IPW60R041P6
1Description TO-247
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe
experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.
TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET
whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction
lossesmakeswitchingapplicationsevenmoreefficient,morecompact,
lighterandcooler.
Features
•IncreasedMOSFETdv/dtruggedness
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss Drain
•Veryhighcommutationruggedness Pin 2
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 Gate
Pin 1
andJESD22)
Source
Pin 3
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom
andUPS.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter Value Unit
VDS @ Tj,max 650 V
RDS(on),max 41 mΩ
Qg.typ 170 nC
ID,pulse 267 A
Eoss@400V 20.5 µJ
Body diode di/dt 300 A/µs
IPW60R041P6
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 77.5 TC=25°C
Continuous drain current 1) ID A
- - 49.0 TC=100°C
Pulsed drain current 2) ID,pulse - - 267 A TC=25°C
Avalanche energy, single pulse EAS - - 1954 mJ ID=13.4A; VDD=50V; see table 10
Avalanche energy, repetitive EAR - - 2.96 mJ ID=13.4A; VDD=50V; see table 10
Avalanche current, repetitive IAR - - 13.4 A -
MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400V
Gate source voltage (static) VGS -20 - 20 V static;
Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)
Power dissipation (Non FullPAK)
Ptot - - 481 W TC=25°C
TO-247
Storage temperature Tstg -55 - 150 °C -
Operating junction temperature Tj -55 - 150 °C -
Mounting torque (Non FullPAK)
- - - 60 Ncm M3 and M3.5 screws
TO-247
Continuous diode forward current IS - - 67.2 A TC=25°C
Diode pulse current 2)
IS,pulse - - 267 A TC=25°C
VDS=0...400V,ISD<=IS,Tj=25°C
Reverse diode dv/dt 3) dv/dt - - 15 V/ns
see table 8
VDS=0...400V,ISD<=IS,Tj=25°C
Maximum diode commutation speed dif/dt - - 300 A/µs
see table 8
1)
Limited by Tj max. Maximum duty cycle D=0.75
2)
Pulse width tp limited by Tj,max
3)
IdenticallowsideandhighsideswitchwithidenticalRG
Final Data Sheet 4 Rev.2.0,2014-03-07
600VCoolMOS™P6PowerTransistor
IPW60R041P6
3Thermalcharacteristics
Table3Thermalcharacteristics(NonFullPAK)TO-247
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - case RthJC - - 0.26 °C/W -
Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded
Soldering temperature, wavesoldering
Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s
only allowed at leads
IPW60R041P6
4Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA
Gate threshold voltage V(GS)th 3.5 4.0 4.5 V VDS=VGS,ID=2.96mA
- - 5 VDS=600,VGS=0V,Tj=25°C
Zero gate voltage drain current IDSS µA
- 10 - VDS=600,VGS=0V,Tj=150°C
Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V
- 0.037 0.041 VGS=10V,ID=35.5A,Tj=25°C
Drain-source on-state resistance RDS(on) Ω
- 0.096 - VGS=10V,ID=35.5A,Tj=150°C
Gate resistance RG - 1 - Ω f=1MHz,opendrain
Table5Dynamiccharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance Ciss - 8180 - pF VGS=0V,VDS=100V,f=1MHz
Output capacitance Coss - 310 - pF VGS=0V,VDS=100V,f=1MHz
Effective output capacitance,
Co(er) - 260 - pF VGS=0V,VDS=0...400V
energy related 1)
Effective output capacitance,
Co(tr) - 1200 - pF ID=constant,VGS=0V,VDS=0...400V
time related 2)
VDD=400V,VGS=13V,ID=44.4A,
Turn-on delay time td(on) - 29 - ns
RG=1.7Ω;seetable9
VDD=400V,VGS=13V,ID=44.4A,
Rise time tr - 27 - ns
RG=1.7Ω;seetable9
VDD=400V,VGS=13V,ID=44.4A,
Turn-off delay time td(off) - 90 - ns
RG=1.7Ω;seetable9
VDD=400V,VGS=13V,ID=44.4A,
Fall time tf - 5 - ns
RG=1.7Ω;seetable9
Table6Gatechargecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate to source charge Qgs - 50 - nC VDD=400V,ID=44.4A,VGS=0to10V
Gate to drain charge Qgd - 59 - nC VDD=400V,ID=44.4A,VGS=0to10V
Gate charge total Qg - 170 - nC VDD=400V,ID=44.4A,VGS=0to10V
Gate plateau voltage Vplateau - 6.1 - V VDD=400V,ID=44.4A,VGS=0to10V
1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
2)
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
Final Data Sheet 6 Rev.2.0,2014-03-07
600VCoolMOS™P6PowerTransistor
IPW60R041P6
