Electronics I

Electronics-I EE 231
EE-231

Chapter#1
Ch t #1

Semiconductor Diodes

Course Instructor:
Muhammad Sohail

Faculty of Electronic Engineering

Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi,
Pakistan
 Outline
★ Introduction
★ Semiconductor Materials: Ge, Si, and GaAs
★ Covalent
C l tB Bonding
di and d IIntrinsic
t i i M Materials
t i l
★ Energy level
★ Extrinsic Materials: n-Type and p-Type Materials
★ Semiconductor Diode
★ Ideal versus practical
★ Resistance levels
★ Diode Equivalent
q Circuits
★ Tansition and Diffusion Capacitance
★ Reverse Recorvery Time
★ Diode Specification Sheets
★ Semeconductor Diode Notation
★ Diode Testing
★ Zener Diodes
★ Light-Emitting Diodes
 Atomic structure

32 orbiting electrons 14 orbiting electrons

(tetravalent) (Tetravalent)
 Atomic structure

31 orbiting electrons 33 orbiting electrons

(trivalent) (pentavalent)
 Covalent bonding

Covalent bonding of Si crystal Covalent bonding of GaAs crystal

This bonding of atoms, strengthened by the sharing of

electrons, is called covalent bonding
 Intrinsic carriers
Semiconductor Intrinsic carriers/cm3

GaAs 1.7 X 106

Si 1.5 X 1010

Ge 2.5 X 1013

Relative mobility µn
Semiconductor µn (cm2/V-s)
Si 1500

Ge 3900

GaAs 8500

Semiconductor materials have negative temperature coefficient.

ENERGY LEVELS
 Extrinsic materials
• A semiconductor material that has been subjected to
the doping process is called an extrinsic material
material.

• Doping
p g involves in addingg dopant
p atoms to an intrinsic semiconductor.
• n-type materials: Doping Si with a Group V element, providing extra
electrons (n for negative) and moving the Fermi level up.
• pp-type
yp materials: Doping
p g Si with a Groupp III element,, providing
p g extra
holes (p for positive) and moving the Fermi level down.
 Dopant
• Group V (n-type) –usually antimony(Sb),
arsenic(A),
i (A) phosphorus(P)
h h (P)
• Group III (p-type)-usually Boron(B) ,
Gallium (Ga) and Indium (In)
 n-Type Material

Diffused impurities
with five valence
electron are called
donor atoms

Antimony impurity in n-type material.

Effect of donor impurities on the energy band structure.
 p-Type Material
Diffused impurities
with three valence
electron
l t are called
ll d
acceptor atoms

Boron impurity in p-type material.