The effective conduction and valence band density of States at T=300K are Nc=Nv=2*1025/m3. What is
the band gap energy Eg in eV of this material. If the semiconductor is doped with Nd =1*1016/cm3. What
are the equilibrium hole and electron concentration at 300K? If the same piece of semiconductor
already having Nd=1*1016/cm3 is also doped with Na = 2*1016/cm3 .what are the new equilibrium
electron and hole concentration at 300K.
Soln :
a)
4 *1050
Eg = 0.02586 * ln( )
4 *1012
Eg = 2.26eV
b)
Hence, no = 1*1022/m3
4 * 1012
Taking , po = ni2 / no = 1022
po = 4*10-10 /m3
c)
n = ni2 / (NA-ND)
no = (4*1012) / (1*1022)
no = 4*10-10 /m3
Now , po = NA-ND
po = 1*1022 /m3b
Q2 ) Determine EFn and EFp, with respect to the bottom of the conduction band and top of the valence
band,respectively, if a slab of N-type silicon (Nd = 1016 cm-3 ) is illuminated so that the steady-state
concentration of the additional electron-hole pairs is δn = 2 x 1016 cm-3. What is the difference between
quasi-Fermi levels?
Soln:
1) Before Illumination :
n = ND = 1016 cm-3 = Nc e ( E E c F ) / KT
……(1)
EF is below EC by 0.206 eV
p= = = 22.5* cm-3
p = 22.5* cm-3 = Nv e ( E F
E V ) / KT
……(2)
EF is above by 0.18 eV
2) After illumination
n= no + δn =Nd + δn = 3*1016
2*1016 = = Nv e ( E F
E V ) / KT
EFp - EV = kT * ln( )
= 0.026 *ln ( )
= 0.1625 eV
Eg =2*kT*ln
= 2*0.0256* ln
= 2.13 eV
2.13-0.177-0.125= 1.825eV
Q3 ) Assume Fermi energy level for a particular material is 6.25 eV and the electrons in this material
follows the fermi-dirac distribution function. Calculate the temperature at which there is 1 %
probability that a state 0.30 eV below the fermi energy level will not contain an electron.
Soln :
Given data , =1% = 0.3eV , k=
We know, Probability of the state energy E begin occupied by the electron is given by
= so,
0.01= → 0.01( ) =1
= 100 → = 99
Soln:
At E=EF ; E-EF = 0
a) We know that
σ = = =2
Now ,
σ = qnoµn + qpoµp
po =
We have :
n o p o = n i2
no =
= 9000 cm-3
no = 9000 cm-3
po = 2.5 × 1016 cm-3
b) Now ,
δn = δp = 2 × 1016 cm-3
n = no + δn
= 9000 + 2 × 1016
= 2 × 1016 cm-3
p = po + δp
= 2.5 × 1016 + 2 × 1016
= 4.5 × 1016 cm-3
Resistivity :
ρ, = 1/(qnµn + qpµp)
= 0.1213 ῼ-m
i f
%Δρ= * 100
i
0.5 0.1213
= * 100
0.5
Δ ρ = 75.74 %
Q. 6) Calculate the built-in voltage of a junction in which the p and n region are doped equally with
1016atoms/cm3. Assume ni = 1.5x1010/cm3. With the terminals left open, what is the width of the
depletion region, and how far does it extend into the p and n region. If the cross-sectional area of the
junction is 100 µm2, find the magnitude of the charge stored on either side of the junction.
Soln
Given
NA= NA = 1016 atoms/cm3
ni = 1.5x1010/cm3
A = 100 µm2
ɸbi = ln
= 0.026 ln
= 0.697 V
Wdep = √
=√
= 4.301 x10-5 cm
= 0.43 µm
Calculation of Xn and Xp
xn = √
= √
= 3.041 x10-5 cm
= 0.30 µm
xn =
=
= 2.101 x 10-5 cm
= 0.21 µm
Qj = q xn A ND
= 3.36 × 10-20 C