Table7Reversediodecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode forward voltage VSD - 0.9 - V VGS=0V,IF=44.4A,Tj=25°C
VR=400V,IF=44.4A,diF/dt=100A/µs;
Reverse recovery time trr - 630 - ns
see table 8
VR=400V,IF=44.4A,diF/dt=100A/µs;
Reverse recovery charge Qrr - 19 - µC
see table 8
VR=400V,IF=44.4A,diF/dt=100A/µs;
Peak reverse recovery current Irrm - 56 - A
see table 8
IPW60R041P6
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation Diagram2:Safeoperatingarea
500 103
1 µs
450
10 µs
102
400 100 µs
350 1 ms
101
300 10 ms
Ptot[W]
ID[A]
250 100
200 DC
10-1
150
100
10-2
50
0 10-3
0 25 50 75 100 125 150 100 101 102 103
TC[°C] VDS[V]
Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
3
10 100
1 µs
2
10 10 µs
100 µs 0.5
101 1 ms 10-1
0.2
10 ms
ZthJC[K/W]
0.1
ID[A]
100
DC 0.05
0.02
10-1 10-2
0.01
single pulse
10-2
10-3 10-3
100 101 102 103 10-5 10-4 10-3 10-2 10-1 100
VDS[V] tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp ZthJC=f(tP);parameter:D=tp/T
IPW60R041P6
Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics
280 170
20 V 160 20 V
10 V 10 V
150
240 8V
140
130
200 120
8V
110 7V
160 100
90
ID[A]
ID[A]
80
7V
120 70 6V
60
80 50
40
5.5 V
6V 30
40
20 5V
5.5 V
10
4.5 V 5V 4.5 V
0 0
0 5 10 15 20 0 5 10 15 20
VDS[V] VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance
0.15 0.12
0.14 0.11
0.10
0.13
0.09
0.12
0.08
0.11 5.5 V 6V 0.07
6.5 V
RDS(on)[Ω]
RDS(on)[Ω]
7V
0.10 0.06
10 V
98% typ
0.09 0.05
20 V
0.04
0.08
0.03
0.07
0.02
0.06 0.01
0.05 0.00
0 10 20 30 40 50 60 70 80 -50 -25 0 25 50 75 100 125 150
ID[A] Tj[°C]
RDS(on)=f(ID);Tj=125°C;parameter:VGS RDS(on)=f(Tj);ID=35.5A;VGS=10V
IPW60R041P6
Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge
300 10
9
250 25 °C
8
120 V 480 V
7
200
6
VGS[V]
ID[A]
150 5
150 °C
4
100
3
2
50
1
0 0
0 2 4 6 8 10 12 14 0 50 100 150 200
VGS[V] Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=44.4Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy
2
10 2000
1800
1600
1400
101
1200
EAS[mJ]
125 °C 25 °C
IF[A]
1000
800
100
600
400
200
10-1 0
0.0 0.5 1.0 1.5 2.0 25 50 75 100 125 150
VSD[V] Tj[°C]
IF=f(VSD);parameter:Tj EAS=f(Tj);ID=13.4A;VDD=50V
IPW60R041P6
Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances
700 105
680
Ciss
104
660
640
103
620
VBR(DSS)[V]
C[pF]
Coss
600
102
580
Crss
560
101
540
520 100
-75 -50 -25 0 25 50 75 100 125 150 175 0 100 200 300 400 500
Tj[°C] VDS[V]
VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=1MHz
Diagram15:Typ.Cossstoredenergy
28
26
24
22
20
18
16
Eoss[µJ]
14
12
10
8
6
4
2
0
0 100 200 300 400 500
VDS[V]
Eoss=f(VDS)
IPW60R041P6
6TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform
V ,I
Rg1 VDS( peak)
VDS
VDS
VDS IF
trr
tF tS
Rg 2 dIF / dt
IF t
QF QS 10 %Irrm
IF dIrr / dt trr =tF +tS
Irrm Qrr = QF + QS
Rg1 = Rg 2
Table9Switchingtimes
Switching times test circuit for inductive load Switching times waveform
VDS
90%
VDS
VGS 10%
VGS
td(on) tr td(off) tf
ton toff
Table10Unclampedinductiveload
Unclamped inductive load test circuit Unclamped inductive waveform
V(BR)DS
ID VDS VD
VDS VDS
ID
IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131101a
Fast Diode
80 0.8 20
TVJ = 125°C
80 A
TVJ = 125°C 80 A
70 VR = 270 V
0.7 VR = 270 V 40 A
40 A 20 A
60 16
0.6
50 Qrr 20 A IRM
IF
40 0.5 12
TVJ = 150°C [μC]
[A] 30 [A]
0.4
20 8
25°C 0.3
10
0.2 4
0.0 0.4 0.8 1.2 1.6 2.0 0 200 400 600 0 200 400 600
VF [V] -diF /dt [A/μs] -diF /dt [A/μs]
Fig. 1 Forward current Fig. 2 Typ. reverse recov. charge Fig. 3 Typ. reverse recov. current
IF versus VF Qrr versus -diF /dt IRM versus -diF /dt
25 0.8
20
0.6
IF = 80 A
15 40 A ZthJC
Erec 20 A 0.4
10 [K/W]
[μJ]
0.2
5
TVJ = 125°C
VR = 270 V
0 0.0
0 200 400 600 1 10 100 1000 10000
-diF /dt [A/μs] t [ms]
Fig. 7 Typ. recovery energy Fig. 8 Transient thermal impedance junction to case
Erec versus -diF /dt
IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131101a
Series/Type: B82747S6313N061
Date: July 2012
a~í~=pÜÉÉí
© EPCOS AG 2015. Reproduction, publication and dissemination of this publication, enclosures hereto and the
information contained therein without EPCOS' prior express consent is prohibited.
