EMX1 / UMX1N / IMX1

Transistors

General purpose transistors

(dual transistors)
EMX1 / UMX1N / IMX1

!Features !External dimensions (Units : mm)

1) Two 2SC2412K chips in a EMT or UMT or SMT
EMX1
package.
2) Mounting possible with EMT3 or UMT3 or SMT3

0.5 0.5
(4) (3)

0.22

1.0
1.6
(5) (2)

automatic mounting machines. (6)

1.2
1.6
(1)

3) Transistor elements are independent, eliminating

0.13

0.5
interference. Each lead has same dimensions

4) Mounting cost and area can be cut in half. ROHM : EMT6

Abbreviated symbol : X1

UMX1N

0.65
!Structure

(3)
(4)

1.3
2.0
0.2

(2)
Epitaxial planar type
(5)
(6)

0.65
(1)
NPN silicon transistor 1.25

2.1
0.15

0.9
0.7
0to0.1

0.1Min.

!Equivalent circuit Each lead has same dimensions

ROHM : UMT6
EMX1 / UMX1N IMX1 EIAJ : SC-88
(3) (2) (1) (4) (5) (6) Abbreviated symbol : X1

Tr1 Tr1 IMX1

Tr2 Tr2
0.95 0.95
(6)

(1)
0.3

2.9
1.9
(2)
(5)

(4) (5) (6) (3) (2) (1)

(4)

(3)

1.6

2.8
0.15

1.1
0.8

The following characteristics apply to both Tr1 and Tr2.

0to0.1

0.3to0.6
Each lead has same dimensions

ROHM : SMT6
EIAJ : SC-74

!Absolute maximum ratings (Ta = 25°C) Abbreviated symbol : X1

Parameter Symbol Limits Unit
Collector-base voltage VCBO 60 V
Collector-emitter voltage VCEO 50 V
Emitter-base voltage VEBO 7 V
Collector current IC 150 mA
Power EMX1, UMX1N 150 (TOTAL) ∗1
PC mW
dissipation IMX1 300 (TOTAL) ∗2
Junction temperature Tj 150 ˚C
Storage temperature Tstg −55∼+150 ˚C
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.

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 EMX1 / UMX1N / IMX1
Transistors

!Electrical characteristics (Ta = 25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO 60 − − V IC=50µA
Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA
Emitter-base breakdown voltage BVEBO 7 − − V IE=50µA
Collector cutoff current ICBO − − 0.1 µA VCB=60V
Emitter cutoff current IEBO − − 0.1 µA VEB=7V
Collector-emitter saturation voltage VCE (sat) − − 0.4 V IC/IB=50mA/5mA
DC current transfer ratio hFE 120 − 560 − VCE=6V, IC=1mA
Transition frequency fT − 180 − MHz VCE=12V, IE=−2mA, f=100MHz ∗
Output capacitance Cob − 2 3.5 PF VCB=12V, IE=0A, f=1MHz

!Packaging specifications
Package Taping
Code T2R TN T110
Basic ordering
Type unit (pieces) 8000 3000 3000

EMX1
UMX1N
IMX1

!Electrical characteristic curves

50 0.50mA 10
100 30µA
VCE=6V Ta=25˚C mA Ta=25˚C
0.45mA
COLLECTOR CURRENT : IC (mA)

0.40 27µA
COLLECTOR CURRENT : IC (mA)

COLLECTOR CURRENT : IC (mA)

20
0.35mA 8 24µA
80
10 0.30mA 21µA
5 0.25mA
60 6 18µA
Ta=100˚C
25˚C
−55˚C

0.20mA 15µA
2
0.15mA 4 12µA
1 40
9µA
0.10mA
0.5 6µA
20 2
0.05mA
0.2 3µA

0 IB=0A IB=0A
0.1 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0.4 0.8 1.2 1.6 2.0 0 4 8 12 16 20

BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.1 Grounded emitter propagation Fig.2 Grounded emitter output Fig.3 Grounded emitter output
characteristics characteristics ( I ) characteristics ( II )

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 EMX1 / UMX1N / IMX1
Transistors

COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)

500 500
Ta=25˚C VCE=5V 0.5 Ta=25˚C
Ta=100˚C

25˚C

DC CURRENT GAIN : hFE

DC CURRENT GAIN : hFE

200 VCE=5V 200 0.2

3V −55˚C
1V
100 100 0.1
IC/IB=50

50 50 0.05 20
10

20 20 0.02

10 10 0.01
0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100 200

COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA)

Fig.4 DC current gain vs. collector Fig.5 DC current gain vs. collector Fig.6 Collector-emitter saturation
current ( I ) current ( II ) voltage vs. collector current
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)

0.5 0.5
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)

COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)

0.5 IC/IB=10 IC/IB=50
Ta=25˚C

0.2 Ta=100˚C
0.2 0.2
25˚C
IC/IB=50 Ta=100˚C −55˚C
20 0.1 0.1
0.1 25˚C
10 −55˚C
0.05 0.05
0.05

0.02
0.02 0.02

0.01 0.01
0.01
0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100
0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)

Fig.8 Collector-emitter saturation Fig.9 Collector-emitter saturation

Fig.7 Collector-emitter saturation
voltage vs. collector current ( II ) voltage vs. collector current ( III )
voltage vs. collector current ( I )
BASE COLLECTOR TIME CONSTANT : Cc rbb' (ps)

Ta=25˚C 20 Ta=25˚C
: Cib (pF)
TRANSITION FREQUENCY : fT (MHz)

Ta=25˚C
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

VCE=6V 200 f=32MHZ

500 f=1MHz VCB=6V
IE=0A
10 Cib IC=0A
100
EMITTER INPUT CAPACITANCE

200 5
50

100 2 20
Co
b

1 10
50
−0.5 −1 −2 −5 −10 −20 −50 −100 0.2 0.5 1 2 5 10 20 50 −0.2 −0.5 −1 −2 −5 −10

EMITTER CURRENT : IE (mA) EMITTER CURRENT : IE (mA)

COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.10 Gain bandwidth product vs. Fig.11 Collector output capacitance vs. Fig.12 Base-collector time constant vs.
emitter current collector-base voltage emitter current
Emitter input capacitance vs.
emitter-base voltage

3/3
Appendix

Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
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About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.0