Advanced Research in Electrical and Electronic Engineering

p-ISSN: 2349-5804; e-ISSN: 2349-5812 Volume 4, Issue 4, July-September, 2017, pp. 162-164
Krishi Sanskriti Publications
http://www.krishisanskriti.org/Publication.html

Investigation of Image Acquisition for

Artificial Retinal Implants
Alaaddin Al-shidaifat1, Ashish Kumar2, Sandeep Kumar3, Won-ju Song4,
Chamindra Jayawickrama5 and Hanjung Song6
1,2,3,4,5,6
Dept. of Nanoscience and Engineering, Inje University Gimhae, Republic of Korea
E-mail: 1alaaddinsh@hotmail.com, 2ashish08engg@gmail.com, 3fedrer.engg@gmail.com,
4
dnjswn08@naver.com, 5chaminjayaw@gmail.com, 6hjsong@inje.ac.kr

AbstractIn this study, novel image acquisition for Artificial Since millions of peoples have been affected in a
Retinal Implants has been investigated by a silicon-integrated-circuit. worldwide as partially or whole for blindness by retinal
The proposed circuit designed using 0.18 um CMOS process and depressive diseases such as retinitis pigmentosa and age
consists of image acquisition circuit, photodiode for the light input, a related macular degeneration. The sequence of accurately
capacitor for summing of input current signals, an amplifier with a
feedback stage which makes neuron pulse and a photo sensor. The
layers represented human retina in well manner and which
SPICE (simulation program with integrated circuit emphasis) results includes photoreceptors (rods and cones), horizontal, bipolar,
and the measurement of the circuit in a condition of 3.3 V power amacrine and ganglions cells which is illustrated as Fig1.
supply demonstrate that the neuron outputs pulses with a small
In this paper, a new image acquisition circuit for Artificial
amplitude is around 140 mV.
Retinal Implants is proposed. The proposed circuit achieves
Introduction neuron outputs pulses with a small amplitude is around 140
mV. The organization of paper is follows as: section II
The first time-independent neuron model was proposed by describes design and its consideration in detail while results
McCulloch and Pitts in 1943. McCulloch and Pitts tried to and discussion is given in section III. Finally, conclusion is
understand how the brain could produce highly complex followed in section IV.
patterns by using many basic cells that are connected together.
These basic brain cells are called neurons. Hodgkin and
Huxley have contributed into a lot of researches; one of the
most important research for them was in 1952, in that work
they uncovered the electrical properties of neurons and
implemented it in electronic circuits [1]. Mead and Mahowald
demonstrated a new imaging paradigm that mimicked the
human retina with silicon integrated circuits in 1988. The
silicon retina has been produced by them is providing the first
glimpse of the great potential of CMOS integrated circuits
technology for imaging [2]. Recently, the research in
neuromorphic engineering specially for vision prosthesis such
as optic nerve implants and retinal implants, have increased,
with many researchers with goal of achieving recognition of
various objects [1-9].

Fig. 1: Biological retina neuron with Multi-layer structure.

Innvestigation off Image Acquuisition for Arttificial Retinall Implants 163

F 2: Proposeed full schemattic of neuron reetina with Indiividual circuit stages

Fig.

Design and con

nsideration Reesults and Disscussion
Thhis subsectionn commences with CMOS based neuronn retina Thhis section describes
d aboout uniform bright illumination
ciircuit which employs
e photoosensitive eleement as phottodiode. waaveform in terrms of outputt voltage for neuron
n retina circuit
Thhe proposed full
f schematicc of neuron reetina circuit iss shown wiith dynamic feeedback stagee. The informaation is presennted as
Fiig2. The schhematic conssists of current feedbackk event ouutput is in form
m of sequencee of spikes or pulses
p where analog
geenerator (Phottodiode and ammplifier stagee), current mirrror and daata encodes byy spike frequeency is being communicateed. The
dyynamic feedbback stage. T The transistorrs used in prroposed vooltage regulatiion waveformm according to t light intennsity is
scchematic has dimensions with
w its aspecct ratio are shhown in shoown in Fig3.
taable 1.
T
Table 1: Value of dimensions for proposed neuron
n retina circuit

Traansistors Aspect ratioss (W/L)

M1 1/0.18m
M2 0.3/0.18m
M3 0.5/0.18
m
M4 0.5/0.18
m
M5 0.3/0.18
m
M6 0.6/0.18
m
M7 10/0.18
m
M8 10/0.18
m
M9 10/0.18
m
M10 2/0.18m
M11 5/0.18m
M12 0.5/0.18
m
M13 0.3/0.18
m
M14 0.5/0.18
m
M15 0.3/0.18
m
M16 4/0.18m
M17 4/0.18m
M18 3/0.18m Fig. 3. Variatiion of voltage wwith respect to
o time accordin
ng to
light intensity.