Construction
■ Current-compensated ring core triple choke
■ Ferrite core
■ Polycarbonate base plate (UL 94 V-0)
■ Polyamide spacer (UL 94 V-0)
■ Choke fixed with PU compound (UL 94 V-0)
■ Sector winding
■ Clearance 3 mm, creepage distance 4 mm
Features
■ Approx. 0.5% stray inductance
for symmetrical interference suppression
■ Suitable for wave soldering
■ Design complies with EN 60938-2 (VDE 0565-2)
■ RoHS-compatible
Applications
■ Suppression of common-mode interferences
■ Switch-mode applications
Terminals
■ Ends of winding wires
■ Hot-dip tinned
Marking
Manufacturer, ordering code, rated current,
rated voltage, rated inductance,
date of manufacture (MM.YY)
Delivery mode
Cardboard box
3.5±0.5 35 max.
120˚
˚
0
12
ø1
ø64 max.
2
ø2.8±0.1 6x
˚
18
1 4
5 6
120˚
20
2 5
1
IND0679-R-E 4 3 3 6
18 ˚
ø5
9
Dimensions in mm Marking
120
˚ IND0769-F-E
104
0.8
0.6
103
0.4
102
0.2
101 4 0
10 10 5 10 6 Hz 10 7 0 20 40 60 80 100 ˚C 140
f TA
■ Please note the recommendations in our Inductors data book (latest edition) and in the data
sheets.
– Particular attention should be paid to the derating curves given there. Derating must be applied
in case the ambient temperature in the application exceeds the rated temperature of the
component.
– Ensure the operation temperature (which is the sum of the ambient temperature and the
temperature rise caused by losses / self-heating) of the component in the application does not
exceed the maximum value specified in the climatic category.
– The soldering conditions should also be observed. Temperatures quoted in relation to wave
soldering refer to the pin, not the housing.
■ If the components are to be washed varnished it is necessary to check whether the washing
varnish agent that is used has a negative effect on the wire insulation, any plastics that are used,
or on glued joints. In particular, it is possible for washing varnish agent residues to have a
negative effect in the long-term on wire insulation.
Washing processes may damage the product due to the possible static or cyclic mechanical
loads (e.g. ultrasonic cleaning). They may cause cracks to develop on the product and its parts,
which might lead to reduced reliability or lifetime.
■ The following points must be observed if the components are potted in customer applications:
– Many potting materials shrink as they harden. They therefore exert a pressure on the plastic
housing or core. This pressure can have a deleterious effect on electrical properties, and in
extreme cases can damage the core or plastic housing mechanically.
– It is necessary to check whether the potting material used attacks or destroys the wire
insulation, plastics or glue.
– The effect of the potting material can change the high-frequency behaviour of the components.
■ Ferrites are sensitive to direct impact. This can cause the core material to flake, or lead to
breakage of the core.
■ Even for customer-specific products, conclusive validation of the component in the circuit can
only be carried out by the customer.
1. Some parts of this publication contain statements about the suitability of our products for
certain areas of application. These statements are based on our knowledge of typical
requirements that are often placed on our products in the areas of application concerned. We
nevertheless expressly point out that such statements cannot be regarded as binding
statements about the suitability of our products for a particular customer application. As
a rule, EPCOS is either unfamiliar with individual customer applications or less familiar with them
than the customers themselves. For these reasons, it is always ultimately incumbent on the
customer to check and decide whether an EPCOS product with the properties described in the
product specification is suitable for use in a particular customer application.
4. In order to satisfy certain technical requirements, some of the products described in this
publication may contain substances subject to restrictions in certain jurisdictions (e.g.
because they are classed as hazardous). Useful information on this will be found in our
Material Data Sheets on the Internet (www.epcos.com/material). Should you have any more
detailed questions, please contact our sales offices.
5. We constantly strive to improve our products. Consequently, the products described in this
publication may change from time to time. The same is true of the corresponding product
specifications. Please check therefore to what extent product descriptions and specifications
contained in this publication are still applicable before or when you place an order.
6. Unless otherwise agreed in individual contracts, all orders are subject to the current version
of the “General Terms of Delivery for Products and Services in the Electrical Industry”
published by the German Electrical and Electronics Industry Association (ZVEI).
7. The trade names EPCOS, BAOKE, Alu-X, CeraDiode, CeraLink, CSMP, CSSP, CTVS,
DeltaCap, DigiSiMic, DSSP, FilterCap, FormFit, MiniBlue, MiniCell, MKD, MKK, MLSC,
MotorCap, PCC, PhaseCap, PhaseCube, PhaseMod, PhiCap, SIFERRIT, SIFI, SIKOREL,
SilverCap, SIMDAD, SiMic, SIMID, SineFormer, SIOV, SIP5D, SIP5K, ThermoFuse, WindCap
are trademarks registered or pending in Europe and in other countries. Further information will
be found on the Internet at www.epcos.com/trademarks.
