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# Quiz Solution

Q1: A charged particle has a charge of 210-19 C and mass equal to 500 times more than that of an
electron. If it falls through a potential of 1500 V, find the final velocity attained by the particle
and kinetic energy acquired if its initial velocity is 1.5 10 6 m/s. Verify law of conservation of
energy.

Q2: Calculate the Fermi function at 6.5 eV if EF = 6.25 eV and T = 300 K. Repeat at T = 950 K assuming
that the Fermi energy does not change. At what temperature does the probability that an energy
level at E = 5.95 eV is empty equal 1 %.

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Q3: In a parallel plate diode, the cathode and anode are spaced 5 mm apart and the anode is kept at
220 V d.c. with respect to cathode. The initial velocity of an electron is 2 x106 m/s in the
direction towards anode. Calculate,
i) velocity and time of electron at midway between cathode and anode
ii) velocity and time of electron when it reaches anode.

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Q4: At what temperature does the energy bandgap of silicon equal exactly 1 eV?

Q5 : An electron having initial velocity corresponding to 300 V are projected perpendicularly into a
uniform magnetic field of density 10-3 Wb/m2. Find the radius of path and time for one
revolution. If an electron is accelerated at an angle of 40 o with the field, what is the new value, of
radius of path, time for one revolution and pitch of the helical path.

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Q6: Consider an GaAs Hall effect device with the geometry shown in the schematic. Let L = 10 -2 cm,
W = 10-3 cm, t = 10-4 cm. Also assume Ix = 2 mA, Bz = 50 mT and VH = 10 mV. Find (a) Hall
coefficient, (b) conductivity type (p- or n-type), (c) majority carrier concentration, (d) resistivity
and (e) mobility of the semiconductor sample.

Solution
(a)
L = 10-2 cm, W = 10-3 cm, t = 10-4 cm. Also assume Ix = 2 mA, Bz = 50 mT and VH = 10 mV

(b)
VH = 10 mV , A negative Hall voltage for this geometry implies that we have an n-type
semiconductor.

(c)

## (d) & (e)

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Q7: A typical starting material for CMOS processes is lightly p-doped silicon with a boron doping
concentration of NA = 81015 cm-3 boron atoms. At what temperature will this material become
intrinsic, i.e. ni (T) = NA? Assume a temperature independent band gap in silicon with E g = 1.12
eV.

Solution
Assume the bandgap energy of silicon is 1.12 eV and does not vary over this
temperature range. NA = 81015 cm-3 and ni (T) = NA= po:

2 =

1.51010 cm-3 .

2
=

1.5 1010 2
= 1.12

0.0259

3

2 =
300

300
3
1.12
8 1015 2
= (1.414 1039 )
300 0.0259

300