ESE-2016 : TEST SERIES

ET UPSC Engineering Services Examination

OFFLINE
MODE

Subjectwise Test 1 : Objective

Answer Key & Solutions Network Theory & EDC

A N S W E R KEY

1. (c) 16. (b) 31. (c) 46. (c)

2. (c) 17. (d) 32. (a) 47. (c)

3. (b) 18. (a) 33. (a) 48. (c)

4. (c) 19. (c) 34. (b) 49. (b)

5. (b) 20. (c) 35. (b) 50. (d)

6. (c) 21. (c) 36. (b) 51. (c)

7. (d) 22. (b) 37. (c) 52. (c)

8. (a) 23. (b) 38. (c) 53. (c)

9. (a) 24. (b) 39. (c) 54. (a)

10. (d) 25. (a) 40. (d) 55. (d)

11. (c) 26. (c) 41. (c) 56. (a)

12. (c) 27. (c) 42. (d) 57. (b)

13. (c) 28. (d) 43. (a) 58. (d)

14. (d) 29. (c) 44. (b) 59. (b)

15. (c) 30. (d) 45. (c) 60. (a)

 10 ESE-2016 : TEST SERIES • E & T ENGINEERING

1. (c)
Total energy = 0.8 × 6 = 4.8 W
Energy 4.8
Power = = = 0.48 W
time 10

2. (c)
dQ
We know that i = ⇒ Q = ∫ idt
dt
Q 4 sec = Area under the curve from t = 0 to t = 4
1
= 10 × 1 + (10 + 5) × 1 + 5 × 2 = 27.5 C
2
3. (b)
The circuit can be modified as
1 kΩ

I2 I1

+
v1 3 kΩ 10 A (5 20)k = 4 kΩ
–

4 k × 10
I2 = = 5 mA
(4 + 1+ 3) k
⇒ v 1 = 5 m × 3 k = 15 V
5. (b)

1
v (t) = i (t ) ⋅ i(t )
2
v ( t ) = R ⋅ i (t )
from here
1
R = i (t )
2
⇒ current controlled

6. (c)
Redrawing the circuit
Cas
Casee - I open switch

R (2R 2R) = R

Req

R (2R 2R) = R

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 Test - 1 (Obj) : Network Theory & EDC 11

⇒ Req = (2 R  2 R )
= R
Cas
Casee - II closed switch

R R2
R1
R

Req
R 1 = (2 R  2 R ) = R
R 2 = (2 R  2 R ) = R
⇒ Req = ( R  R ) + ( R  R ) = R
⇒ equivalent resistance remains same.

7. (d)
R

2R Req

τ = R eq ⋅ C eq
R × 2R C × 2C
= ×
R + 2R C + 2C
4
= RC
9

8. (a)
Modifying the circuit
12 µF (80 + 40)µ = 120 µF
a 12 µF 120 µF

50 µF
Ceq 12 µ F (30 + 20 + 10)µ = 60 µF
12 µF
60 × 60
50 + µ = 80 µF
b 60 + 60
60 µF

12 µF

12 µF 120 × 80 µ = 48 µF
200

12 × (48 + 12) 12 × 60
Ceq = µ= µ = 10 µF
12 + 48 + 12 72

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 12 ESE-2016 : TEST SERIES • E & T ENGINEERING

9. (a)
When R L = R Th , power transferred is maximum
2Ω V1 4Ω
+ v –
x I
1Ω
+ V
–
+ 3vx
–

Applying KCL
V1 V1 − 3v x V1 − v
+ + = 0
2 1 4
V1 = – v x
V1 V1 + 3V1 V1 V
+ + =
2 1 4 4
2V1 + 16V1 + V1 V
=
4 4
V = 19 V 1
V − V1 18V1
I = =
4 4
V 19 × 4 V1
RTh = I = 18 V = 4.22 Ω
1