6 07/12
Mouser Electronics
Authorized Distributor
EPCOS:
B82747S6313N061
606PHC250KS
HIGH FREQUENCY/ SWITCHING
Parts are RoHS compliant
APPLICATIONS: industrial controls, Motor speed controls, Resonant circuits, induction heaters,
Electronic ballasts, Audio, SMPS
ELECTRICAL SPECIFICATIONS
Capacitance: 60 uF
Dissipation Factor: 0.0015 Max at 1000 Hz and 25°C
Temperature Coefficient: -200 PPM/°C: -100 PPM/°C, 100 PPM/°C
Ripple Current: 14 A at 100 kHz and 70°C
ESR: 3.5 milliOhms (typical) at 100 kHz and 25°C
Self Inductance: 1 Nanohenries maximum per mm of body length and lead length
dvdt: 15 V/µs
Terminal to Terminal Dielectric strength: 2 times the rated DC voltage when applied between the
terminals for 10 seconds
Terminal to case Dielectric strength: 3000 VAC when applied between the terminals and case for 60
seconds
Insulation Resistance (Terminal to Terminal): 30000 MINIMUM after 100 Volts DC is applied for 60
seconds at 20°C
Reliability: 300 failures/billion component hours
Load Life: 100000 hours at 70°C with 100% of rated voltage
Capacitance Change: 0 of initially measured value
D.F. Change: 0 of maximum specified value
I.R. Change: 0 of minimum specified value
650VCoolMOS™C7PowerTransistor
IPZ65R045C7
1Description PG-TO247-4
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.
CoolMOS™C7seriescombinestheexperienceoftheleadingSJ
MOSFETsupplierwithhighclassinnovation.Theproductportfolio
providesallbenefitsoffastswitchingsuperjunctionMOSFETsoffering
betterefficiency,reducedgatecharge,easyimplementationand
outstandingreliability.
Features
•IncreasedMOSFETdv/dtruggedness
•BetterefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg
•BestinclassRDS(on)/package
•Easytouse/driveduetodriversourcepinforbettercontrolofthegate.
•Pb-freeplating,halogenfreemoldcompound
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
Benefits
•Enablinghighersystemefficiency
•Enablinghigherfrequency/increasedpowerdensitysolutions
•Systemcost/sizesavingsduetoreducedcoolingrequirements
•Highersystemreliabilityduetoloweroperatingtemperatures
Applications
PFCstagesandhardswitchingPWMstagesfore.g.Computing,Server,
Telecom,UPSandSolar.
Pleasenote:Thesourceandsensesourcepinsarenotexchangeable.
Theirexchangemightleadtomalfunction.
Table1KeyPerformanceParameters
Parameter Value Unit
VDS @ Tj,max 700 V
RDS(on),max 45 mΩ
Qg.typ 93 nC
ID,pulse 212 A
Eoss@400V 11.7 µJ
Body diode di/dt 60 A/µs
IPZ65R045C7
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 46 TC=25°C
Continuous drain current 1) ID A
- - 29 TC=100°C
Pulsed drain current 2) ID,pulse - - 212 A TC=25°C
Avalanche energy, single pulse EAS - - 249 mJ ID=12A; VDD=50V
Avalanche energy, repetitive EAR - - 1.25 mJ ID=12A; VDD=50V
Avalanche current, single pulse IAS - - 12.0 A -
MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400V
Gate source voltage (static) VGS -20 - 20 V static;
Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)
Power dissipation Ptot - - 227 W TC=25°C
Storage temperature Tstg -55 - 150 °C -
Operating junction temperature Tj -55 - 150 °C -
Mounting torque - - - 60 Ncm M3 and M3.5 screws
Continuous diode forward current IS - - 46 A TC=25°C
Diode pulse current2) IS,pulse - - 212 A TC=25°C
Reverse diode dv/dt 3)
dv/dt - - 1.5 V/ns VDS=0...400V,ISD<=IS,Tj=25°C
Maximum diode commutation speed dif/dt - - 60 A/µs VDS=0...400V,ISD<=IS,Tj=25°C
Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min
1)
Limited by Tj max.
2)
Pulse width tp limited by Tj,max
3)
IdenticallowsideandhighsideswitchwithidenticalRG
Final Data Sheet 4 Rev.2.0,2013-04-30
650VCoolMOS™C7PowerTransistor
IPZ65R045C7
3Thermalcharacteristics
Table3Thermalcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - case RthJC - - 0.55 °C/W -
Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded
Thermal resistance, junction - ambient
RthJA - - - °C/W n.a.
