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VISVESVARAYA NATIONAL INSTITUTE

OF TECHNOLOGY
NAGPUR

VLSI DESIGN
MTECH 2017-19
MNFT LAB (SPROCESS)

ASSIGNMENT 4
Submitted by:

V.Deepak
I.C.S.Tejaswi
Ketan Sisodia
Ganesh Cheduluri
Anshuman Shukla
Fabrication of Pn junction diode using S process and characterizing in S device.

SPROCESS CODE:

line x location=0.0 
line x location= 1<um>
line y location = 0.0
line y location= 0.4<um>
region silicon substrate
init concentration=1.0e+15<cm­3> field=Boron
pdbSet Grid SnMesh min.normal.size 1.0e­3 ;# in microns
pdbSet Grid SnMesh normal.growth.ratio.2d 1.4 ;# used in 1D and 2D
pdbSetBoolean Silicon Mechanics Anisotropic 1
diffuse temperature=1020<C> time=10.0<min> O2 
mask name=gate_mask segments = { 225<nm> 275<nm> } negative
etch oxide type=anisotropic thickness=0.1<um> mask=gate_mask
struct tdr= after_etching_oxide FullD; 
refinebox min = {0<nm> 100<nm>}  max = {350<nm> 300<nm>} xrefine = 
{5.0<nm> 5<nm> 5<nm>} yrefine = {5.0<nm> 5<nm> 5<nm>}
grid remesh
implant Phosphorus dose=2.0e13<cm­2> energy=5<keV> tilt=0 rotation=0 
diffuse temperature=1050<C> time=10.0<s>
struct tdr=pn_with_oxide FullD; # ­Well
strip oxide
struct tdr=pn_final FullD; # n­Well
transform cut location= 0.80 down
refinebox clear
refinebox clear.interface.mats
line clear
pdbSet Grid Adaptive 1
pdbSet Grid AdaptiveField Refine.Abs.Error 1e37
pdbSet Grid AdaptiveField Refine.Rel.Error 1e10
pdbSet Grid AdaptiveField Refine.Target.Length 100.0
pdbSet Grid SnMesh DelaunayType boxmethod
refinebox name= Global \
refine.min.edge= {0.01 0.01} refine.max.edge= {0.1 0.1} \
refine.fields= { NetActive } def.max.asinhdiff= 0.5 \
adaptive all add
grid remesh
contact name= "Body" bottom Silicon
contact name= "ntype" box Silicon adjacent.material= Gas \
xlo= ­0.05 xhi= 0.01 ylo= 0.23 yhi= 0.27
struct smesh=PNJUNCTION
SDEVICE CODE:

File{
Grid = "PNJUNCTION_fps.tdr"
Plot = "pnout_des.tdr"
Current = "pnout_des.plt"
Output = "pnout_des.log"
}
Electrode{
{ Name = "Body" Voltage=0}
{ Name = "ntype" Voltage=0.0}
}
Physics{
Hydro
Recombination(Avalanche(CarrierTempDrive))

AreaFactor=1
Mobility (DopingDependence HighFieldSat Enormal)
EffectiveIntrinsicDensity (OldSlotboom)
Recombination(SRH Auger Avalanche(ElectricField) 
eAvalanche(CarrierTempDrive) hAvalanche(Okuto)
)

HeavyIon (
Direction=(0,1)
Location=(1.5,0)
Time=1.0e­13
Length=1
Wt_hi=3
LET_f=0.2
Gaussian
PicoCoulomb )
}

Plot{
eIonIntegral hIonIntegral MeanIonIntegral
eDensity hDensity eCurrent hCurrent 
Potential SpaceCharge ElectricField
eMobility hMobility eVelocity hVelocity 
Doping DonorConcentration AcceptorConcentration HeavyIonChargeDensity
}
Math{
Extrapolate
RelErrControl
BreakAtIonIntegral
ComputeIonizationIntegrals(WriteAll)
}
Solve{
 NewCurrentPrefix="init"
Coupled(Iterations=50){Poisson}
Coupled{ Poisson Electron Hole}
NewCurrentPrefix=""
Quasistationary(
InitialStep=0.01 MinStep=1e­5 MaxStep=0.3
Goal{ Name="Body" Voltage=10}
){Coupled{ Poisson Electron Hole} }
}

PLOTS:

BEFORE DOPING : AFTER DOPING :
AFTER OXIDE MASK ETCH : AFTER MAKING CONTACTS :

I­V CHARACTERSTICS :

Threshold Voltage 0.69 V