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IRF200P222

IR MOSFET - StrongIRFET™
  D VDSS 200V

Applications RDS(on) typ. 5.3m


G
 UPS and Inverter applications max 6.6m
 Half-bridge and full-bridge topologies S
ID 182A
 Resonant mode power supplies
 DC/DC and AC/DC converters
D
 OR-ing and redundant power switches
 Brushed and BLDC Motor drive applications
 Battery powered circuits
S
G D
TO-247AC
Benefits IRF200P222

 Improved Gate, Avalanche and Dynamic dv/dt Ruggedness


 Fully Characterized Capacitance and Avalanche SOA G D S
 Enhanced body diode dv/dt and di/dt Capability Gate Drain Source
 Lead-Free; RoHS Compliant; Halogen-Free

Standard Pack
Base part number Package Type Orderable Part Number
Form Quantity
IRF200P222 TO-247AC Tube 25 IRF200P222

 
20 200
RDS(on) , Drain-to -Source On Resistance (m)

18 ID = 82A 180

16 160

140
ID , Drain Current (A)

14
120
12
TJ = 125°C 100
10
80
8
60
6 TJ = 25°C
40

4 20

2 0
2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175
TC , Case Temperature (°C)
VGS, Gate -to -Source Voltage (V)

Figure 1 Typical On-Resistance vs. Gate Voltage Figure 2 Maximum Drain Current vs. Case Temperature

Final Datasheet Please read the important Notice and Warnings at the end of this document V1.0
www.infineon.com 2017-03-10
IR MOSFET-StrongIRFET™
IRF200P222
Table of Contents

Table of Contents
Applications …..………………………………………………………………………...……………..……………1
Benefits …..………………………………………………………………………...……………..…………….1
Ordering Table ….……………………………………………………………………………………………………1
Table of Contents ….………………………………………………………………………………………………...2
1 Parameters ………………………………………………………………………………………………3
2 Maximum ratings, Thermal, and Avalanche characteristics ………………………………………4
3 Electrical characteristics ………………………………………………………………………………5
4 Electrical characteristic diagrams ……………………………………………………………………6
Package Information ………………………………………………………………………………………………14
Qualification Information ……………………………………………………………………………………………15
Revision History …………………………………………………………………………………………..…………16

Final Datasheet 2 V1.0


2017-03-10
IR MOSFET-StrongIRFET™
IRF200P222
Parameters

1 Parameters

Table1 Key performance parameters


Parameter Values Units
VDS 200 V
RDS(on) max  6.6 m
ID 182 A

Final Datasheet 3 V1.0


2017-03-10
IR MOSFET-StrongIRFET™
IRF200P222
Maximum ratings and thermal characteristics

2 Maximum ratings and thermal characteristics

Table 2 Maximum ratings (at TJ=25°C, unless otherwise specified)


Parameter Symbol Conditions Values Unit
Continuous Drain Current ID TC = 25°C, VGS @ 10V 182
Continuous Drain Current ID TC = 100°C, VGS @ 10V 129 A
Pulsed Drain Current  IDM TC = 25°C 728
Maximum Power Dissipation PD TC = 25°C 556 W
Linear Derating Factor TC = 25°C 3.7 W/°C
Gate-to-Source Voltage VGS - ± 20 V
Operating Junction and TJ
- -55 to + 175
Storage Temperature Range TSTG
Soldering Temperature, for 10 seconds °C
- - 300
(1.6mm from case)
Mounting Torque, 6-32 or M3 Screw - - 10 lbf·in (1.1 N·m) -

Table 3 Thermal characteristics


Parameter Symbol Conditions Min. Typ. Max. Unit
Junction-to-Case  RJC TJ approximately 90°C - - 0.27
Case-to-Sink, Flat Greased Surface RCS - - 0.24 - °C/W
Junction-to-Ambient RJA - - - 40

Table 4 Avalanche characteristics


Parameter Symbol Values Unit
Single Pulse Avalanche Energy  EAS (Thermally limited) 810
mJ  
Single Pulse Avalanche Energy  EAS (Thermally limited) 1070
Avalanche Current  IAR A
See Fig 16, 17, 23a, 23b
Repetitive Avalanche Energy  EAR mJ

Notes:
Repetitive rating; pulse width limited by max. junction temperature.
 Limited by TJmax, starting TJ = 25°C, L = 0.24mH, RG = 50, IAS = 82A, VGS =10V.
ISD  82A, di/dt  2290A/µs, VDD V(BR)DSS, TJ  175°C.
Pulse width  400µs; duty cycle  2%.
 Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
 Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
 R is measured at TJ approximately 90°C.
 Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 46A, VGS =10V.