Advancced Research in
i Electrical annd Electronic Engineering
p-ISS
SN: 2349-58044; e-ISSN: 23349-5812 Voluume 4, Issue 4,
4 July-Septemmber, 2017
16
64 Alaaddin Al--shidaifat, Ash
hish Kumar, Sandeep Kumaar, Won-ju Son
ng, Chamindraa Jayawickram
ma and Hanjun
ng Song

The layoutt of full neuroon retina circu

uit is made un
nder the Reeferences
dcc power sup pply of 3.3V V which is shown
s in fig
g4. The
[1]] Alaaddin, A.;
A Jae, k.S.; Y Yeji, H.; Yong, S.P.; Hanjungg, S. A
caalculated layou
ut area is 100*60m2.
Carbon Nannotube Field Effect Transisstor-Based Cirrcuit of
Electrophysiiology Retina iin Neural Appplications. Proceedings
of the 2nd World Congrress on Electrrical Engineering and
Computer Syystems and Scieence (EECSS'1 16) Budapest Hungary.
H
2016, 109_1-109_2.
[2]] Alaaddin, A.;
A Yeji, H.; Hyyuna, I.; Ye-Bin n, K.; Won-Yooung, J.;
Hanjung, S. New retina cirrcuit with lightt intensity depeendence
for neuromoorphic application. IEICE 20 016 Regular Congress
and Autumn Conference Koorea. 2016, 6355-636.
[3]] Brelen, M.EE.; Duret, F.; G Gerard B.; Delbeke, J.; Veraaart, C.
Creating a meaningful
m visuual perception in
i blind voluntteers by
optic nerve stimulation.
s J. N
Neural Eng. 20005, 2, S22-S28.
[4]] Humayun, M.S.;
M Weiland, J.D.; Fujii, G.U.; Greenbeerg, R.;
Williamson, R.; Little, J.; Mech, B.; Cim mmarusti, V.; Boemel,
B
G.; Dagneliee, G.; Juan, E. Visual percepttion in a blind subject
with a chronnic microelectrronic retinal prrosthesis. Visioon Res.
2003, 43, 2573-2581.
Fig. 4. Layout photogrraph of neuron
n retina circuit.. [5]] Richard, G.;; Keserue, M.; Feucht, M.; Post, N.; Horrnig, R.
Visual Perception after loong-term impllantation of a retinal
implant. Invvest. Ophthalm mol. Vis. Sci. 2008, 49: E-A Abstract
Conclusion 1786.
Inn this work, voltage
v regulaation of retin
na neuron circcuit for [6]] Rizzo, J.F.; Wyatt, J.; Looewenstein, J.; Kelly, S.; Shhire, D.
biiological acquuisition imagee is proposed d. The neuronn retina Methods annd perceptual thresholds for short-term ellectrical
stimulation of
o human retina with microelectrode arrays. Invest.
ciircuit consistss of current event generrator with dynamic
d
Ophthalmol. Vis. Sci. 2003, 44, 5355-53611.
feeedback stagee. The SPIC CE simulation n result shoow that
[7]] Zrenner, E. Will retinal immplants restore vision? Science 2002,
diifferent outpuut with differeent light inten
nsity. Moreovver, the
295, 1022-10025.
fuull neuron retin
na circuit is im
mplemented using
u 0.18m CMOS
[8]] Peachey, N.S.;
N Chow, A.Y. Subretinal implantation of
technology. semiconducttor-based photoodiodes: progreess and challen nges. J.
A
ACKNOWLED
DGMENT Rehab. Res. Dev. 1999, 36, 371-376.
[9]] Normann, R.A.;
R Maynard, E.M.; Guillorry, K.S.; Warreen, D.J.
Thhis research was
w supported d by the Bassic Science Research
R Cortical implants for the bliind, IEEE Spectr. 1996, 33, 544-59.
Prrogram throug gh the Nationnal Research Foundation
F off Korea
(N
NRF) funded by the Minnistry of Edu ucation, Scien
nce and
Teechnology (N NRF-2015R1D D1A1A01057495). This research
r
w also supp
was ported by Koorea Electric Power Corp poration
th
hrough Koreaa Electrical Engineering
E & Science Research
R
In
nstitute. (grantt number: R155XA03-66)

Advancced Research in
i Electrical annd Electronic Engineering
p-ISS
SN: 2349-58044; e-ISSN: 23
349-5812 Voluume 4, Issue 4,
4 July-Septemmber, 2017