and fast does not significantly attenuate the low–frequency surges.
rising wavefronts can cause a nonuniform voltage Levels of test voltages and source impedance of the surges
distribution in windings. The 0.5 µs/l00 kHz ring wave is are based upon system exposure and the system voltage. For
therefore primarily aimed at evaluating equipment example, the peak total voltage developed by fuse clearing
immunity to fast wavefronts and high–frequency occurring near the peak of the power line voltage, for a 120
disturbances. Since the ring wave is not intended to check V rms line in an industrial environment, is the sum of peak
energy capability, its effective source impedance is chosen line voltage and peak transient voltage. That is:
much higher than that of the combination wave.
Vtotal + 120 Ǹ2 ) (1.3)(120) Ǹ2 + 390 V
Fast–rising surges are produced on power lines by
opening airgap switches such as relays and contactors. In reviewing the data presented, it is obvious that the
Although fast transients are attenuated rapidly with distance transient voltage levels are highly site dependent. The
by the impedance of the power line, equipment in close dilemma a designer faces is to provide sufficient transient
proximity may be affected. A common situation occurs protection to equipment to insure a reasonable survival rate
when two pieces of equipment are powered from the same without adding excessive cost, although the location where
duplex receptacle. Switching off the power to one will the equipment will be used and the severity of the exposure
couple a high–frequency transient to the other, possibly level is not known. A reasonable solution to the dilemma is
causing a malfunction. The waveform chosen to represent to design for a category B, medium exposure level. Users
the fast transient is a 5/50 ns impulse applied in a burst located in high exposure sites have no doubt experienced
having a duration of 15 ms. It is delivered by a generator troubles with all electronic equipment and have installed
having a 50 Ω source impedance with a peak amplitude of surge protective devices throughout the facility.

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ
Table 24. Suggested Levels of Standard Voltage and Current Surges

ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ
Location
ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
System
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ Peak Peak
Ring Wave
Effective Peak
Combination
Effective

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Category Exposure Voltage Current Impedance Current Impedance

ÁÁÁÁÁÁÁÁÁÁÁ
A
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Low
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Med
High
2 kV
4 kV
6 kV
67 A
133 A
200 A
300
300
300





ÁÁÁÁÁÁÁÁÁÁÁ
B
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Low
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Med
2 kv
4 kv
167 A
333 A
120
120
1 kA
2 kA




ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
High 6 kV 500 A 120 3 kA
C Low 6 kV – – 3 kA 

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Med
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
High
10 kV
20 kV




5 kA
l0 kA



ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Table 25. Suggested Levels for High Energy Surges

ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ
10/1000 ms Impulse 1.5 ms/5 kHz Ring Wave

ÁÁÁÁÁÁ
System Exposure Peak Surge Exposure Peak Surge
Exposure Definition Voltage Impedance Definition Voltage Impedance

ÁÁÁÁÁÁ
Low
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Residential
ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
– – Far from
Switched Bank
– –

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Medium Commercial 1.0 Vpk 1Ω Typical 1.0 Vpk 1–5 Ω

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
High Industrial 1.3 Vpk 0.25 Ω Near Large 1.8 Vpk 0.5–1.0 Ω
Switched Banks

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Internally Generated Voltage Surges PS


Normal equipment operation generates surge voltages. In Switch
practice, the possibilities are almost endless; the circuit A
designer must astutely analyze the transient–generating
potential of a particular system in their electrical B Load
environment. A few situations, however, are quite common. May Have Stray
Inductance or
When transformers feed rectifiers from the ac power line, Capacitance
several mechanisms for generating transients exist. A
generalized lumped circuit model for a transformer is shown
in Figure 135. It should not be taken too literally because the +
elements shown are actually distributed in nature. However,
the model allows several effects to be visualized. V Line

C PS

+

RP LP LS RS
VAB
CP LM CS ZL Switch
R CL VAB – Closed

Figure 136. Situation where Transformer


Interwinding Capacitance Couples a Transient to the
RCL = core loss representation Secondary
Lm : primary magnetizing inductance
Rp : primary winding resistance
Lp : primary winding leakage inductance
Opening the primary circuit may generate even more
T : ideal transformer extreme voltage transients resulting from the collapse of the
Ls : secondary winding leakage inductance magnetic flux in the core, represented by LM in Figure 135.
R : secondary winding capacitance A worst–case situation is shown in Figure 137 where switch
ZL’ : secondary load impedance opening occurs at the time of zero voltage crossing of the ac
CPS : primary to secondary interwinding capacitance
CP : primary winding capacitance
line. At this time, the magnetizing flux is at its maximum and
CS : secondary winding capacitance its collapse may produce a transient, an order of magnitude
higher than the normal secondary voltage. In practice, the
Figure 135. Broadband Circuit Model of a Transformer generated surge voltage is not as clean as shown because of
switch arcing.
Note that the interwinding capacitance (CPS) and the
secondary winding capacitance (CS) form a capacitive
divider. Depending upon transformer construction, their Switch
ratio may vary widely. The winding techniques commonly A
used for 60 Hz applications allow CPS to exceed CS. AC IM
Line
Consequently, if a voltage step is applied at the input, such B
as with a switch closure occurring at the peak of the ac line, Load
it is possible for a voltage surge almost equal in amplitude
to the peak ac primary voltage to appear across the
secondary terminals. Since the surge is not directly related
to the turns ratio, the rectifier reverse voltage may be many Line
times the normal peak inverse voltage when a stepdown Voltage
transformer is used. It should be evident that any line voltage
Magnetizing
surge with a fast rise time will also be coupled through the Current and
interwinding capacitance and appear at the secondary Flux
without much attenuation.
In addition, because of system resonance the input voltage Secondary
Voltage Switch
step usually generates a damped oscillatory transient with a
Opened
peak amplitude possibly as high as twice the normal
secondary voltage. The frequencies of oscillation are
Figure 137. Typical Situation Showing Possible
determined by the values of the parasitic reactances in the
Transient when Interrupting Transformer
transformer and its load. The effects just described are
Magnetizing Current
illustrated in Figure 136.

