VS-ST300SPbF Series

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Phase Control Thyristors
(Stud Version), 300 A
FEATURES
Center amplifying gate
International standard case TO-209AE (TO-118)
Hermetic metal case with ceramic insulator
Threaded studs UNF 3/4"-16UNF-2A or
TO- 209AE (TO-118) ISO M24 x 1.5
Compression bonded encapsulation for heavy duty
operations such as severe thermal cycling
PRODUCT SUMMARY Designed and qualified for industrial level
IT(AV) 300 A Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
VDRM/VRRM 400 V, 2000 V
VTM 1.28 V TYPICAL APPLICATIONS
IGT 200 mA DC motor controls
TJ -40 C to 125 C Controlled DC power supplies
Package TO-209AE (TO-118) AC controllers
Diode variation Single SCR

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS
300 A
IT(AV)
TC 75 C
IT(RMS) 470
50 Hz 8000 A
ITSM
60 Hz 8380
50 Hz 320
I2t kA2s
60 Hz 292
VDRM/VRRM 400 to 2000 V
tq Typical 100 s
TJ -40 to 125 C

ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VDRM/VRRM, MAXIMUM REPETITIVE VRSM, MAXIMUM NON-REPETITIVE IDRM/IRRM MAXIMUM AT
VOLTAGE
TYPE NUMBER PEAK AND OFF-STATE VOLTAGE PEAK VOLTAGE TJ = TJ MAXIMUM
CODE
V V mA
04 400 500
08 800 900
12 1200 1300
VS-ST300S 50
16 1600 1700
18 1800 1900
20 2000 2100

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ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current 180 conduction, half sine wave 300 A
IT(AV)
at case temperature 75 C
Maximum RMS on-state current IT(RMS) DC at 64 C case temperature 470
t = 10 ms No voltage 8000
t = 8.3 ms reapplied 8380 A
Maximum peak, one-cycle
ITSM
non-repetitive surge current t = 10 ms 6730
100 % VRRM
t = 8.3 ms reapplied 7040
Sinusoidal half wave,
t = 10 ms initial TJ = TJ maximum 320
No voltage
t = 8.3 ms reapplied 292
Maximum I2t for fusing I2t kA2s
t = 10 ms 100 % VRRM 226
t = 8.3 ms reapplied 207
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 3200 kA2s
Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.97
V
High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 0.98
Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.74
m
High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.73
Maximum on-state voltage VTM Ipk = 940 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.66 V
Maximum holding current IH 600
TJ = 25 C, anode supply 12 V resistive load mA
Typical latching current IL 1000

SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of rise Gate drive 20 V, 20 , tr 1 s
dI/dt 1000 A/s
of turned-on current TJ = TJ maximum, anode voltage 80 % VDRM
Gate current 1 A, dIg/dt = 1 A/s
Typical delay time td 1.0
Vd = 0.67 % VDRM, TJ = 25 C
s
ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/s,
Typical turn-off time tq 100
VR = 50 V, dV/dt = 20 V/s, gate 0 V 100 , tp = 500 s

BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/s
off-state voltage
Maximum peak reverse and IRRM,
TJ = TJ maximum, rated VDRM/VRRM applied 30 mA
off-state leakage current IDRM

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TRIGGERING
VALUES
PARAMETER SYMBOL TEST CONDITIONS UNITS
TYP. MAX.
Maximum peak gate power PGM TJ = TJ maximum, tp 5 ms 10.0
W
Maximum average gate power PG(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 2.0
Maximum peak positive gate current IGM TJ = TJ maximum, tp 5 ms 3.0 A
Maximum peak positive gate voltage + VGM 20
TJ = TJ maximum, tp 5 ms V
Maximum peak negative gate voltage - VGM 5.0
TJ = -40 C 200 -
DC gate current required to trigger IGT TJ = 25 C 100 200 mA
Maximum required gate trigger/
TJ = 125 C current/voltage are the lowest 50 -
TJ = -40 C value which will trigger all units 2.5 -
12 V anode to cathode applied
DC gate voltage required to trigger VGT TJ = 25 C 1.8 3 V
TJ = 125 C 1.1 -

DC gate current not to trigger IGD Maximum gate current/voltage 10 mA

not to trigger is the maximum
TJ = TJ maximum value which will not trigger any
unit with rated VDRM anode to
DC gate voltage not to trigger VGD cathode applied 0.25 V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range TJ -40 to 125
C
Maximum storage temperature range TStg -40 to 150
Maximum thermal resistance, junction to case RthJC DC operation 0.10
K/W
Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.03
48.5 Nm
Mounting torque, 10 % Non-lubricated threads
(425) (lbf in)
Approximate weight 535 g
Case style See dimensions - link at the end of datasheet TO-209AE (TO-118)

RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180 0.011 0.008
120 0.013 0.014
90 0.017 0.018 TJ = TJ maximum K/W
60 0.025 0.026
30 0.041 0.042
Note
The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC

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Maximum Allowable Case Temperature (C)

130 130

Maximum Allowable Case Temperature (C)

ST300S Series ST300SSeries
R thJC (DC) = 0.10 K/ W RthJC (DC) = 0.10 K/ W
120 120

110
110
Conduction Angle 100 Conduc tion Period
100
90
30
90 60
90 80
120 30
80 180 60
70 90
120
180 DC
70 60
0 50 100 150 200 250 300 350 0 100 200 300 400 500
Average On-state Current (A) Average On-state Current (A)

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

480
Maximum Average On-state Power Loss (W)

180 0.

R t
440 120
08
K/

hS
W

A
400 90 0.

