HiPerFETTM Power IXFK24N100 VDSS = 1000V

MOSFETs IXFX24N100 ID25 = 24A

RDS(on)
390m
trr 250ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrisic Diode

TO-264 (IXFK)
Symbol Test Conditions Maximum Ratings
VDSS TJ = 25C to 150C 1000 V
VDGR TJ = 25C to 150C, RGS = 1M 1000 V
VGSS Continuous 20 V G
D (TAB)
VGSM Transient 30 V S

ID25 TC = 25C 24 A
IDM TC = 25C, pulse width limited by TJM 96 A PLUS247 (IXFX)

IA TC = 25C 24 A
EAS TC = 25C 3 J

dV/dt IS IDM, VDD VDSS, TJ 150C 5 V/ns (TAB)

PD TC = 25C 560 W
TJ -55 ... +150 C
G = Gate D = Drain
TJM 150 C
S = Source TAB = Drain
Tstg -55 ... +150 C
TL 1.6mm (0.062 in.) from case for 10s 300 C
TSOLD Plastic body for 10s 260 C Features
Md Mounting force (PLUS247) 20..120/4.5..27 N/lb.
Mounting torque (TO-264) 1.13/10 Nm/lb.in. International standard packages
Low RDS (on) HDMOSTM process
Weight PLUS247 6 g Rugged polysilicon gate cell structure
TO-264 10 g Avalanche rated
Low package inductance
Fast intrinsic rectifier

Applications

DC-DC converters
Symbol Test Conditions Characteristic Values Battery chargers
(TJ = 25C, unless otherwise specified) Min. Typ. Max. Switched-mode and resonant-mode
power supplies
BVDSS VGS = 0V, ID = 3mA 1000 V DC choppers
AC motor drives
VGS(th) VDS = VGS, ID = 8mA 3.0 5.5 V
Temperature and lighting controls
IGSS VGS = 20V, VDS = 0V 200 nA
Advantages
IDSS VDS = VDSS 100 A
VGS = 0V TJ = 125C 2 mA PLUS 247TM package for clip or spring
mounting
RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 390 m
Space savings
High power density

2008 IXYS CORPORATION, All rights reserved DS98598D(10/08)

 IXFK24N100
IXFX24N100
Symbol Test Conditions Characteristic Values
TO-264 (IXFK) Outline
(TJ = 25C, unless otherwise specified) Min. Typ. Max.
gfs VDS = 10V, ID = 0.5 ID25, Note 1 15 27 S
Ciss 8700 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 785 pF
Crss 315 pF
td(on) 35 ns
Resistive Switching Times
tr 35 ns
VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25
td(off) 75 ns
RG = 1 (External)
tf 21 ns
Qg(on) 267 nC
Qgs VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25 52 nC
Qgd 142 nC
RthJC 0.22 C/W
RthCS 0.15 C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25C, unless otherwise specified) Min. Typ. Max.
IS VGS = 0V 24 A
ISM Repetitive, pulse width limited by TJM 96 A
PLUS 247TM (IXFX) Outline
VSD IF = 24A, VGS = 0V, Note 1 1.5 V
trr IF = 24A, -di/dt = 100A/s 250 ns
QRM 1.0 C
VR = 100V, VGS = 0V
IRM 8 .0 A

Note 1: Pulse test, t 300s; duty cycle, d 2%.

Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A1 2.29 2.54 .090 .100
A2 1.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b1 1.91 2.13 .075 .084
b2 2.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
 IXFK24N100
IXFX24N100
Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics
@ 25C @ 25C
24 55
VGS = 10V VGS = 10V
7V 50
20 45

40 7V
16
ID - Amperes

ID - Amperes
35

6V 30
12
25

20 6V
8
15

4 10
5V 5 5V
0 0
0 1 2 3 4 5 6 7 8 9 0 3 6 9 12 15 18 21 24 27 30
VDS - Volts VDS - Volts

Fig. 3. Output Characteristics Fig. 4. RDS(on) Normalized to ID = 12A Value

@ 125C vs. Junction Temperature
24 2.8
VGS = 10V
2.6 VGS = 10V
20 2.4

6V 2.2
RDS(on) - Normalized

16 2.0
ID - Amperes

I D = 24A
1.8
I D = 12A
12 1.6
1.4
8 1.2
1.0
4 5V 0.8
0.6
0 0.4
0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125 150
VDS - Volts TJ - Degrees Centigrade

Fig. 5. RDS(on) Normalized to ID = 12A Value Fig. 6. Maximum Drain Current vs.
vs. Drain Current Case Temperature
2.6 28

2.4 VGS = 10V

24
TJ = 125C
2.2
RDS(on) - Normalized

20
2.0
ID - Amperes

1.8 16

1.6 12

1.4
8
1.2
TJ = 25C 4
1.0

0.8 0
0 5 10 15 20 25 30 35 40 45 50 55 -50 -25 0 25 50 75 100 125 150
ID - Amperes TC - Degrees Centigrade

2008 IXYS CORPORATION, All rights reserved

 IXFK24N100
IXFX24N100

Fig. 7. Input Admittance Fig. 8. Transconductance

45 60
TJ = - 40C
40
50
35
TJ = 125C 25C

g f s - Siemens
30 40
ID - Amperes

25C
- 40C
25 125C
30
20

15 20

10
10
5

0 0
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 5 10 15 20 25 30 35 40 45 50
VGS - Volts ID - Amperes

Fig. 9. Forward Voltage Drop of

Intrinsic Diode Fig. 10. Gate Charge
70 10
VDS = 500V
9
60 I D = 12A
8 I G = 10mA
50 7
IS - Amperes

VGS - Volts

6
40
TJ = 125C 5
30
4
TJ = 25C 3
20
2
10
1

0 0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 30 60 90 120 150 180 210 240 270
VSD - Volts QG - NanoCoulombs

Fig. 12. Maximum Transient Thermal

Fig. 11. Capacitance
Impedance
100,000 1.000
f = 1MHz
Capacitance - PicoFarads

Ciss
10,000
Z(th)JC - C / W

0.100

Coss
1,000

Crss

100 0.010
0 5 10 15 20 25 30 35 40 0.001 0.01 0.1 1 10
VDS - Volts Pulse Width - Seconds

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS REF: F_24N100(9X)10-17-08-C