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Rectifier Applications

Switching of loads on the output of a rectifier can cause Transients from lightning and many other sources enter
transients to be developed across the diodes, as shown in the power system as a current source. The high surge
Figure 138. The inductance LEQ represents the equivalent voltages observed across power lines are the result of high
inductance of the power source, consisting of wiring surge currents flowing through the loads across the line. In
inductance plus leakage inductance if a transformer is order to prevent generation of high voltages, it is generally
present. A short across Load 2 causes a very high current to desirable to use an MOV directly across the line to divert the
be drawn which stores a large amount of energy in LEQ. surge current back to its source, as shown in Figure 140. If
When the fuse blows causing a rapid decrease in current, the the voltage across the varistor is too high for the downstream
inductance generates a voltage of Ldidt having an energy of electronics, an inductor is used to restrict the current flowing
LI2/2. A similar but less severe effect occurs when normal into the rest of the circuit. A second MOV or other
loads are intentionally switched off. voltage–limiting device is used to hold the voltage at the
circuit to the desired level. When a rectifier circuit with a
L EQ capacitor input filter is in a medium exposure environment,
Fuse
it may perform the function of the second clipper.
AC A +
Supply
Short
across
Load Load Load 2
B 1 2

Restrict
Fusing
Options
+
VI Divert VO
0
VAB
Clip
(Clamp)

Figure 138. Transients Caused by Load Switching Figure 140. Functions of Elements Used in a
Protection Network
Surge Protection Circuits
Effective control of transient voltage surges in equipment MOVs are well suited to handle the l00 kHz ring wave and
used on ac power lines invariably uses a metal oxide varistor the 8/20 µs impulse associated with the majority of transient
(MOV). It can handle a large amount of transient energy for activity. But they cannot handle the high energy of the less
its weight, size, and cost. Service life is long, if properly frequent long waves typical of fuse blowing, capacitor bank
applied. MOV characteristics are shown in Figure 139 for a switching, and line voltage swells. If the downstream
part suitable for use across a 120 V ac power line. It is circuits can be designed to handle these long duration
bi–directional and exhibits a fairly sharp breakdown, which surges, which may approach twice nominal line voltage,
helps limit voltage surges. MOVs which break down at twice the line voltage peak can
be used. This approach has a long history of success in the
design of semiconductor based systems used in electric
utility applications.
In cases where the downstream circuits cannot be
+ designed to be cost–effective with a twofold voltage
margin, MOVs which clamp at lower levels may be used;
however, the MOV is likely to become a sacrificial element
I 0 when a long–duration surge is encountered. The designer
is faced with trading off the cost advantages of using lower
voltage downstream components against the increasing
probability of protective device failure as the clamping

voltage is lowered. [2] The breakdown voltage of the
varistor, as an absolute minimum, must be above the peaks
of a high line voltage. For example, a l40 V(rms) rated MOV
is the minimum suitable for a 120 V nominal power line in
0 the U.S.
– +
Fusing the equipment is important because when an MOV
V fails, it fails as a short. However, the resulting fault current
Figure 139. Typical V–I Characteristic of an MOV will open the device, possibly violently.

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Rectifier Applications

Two fusing options are shown in Figure 140. Placing the feed–through capacitance, or else a small high–frequency
fuse in series with the input line insures that the equipment inductor can be placed in series with the low–frequency
is never operated without protection. If the line fuse is sized filter inductor. The circuit should be tested to determine how
to handle high power equipment or equipment having a much surge voltage is coupled through the transformer; the
substantial inrush current, the varistor may rupture when surge may not follow the turns ratio.
shorted before the fuse has time to open. To avoid this The popular “universal input” single–phase rectifier
situation, a rugged varistor should be selected which can adapted to include transient protection is shown in
handle the line fault current for enough time to cause the line Figure 142. Tests have shown the importance of matching
fuse to blow. the varistor voltage to the incoming line voltage and have
Placing the fuse in series with the MOV permits the indicated typical performance when a 2000 A, category B,
equipment to continue operating but without protection. 8/20 µs current surge is applied [3]. With R1 = 0.5, L1 = 100
This approach is risky, but has merit when the downstream µH, and C1 = C2 = 540 µF, the 2000 A surge caused the 320
circuits are able to handle some transient voltages without V dc output voltage to rise by 74 V. In many cases, the
degradation. An additional risk introduced when the fuse is
following circuits can be designed to handle this extra
used in series with the varistor, is that of the surge caused by
voltage.
fuse blowing. During the time the varistor is shorted,
The inductor may be used as part of the EMI filter
sufficient energy may be stored in the upstream line
commonly required on equipment. It is also possible to use
inductance to cause a damaging voltage surge at the input
terminals to the rectifier circuit. To minimize the surge at a second section of suppression to make the circuit almost
fuse blowing, a fast–acting or current–limiting fuse should immune to transients, while the inductors also serve as the
be used. normal mode and common mode EMI filters [4]. Such a
An example of applying surge suppression to a circuit is shown in Figure 143. With a 3000 A 8/20 µs surge,
three–phase circuit is shown in Figure 141. The MOVs the transient voltage on the output filter capacitors is a mere
across the input lines serve as the diverters. The filter choke 10 V. The peak inverse voltage across the rectifier is
provides the restrict function, and the filter capacitor also determined by the peak limiting voltage of the MOV The
serves as the clipper. Since these filter components are large, EMI filter provided over 100 dB of attenuation from 6 kHz
the surge voltage limited by the MOVs is greatly attenuated to 50 MHz, differential mode, and from 6 kHz to 12 MHz
at the dc output. Consequently, it is usually possible to select common mode. Good filter and surge suppression
the MOV breakdown voltage to exceed twice that of the performance is dependent upon the coils. They need high Q
nominal line voltage peaks. The inductor must be effective over a broad frequency band and must be wound to minimize
for the 8/20 µs pulse. It will need to be wound to minimize shunt capacitance.
L1 R1

D1
C1

S1
S2
D2 C2

Figure 141. Transient Suppression in a Figure 142. MOV Protection for a


Three–Phase Rectifier Universal Input Rectifier

R3 L3
L1 R1
TZ 1 C F1
C1 C3
M1 M3

L CM

C2 TZ 2
M2 C F2
M4 L2 R2 C4
R4 L4

Figure 143. A Transient Suppression and EMI Filter Integrated with the Rectifier Circuit

