Chapter 1
Problem Solutions 2 atoms per cell, so atom vol
4 r 3
2
1.1 3
(a) fcc: 8 corner atoms 1 / 8 1 atom
6 face atoms 1 / 2 3 atoms
Total of 4 atoms per unit cell
(b) bcc: 8 corner atoms 1 / 8 1 atom Then
1 enclosed atom =1 atom 4 r 3
Total of 2 atoms per unit cell 2
(c) Diamond: 8 corner atoms 1 / 8 1 3
Ratio 3
100% 68%
atom 4r
6 face atoms 1 / 2 3 atoms
3
4 enclosed atoms = 4 atoms
Total of 8 atoms per unit cell (d) Diamond lattice
_______________________________________ Body diagonal
8
d 8r a 3 a r
1.2 3
(a) Simple cubic lattice: a 2r 8r
3
Then r
a 3
5.43 3 1.176 Ao
Ratio 3 8 8
100% 74%
16 2 r 3 Center of one silicon atom to center of
o
(c) Body-centered cubic lattice nearest neighbor 2r 2.35 A
4
d 4r a 3 a r (b) Number density
3 8
5 10 22 cm 3
3
4 3
Unit cell vol a 3
r 5.43 10 8
3
(c) Mass density
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 1
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
N At.Wt.
5 10 22 28.09 1.7
o
NA 6.02 10 23 (a) Simple cubic: a 2r 3.9 A
2.33 grams/cm 3 4r o
(b) fcc: a 5.515 A
_______________________________________ 2
4r o
(c) bcc: a 4.503 A
3
2 4r o
(d) diamond: a 9.007 A
3
1.4 _______________________________________
(a) 4 Ga atoms per unit cell
4 1.8
Number density (a) 21.035 2 21.035 2rB
5.65 10 8 3
o
Density of Ga atoms 2.22 10 22 rB 0.4287 A
cm 3
_______________________________________ 1.097 10 22 cm
3
N At.Wt.
1.6
a Mass density
2 NA
2
sin 2 54.74
2 a
2
3
3 2
1.0974 10 12.5 22
109.5 6.02 10 23
_______________________________________
0.228 gm/cm 3
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 1
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
4r o o
(b) a 5.196 A Then a 4.62 A
3 Density of A:
1 1
# of atoms 8 1 2 1.01 10 22 cm
8
2
4.62 10 8 3
Number density 3
5.196 10 8
3
Density of B:
1.4257 10 22
cm 1
1.01 10 22 cm
3
4.62 10 8 3
Mass density
1.4257 10 12.5
3
22
(b) Same as (a)
6.02 10 23 (c) Same material
0.296 gm/cm 3 _______________________________________
_______________________________________ 1.13
1.10 2 2.2 21.8 o
a 4.619 A
From Problem 1.2, percent volume of fcc 3
atoms is 74%; Therefore after coffee is (a) For 1.12(a), A-atoms
ground, Surface density
Volume = 0.74 cm 3 1 1
2
_______________________________________ a
4.619 10 8
2
2
4.687 10 14 cm
1.11 o
o
For 1.12(b), B-atoms: a 4.619 A
(b) a 1.8 1.0 2.8 A
1
1 / 2 Surface density 4.687 10 14
(c) Na: Density a2
2.8 10 8 3
cm 2
1 1 Surface density
22.99 35.45 1
2 2 2 3.315 10 14
4.85 10 23 a 2
6.02 10 23
cm 2
Then mass density
B-atoms;
4.85 10 23
2.21 grams/cm Surface density
2.8 10 8 3
2
1
3.315 10 14 cm
3 a 2
_______________________________________ 2
o
1.12 For 1.12(b), A-atoms; a 4.619 A
o
(a) a 3 2 2.2 21.8 8 A Surface density
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 1
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
1 _______________________________________
2 3.315 10 14
a 2
1.17
cm 2
1 1 1
B-atoms; Intercepts: 2, 4, 3 , ,
Surface density 2 4 3
1 (634) plane
2 3.315 10 14 cm _______________________________________
a 2
2 1.18
For 1.12(a) and (b), Same material o
(a) d a 5.28 A
_______________________________________
a 2 o
ao (c) d 3.048 A
3
1 _______________________________________
Surface Density 2
ao 2
1.19
(b) Same as (a) 1 (a) Simple cubic
_______________________________________ (i) (100) plane:
Surface density
1.15
1 1
(i) (110) plane 2
(see Figure 1.10(b)) a
4.73 10 8
2
2
4.47 10 14 cm
(ii) (111) plane
(ii) (110) plane:
(see Figure 1.10(c))
1
Surface density
(iii) (220) plane
2
a 2
2
1 1 3.16 10 14 cm
, , 1, 1, 0
2 2 (iii) (111) plane:
Same as (110) plane and [110] direction 1
Area of plane bh
1 1 1 2
(iv) (321) plane , , 2, 3, 6 o
3 2 1 where b a 2 6.689 A
Intercepts of plane at Now
p 2, q 3, s 6 2
(321) plane
6 o
_______________________________________ So h 4.73 5.793 A
2
1.16
(a)
Area of plane
1 1 1
, , 313
1 3 1
(b)
1
2
6.68923 10 8 5.79304 10 8
1 1 1
, , 121 19.3755 10 16 cm 2
4 2 4
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 1
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
1
3 (c) (111) plane:
Surface density 6
Surface density
19.3755 10 16 2
2
2.58 10 14 cm
3 2 5.43 10 8 2
cm 2 a 6.703 A
2 2
(ii) (110) plane:
(a) #/cm 3
2
Surface density 1 1
a 2
2 8 6
8 2 4
6.32 1014 cm 2
(iii) (111) plane:
a 3
6.703 10 8 3
3
1 1.328 10 22 cm
3
Surface density 6 1 1
4 2
19.3755 10 16 (b) #/cm 2
4 2
2 2
2.58 10 14
cm a 2
(c) fcc 2
(i) (100) plane:
2
6.703 10 8 2
2
Surface density 2 8.94 10
14
2
3.148 10 14
cm
a
cm 2 (c) d
a 2
6.703 2 4.74 Ao
(ii) (110) plane: 2 2
2 1 1
Surface density (d) # of atoms 3 3 2
a 2
2 6 2
2 Area of plane: (see Problem 1.19)
6.32 1014 cm o
(iii) (111) plane: b a 2 9.4786 A
1 1
3 3 h
6a o
8.2099 A
Surface density 6 2
2
19.3755 10 16 Area
2
1.03 10 cm 15
1 1
bh 9.4786 10 8 8.2099 10 8
_______________________________________ 2 2
3.8909 10 15 cm 2
1.20
(a) (100) plane: - similar to a fcc:
2
Surface density 2
5.43 10 8 2 #/cm 2
3.8909 10 15
2
6.78 10 14 cm = 5.14 10 14 cm 2
1.24
5 1017
(a) 100% 10 3 %
5 10 22
2 1015
(b) 100% 4 10 6 %
5 10 22
_______________________________________
1.25
(a) Fraction by weight
2 10 10.82 1.542 10
16
7
5 10 28.06
22
10 30.98 2.208 10
18
5
5 10 28.06
22
_______________________________________
1.26
1
Volume density 2 1016 cm 3
d3
o
So d 3.684 10 6 cm d 368.4 A
o
We have a 5.43 A
o
d 368.4
Then 67.85
ao 5.43
_______________________________________
1.27