Hahnbee Lee
Thermoelectrics
For the majority of the past two weeks I have conducted research regarding the physics
effects: the Seebeck effect and the Peltier effect. A Peltier tile is made up of two main
semiconductor, such as silicon or germanium elements, with atomic impurities is either a p-type
or a n-type semiconductor and the type of atomic impurity present determines the type of the
semiconductor.
In a pure Si or Ge semiconductor, each nucleus uses its four valence electrons to form four
covalent bonds with its neighbors (Figure 1). Each ionic core has a net charge of +4 and is
surrounded by 4 valence electrons. Since there are no excess electrons or holes, the number of
electrons and holes present at any given time will always be equal.
Now, if one of the atoms in the semiconductor lattice is replaced by an element with three valence
electrons, such as a Group 3 element like Boron (B), Arsenic, or Gallium (Ga), the electron-hole
balance will be changed. This impurity will only be able to contribute three valence electrons to
the lattice, therefore leaving one excess hole (Figure 2). Since holes will "accept" free electrons, a
Because an acceptor donates excess holes, which are considered to be positively charged, a
semiconductor that has been doped with an acceptor is called a p-type semiconductor; "p" stands
for positive. Notice that the material as a whole remains electrically neutral. In a p-type
semiconductor, current is largely carried by the holes, which outnumber the free electrons. In this
case, the holes are the majority carriers, while the electrons are the minority carriers.
The same thought process applies to the N-type semiconductor except the intrinsic lattice
is doped with an element from Group 5 (arsenic or phosphorus), the addition of an atom with five
valence electrons causes an excess of electrons in the lattice and this element is called a donor
of the material due to the movement of the holes and electrons respectively. If heat is applied to
an n-type semiconductor the electrons move to the opposite end of the material and if heat is
applied to a p-type semiconductor the holes move which causes a northern positive end and
southern negative end for the n-type semiconductor and a northern negative end and a southern
positive end for the p-type semiconductor. Thus if p-type and n-type semiconductors are connected
in parallel to each other an electron current will be formed across the array of varying type
Thus, we can conclude that a p-type and n-type semiconductor connected in series with
an applied temperature gradient will create a current - this concept is called the Seebeck effect.
The opposite when electrons are allowed to flow through a p-type and n-type semiconductor in
Plan
Although it is optimal to use a semi-conductor because it has freely moving electrons and
holes and simultaneously has insulating properties which will aid in creating a heat gradient, a
originally test different materials and how a thermoelectric cell works I will start off by
connecting aluminum, copper, etc. (normal wire material) to a p-type semiconductor to see
which combination creates the largest voltage difference. I will also purchase a pre-made peltier
More research will need to be done on the different characteristics of different metals
such as what makes a good fit or has optimal characteristics for a thermoelectric cell. And then
after more of that research is conducted I will need to look into the feasibility and advantages of
using Vanadium dioxide in comparison to any other metal and how feasible it would be to buy
If I find out that this is not feasible then I will take the route of creating an application
system of thermoelectrics to apply to a car. I will just purchase peltier tiles and create a
commercialized product that can be applied to cars that will save electricity.
THERMOELECTRICS 6
References
Casten, S. (2009, September 12). How much energy does the U.S. waste? Retrieved October 17,
Garnero, E.J., Mcnamara, A.K., & Shim. S. (2016). Continent-sized anomalous zones with low
seismic velocity at the base of Earths mantle. Nature Geoscience, 9(7), 481-489.
Doi:10.1038/ngeo2733
Iafolla, V., Nozzoli, S., & Fiorenza, E. (2003). One axis gravity gradiometer for the
doi:10.1016/j.physleta.2003.07.014
L. (2013, December 17). I. P-Type, N-Type Semiconductors. Retrieved November 09, 2017,
from https://photon.libretexts.org/The_Science_of_Solar/Solar_Basics/D._P-
N_Junction_Diodes/I._P-Type%2C_N-Type_Semiconductors
Liu, H., & Pike, W. T. (2016). A micromachined angular-acceleration sensor for geophysical
Yang, S. (2017, January 26). For This Metal, Electricity Flows, But Not the Heat | Berkeley Lab.
heat-flows-in-vanadium-dioxide/