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Rectifier Applications

Surge Current Protection crowbar; the scope may be triggered by the same signal
High current surges cause rapid heating of the which fires the SCR.
semiconductor die. If reverse voltage is applied while the
rectifier junction is above its rated temperature limit, a short Fusing Considerations
may result from the combined stresses. Furthermore, even Basic operation of a fuse is as follows. When a current
when little or no reverse voltage is present, excessive larger than normal is applied to a fuse, it starts to heat up
significantly because power dissipation is proportional to
temperature can weaken the bond of the die to its package,
the square of current. If this current continues, the fusible
causing thermal resistance to increase with time in service.
element or link eventually reaches its melting point. As the
A long term thermally regenerative process occurs, leading
link melts, voltage builds up across the fusible material
to diode destruction. In some cases, excessive current may
which causes arcing. Arcing continues until enough of the
cause the lead material between the rectifier terminal and the
link has melted so that the applied voltage can no longer
die to fuse.
jump the gap. At this time current flow through the fuse
The type and extent of protection needed is determined by stops. This basic operation is shown in Figure 144. The solid
the circuit characteristics and performance required. Circuit line shows the actual fault current due to the limiting action
characteristics are roughly divided into two main types, and of the fuse and circuit impedance. The dashed line shows the
the extremes are: available fault current that would flow without the fuse. As
• Type 1: Circuits with current limiting impedance shown, melting of the fuse starts at point A. Typically, the
• Type 2: Circuits without current limiting impedance current rises to a peak let–through current as shown at point
These types are subdivided according to circuit B and then decays through the impedance of the arcing fuse
performance requirements as to whether or not service may to zero at point C. The time from point B to point C is the
be interrupted upon failure of a diode. Since all circuits arcing time of the fuse. The melting time and the arcing time
contain a certain amount of impedance, how a given circuit together make up the total clearing time of the fuse. Clearing
is classified depends on both circuit impedance and rectifier time is often called blowing time.
diode ratings. In general, a circuit is classified as Type 1 if
the circuit impedance will keep fault currents below the Peak Available
single–cycle surge current rating of the rectifier diodes Let–Through
Current
(IFSM), and as Type 2 if the circuit impedance allows fault
currents to go over the diode surge rating. Type 1 circuits
may be protected with conventional fuses or circuit breakers
Current

chosen to open at currents below the surge current ratings of


the rectifier diodes. Type 2 circuits, low impedances, are B
desirable from the standpoint of efficiency but require A Peak Let–Through
Current
special fast–acting protective elements.
Current surges in rectifier circuits result from the
following factors:
1. Capacitor in–rush C
2. Direct current overload 0
Melting Arcing
3. Direct current short (fault) Time Time Time
4. Failure of a single rectifier diode
Capacitor in–rush is easy to observe and calculate and is Clearing Time
discussed in Chapter 7; the other problems require some
heroism in order to observe circuit conditions. Simulation of Figure 144. Action of a Fuse in a Circuit Subjected to
the fault may often be accomplished by using an SCR as a a Current Surge

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Rectifier Applications

Three basic types of fuses are available: normal–acting or time I2t (the effective energy that the fuse will let through)
medium–acting, fast–acting, and slow–acting (often decreases as a fuse is used below its rated voltage.
referred to as “slo–blo”). The different behavior of the
fast–acting and the normal–acting fuse is caused by the 150
material used for the link (this is the part of the fuse that 140

Percent of Rating or Blowing Time


Effect on Carrying
melts) that results in the fast–acting fuse having a smaller 130
Capacity Rating
thermal inertia. Similarly, the “slo–blo” fuse has a larger 120
thermal inertia than the normal–acting fuse which results 110
from use of a low–temperature melting point alloy and a heat 100
sink. Figure 145 shows the general blowing time 90
relationship for the three types at various overload 80 Effect on Blowing Time
conditions. Note the large blowing time required for the 70
“Slo–Blo”
“slo–blo” compared to the other two. It is because of this 60
Medium & Fast Acting
difference that only medium–acting and preferably 50
fast–acting fuses are used to protect rectifiers. The 40
fast–acting fuses are sometimes called current–limiting 30
–60 –40 –20 0 20 40 60 80 100
fuses because of their fast blow times, although all fuses
could be regarded as current limiters. Ambient Temperature (°C)

Figure 146. Action of a Fuse in a Circuit Subjected to


a Current Surge
800
There are two common ways to select a fuse. One way is
700 to compare the fuse and rectifier on the basis of surge
Percent of Rated RMS Current

Medium “Slo–Blo”
600
currentthat is compare peak let–through current and rectifier
Acting surge current for a given fault current. Another way is to base
500 the analysis on thermal energy, I2t. It has been shown [6] that
400
essentially equivalent heating occurs in a fuse and in a
rectifier for a unit of I2t where the I2t of the fuse is based on
300 a triangular surge current waveform and the I2t of the
200 rectifier is based on a sinusoid waveform. Based on this
Fast Acting second approach, the following steps can be used as a guide
100 for fuse selection:
0
1. Select a fuse with a current rating which is slightly
0.001 0.01 0.1 1.0 10 100 1k 10 k 100 k higher than the current flowing through the
Blowing Time (Seconds) rectifier under normal conditions. (Remember, this
is an ac rms current rating.)
Figure 145. Chart Showing the Relation of Percent of
Rated Current to Blowing Time for Typical Fuses 2. Check the voltage rating on the fuse to insure that
it is equal to or greater than the maximum circuit
voltage.
The best type of fuse in the fast–acting category is the 3. Estimate or measure the available fault current.
silver–sand or semiconductor fuse. As the link (usually Since it is circuit dependent, it can be found
made of silver) melts, the arcing caused by the voltage analytically by dividing the source voltage by the
developed across the fusible material is quenched by sand system impedance with the fault placed in the
crystals placed around the silver link. The sand effectively system.
lengthens the arc path. The particular size of the sand 4. With this information, the fuse tables are used to
crystals is selected on the basis of the voltage and current find the worst–case peak let–through current, IPLT,
ratings of the fuse. Fuses are available which limit fault and the total clearing energy, I2t, for the selected
current to as low as four times normal rated current. fuse. A word of caution: fuse ratings are somewhat
Fuses are sensitive to changes in current and temperature dependent upon mounting hardware. If a
not voltage. Figure 146 shows the effect changes in ambient nonstandard mounting is used, consult the fuse
temperature have on the current rating and blowing time. A manufacturer to see if there is any change in the
fuse may be used at any voltage up to its maximum rating fuse ratings.
without any influence on the fuse’s performance. Only after 5. Using the latter two parameters and assuming a
the link melting temperature is reached and arcing occurs in triangular model for fuse current, find the total
the circuit, are voltage and available power an influence on clearing time by using the formula:
the fuse performance. It has been shown [5] that the clearing tc + 3I 2tńI 2PLT (9.1)