for SMD version
Soldering temperature, wavesoldering 1.6mm (0.063 in.) from case for
Tsold - - 260 °C
only allowed at leads 10s
IPZ65R045C7
4Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 650 - - V VGS=0V,ID=1mA
Gate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS,ID=1.25mA
- - 2 VDS=650,VGS=0V,Tj=25°C
Zero gate voltage drain current IDSS µA
- 20 - VDS=650,VGS=0V,Tj=150°C
Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V
- 0.040 0.045 VGS=10V,ID=24.9A,Tj=25°C
Drain-source on-state resistance RDS(on) Ω
- 0.096 - VGS=10V,ID=24.9A,Tj=150°C
Gate resistance RG - 0.85 - Ω f=1MHz,opendrain
Table5Dynamiccharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance Ciss - 4340 - pF VGS=0V,VDS=400V,f=250kHz
Output capacitance Coss - 70 - pF VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energy
Co(er) - 146 - pF VGS=0V,VDS=0...400V
related 1)
Effective output capacitance, time related
Co(tr) - 1630 - pF ID=constant,VGS=0V,VDS=0...400V
2)
VDD=400V,VGS=13V,ID=24.9A,
Turn-on delay time td(on) - 20 - ns
RG=3.3Ω
VDD=400V,VGS=13V,ID=24.9A,
Rise time tr - 14 - ns
RG=3.3Ω
VDD=400V,VGS=13V,ID=24.9A,
Turn-off delay time td(off) - 82 - ns
RG=3.3Ω
VDD=400V,VGS=13V,ID=24.9A,
Fall time tf - 7 - ns
RG=3.3Ω
Table6Gatechargecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate to source charge Qgs - 23 - nC VDD=400V,ID=24.9A,VGS=0to10V
Gate to drain charge Qgd - 30 - nC VDD=400V,ID=24.9A,VGS=0to10V
Gate charge total Qg - 93 - nC VDD=400V,ID=24.9A,VGS=0to10V
Gate plateau voltage Vplateau - 5.4 - V VDD=400V,ID=24.9A,VGS=0to10V
1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
2)
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
Final Data Sheet 6 Rev.2.0,2013-04-30
650VCoolMOS™C7PowerTransistor
IPZ65R045C7
Table7Reversediodecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode forward voltage VSD - 0.9 - V VGS=0V,IF=24.9A,Tj=25°C
Reverse recovery time trr - 725 - ns VR=400V,IF=46A,diF/dt=60A/µs
Reverse recovery charge Qrr - 13 - µC VR=400V,IF=46A,diF/dt=60A/µs
Peak reverse recovery current Irrm - 36 - A VR=400V,IF=46A,diF/dt=60A/µs
IPZ65R045C7
5Electricalcharacteristicsdiagrams
Table8
Diagram1:Powerdissipation Diagram2:Safeoperatingarea
250 103
100 µs 10 µs 1 µs
1 ms
102 10 ms
200
DC
101
150
Ptot[W]
ID[A]
100
100
10-1
50
10-2
0 10-3
0 25 50 75 100 125 150 100 101 102 103
TC[°C] VDS[V]
Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp
Table9
Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
3
10 100
100 µs 10 µs 1 µs
2 1 ms
10
10 ms
0.5
DC
101
ZthJC[K/W]
0.2
ID[A]
0 -1
10 10
0.1
10-1 0.05
0.02
10-2 0.01
single pulse
10-3 10-2
100 101 102 103 10-5 10-4 10-3 10-2 10-1
VDS[V] tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp ZthJC=f(tP);parameter:D=tp/T
IPZ65R045C7
Table10
Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics
250 160
20 V 140 20 V
10 V
200 10 V
8V 8V
120 7V
7V
100
150 6V
ID[A]
ID[A]
80
100
60 5.5 V
6V
40
50 5V
5.5 V
20
5V 4.5 V
4.5 V
0 0
0 5 10 15 20 0 5 10 15 20
VDS[V] VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS
Table11
Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance
0.17 0.12
5.5 V 6V 6.5 V 7V
0.16 0.11
0.15 0.10
20 V
0.14 0.09
10 V
0.13 0.08
RDS(on)[Ω]
RDS(on)[Ω]
0.12 0.07
98%
0.10 0.05
0.09 0.04
0.08 0.03
0.07 0.02
0 20 40 60 80 100 120 140 -50 -25 0 25 50 75 100 125 150
ID[A] Tj[°C]
RDS(on)=f(ID);Tj=125°C;parameter:VGS RDS(on)=f(Tj);ID=24.9A;VGS=10V
IPZ65R045C7
Table12
Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge
250 12
120 V
400 V
25 °C 10
200
8
150
VGS[V]
ID[A]
6
150 °C
100
4
50
2
0 0
0 2 4 6 8 10 12 0 20 40 60 80 100 120
VGS[V] Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=24.9Apulsed;parameter:VDD
Table13
Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy
2
10 250
225
200
125 °C 175
101 25 °C
150
EAS[mJ]
IF[A]
125
100
100
75
50
25
10-1 0
0.0 0.5 1.0 1.5 25 50 75 100 125 150
VSD[V] Tj[°C]
IF=f(VSD);parameter:Tj EAS=f(Tj);ID=12A;VDD=50V
IPZ65R045C7
Table14
Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances
760 105
740
104
720 Ciss
700
103
680
VBR(DSS)[V]
C[pF]
660 Coss
102
640
620
101
Crss
600
580 100
-60 -20 20 60 100 140 180 0 100 200 300 400 500
Tj[°C] VDS[V]
VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=250kHz
Table15
Diagram15:Typ.Cossstoredenergy
16
14
12
10
Eoss[µJ]
0
0 100 200 300 400 500
VDS[V]
Eoss=f(VDS)
IPZ65R045C7
6TestCircuits
Table16Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform
V ,I
Rg1 VDS( peak)
VDS
VDS
VDS IF
trr
tF tS
Rg 2 dIF / dt
IF t
QF QS 10 %Irrm
IF dIrr / dt trr =tF +tS
Irrm Qrr = QF + QS
Rg1 = Rg 2
Table17switchingtimes(ss)
Switching times test circuit for inductive load Switching times waveform
VDS
90%
VDS
VGS 10%
VGS
td(on) tr td(off) tf
ton toff
Table18Unclampedinductiveload(ss)
Unclamped inductive load test circuit Unclamped inductive waveform
V(BR)DS
ID VD
VDS
VDS VDS
ID
Maximum ratings
Thermal characteristics
Thermal resistance,
Thermal resistance,
R thJA junction- ambient, - - 62
junction - ambient
leaded
Static characteristics
AC characteristics
V R=300 V, f =1 MHz - 50 -
V R=600 V, f =1 MHz - 50 -
1)
J-STD20 and JESD22
2)
All devices tested under avalanche conditions, for a time periode of 10ms, at 20mA.
