Homework 3
Symbols
Device parameters
Pcells
B. Verification decks
• Area/Cost
• Reliability
• Scalability
• Speed (delay, operating frequency)
• Power dissipation
• Energy to perform a function
• Electrons that penetrated the gate oxide remain trapped there (in normal operating conditions). The
hot-e effect is accumulative ! • The negative trapped charge in the oxide (near the drain) of an NMOS
cause an increase in Vt. • The hot-e effect result is a degradation in the NMOS Ids (due to the higher
effective Vt). Meaning: circuits slow down! • Note! the hot-e degradation has a negative feedback
behaviour. • Hot-e degradation is a long term reliability concern. The device life time that Intel
guarantees is 7 years of constant operation at the worst case conditions (within the spec). Meaning:
When a device frequency is tested after fabrication, the hot-e degradation with time must be taken into
account