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Rectifier Applications

6. Obtain rectifier data required for this comparison IFSM at 1 cycle is specified at 3600 A. Using Equation 9.2,
(a plot of I2t versus pulse base width). If surge
current ratings, IFSM, have been given instead, I2t: I 2t + I 2FSM(tń2) + (3600) 2(8.3 ms)(10 *3)ń2 + 54 10 3A 2s
can be calculated using the formula:
This value is twice the value of 27,000 given on the data
I 2t + I 2FSM(tń2) (9.2)
sheet, thus showing that I2t decreases by a factor of two
The rectifier sub cycle I2t ratings versus pulse width plot going from a pulse width of 8.3 ms to 1 ms, a not unusual
linearly on log–log paper. situation.
7. Compare: With time as the independent variable, When circuit requirements are such that service is not to
and knowing the I2t for both the fuse and rectifier, be interrupted in case of failure of a rectifier diode, the
it is now possible to determine if the rectifier is general approach is to use a number of diodes in parallel,
actually protected. each with its own fuse. Additional fuses or circuit breakers
8. Put the fuse in the circuit, short the load or are used in the ac line and in series with the load for
simulate the fault, and see if the rectifier is protection against dc load faults. Fuse values should be
protected. Surge current should be examined on an coordinated so that a diode fuse will open in the event of
oscilloscope. diode failure before the line fuses, the load fuses, or circuit
breakers open. In the event of load faults, line or load
EXAMPLE
Fault current = 3000 A elements should open before any of the diode fuses open.
Rectifier I2t = 27,0000 A2s from 1 to 8.3 ms Such a system is illustrated in Figure 149.
Load fuse rating = 150 A (TYPE KAX) Fuses are typically rated for use in ac circuits. When used
For the 3000 A fault current, the total clearing I2t and peak in dc circuits, the voltage ratings are typically half of the ac
let–through current are found from Figures 147 and 148 to rating. Some manufacturers offer fuses specifically
be 9500 A2s and 2000 A. Using Equation 9.1, the clearing designed for use in dc circuits, which are much more
time is found as follows: difficult to interrupt than ac circuits. There are subtle factors
affecting fuse operation in dc circuits [9].
tc + 3I 2tńI 2PLT + (3)(9500)ń(2000 2) + 7.1 ms Redundant systems often need additional transient
Thus, the fuse will blow before the rectifier at a peak fault protection because fuse blowing causes a transient in the
current of 2000 A. If the I2t of the rectifier had not been circuit upstream from the fuse. In the circuit of Figure 149,
given, it could have been found using the IFSM rating. an MOV across all six rectifier banks is normally required.

700 k 800
700
500 k
600
Total Clearing I2t (RMS Value) (Amperes Squared–Seconds)

300 k
500
200 k 400
Fuse RMS Ampere Rating

100 k 300

70 k 250

50 k

30 k 200

20 k

150
10 k
100
7000
50
5000

3000
1000 5000 10 k 20 k 50 k 100 k
RMS Symmetrical Current in Amperes

Figure 147. Total Cleaning Ampere Squared Seconds versus Available Fault Current, Type KAX Fuse

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150
Rectifier Applications
Fuse RMS
Ampere Rating
30 k 800
20 k 600
500
Type: KAX Voltage Rating: 250 V 400
300

IPLT, Instantaneous Peak Let–Through Current (Amps)


10 k 250
225
7000 200
150
5000 100
80
3000 50
2000
60
40
1000 30
15
700
10
500
5.0
300
2.0
200

100
70
50
30
30 50 100 500 1000 5000 10 k 50 k 100 k

RMS Symmetrical Current in Amperes

Figure 148. Peak Let–Through Current versus Available Fault Current, Type KAX Fuse

C C C

B B B B B B B B B
A E

EE
A
E
A E

B B B B B B B B B

C C C

Figure 149. Fuse Placements in a Redundant System

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Rectifier Applications

References 6. Emil T. Schnoholzer, Fuse Protection for Power


1. IEEE Surge Protective Devices Committee, Thyristors, IEEE Transactions on Industry
Recommended Practice on Surge Voltages In Applications. Vol. lA–B, #3, May/June 1972.
Low–Voltage ac Power Circuits, Institute of 7. Bob Botos and Bob Haver, A Fuse–Thyristor
Electrical and Electronic Engineers. Coordination Primer, ON Semiconductor
2. Francois D. Martzloff and Thomas F. Leedy, Application Note AN568, ON Semiconductor,
Selecting Varistor Clamping Voltage: Lower Is Not Phoenix, Arizona.
Better, Proceedings of the 1989 Zurich 8. F. B. Golden, Take the Guesswork out of Fuse
International EMC Symposium, pp. 137–142. Selection, The Electronic Engineer, July 1969. pp.
3. Bill Roehr, Hardening Power Supplies to Line 71–75.
Voltage Transients, PCIM, June, 1986. 9. A. F. Howe, P. G. Newberry, N.P.M Nurse, DC
4. Bill Roehr, An Effective Transient and Noise Fusing in Semiconductor Circuits, IEEE
Barrier for Switching Power Supplies, PCIM, Transactions on Industry Applications, Vol 1A–22,
Sept. 1986. No. 3, 1986.
5. Martin Smith, Some Considerations of
Coordinating Fuses and Semiconductors, Bussman
MFG. Co., Publication E–60–A–15.