Final Datasheet 4 V1.0


2017-03-10
IR MOSFET-StrongIRFET™
IRF200P222
Electrical characteristics

3 Electrical characteristics
Table 5 Static characteristics
Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 1mA 200 - - V
Breakdown Voltage Temp. Coefficient V(BR)DSS/TJ Reference to 25°C, ID = 2mA  - 0.1 - V/°C
Static Drain-to-Source On-Resistance RDS(on) VGS = 10V, ID = 82A - 5.3 6.6 m
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 270µA 2.0 - 4.0 V
VDS = 160V, VGS = 0V - - 1.0
Drain-to-Source Leakage Current IDSS µA
VDS = 160V,VGS = 0V,TJ =125°C - - 100
Gate-to-Source Forward Leakage IGSS VGS = 20V - - 100 nA 
Gate Resistance RG - 1.3 - 

Table 6 Dynamic characteristics


Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
Forward Trans conductance gfs VDS = 50V, ID = 82A 142 - - S
Total Gate Charge Qg - 135 203
Gate-to-Source Charge Qgs ID = 82A - 49 -
VDS = 100V nC
Gate-to-Drain Charge Qgd VGS = 10V - 26 -
Total Gate Charge Sync. (Qg– Qgd) Qsync - 109 -
Turn-On Delay Time td(on) VDD = 130V - 25 -
Rise Time tr ID = 82A - 96 -
ns
Turn-Off Delay Time td(off) RG = 2.7 - 77 -
Fall Time tf VGS = 10V   - 97 -
Input Capacitance Ciss VGS = 0V - 9820 -
Output Capacitance Coss VDS = 50V - 1240 -
Reverse Transfer Capacitance Crss ƒ = 1.0MHz, See Fig.7 - 6.5 - pF
Effective Output Capacitance Coss eff.(ER) - 1025 -
(Energy Related) VGS = 0V, VDS = 0V to 160V 
Output Capacitance (Time Related) Coss eff.(TR) VGS = 0V, VDS = 0V to 160V  - 1540 -

Table 7 Reverse Diode


Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
Continuous Source Current MOSFET symbol D

IS - - 182
(Body Diode) showing the
G A
Pulsed Source Current integral reverse
ISM - - 728
(Body Diode)  p-n junction diode.
S

Diode Forward Voltage VSD TJ = 25°C, IS = 82A,VGS = 0V  - - 1.2 V


Peak Diode Recovery dv/dt  dv/dt TJ = 175°C, IS = 82A,VDS = 200V - 12.3 - V/ns
TJ = 25°C VDD = 170V - 125 -
Reverse Recovery Time trr ns
TJ = 125°C  IF = 82A, - 180 -
TJ = 25°C di/dt = 100A/µs  - 390 -
Reverse Recovery Charge Qrr nC
TJ = 125°C  - 820 -
Reverse Recovery Current IRRM TJ = 25°C - 4.8 - A

Final Datasheet 5 V1.0


2017-03-10
IR MOSFET-StrongIRFET™
IRF200P222
Electrical characteristic diagrams

4 Electrical characteristic diagrams


 
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
7.0V 7.0V

ID , Drain-to-Source Current (A)


ID , Drain-to-Source Current (A)

6.0V 6.0V
5.5V 5.5V
100 5.0V 100 5.0V
4.5V 4.5V
BOTTOM 4.0V BOTTOM 4.0V
4.0V

10 10

4.0V

 60µs PULSE WIDTH  60µs PULSE WIDTH


Tj = 25°C Tj = 175°C
1 1
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Figure 3 Typical Output Characteristics Figure 4 Typical Output Characteristics

 
1000 3.0
ID = 82A
RDS(on) , Drain-to-Source On Resistance

2.5 VGS = 10V


ID , Drain-to-Source Current (A)

100 2.0
(Normalized)

TJ = 175°C 1.5
TJ = 25°C

10 1.0

VDS = 50V 0.5


 60µs PULSE WIDTH
1 0.0
2 3 4 5 6 7 8 -60 -20 20 60 100 140 180
VGS , Gate-to-Source Voltage (V) T J , Junction Temperature (°C)

