FCH47N60 / FCA47N60 600V N-Channel MOSFET

SuperFET TM

FCH47N60 / FCA47N60
600V N-Channel MOSFET
Features Description
650V @TJ = 150C SuperFETTM is, Farichilds proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
Typ. RDS(on) = 0.058
balance mechanism for outstanding low on-resistance and
Ultra Low Gate Charge (typ. Qg = 210nC) lower gate charge performance.
Low Effective Output Capacitance (typ. Cosseff. = 420pF) This advanced technology has been tailored to minimize con-
duction loss, provide superior switching performance, and with-
100% avalanche tested
stand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system min-
iaturization and higher efficiency.

D
!

"

! "
"
G! "

TO-247 TO-3P !
G D
S G DS S

Absolute Maximum Ratings

Symbol Parameter FCH47N60 FCA47N60 Unit
VDSS Drain-Source Voltage 600 V
ID Drain Current - Continuous (TC = 25C) 47 A
- Continuous (TC = 100C) 29.7 A
IDM Drain Current - Pulsed (Note 1)
141 A

VGSS Gate-Source voltage 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 1800 mJ
IAR Avalanche Current (Note 1) 47 A
EAR Repetitive Avalanche Energy (Note 1) 41.7 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25C) 417 W
- Derate above 25C 3.33 W/C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 C
TL Maximum Lead Temperature for Soldering Purpose,
300 C
1/8 from Case for 5 Seconds

Thermal Characteristics
Symbol Parameter Typ. Max. Unit
RJC Thermal Resistance, Junction-to-Case -- 0.3 C/W
RCS Thermal Resistance, Case-to-Sink 0.24 -- C/W

2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FCH47N60 / FCA47N60 Rev. A
 FCH47N60 / FCA47N60 600V N-Channel MOSFET
Symbol Parameter Typ. Max. Unit
RJA Thermal Resistance, Junction-to-Ambient -- 41.7 C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity
FCH47N60 FCH47N60 TO-247 - - 30
FCA47N60 FCA47N60 TO-3P - - 30

Electrical Characteristics TC = 25C unless otherwise noted

Symbol Parameter Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A, TJ = 25C 600 -- -- V
VGS = 0V, ID = 250A, TJ = 150C -- 650 -- V
BVDSS Breakdown Voltage Temperature
ID = 250A, Referenced to 25C -- 0.6 -- V/C
/ TJ Coefficient
BVDS Drain-Source Avalanche Breakdown VGS = 0V, ID = 47A
-- 700 -- V
Voltage
IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V -- -- 1 A
VDS = 480V, TC = 125C -- -- 10 A
IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 3.0 -- 5.0 V
RDS(on) Static Drain-Source
VGS = 10V, ID = 23.5A -- 0.058 0.07
On-Resistance
gFS Forward Transconductance VDS = 40V, ID = 23.5A (Note 4) -- 40 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25V, VGS = 0V, -- 5900 8000 pF
f = 1.0MHz
Coss Output Capacitance -- 3200 4200 pF
Crss Reverse Transfer Capacitance -- 250 -- pF
Coss Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 160 -- pF
Coss eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 420 -- pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 300V, ID = 47A -- 185 430 ns
RG = 25
tr Turn-On Rise Time -- 210 450 ns
td(off) Turn-Off Delay Time -- 520 1100 ns
(Note 4, 5)
tf Turn-Off Fall Time -- 75 160 ns
Qg Total Gate Charge VDS = 480V, ID = 47A -- 210 270 nC
Qgs Gate-Source Charge VGS = 10V -- 38 -- nC
Qgd Gate-Drain Charge (Note 4, 5) -- 110 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current -- -- 47 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 141 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 47A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0V, IS = 47A -- 590 -- ns
dIF/dt =100A/s (Note 4)
C
Qrr Reverse Recovery Charge -- 25 --
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 18A, VDD = 50V, RG = 25, Starting TJ = 25C

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FCH47N60 / FCA47N60 Rev. A
 FCH47N60 / FCA47N60 600V N-Channel MOSFET
Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

VGS
Top : 15.0 V
2 10.0 V
10
8.0 V 2
7.0 V 10

ID , Drain Current [A]

6.5 V
ID, Drain Current [A]

6.0 V
Bottom : 5.5 V
150C

1
10
1
10 25C
-55C

* Notes :
- Note
1. 250 Pulse Test
0 1. VDS = 40V
10 2. TC = 25C
10
0
2. 250s Pulse Test