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Rectifier Applications

Chapter 10

Basic Diode Functions in Power Electronics

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Rectifier Applications



 !

   

The buck and boost converters are generally regarded as allocated during the pulse repetition period. Duty cycles
the basic building blocks for power conversion [1]. By vary over a wide range in pulse–width–modulated (PWM)
combining these basic building blocks with some kind of circuits so that the time for diode turn off may be below 10%
transformation function, many new complex and all known of the pulse repetition period in some designs.
converters are derived. Forced commutation occurs in circuits where appreciable
The basic topologies of buck and boost converters are forward current is flowing when a change in circuit state
shown in Figures 150 and 151. In operation, the transistor forces the diode to turn off. Usually a high reverse current
switch, often referred to as the power switch, is alternately occurs during turn–off which must be handled by other
turned on or off. When the power switch is on, the amount circuit elements.
of energy stored in the inductor is determined. When the Basic circuit functions that commonly use forced
power switch is off, some or all of the stored energy flows commutation include:
to the load and the filter capacitor, CF. These four essential • Freewheeling
elements–power switch, diode, inductor or choke, and • Rectification, continuous mode
capacitor–play key roles in all power conversion circuits. In hard switching circuits, the closer the diode is to the
Despite its essential role, the diode has received far less ideal one with no stored charge, the better the circuit
attention in the literature than its more glamorous associate, performs. As will be shown later in a detailed analysis, the
the power switch. low–impedance state which the diode maintains during the
Buck and boost converters are designed to operate in one ta portion of reverse recovery time causes high stress on
of two modes. In “continuous mode” operation, the inductor other circuit elements which can be mitigated by using a fast
or choke current never becomes zero during the switching recovery diode.
cycle. In “discontinuous mode” operation, the choke current Circuits used in power electronics generally can be placed
decays to zero, often called “drying out,” before the power in one of two categories as far as the demands imposed upon
switch turns on again. The overall characteristics of the the diode are concerned. They are:
converter and the requirements placed upon the four In many circuits, the element that suffers the highest stress
essential elements differ greatly depending upon whether is a power transistor switch which normally is the most
operation is confined to the continuous or discontinuous highly stressed and failure–prone component in a power
mode. electronics system. Consequently, any means to reduce
• Naturally commutated or soft switching circuits stress on the power switch is helpful to overall system
• Forced commutated or hard switching circuits reliability and efficiency. Choosing a fast diode is one
In naturally commutated circuits, diode turn off is means, and using a transistor snubber is another. Snubber
primarily by internal recombination and no appreciable circuits, discussed in the next chapter, usually employ
reverse current flows. Basic circuit functions that are diodes which also need to be selected for proper operation.
normally naturally commutated include: This chapter examines the basic diode functions
• Rectification, discontinuous mode separately with the objective of identifying the requirements
of the diodes. Used in conjunction with additional active and
• Catching passive components, the basic functions are embedded in a
• Clipping number of widely used sub–circuits that play important roles
• Clamping in power electronic systems. Some practical concerns such
To maintain soft switching operation after forward current as power switch drive circuit problems, parasitic inductance
ceases, sufficient time for stored charge to recombine must caused by layout, and use of a diode snubber are discussed
elapse before the circuit requires the diode to be a high near the end of this chapter. The next chapter shows some
impedance. Diodes must be chosen so that their “time commonly used power electronic circuits to illustrate the
constant” (lifetime, *TS) is less than 20% of the time principles of diode selection developed in this chapter.

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Rectification, Discontinuous Mode would not function. Because of the flyback action of the
The discontinuous mode boost converter shown in choke voltage, the converter’s sometimes called a flyback
Figure 150 is a common example of rectification where the converter, but this term is more properly reserved for a
switching is soft. Waveforms are shown in Figure 152 for popular transformer–coupled converter that can be shown to
an idealized case where resistance in the circuit is zero. be a cascade connection of a buck and a boost converter. The
However, since resistance causes power loss and heating, boost circuit is also called a ringing choke or step–up
considerable effort is spent in power conversion circuits to converter.
The diode requirements are not stringent in this
minimize resistance and waveforms in practice are not
application. For low loss, the forward voltage drop and
significantly different from those shown.
dynamic impedance during turn–on should be low. The
When the power switch QS is turned on, current ramps up
diode only needs to block V0. The carrier lifetime *TS
in QS and the choke stores energy in its core. During this
should be no more than 20% of the charging time of the
time, shown from t0 to t1, the circuit voltages are fixed. The
capacitor for the boundary condition where the time from t3
transistor on–state level is nearly zero, the inductor has VI to t4 is zero. Otherwise its conduction would extend into the
impressed across it and the diode must block the output time when the switch turns on, resulting in reverse recovery
voltage. When the transistor turns off, the voltage across the losses.
transistor reverses and the “flys back” according to the When the input voltage is first applied, the transistor is off.
relationship, v = –L di/dt. When the voltage across the power An inrush current flows to charge the filter capacitor, limited
switch starts to exceed the output voltage V0,the diode only by the characteristics of the LC network and any series
conducts allowing the choke energy to flow into the load and resistance in the wiring and components. The current wave
the capacitor. is a one–half cycle of a damped sinusoid and its peak value
The output voltage is a complex function of the switch can be several times the steady state value that the
duty cycle, the load current, and the output filter capacitor components normally experience. Either the components
but it must exceed the input voltage. An attempt to have V0 must be sized to handle the inrush or means must be taken
< V1 would cause dc current to flow from V1 and the circuit to limit its magnitude.

iL
+ VD –

+ –
VL DR
iS
+
L
CO O
VI A VO
+
– D
VS
QS –

Figure 150. Output Section of a Boost Converter; the Diode Performs Rectification

VS iS iL
+ – A L

+ + L
QS O
VI VD CO VO
iD A
DF D
– –

Figure 151. Output Section of a Buck Converter; the Diode Performs a Catch Function

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Rectifier Applications

VO

VS VI

0
VO V

VD VI

0
IO
iL
II

0
VO VO

VL
(VO–VS)
IS
0

iS iP

iS

id IO

0
t1 t2 t3 TS
TS t

Figure 152. Idealized Waveforms for Boost Converter Operating in the Discontinuous Mode

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Rectifier Applications

Catching negative. It is prevented from dropping below the reference


The discontinuous mode buck converter is sometimes level by the diode. The waveform is sometimes said to be
used at low power levels. The diode performs a catch “caught.”
function rather than a rectification function. Waveforms are Without the catch diode, the voltage across the switch
shown in Figure 153, idealized to the extent that resistances could reach destructive levels. The transistor current now
in the components are neglected. flows through the diode which permits the choke to continue
When the power switch is turned on, current ramps up in supplying current to the load. Since the diode maintains
the inductor; charging the output capacitor and delivering current flow during pan of the cycle, it is often called a
current to the load. During transistor turn–off, which begins “freewheeling” diode. By maintaining current flow when
at time t1, the inductor causes the voltage at point A to go the transistor is off, circuit efficiency is improved.