3)
tc is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and
di/dt), different from trr which is dependent on Tj, ILOAD and di/dt. No reverse recovery time constant trr due
to absence of minority carrier injection.
4)
Under worst case Zth conditions.
5)
Only capacitive charge occuring, guaranteed by design.
130 140
120
110 120
100
0.1
90 100
80
80
70
Ptot [W]
IF [A]
60
60 0.3
50
0.5
40
40 0.7
30
1
20
20
10
0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
0.1
TC [°C] TC [°C]
0.3
0.5
0.7
1
20 80
-55 °C
25 °C
100 °C
15 60 -55 °C
150 °C
25 °C
IF [A]
IF [A]
10 40
175 °C
100 °C
5 20 150 °C
175 °C
0 0
0 1 2 3 4 0 2 4 6 8
VF[V] VF [V]
20 101
15 100
Qc[nC]
IR [µA]
10 10-1
175 °C
5 10-2 150 °C
100 °C
25 °C -55°C
0 10-3
100 400 700 1000 100 200 300 400 500 600
101 400
350
100 300
0.5
250
0.2
ZthJC [K/W]
0.1
C [pF]
10-1 200
0.05
0.02
150
0.01
0
10-2 100
50
10-3 0
10-6 10-5 10-4 10-3 10-2 10-1 100 10-1 100 101 102 103
tP [s] VR [V]
10
6
Ec [µJ]
0
0 200 400 600
VR [V]
Benefits
Applications
Solar inverters
Uninterruptable power supplies
Motor drives
Power Factor Correction
Pin 1 – anode 1
Pin 2 and backside – cathode
Pin 3 – anode 2
Maximum ratings
Soldering temperature,
wavesoldering only allowed at leads Tsold 260 °C
1.6mm (0.063 in.) from case for 10 s
Mounting torque
M 0.7 Nm
M3 and M4 screws
Thermal Resistances
Value (leg/device)
Parameter Symbol Conditions Unit
min. typ. max.
Characteristic
Diode thermal resistance,
Rth(j-c) - 0.7/0.35 0.9/0.5 K/W
junction – case
Thermal resistance,
Rth(j-a) leaded - - 62 K/W
junction – ambient
Electrical Characteristics
180 160
Per leg Per leg D= 0.10
160 140 D= 0.30
D= 0.50
140 120 D= 0.70
120 D= 1.00
100
100
IF [A]
80
P [W]
80
60
60
40
40
20 20
0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
Tc [°C] Tc [°C]
Figure 1. Power dissipation per leg as function Figure 2. Diode forward current per leg as function
of case temperature, Ptot=f(TC), of temperature, parameter: Tj≤175°C, Rth(j-c),max,
Rth(j-c),max D=duty cycle, Vth, Rdiff @ Tj=175°C
30
Per leg 140 Per leg
-55 C -55 C
25
120
25 C
25 C
20 100
100 C 100 C
80
IF [A]
IF [A]
15 150 C
60
10 175 C
40
150 C
5
20
175 C
0 0
0 0.5 1 1.5 2 2.5 0 1 2 3 4 5 6
VF [V] VF [V]
Figure 3. Typical forward characteristics per leg, Figure 4. Typical forward characteristics in surge
IF=f(VF), tp= 10 µs, parameter: Tj current per leg, IF=f(VF), tp= 10 µs,
parameter: Tj
90 1.E-04
80 Per leg
70 1.E-05
Per leg
60
1.E-06
50
QC [nC]
IR [A]
40 175 C
1.E-07
30
150 C
20 1.E-08
100 C -55 C
10 25 C
0 1.E-09
100 400 700 1000 200 400 600 800 1000 1200
dIF/dt [A/µs] VR [V]
1400
Per leg
Per leg 1200
1000
1
Zthjc [K/W]
800
C [pF]
D= 0.50
600
D= 0.20
0.1 D= 0.10 400
D= 0.05
D= 0.02
D= 0.01
200
Single Pulse
0
0.01 0 1 10 100 1000
1E-6 1E-3 1E0
tp [s] VR [V]
Figure 7. Max. transient thermal impedance per leg, Figure 8. Typical capacitance per leg as function of
Zth,j-c=f(tP), parameter: D=tP/T reverse voltage, C=f(VR); Tj=25°C; f=1 MHz
50
45
Per leg
40
35
30
EC [µJ]
25
20
15
10
5
0
0 200 400 600 800 1000 1200
VR [V]
Overview Applications
The KEMET SC Coils, SC-J Terminal Base Type AC • Consumer Electronics
line filters are offered in a wide variety of sizes and • Common mode choke
specifications.