-1 0 1
10 10 10 2 4 6 8 10

VDS, Drain-Source Voltage [V] VGS , Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
0.20
RDS(ON) [],Drain-Source On-Resistance

IDR , Reverse Drain Current [A]

2
0.15 10

VGS = 10V

0.10
1
10
VGS = 20V
150C 25C
0.05
* Notes :
1. VGS = 0V
0
* Note : TJ = 25C 10 2. 250s Pulse Test

0.00
0 20 40 60 80 100 120 140 160 180 200 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
ID, Drain Current [A] VSD , Source-Drain Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

30000 12
Ciss = Cgs + Cgd (Cds = shorted)
VDS = 100V
Coss = Cds + Cgd
25000 Crss = Cgd 10 VDS = 250V
VGS, Gate-Source Voltage [V]

VDS = 400V
20000 8
Capacitance [pF]

Coss

15000 6
* Notes :
1. VGS = 0 V
Ciss
2. f = 1 MHz
10000 4

5000 Crss 2
* Note : ID = 47A

0 0
-1 0 1
10 10 10 0 50 100 150 200 250

VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

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FCH47N60 / FCA47N60 Rev. A
 FCH47N60 / FCA47N60 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature
1.2 3.0
Drain-Source Breakdown Voltage

Drain-Source On-Resistance
2.5

RDS(ON), (Normalized)
BVDSS, (Normalized)

1.1
2.0

1.0 1.5

1.0
* Notes :
0.9 1. VGS = 0 V
* Notes :
2. ID = 250A 1. VGS = 10 V
0.5
2. ID = 47 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
TJ, Junction Temperature [C] TJ, Junction Temperature [C]

Figure 9. Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature
50
Operation in This Area
is Limited by R DS(on)
2
10
100 s 40
1 ms
ID, Drain Current [A]

ID, Drain Current [A]

1
10 10 ms
30
DC

0
10
20

* Notes :
-1
1. TC = 25C
10
2. TJ = 150C 10
3. Single Pulse

-2
10 0
0 1 2 3
10 10 10 10 25 50 75 100 125 150

VDS, Drain-Source Voltage [V] TC, Case Temperature [C]

Figure 10. Transient Thermal Response Curve

D = 0 .5
(t), Thermal Response

-1
10 * N o te s :
0 .2 1 . Z J C ( t) = 0 .3 C /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z J C ( t)
0 .1

0 .0 5 PDM

0 .0 2 t1
JC

t2
Z

-2
10
0 .0 1
s in g le p u ls e

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]

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FCH47N60 / FCA47N60 Rev. A
 FCH47N60 / FCA47N60 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform

VGS
Same Type
50K
as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

RL VDS
VDS 90%

VGS VDD
RG

10%
VGS
10V DUT
td(on) tr td(off)
tf
t on t off

Unclamped Inductive Switching Test Circuit & Waveforms

L BVDSS
1
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
BVDSS
ID
IAS
RG
VDD ID (t)

10V DUT VDD VDS (t)

tp
tp Time

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FCH47N60 / FCA47N60 Rev. A
 FCH47N60 / FCA47N60 600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS dv/dt controlled by RG

ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

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FCH47N60 / FCA47N60 Rev. A
 FCH47N60 / FCA47N60 600V N-Channel MOSFET
Mechanical Dimensions

TO-247AD (FKS PKG CODE 001)

Dimensions in Millimeters

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FCH47N60 / FCA47N60 Rev. A
 FCH47N60 / FCA47N60 600V N-Channel MOSFET
Mechanical Dimensions (Continued)

TO-3P
15.60 0.20
4.80 0.20
13.60 0.20

3.80 0.20
3.20 0.10 +0.15
9.60 0.20 1.50 0.05

18.70 0.20
12.76 0.20

19.90 0.20

23.40 0.20
13.90 0.20

2.00 0.20
3.50 0.20

3.00 0.20
16.50 0.30

1.00 0.20 1.40 0.20

+0.15
0.60 0.05
5.45TYP 5.45TYP
[5.45 0.30] [5.45 0.30]

Dimensions in Millimeters

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FCH47N60 / FCA47N60 Rev. A
 FCH47N60 / FCA47N60 600V N-Channel MOSFET
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in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I16

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FCH47N60 / FCA47N60 Rev. A