1 0. (d)
Replacing independent sources by their internal resistances

6Ω 6Ω 6Ω
A B
A 6Ω B

6Ω
4Ω

4Ω
12 × 4 48
RN = = =3Ω
12 + 4 16
11. (c)
Photodiode: Current varies in accordance with intensity of light falling as electron-hole pair generation
depends on light intensity.
Tunnel diode: Exhibit negative resistance property due to which it is used in microwave oscillator circuit.
Zener diode: Used for voltage reference, i.e. maintain the constant voltage across the load terminals
(independent of load) i.e. limiting the voltage across the terminals in reverse bias.
Schottky diode: Uses only majority carrier (because it is metal-semiconductor junction). Due to this there
will be no storage time required for storing minority carriers in case of making of the switch. So lesser
switching time and therefore high frequency of operation.
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 Test - 1 (Obj) : Network Theory & EDC 13

12. (c)
1
VH ∝
Concentration
VH 2 p1 1
∴ ⇒ VH 2 = VH 1
VH1 = 2p1 2
14. (d)
ICEO = (1 + β)ICBO
27 = γ × 0.5
or γ = 54
19. (c)
I

ta e
e
sis tiv
nc
re ega
IP

n
IV

VP VV VD

20. (c)

D1 D2

This configuration will not work as a transistor because base width will be too large. So that carrier injected
from forward biased diode (equivalent to emitter-base junction) will not reach to collector.
21
21.. ( c)
for t = 0+

10 Ω

i1 v2

+ 30 Ω
60 V –
30 Ω

v 1 (0+) = v 1 (0 –) = 0
60 60
i1 (0+) = = =4A
(30 30) 15
for t = ∞

10 Ω
+ i3(t)
v2
60 Ω + – 30 Ω
–
30 Ω

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 14 ESE-2016 : TEST SERIES • E & T ENGINEERING

60
i 3 (∞) = = 1.5 A
(10 + 30)
v 2 (∞) = 30 × 1.5 = 45
Hence option (c).

22
22.. (b)
Charged capacitor behaves as open circuit while charged inductor behaves as short circuit.

23
23.. (b)
For series circuit
R C
ξ =
2 L
2 2
ξ = =1 ⇒ Critically damped
2 2
for parallel circuit
1 L
ξ =
2R C
1 2 1
= = < 1 ⇒ underdamped
2×2 2 4

24
24.. (b)
0+
v (t ) t = 0+ = 1 i dt
∫ c
0−

v (t ) t = 0+ = will be maximum for only unit impulse function.

25
25.. (a)
R

vi C RL

Voltage across RL will be maximum when current through capacitor C is zero i.e. for DC or 0 kHz.

26
26.. (c)
2
Power = Irms R
2
 2
 6
( )
2
=  (2)2 +   ×1 = 4 + 18
  2  

= 22 W

27
27.. (c)
Z 21
h21 = −
Z 22

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 Test - 1 (Obj) : Network Theory & EDC 15

29
29.. (c) 10 Ω I1 I2
Maximum power is transferred, if RL = RTh + +
V1 = 40 I 1 + 60 I 2
V2 = 80 I 1 + 120 I 2 V1 2 Port V2 RTh
Network
V1 = –10 I1
–10 I 1 = 40 I 1 + 60 I 2 – –
–5I 1 = 6I 2
−6
V2 = × 80 I 2 + 120 I 2 = 24 I 2
5
V2
R T h = RL = = 24 Ω
I2

30 . (d)
At half power frequencies, power is half of power at resonance.

31. (c)
For silicon diode the forward voltage decreases by 2.1 mV/°C
∴ From 25°C to 100°C = 75°
Vf = 75 × (–2.1) mV
≈ –157.5 mV ≈ –0.15 V
∴ The voltage across the diode terminal at 100°C = 0.7 – 0.15
= 0.55 V

32. (a)
NA = 2.5 × 1013/cm3,
ND = 1 × 1013/cm3
NA > ND ⇒ p -type
p0 = NA – ND
= 2.5 × 1013 – 1 × 1013
= 1.5 × 1013/cm3

34. (b)

I = I0eV / ηVT

1
log I = log I 0 + ×V
ηVT
If we draw a graph between V and log I then

log I
1
slope
ηVT

log I0

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 16 ESE-2016 : TEST SERIES • E & T ENGINEERING

35. (b)
Current, i = neA vd

36. (b)
We know that ICEO = (β + 1) ICO and ICBO are slightly greater than ICO due to some current induced and flow
at the surface and it also doubles for every ten degree rise in temperature.