Common mode
Benefits
t]]
Dimensions – Millimeters
OD T
H
5.0±2.0
(b)
(a)
(a ) (b )
Environmental Compliance
All KEMET AC Line Filters are RoHS Compliant.
RoHS Compliant
DC
Rated Inductance Temperature Finished Dimensions (mm) Wire
Part Resistance/ Weight (g)
Current (mH) Rise (K) Diameter
Number Line (mΩ) Approximate
AC (A) Minimum Maximum (Maximum)
OD T H
a b (mm)
Maximum (Maximum) (Maximum)
SC-02-10J 1
2 1 100 40 25 20 27 10 15 0.6 15
SC-02-20J1 2 2 110 40 25 20 27 10 15 0.6 15
SC-02-30J1 2 3 110 40 25 20 27 10 15 0.6 16
SC-02-50J1 2 5 120 40 25 20 27 10 15 0.6 20
SC-05-10J1 5 1 50 40 25 20 27 10 15 0.8 20
SC-05-20J1 5 2 70 40 34 23 33 18 16 0.8 25
SC-05-30J1 5 3 70 55 34 23 33 18 16 0.8 30
SC-05-50J1 4 5 80 60 34 23 33 18 16 0.8 32
SC-05-80J1 4 8 90 60 34 23 33 18 16 0.8 42
SC-10-10J 2 10 1 20 40 34 23 33 12 17 1.3 42
SC-10-20J2 10 2 22 50 42 29 44 18 22 1.4 70
SC-10-30J1 10 3 30 75 34 24 33 18 16 1.2 65
SC-12-15J2 12 1.5 18 50 42 29 44 18 22 1.5 70
SC-15-05J1 15 0.5 8 60 34 23 33 18 16 1.5 40
SC-15-10J2 15 1 12 55 44 30 44 18 22 1.7 75
SC-18-05J2 18 0.5 7 50 44 30 44 18 22 1.8 60
1
Thermal Class E (120°C)
2
Thermal Class A (105°C)
© KEMET Electronics Corporation • P.O. Box 5928 • Greenville, SC 29606 • 864-963-6300 • www.kemet.com LF0006_SC-J • 3/28/2017 2
Specifications
Shape and Dimensions
ODItem T SC-J
Rated Voltage 250 VAC/VDC
Withstanding Voltage 2,400 V (2 seconds, between lines)
Insulation Resistance > 100 MΩ at 500 VDC (between lines)
Thermal Class
H
(b)
5.0±2.0
[mm]
Frequency Characteristics
Frequency characteristic
1M 1 1M 1
6 6
3 3 05-80J
100K 1 100K 1
6 6 10-30J
3 02-50J 3 05-50J
Impedance (!)
Impedance (!)
10K 1 10K 1
6 6 05-30J
3 3
02-30J
1K 1 1K 1
6 6
Common mode
100
3
1
02-10J 3
100 1
6 6 05-10J
3 3
10 1 02-20J 10 1 05-20J
6 6
3 3
1 3 6 1 3 6 1 3 6 1 3 6 1 3 1 3 6 1 3 6 1 3 6 1 3 6 1 3
1M 1
6
3
100K 1 10-20J
6
AC Line Filters 3
Impedance (!)
10K 1
14 6
3
12-15J
1K 1
6
10-10J
3 15-05J
100 1
6
3 18-05J
10 1
6 15-10J
3
1 3 6 1 3 6 1 3 6 1 3 6 1 3
1K 10K 100K 1M 10M 30M
Frequency (Hz)
Notes on Use
Shelf Life
• Use within 6 months. If the product is used after a storage period of 6 months or longer, confirm its solderability
before use.
Storage Condition
• Avoid storage in high temperature and high humidity environment, as such condition may deteriorate the solderability
of external electrode.
• Avoid storage in atmosphere containing toxic gases or acid (e.g., sulphur and chlorine), as such gas may deteriorate
the solderability of external electrode.
• Avoid storage near strong magnetic field, as such condition may magnetize the product.
© KEMET Electronics Corporation • P.O. Box 5928 • Greenville, SC 29606 • 864-963-6300 • www.kemet.com LF0006_SC-J • 3/28/2017 3
Highlights
- High dV/dt
- High pulse current
- Low inductance
- Self healing
Specifications
Capacitance Range 0.01 to 4.7 µF
Capacitance Tolerance ±10 % (K) Standard; ±5% (J) Optional
Rated Voltage 600 to 3000 Vdc (275 to 500 Vac, 60 Hz)
Operating Temperature Range –55 ºC to 105 ºC*
*Full rated voltage at 85 ºC - derated linearly to 50% rated at 105 ºC
Maximum rms Current Check tables for values
Insulation Resistance > 100,000 MΩ x µF
Test Voltage between Terminals @ 25 ºC 160% rated DC voltage for 60 s
Test Voltage between Terminals & Case @ 25 ºC 3 kVac @ 50/60 Hz for 60 s
Life Test 2,000 h @ 85 ºC, 125% rated DC voltage
Life Expectancy 60,000 h @ rated Vdc, 70 ºC
30,000 h @ rated Vac, 70 ºC
RoHS Compliant
CDE Cornell Dubilier • 1605 E. Rodney French Blvd. • New Bedford, MA 02744 • Phone: (508)996-8561 • Fax: (508)996-3830
Type 940C, Polypropylene Capacitors, for Pulse, Snubber
High dV/dt for Snubber Applications
Part Numbering System
940 C 6 P 22 K –F
Capacitance RoHS
Compliant
Termination Capacitance Tolerance
Significant Indicator
Series Code Voltage Code Decimal Point figures in µF Code
940 C =Tinned Copper Wire 6 = 600 Vdc 16 = 1600 Vdc S = 0.0 K = ±10%
F = Insulated Stranded 8 = 800 Vdc 20 = 2000 Vdc P = 0. J = ±5%
Wire 10 = 1000 Vdc 30 = 3000 Vdc W = No decimal
NOTE: Other ratings, sizes and performance specifications are available. Contact us.