VS
VI–VO

VI
VD

VO

iL
IO

VO VD–VO
VL

iS iS id

id
IS
0
t1
t2 t

TS TS

Figure 153. Idealized Waveforms for Buck Converter Operating in the Discontinuous Mode

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Rectifier Applications

Mitigating inductive kick is a common problem in power prevent the current in the inductor from changing quickly.
electronics. The push–pull circuit of Figure 154 supplies The current is commutated from an off–going switch to a
power to a resistive load via a transformer. The inductance diode and decays according to the relationship, ∆t = IL/V.
LP represents the sum of parasitic wiring inductance plus The diode forward recovery characteristic is of utmost
transformer leakage inductance. importance in this application since it determines how far
above the rail or below ground the inductive kick can drive
+ the voltage. Since the diode is on only briefly, other
V
characteristics are relatively unimportant except, of course,
Q1 Q3
the diode must block the voltage V+. As with other soft
D1 D3
switching circuits, when used at high frequencies the diode
LP lifetime should be less than a fifth of the time between
A B pulses. Otherwise, a reverse current will flow through the
diode, which must be handled by the power switch at
Q2 Q4
turn–on.
D2 D4
RL
Clipping
In clipping, a portion of a wave is flattened off or limited to
some arbitrary level, irrespective of the amplitude of the
Figure 154. A Push–Pull Full Bridge Circuit Using original signal. Peak clippers find use in power electronics
Catch Diodes to protect semiconductors from overvoltage.
A peak clipper, also called a peak limiter, prevents the
Assuming very fast switching, when Q2 and Q3 turn on at positive (or negative) amplitude of the wave from
time t1, V+ appears at point B and point A is pulled to ground. significantly exceeding a value set by the clipper. A simple
Current builds up at a rate determined by the circuit time example of such a clipper is illustrated in Figure 155. When
constant. When the signal to turn off the transistors is the instantaneous value of the input voltage wave lies
received, they will not turn off at the same time because of between VA and VB, neither of the diodes conduct, and the
their storage delay time. Suppose Q2 turns off first. It will input wave is transmitted directly to the output terminals
need to block V+ plus the inductive kick generated by LP, if without change. On the other hand, when the input voltage
the catch diodes are not in the circuit. A similar situation is more positive than VA, diode DA will conduct and thus
occurs when transistors Q1 and Q2 are switched. prevent the output voltage from rising appreciably above
The inductive kick is given by Faraday’s law as VA. Similarly, when the input Voltage becomes more
VL = –LP di/dt. It is instructive to calculate the inductive kick negative than VB, diode DB will conduct and clip the
for the typical values in a high–frequency power electronic negative peaks of the output voltage at a level approximately
circuit. Assume that V+ = 400 V. RL = 20 Ω (current = 20 Α) equal to VB. In circuits of this nature, the output is often said
and LP = 0.2 µH. If the switch opens in 20 ns, to be “clamped” to VA or VB. However, a clamping circuit
does not change the waveshape or limit its amplitude, as
VL + * (0.2)(10 *6)(20)ń(0.02)(110 *6) + *200 V described in the next section. For the diode clippers to be
Raising the transistor switch blocking voltage effective, the series resistance RS must be considerably
requirement imposes penalties in terms of cost and greater than the forward resistance RF of the diodes, since RS
performance. Consequently, it is common practice to use and RF form a voltage divider. In addition, the turn–on
catch diodes to confine the voltage across the switches to impedance should be low to minimize overshoot and the
values between the rail voltage and ground. The diodes also diode lifetime fast enough to follow the input waveform.