Figure 5 Typical Transfer Characteristics Figure 6 Normalized On-Resistance vs. Temperature

Final Datasheet 6 V1.0


2017-03-10
IR MOSFET-StrongIRFET™
IRF200P222
Electrical characteristic diagrams

 
1E+006 14
VGS = 0V, f = 1 MHZ
ID = 82A
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd 12
100000 VDS = 160V

VGS , Gate-to-Source Voltage (V)


Coss = Cds + Cgd VDS = 100V
10
Ciss VDS= 40V
C, Capacitance (pF)

10000

Coss 8
1000
6

100
4
Crss
10 2

1 0
1 10 100 1000 0 20 40 60 80 100 120 140 160 180
VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC)

Figure 7 Typical Capacitance vs. Drain-to-Source Figure 8 Typical Gate Charge vs. Gate-to-Source
Voltage Voltage

 
1000
ISD , Reverse Drain Current (A)

100

T J = 175°C TJ = 25°C
10

VGS = 0V

0.1
0.0 0.4 0.8 1.2 1.6 2.0
VSD , Source-to-Drain Voltage (V)

Figure 9 Typical Source-Drain Diode Forward

Final Datasheet 7 V1.0


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IR MOSFET-StrongIRFET™
IRF200P222

1000

100µsec
100
ID , Drain-to-Source Current (A)

1msec

10
OPERATION IN THIS AREA
LIMITED BY R DS (on) 10msec
1

DC
0.1 Tc = 25°C
Tj = 175°C
Single Pulse
0.01
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)

Figure 10 Maximum Safe Operating Area

 
235 20
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)

Id = 2.0mA 18

16
225
14

12
Energy (µJ)

215 10

6
205
4

195 0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 180 200 220

TJ , Temperature ( °C ) VDS, Drain-to-Source Voltage (V)

Figure 11 Drain-to-Source Breakdown Voltage Figure 12 Typical Coss Stored Energy

Final Datasheet 8 V1.0


2017-03-10
IR MOSFET-StrongIRFET™
IRF200P222
Electrical characteristic diagrams

 
7.0 4.5
RDS (on), Drain-to -Source On Resistance (m)

VGS = 6.0V
VGS = 7.0V 4.0

VGS(th) , Gate threshold Voltage (V)


VGS = 8.0V
6.5 VGS = 10V 3.5

3.0
6.0
2.5

2.0 ID = 270µA
5.5
ID = 1.0mA
1.5 ID = 1.0A

5.0 1.0
0 25 50 75 100 125 150 175 200 -75 -50 -25 0 25 50 75 100 125 150 175
ID , Drain Current (A) TJ , Temperature ( °C )

Figure 13 Typical On-Resistance vs. Drain Figure 14 Threshold Voltage vs. Temperature
Current

 
1
Thermal Response ( Z thJC ) °C/W

D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01

0.001
SINGLE PULSE Notes:
( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1
t 1 , Rectangular Pulse Duration (sec)

Figure 15 Maximum Effective Transient Thermal Impedance, Junction-to-Case

Final Datasheet 9 V1.0


2017-03-10
IR MOSFET-StrongIRFET™
IRF200P222
Electrical characteristic diagrams

 
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming  Tj = 150°C and
Tstart =25°C (Single Pulse)
100
Avalanche Current (A)

10

1
Allowed avalanche Current vs
avalanche pulsewidth, tav, assuming
 Tj = 25°C and Tstart = 150°C.
0.1
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)

Figure 16 Avalanche Current vs. Pulse Width

  Notes on Repetitive Avalanche Curves , Figures 16, 17:


(For further info, see AN-1005 at www.infineon.com)
900
1.Avalanche failures assumption:
TOP Single Pulse Purely a thermal phenomenon and failure occurs at a
800 BOTTOM 1.0% Duty Cycle temperature far in excess of Tjmax. This is validated for every
ID = 82A part type.
700 2. Safe operation in Avalanche is allowed as long asTjmax is not
E AR , Avalanche Energy (mJ)

exceeded.
600 3. Equation below based on circuit and waveforms shown in
Figures 23a, 23b.
500 4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
400
6. Iav = Allowable avalanche current.
7. DT = Allowable rise in junction temperature, not to exceed Tjmax
300 (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
200 D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 14)
100 PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
0 EAS (AR) = PD (ave)·tav
25 50 75 100 125 150 175
Starting T J , Junction Temperature (°C)

Figure 17 Maximum Avalanche Energy vs.


