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NATIONAL INSTITUTE OIT TECIINOLOGY KURTII(SHETRA

TI]EORY EXAN'IINATION

QLiestion Paper

Montlr and year of the Exam..... .........Dec 2016....-.

Programme:.........B.Tech. (ECE) Semester . 51h.........

Sub.ject:............1\{icro-electronics
Course No............8CT309

Nurnberof questions to be attempted ......05 Time allowed ......3 hours.

02..... page

Note:
1) Q. No. I is compulsory. Attempt any four from the remaining questions.
2) All parts of the question must be done'.rt one placc.
3) Assume missing data if any.

1a; Witt, the help of a flow char1, briefly explain the procedure lor preparing silicon (3)

wafer starting from electronic grade silicon.

(1.s)
(b)Discuss DC plasma excitation?

(2)
(c) Derive Fick's first Law of diffusiop.

(d) How the stacking faults are generated in thermal oxidation of silicon? Explain. (l s)

()\
(e) How an epitaxial layer is evaluated? Discuss.

(a),Explain the working of aCZcrystal grower with the help of schematic diagram.

(b) What determines the maximum pull rate of a crystal in CZ crystal grower? Derive
(s +s)
the expression for maximum pull rate. How the pull rate affects the defect properties of
crystal?

(a) A silicon wafer isoxidized in dry oxygen at 1000'C for I hour. This is
followed by wet oxidation at 1000'C. If the final oxide thickness required is 1.5 micron,
what should be the duration of wet oxidation in hours.
Assume A=0.165 pm, B:0.01l7 pmz/hand t = 1.4 hrs for dry oxidation at 1000'C. For
wet oxidation at 1000"C assume A:0.226 pm, 8:0.287 pmzlhr and t:0 hr'
(s)

t
t1b; and negative photo-resist? Why positive photo-resist
niff.r.ntiate between positive (s)
. offers betler resolution? Explain.

PTO
(a) With ihe help of a neat diagram explain the working of a reactive ion etching I

syster n?
(b) What are the applications of deposited silicon dioxide and silicon nitride films in IC
fabrication process? Explain the piocess of chen-rical vapor:r depositiorr for silicon (-! i -5)
nitride using a hot wall reduced pressure reactor.

(a) The boron diffusion is performed into n-type silicon with background
concentralion of 3xi06 atonrs / crnt. lf constant source difTusior-r at 900"C for l0
nrinutes, followed by a 45 minute drive-in at 1100'C is done, then determine the
resulting boron concentratior-r at silicon surface and jr-rnction depth. (Assurre D6:0.76
c,n'l sec and E:3.46eV for boron ditfusion in silicon).

(b) What is sheet resistance of a diffused layer? Define. List the metl-rods used for
(7+.i'1
deterrnining the sheel. resislatrce.

(a) Discuss the process of lon implantation with the help of a .diagrarn of Ion
implantation apparatus. (5)

(b) Why implanted layers require annealing? What are the different annealing
methods? (3)

(c) What is channelling in ion implantation? What is done to reduce its effect? (2)

(a) Discuss the process of physical vapour deposition for metallization with the help of
a neat diagram.

(b) What are the different mechanisms of failure of metallization? Discuss. /5 r

(a) What are the different types of IC packages? Explain with the help of diagrams? (4)

(b) Explain the N-MOS fabrication process sequence witl-r the help of flow chaft and
other diagrams?