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Rectifier Applications

If the batteries in Figure 155(a) are replaced by large usually varies over a wide range in a power converter. In
capacitors, the circuit functions as a dynamic clipper when order to properly drive a power stage when the drive
driven by a repetitive ac wave. The left capacitor is charged waveform is coupled through a transformer, the positive and
to the positive peak of the ac wave and the right capacitor is negative peaks must remain at fixed levels. To regain the
charged to the negative peak. Should a transient exist on the original waveform it becomes necessary to reinsert a dc
wave in excess of the normal peak value of the wave, it will component of appropriate amplitude. This process is termed
be clipped. The action is essentially the same as when dc restoration. It is a special example of a more general
voltage sources are used, except the sources adjust to the process known as clamping, in which a reference level is
peak of the ac wave. To permit the voltage level to drop in introduced that has some desired relationship to the wave.
response to a change in the amplitude of the wave, a bleeder The simplest form of a clamping circuit consists of a diode
resistor across each capacitor is needed. The RC time associated with a resistance–capacitance network, as
constant is usually chosen to be about five times the period illustrated in Figure 156. The resistance R in these circuits
of the input wave. is relatively large, and the time constant RC is considerably
greater than the time of one cycle of the applied wave. If
RS circuits are used that insert a dc component of such
amplitude and polarity that the negative peaks of the original
D1 D2
wave are at zero level, as shown in Figure 156(a), then it is
said that the negative peaks of this wave are clamped to zero.
V1 V2
VA VB
The same wave with its positive peaks clamped to zero volts
and to +V volts is shown in parts (b) and (c), respectively.
The detailed action of the diode clamp of Figure 156(b)
can be understood by considering Figure 157. If RC is so
(a)
large that it can be considered infinite, then the diode charges
capacitance C to a voltage V that just barely prevents the
V1 output voltage V0 from going positive; thus, V is the
VA reinserted dc voltage. However, if RC is high but not infinite,
0 then some of the charge on the capacitor leaks off during the
VB t
time interval t3 – t2. This causes the output wave to decay
with a time constant RC during the time interval t3 – t2;
however, if RC is very much greater than the time t3 – t2, the
V2 change ∆V0 in the amplitude of the output voltage will be
VA small. At t3 the voltage at the output terminals increases
0
VB t suddenly in amplitude by the peak–to–peak amplitude V of
the applied wave and makes the output voltage go ∆V0 volts
positive at time t3. This causes current to flow into the
capacitor to replace the charge that leaked off during the
D 1 Conducts D 2 Conducts
previous period, as shown. The time constant associated
with this current flow corresponds to C being charged
(b)
through the diode and source resistance.
Figure 155. Diode Clipping Circuit and Waveforms In common with the diode requirements of other soft
when Peak Clipping a Sine Wave: commutated circuits, diode forward recovery should be fast
(a) Circuit; (b) Waveforms and the lifetime fast enough to not have any stored charge
left in the diode when the next cycle of the input wave
Clamping occurs. The proper value for the time constant RC is a
Many asymmetrical waveforms possess a dc reference compromise between two conflicting requirements. The
component which remains fixed–it is not a function of the larger this time constant, the smaller will be the variation
waveform. When such a waveform is passed through a ∆V0 of the clamping voltage during the cycle, and, hence,
transformer or a capacitor, the dc component is not the smaller will be the positive spike at t1 and t3. On the other
transmitted. Loss of the dc reference is often a problem hand, the larger the RC product, the more slowly is the
because the absolute value of the positive and negative clamping voltage able to adjust itself to reductions in duty
portion of the wave is dependent upon the duty cycle which cycle or amplitude of the wave that is to be clamped.

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Rectifier Applications
C

R 0

(a)

V′
C

V
R 0

V′

(b)

R + 0
V

(c)

Figure 156. Clamping Circuits and Waveforms; (a) Negative Peaks Clamped to Zero;
(b) Positive Peaks Clamped to Zero; (c) Positive Peaks Clamped to V

V′

V VO

(a) (b)

n VO
t1
t2 t3

n VO
(d) Current Through Diode Corresponding to (c)
Decay with Time Constant RC
(c) (d)

Figure 157. Detailed Waveforms for the Clamping Circuit of Figure 156(b):
(a) Applied Wave; (b) Output Wave–RC Infinite; (c) Output Wave–Moderate RC;
(d) Current through Diode Corresponding to (c)

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Rectifier Applications

Freewheeling Waveforms for the buck converter operating in the


An important use of diodes is to keep current flowing in continuous mode are shown in Figure 158 They are drawn
an inductor when the source of energy is pulsed off. When to the same scale as those shown in Figure 153, which apply
used in this manner, the diode is called a freewheeling diode. to the discontinuous mode. It is quite apparent that
Action is similar to the catch diode used in the discontinuous continuous mode operation places much less peak current
mode buck converter, but the diode is carrying forward demand upon the switch, diode, and inductor. Although not
current when the power switch turns on. A common shown, the ripple current through the filter capacitor is also
application is the buck converter of Figure 151 operating in much less. Consequently, the current capabilities of the key
the continuous mode. In this case, inductor LF is chosen power components can be downsized from those required by
large enough so that its current never goes to zero. the discontinuous mode.

VS VS

VS
VD

VO

iL IO

VS–VO
VL VO

iS
IS
0

id

t0 t2
t1
TS TS

Figure 158. Idealized Waveforms for a Buck Converter Operating in the Continuous Mode

There are two disadvantages of continuous mode Waveforms for the boost converter operating in the
operation. The inductance of the choke must be much larger continuous conduction mode are shown in Figure 159.
and the diode must experience forced commutation when Continuous mode operation offers the same reduction of
the power switch turns on. The resulting reverse recovery peak currents in the components of the boost converter as
current adds a current spike to the turn–on waveform which occurs in the buck converter and it introduces the same
reduces circuit efficiency. problem, forced commutation. Accordingly, low stored
charge is a desirable diode attribute.

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Rectifier Applications

VO
VS VI

0
VO
VD VI

iL II

VI
VL (V–VS)

iS

id
IO

t1 t2 t

Figure 159. Idealized Waveforms for a Buck Converter Operating in the Continuous Mode

The rectifier diode (DR) has a dual role. It is a rectifier Rectification, Continuous Mode
since it passes intermittent pulses of current to the filter In the basic buck and boost converters, both the power
capacitor, C0. It also is a freewheeling diode since it switch and the diode participate in producing a dc output
maintains the flow of choke current when the transistor from a dc input. A rectifier function as classically viewed–
switch is off. that is, changing an ac wave to a unidirectional wave–does
To provide high efficiency, the diode DF must meet
not exist. However, when a transformer is present, the diode
stringent requirements. Since it supports the full load current
that functions as a rectifier becomes obvious.
possibly up to 90% of the time, it should have a low forward
Countless numbers of converters [2] can be derived by
drop. When the switch turns off, a low dynamic VF is
required for low loss and to minimize the switch voltage combining buck and/or boost topologies with transformers
stress. (At this instant the freewheeling diode also acts as a and chokes. One of the more popular topologies is the
catch diode; therefore, the terms “freewheeling” and “catch” forward converter shown in Figure 160. It normally operates
are often used interchangeably.) When the switch turns on, in the continuous mode. A more detailed analysis of the
both the switch and the diode are subjected to a high current, forward converter is given in the next chapter; at this point
limited only by the circuit parasitic inductance and diode the rectification function is the focus of the discussion.
reverse recovery time. Consequently, low diode stored When the power switch is on, the dotted end of the secondary
charge is a very important asset, not only for high diode wiring is positive; the rectifier diode DR conducts,
efficiency, but also for high switch efficiency and low stress. permitting current to be transmitted from the input source to

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Rectifier Applications

the choke and the load. When the power switch is off, the the freewheeling diode to the rectifier diode. Both changes
transformer polarities reverse and output current is of state occur under forced commutation conditions and
commutated to the freewheeling diode while DR blocks. therefore efficiency is improved as the diode stored charge
When the switch turns on again, current is commutated from approaches the ideal of zero.