Temperature

Final Datasheet 10
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IR MOSFET-StrongIRFET™
IRF200P222
Electrical characteristic diagrams

 
60 60
IF = 55A IF = 82A
50 VR = 170V VR = 170V
50
TJ = 25°C TJ = 25°C
TJ = 125°C TJ = 125°C
40 40
IRRM (A)

IRRM (A)
30 30

20 20

10 10

0 0
100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000
di F /dt (A/µs) di F /dt (A/µs)

Figure 18 Typical Recovery Current vs. dif/dt Figure 19 Typical Recovery Current vs. dif/dt

 
3500 4000
IF = 55A IF = 82A
3000 3500
VR = 170V VR = 170V
TJ = 25°C 3000 TJ = 25°C
2500 TJ = 125°C TJ = 125°C
2500
2000
QRR (nC)

QRR (nC)

2000
1500
1500
1000
1000

500 500

0 0
100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000
di F /dt (A/µs) di F /dt (A/µs)

Figure 20 Typical Stored Charge vs. dif/dt Figure 21 Typical Stored Charge vs. dif/dt

Final Datasheet 11
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IR MOSFET-StrongIRFET™
IRF200P222
Electrical characteristic diagrams

Figure 22 Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET™ Power MOSFETs

Figure 23a Unclamped Inductive Test Circuit Figure 23b Unclamped Inductive Waveforms

Final Datasheet 12
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IRF200P222
Electrical characteristic diagrams

Figure 24a Switching Time Test Circuit Figure 24b Switching Time Waveforms

Figure 25a Gate Charge Test Circuit Figure 25b Gate Charge Waveform

Final Datasheet 13
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IR MOSFET-StrongIRFET™
IRF200P222
Package Information

5 Package Information

TO-247AC Package Outline (Dimensions are shown in millimeters (inches))

TO-247AC Part Marking Information

EXAMPLE: THIS IS AN IRFPE30


WITH ASSEMBLY PART NUMBER
LOT CODE 5657 INTERNATIONAL
ASSEMBLED ON WW 35, 2001 RECTIFIER IRFPE30

IN THE ASSEMBLY LINE "H" LOGO 135H


56 57
DATE CODE
ASSEMBLY YEAR 1 = 2001
Note: "P" in assembly line position
indicates "Lead-Free" LOT CODE WEEK 35
LINE H

TO-247AC package is not recommended for Surface Mount Application.

Final Datasheet 14
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IR MOSFET-StrongIRFET™
IRF200P222
Qualification Information

6 Qualification Information

Qualification Information 
Industrial
Qualification Level   (per JEDEC JESD47F) †

Moisture Sensitivity Level TO-247AC N/A


RoHS Compliant Yes

† Applicable version of JEDEC standard at the time of product release.

Final Datasheet 15
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IR MOSFET-StrongIRFET™
IRF200P222
Revision History

Revision History
Major changes since the last revision
Revision
Page or Reference Date Description of changes

All pages 1.0 2017-03-10  First release data sheet.

Final Datasheet 16
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IR MOSFET-StrongIRFET™
IRF200P222

Trademarks of Infineon Technologies AG


µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™,
DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™,
HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™,
OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™,
SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™

Trademarks updated November 2015

Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.

IMPORTANT NOTICE
For further information on the product, technology,
Edition 2015-05-06 The information given in this document shall in no delivery terms and conditions and prices please
Published by event be regarded as a guarantee of conditions or contact your nearest Infineon Technologies office
Infineon Technologies AG characteristics (“Beschaffenheitsgarantie”) . (www.infineon.com).
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   With respect to any examples, hints or any typical
values stated herein and/or any information WARNINGS
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All Rights Reserved. Technologies hereby disclaims any and all Due to technical requirements products may contain
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Email: erratum@infineon.com
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obligations stated in this document and any
applicable legal requirements, norms and standards Infineon Technologies’ products may not be used in
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applications. be expected to result in personal injury.

The data contained in this document is exclusively


intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
Final Datasheet 17
2017-03-10
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