IRMS
Catalog Typical Typical 70 ºC
Cap. Part Number D L d ESR ESL dV/dt I peak 100 kHz
(µF) mm mm mm (mΩ) (nH) V/µs (A) (A)
600 Vdc (275 Vac)
.10 940C6P1K-F 9.0 34.0 0.8 28 19 196 20 2.5
.15 940C6P15K-F 10.5 34.0 0.8 13 20 196 29 4.0
.22 940C6P22K-F 11.5 34.0 0.8 12 20 196 43 4.4
.33 940C6P33K-F 13.5 34.0 0.8 9 21 196 65 5.6
.47 940C6P47K-F 15.5 34.0 1.0 7 22 196 92 6.9
.68 940C6P68K-F 18.0 34.0 1.0 6 23 196 134 8.1
1.00 940C6W1K-F 21.0 34.0 1.0 6 24 196 196 8.9
1.50 940C6W1P5K-F 25.0 34.0 1.2 5 26 196 295 10.9
2.00 940C6W2K-F 23.5 46.0 1.2 5 31 128 255 11.8
3.30 940C6W3P3K-F 27.0 54.0 1.2 4 36 105 346 15.3
4.70 940C6W4P7K-F 31.5 54.0 1.2 4 38 105 492 16.8
850 Vdc (450 Vac)
.15 940C8P15K-F 13.0 34.0 0.8 8 21 713 107 5.8
.22 940C8P22K-F 15.5 34.0 1.0 8 22 713 157 6.4
.33 940C8P33K-F 18.0 34.0 1.0 7 23 713 235 7.5
.47 940C8P47K-F 21.0 34.0 1.0 5 24 713 335 9.8
.68 940C8P68K-F 24.5 34.0 1.2 4 26 713 485 12.0
1.00 940C8W1K-F 22.5 46.0 1.2 5 30 400 400 11.5
1.50 940C8W1P5K-F 27.0 46.0 1.2 4 32 400 600 14.3
2.00 940C8W2K-F 30.5 46.0 1.2 3 34 400 800 17.9
2.20 940C8W2P2K-F 32.0 46.0 1.2 3 34 400 880 18.4
2.50 940C8W2P5K-F 34.0 46.0 1.2 3 35 400 1000 19.1
1000 Vdc (500 Vac)
.15 940C10P15K-F 15.0 34.0 1.0 7 22 856 128 6.7
.22 940C10P22K-F 17.5 34.0 1.0 7 23 856 188 7.4
.33 940C10P33K-F 20.5 34.0 1.0 6 24 856 283 8.8
.47 940C10P47K-F 24.0 34.0 1.2 5 26 856 402 10.6
.68 940C10P68K-F 28.0 34.0 1.2 5 27 856 582 11.7
1.00 940C10W1K-F 26.0 46.0 1.2 5 32 480 480 12.5
1.50 940C10W1P5K-F 31.0 46.0 1.2 4 34 480 720 15.6
2.00 940C10W2K-F 35.5 46.0 1.2 3 36 480 960 19.6
CDE Cornell Dubilier • 1605 E. Rodney French Blvd. • New Bedford, MA 02744 • Phone: (508)996-8561 • Fax: (508)996-3830
Type 940C, Polypropylene Capacitors, for Pulse, Snubber
High dV/dt for Snubber Applications
250
400
200
300
Vrms
Vrms
150 0.1 µF
0.47 µF 0.15 µF
1 µF 200 0.68 µF
100 2.2 µF
100
50
0 0
10 100 1000 10000 100000 10 100 1000 10000 100000
Frequency (Hz) Frequency (Hz)
500 500
400 400
Vrms
Vrms
300 300
0.15 µF 0.1 µF
0.47 µF 0.47 µF
200 2 µF 200 1 µF
100 100
0 0
10 100 1000 10000 100000 10 100 1000 10000 100000
Frequency (Hz) Frequency (Hz)
500 500
400 400
Vrms
Vrms
300 300
0.1 µF 0.022 µF
0.47 µF 0.22 µF
200 1.5 µF 200 1 µF
100 100
0 0
10 100 1000 10000 100000 10 100 1000 10000 100000
Frequency (Hz) Frequency (Hz)
CDE Cornell Dubilier • 1605 E. Rodney French Blvd. • New Bedford, MA 02744 • Phone: (508)996-8561 • Fax: (508)996-3830