DR L

VI DO NP NS DF CO VO

NO

Figure 160. Output Section of a Forward Converter

Forced Commutation Analysis charge, an in–depth analysis of the switching process


The previous material has pointed out several power follows. The analysis reveals numerous advantages of using
supply circuits where a power transistor must clear diode diodes having a low stored charge–which is synonymous
stored charge while turning on. The equivalent circuit of with fast reverse recovery–in forced commutation circuits.
Figure 161. is useful for analyzing the commutating interval The current remains constant as current is switched
for any of these hard switching circuits. The essential between the transistor and diode. At any instant of time, the
common features are that during the switching interval the sum of transistor current and diode current equals the
transistor must conduct the current formerly flowing in the inductor current, modeled as a current source. The pertinent
diode, and the voltage across the transistor must drop from waveforms are shown in Figure 162. The solid lines apply
a relatively high off–state level to an on–state level that for a practical diode, while the dotted lines show behavior
approaches zero. To show the major impact of diode stored for an ideal diode having no switching losses.

IO VD
iD
(+)
VI
iS

VS

Figure 161. Equivalent Circuit Used for Analyzing Losses in Forced Commutated Circuits

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Rectifier Applications
VI

VS
IO
(a) iS
V(on)
0
tri

(b)
PS

iO
(c)
iD
VF
0

VD IRM(REC)

–VI
tb
ta
(d)

PD
0

t0 t1 t2 t′2 t3 t

Figure 162. Forced Commutation Waveforms: (a) Power Switch Voltage and Current;
(b) Power Switch Dissipation; (c) Diode Voltage and Current; (d) Diode Dissipation.
Diode Forward Drop and Switch On–State Levels Are Exaggerated

At the start of the cycle at time t0, the diode is conducting value. Also, the transistor voltage drops to its saturation
and the transistor is off. As the transistor turns on at t1, level while the diode voltage rises to the supply voltage.
current is diverted from the diode. However, the diode is still The power dissipation waveforms for both the transistor
a low impedance and therefore the transistor must withstand and diode are also shown in Figure 162. The shaded area on
the full input voltage as its current builds up. At t2, all the the transistor waveform indicates the dissipation caused by
inductor current is assumed by the transistor. If the diode the diode stored charge and capacitance. Note that the
were ideal, it would turn off and the commutation would be dissipation during ta is almost as much as the dissipation
complete. The dashed lines indicate what the waveforms during the switching of inductor current to the transistor in
would be if the diode were ideal, that is, if it did not have the time interval t1 to t2. This situation is not uncommon
stored charge or junction capacitance. With a real diode, the when the diode reverse recovery time is approximately
low–impedance state is maintained during the ta interval of equal to the transistor rise time. Reverse recovery current
diode reverse recovery. Thus, the transistor current raises transistor dissipation appreciably because it occurs
overshoots because of the reverse recovery current. During when the transistor is sustaining its full off–state voltage.
the diode ta time, shown on Figure 162. as the interval from
t2 to t2, the transistor is subjected to high stress. During the
diode tb time, shown on Figure 162. as time interval t2 to t3,
both the transistor and the diode are subjected to high stress.
During the diode tb interval, diode current decays to zero and
the transistor current mirrors it, dropping to its on–state

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Rectifier Applications

By approximating the voltage and current change with with a real diode during the current commutation interval.
straight lines, the transistor dissipation during turn–on can Because of the squared term, the ratio increases very rapidly
be found from the waveforms using geometry. It is given by: with increasing IRM(REC). Figure 163. illustrates the heavy

ǓǒTtriSǓ ) VIǒIO ) IRM(REC) ǓǒTtaSǓ


penalty that IRM(REC) imposes upon the power transistor.
2
ǒ
PT + VIIO
2
When IRM(REC) = IO, PI is four times that occurring with an
ideal diode.
) ǒVIIOǓǒ trv Ǔ ) ǒ I RM(REC)Ǔǒ tb Ǔ
VI It is important to recognize that Equation 10.3 is valid for
2 TS 4 TS (10.1) all types of diodes. It does not matter whether the source of
The first term is the dissipation in the transistor during IRM(REC) is stored charge in a junction diode or capacitance
current rise time if the diode were ideal. The second term has in a Schottky diode; high IRM(REC) causes a severe increase
two parts: the first part is caused by the lengthening of in the transistor dissipation during turn–on.
transistor turn–on by the diode ta interval and the second part Equation 10.3 can be stated in terms of tri to show the
accounts for the overshoot current caused by ta. The third effect of changing the transistor current rise time. From
term is the dissipation during transistor voltage fall time if Figure 162. the recovered charge (Qa) during time interval
the diode were ideal. The last term is dissipation produced ta is found by geometry to be:
during the tb portion of diode recovery. It assumes that tb = Qa + ta IRM(REC)ń2
trv, which is not necessarily true; however, it is often true that
the tb contribution to transistor dissipation is comparably 10
small.
Nearly all the diode dissipation occurs during time tb. It is 8
difficult to quantify since the voltage during the tb interval
is also affected by the transistor and circuit inductance.
Additionally, the tb interval is a function of the diode PR/PI 6
capacitance which produces reactive power not
contributing to its power dissipation. For a slow diode, 4
where tb is much longer than trv, the diode dissipation may
be approximated by assuming that the full reverse voltage is
2
across the diode during tb. In this case the transistor
dissipation during tb is zero, and the diode dissipation is:

ǒ Ǔǒ* tTbSǓ
0
I
PD + VI RM(REC) 0.0 0.5 1.0 1.5 2.0
2 (10.2) IRM/IO

Regardless of how power is shared during the tb interval, Figure 163. Increase in Switch Dissipation during
Equation 10.2 is an accurate expression for the sum of the Current Commutation Caused by
transistor and diode dissipation. When the diode is fast, tb Diode Recovery Current
will be much less than trv and dissipation in the diode will be
very small since the voltage a