38. (c)
NA = 4ND
∵ ND x no = NA x po
∴ x no = 4 x po
Also W = 8 Å = x no + x po
x no = (W – x po)
 1 
x no =  8 − xno 
 4 
or 4x no = 32 – x no
32
or x no = = 6.4 Å
5

39. (c)
N 
Ef n = EC − kT ln  C 
 ND 
N 
EC – Efn = kT ln  C 
 ND 

 NC 
kT2 ln 
EC − Efn2  ND 
=
EC − Efn1  NC 
kT1 ln 
 ND 
EC − Efn2 450° K
=
0.4 eV 300° K
EC – Efn = 0.6 eV
2

40. (d)
nno = ND
ni2
npo =
NA

42
42.. ( d)
v2 N2
= [N - number of turns]
v1 N1
L ∝ N2
v2 L2
⇒ =
v1 L1

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 Test - 1 (Obj) : Network Theory & EDC 17

43. (a)
Given I1 = I2= 10A
The currents in the various branches are shown in the circuit.
I1 A I2 B j8 A
(6 – j 8)A (6 + j 8)A

120∠0°V C

IL –j 16 A IR 6 A

I2 = 10 = IR + j 8
so 10 = IR2 + 64
IR = 6 A
Input current at node B
I2 = 6 + j 8
I2 = 10∠+tan–1 (8/6)
So I2 will lead by tan–1 8/6.
KCL at node A
I1 = IL + 6 + j 8
The only condition which make I1 = I2 is I1 = I2∗
I1 = 6 – j 8
I1 = 6 – j 8 = 10∠–tan–1 (8/6)
I2 = 6 + j 8 = 10∠+tan–1 (8/6)
So I1 will lag by tan–1 8/6.

44
44.. ( b)
1
Resonant frequency ω0 =
LC
0.1
ω =
LC
ω < ω0
1
ωL <
ωC
⇒ Capacitive reactance is more and current leads the voltage.

45
45.. ( c)
Applying KVL
di 1
1⋅ i + 1 + ∫ i ⋅ dt = 10
dt C
i (0 –) = i (0 +) = 0
di
0 + 1⋅ + 0 = 10
dt
di
= 10 A/s
dt

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 18 ESE-2016 : TEST SERIES • E & T ENGINEERING

47. (c)
Doping level = DE > DC > DB
In PNP transistor WB < Lp

48. (c)
∆n ∆p
Generation rate = =
τn τp
Excess carrier, ∆n = ∆p
1015
generation rate = = 1020 pair/cm3/sec
10 × 10 −6

49. (b)
1.24
Eg =
λ(µm)
GaAs = Eg = 1.47 eV at room temp
Si = Eg = 1.1 eV at room temp
Ge = Eg = 0.72 eV at room temp
λGaAs < λ Si < λGe
50. (d)
Antimony (Sb) is a pentavalent impurity and therefore it increases the number of free electron.
51. (c)
VD

VG = 2 V =

VS
VT = 0.5 V
VGS = VG – VS = 2 – VS
and VDS = VGS – VT
VD – VS = 2 – VS – 0.5
VD = 1.5 V
55. (d)
Due to increase in temperature energy band gap reduces. So assertion is false.
56. (a)
Thevenin’s theorem is applicable to linear and bilateral networks only and the diode is a non-linear and non-
bilateral element. So Thevenin’s theorem cannot be applied in a network if it contains a diode.
57. (b)
Both statements are correct but reason for A is that in a direct bandgap material during recombination
energy is emitted in the form of light (99%).
59. (b)
(i) Transient response = Natural response or Free response
(ii) Steady state response = Forced response.

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