=
12

0.
60 K/

03
360 W

K/
30

W
320

-D
0.2

el
280 RMSLimit K/
W

ta
R
240 0.3
K/ W
200 0.4
K/ W
160 Conduc tion Angle
0.6 K
/ W
120
1.2 K/
80 ST300SSeries W

40 TJ = 125C
0
0 40 25
80 120 160 200 240 280 320 50 75 100 125

Average On-state Current (A) Maximum Allowable Ambient Temperature (C)

Fig. 3 - On-State Power Loss Characteristics

Maximum Average On-state Power Loss (W)

650
600 DC
180
R

550
th

120
SA
=

500
0.

90 0.
03

08
450
K/

60 K/
W

W
0.1
-D

400 30 2
el

K/
ta

W
350
R

0.2
300 RMSLimit K/ W
250 Conduc tion Period 0.3
K/ W
200
150 0.6 K
/ W
ST300SSeries
100 1.2 K/ W
TJ = 125C
50
0
0 100 200 300 400 500
25 50 75 100 125
Average On-state Current (A) Maximum Allowable Ambient Temperature (C)

Fig. 4 - On-State Power Loss Characteristics

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7500 8500

Peak Half Sine Wave On-state Current (A)

Pea k Half Sine Wave On-state Current (A)

At Any Rated Load Condition And With Maximum Non Repetitive Surge Current
Rated VRRM Applied Following Surge. 8000 Versus Pulse Train Duration. Control
7000
Initial TJ = 125C 7500 Of Conduction May Not Be Maintained.
6500 @60 Hz 0.0083 s Initial TJ = 125C
@50 Hz 0.0100 s 7000 No Voltage Reapplied
6000 6500 Rated VRRM Reapplied
5500 6000

5000 5500
5000
4500
4500
4000
4000
3500 ST300S Series 3500 ST300S Series
3000 3000
1 10 100 0.01 0.1 1
Number Of Equa l Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s)

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

10000
TJ = 25C
Instantaneous On-state Current (A)

TJ = 125C

1000

ST300S Series

100
0 1 2 3 4 5 6 7 8 9
Instantaneous On-state Voltage (V)

Fig. 7 - On-State Voltage Drop Characteristics

1
Transient Therma l Impedanc e Z thJC (K/ W)

Steady State Value

R thJC = 0.10 K/ W
(DC Operation)

0.1

0.01

ST300S Series

0.001
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)

Fig. 8 - Thermal Impedance ZthJC Characteristics

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100
Rectangular gate pulse (1) PGM = 10W, tp = 4ms
a) Recommended load line for (2) PGM = 20W, tp = 2ms

Instantaneous Gate Voltage (V)

rated di/ dt : 20V, 10ohms; tr<=1 s (3) PGM = 40W, tp = 1ms
b) Recommended load line for (4) PGM = 60W, tp = 0.66ms
<=30% rated di/ dt : 10V, 10ohms
10 (a)
tr<=1 s
(b)

Tj=-40 C
Tj=25 C
Tj=125 C
1
(1) (2) (3) (4)
VGD
IGD
Device: ST300SSeries Frequency Limited by PG(AV)
0.1
0.001 0.01 0.1 1 10 100
Instantaneous Gate Current (A)

Fig. 9 - Gate Characteristics

ORDERING INFORMATION TABLE

Device code VS- ST 30 0 S 20 P 0 - PbF

1 2 3 4 5 6 7 8 9 10

1 - Vishay Semiconductors product

2 - Thyristor
3 - Essential part number
4 - 0 = Converter grade
5 - S = Compression bonding stud
6 - Voltage code x 100 = VRRM (see Voltage Ratings table)
7 - P = Stud base 3/4" 16UNF-2A threads
M = Stud base metric threads (M24 x 1.5)
8 - 0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
3 = Threaded top terminal 3/8" 24UNF-2A
9 - Critical dV/dt: None = 500 V/s (standard value)
L = 1000 V/s (special selection)
10 - None = Standard production
- PbF = Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95084

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 Outline Dimensions
Vishay Semiconductors

TO-209AE (TO-118)

DIMENSIONS - TO-209AE (TO-118) in millimeters (inches)

Ceramic housing

22 (0.87) MAX. 4.5 (0.18) MAX.

.
4.3 (0.17) DIA.

IN
)M
37
(0.

.
IN
9.5

)M
10.5 (0.41) White gate

86
NOM.

(0.
Red silicon rubber

22
245 (9.65) 10 (0.39)
Flexible leads
Red cathode C.S. 50 mm2
38 (1.50) (0.078 s.i.)
255 (10.04)
245 (9.65)

MAX. DIA.

White shrink
Red shrink
Fast-on terminals
AMP. 280000-1
REF-250
47 (1.85)
21 (0.82) MAX.

MAX.
27.5 (1.08)
MAX.

SW 45

3/4"16 UNF-2A (1)

49 (1.92) MAX.

Note
(1) For metric device: M24 x 1.5 - length screw 21 (0.83) maximum

DIMENSIONS - TO-209AE (TO-118) WITH TOP THREAD TERMINAL 3/8" in millimeters (inches)
Ceramic housing
17 (0.67) DIA.

3/8"-24UNF-2A
25 (0.98)

38 (1.5) DIA. MAX.

77.5 (3.05)
80.5 (3.17)

21 (0.83) MAX.

47 (1.85)
MAX.
27.5 (1.08)
MAX.

SW 45

3/4"-16UNF-2A (1)

Note
(1) For metric device: M24 x 1.5 - length screw 21 (0.83) maximum

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Revision: 02-Aug-07 1
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