Application
• All types of resistive, inductive and capacitive loads
• µC compatible power switch for 12 V, 24 V and 42 V DC applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input
and diagnostic feedback, monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions.
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BSP 752 R
Block Diagram
+ V bb
GND miniPROFET
Pin configuration
Top view
GND 1• 8 Vbb
IN 2 7 Vbb
OUT 3 6 Vbb
ST 4 5 Vbb
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BSP 752 R
Thermal Characteristics
Thermal resistance @ min. footprint Rth(JA) - 95 - K/W
Thermal resistance @ 6 cm2 cooling area 1) Rth(JA) - 70 83
1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air. (see page 17)
2not subject to production test, specified by design
3V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 .
Supply voltages higher than V bb(AZ) require an external current limit for the GND pin, e.g. with a
150Ω resistor in GND connection. A resistor for the protection of the input is integrated.
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BSP 752 R
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at Tj = -40...+150°C, V bb = 12..42V, unless otherwise specified min. typ. max.
Load Switching Capabilities and Characteristics
On-state resistance RON mΩ
T j = 25 °C, I L = 1 A, V bb = 9...52 V - 150 200
T j = 150 °C - 270 380
Nominal load current; Device on PCB 1) IL(nom) 1.3 1.7 - A
T C = 85 °C, T j ≤ 150 °C
Turn-on time to 90% V OUT ton - 80 180 µs
RL = 47 Ω
Turn-off time to 10% V OUT toff - 80 200
RL = 47 Ω
Slew rate on 10 to 30% V OUT, dV/dton - 0.7 2 V/µs
RL = 47 Ω, V bb = 13.5 V
Slew rate off 70 to 40% V OUT, -dV/dtoff - 0.9 2
RL = 47 Ω, V bb = 13.5 V
Operating Parameters
Operating voltage Vbb(on) 6 - 52 V
Undervoltage shutdown of charge pump Vbb(under)
Tj = -40...+85 °C - - 4
Tj = 150 °C - - 5.5
Undervoltage restart of charge pump Vbb(u cp) - 4 5.5
Standby current Ibb(off) µA
Tj = -40...+85 °C, VIN = low - - 15
Tj = +150 °C2), VIN = low - - 18
Leakage output current (included in Ibb(off)) IL(off) - - 5
VIN = low
Operating current IGND - 0.8 2 mA
VIN = high
1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air. (see page 17)
2higher current due temperature sensor
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BSP 752 R
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at Tj = -40...+150°C, Vbb = 12..42V, unless otherwise specified min. typ. max.
Protection Functions1)
Initial peak short circuit current limit (pin 5 to 3) I L(SCp) A
Tj = -40 °C, Vbb = 20 V, tm = 150 µs - - 9
Tj = 25 °C - 6.5 -
Tj = 150 °C 4 - -
Tj = -40...+150 °C, Vbb > 40 V , ( see page 12 ) - 5 2) -
Repetitive short circuit current limit I L(SCr)
Tj = Tjt (see timing diagrams)
Vbb < 40 V - 6 -
Vbb > 40 V - 4.5 -
Output clamp (inductive load switch off) VON(CL) 59 63 - V
at VOUT = Vbb - VON(CL),
Ibb = 4 mA
Overvoltage protection 3) Vbb(AZ) 62 - -
Ibb = 4 mA
Thermal overload trip temperature T jt 150 - - °C
Thermal hysteresis ∆Tjt - 10 - K
Reverse Battery
Reverse battery 4) -Vbb - - 52 V
Drain-source diode voltage (VOUT > Vbb) -VON - 600 - mV
Tj = 150 °C
1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation .
2not subject to production test, specified by design
3 see also VON(CL) in circuit diagram on page 8
4Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has
to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the
voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation!
Input current has to be limited (see max. ratings page 3).
Page 5 2004-01-27
BSP 752 R
Electrical Characteristics
Parameter Symbol Values Unit
at Tj = -40...+150°C, Vbb = 12..42V, unless otherwise specified min. typ. max.
Input and Status feedback
Input turn-on threshold voltage VIN(T+) - - 2.2 V
Input turn-off threshold voltage VIN(T-) 0.8 - -
Input threshold hysteresis ∆V IN(T) - 0.4 -
Off state input current I IN(off) 1 - 25 µA
VIN = 0.7 V
On state input current I IN(on) 3 - 25
VIN = 5 V
Status output (open drain), Zener limit voltage VST(high) 5.4 6.1 - V
IST = 1.6 mA
Status output (open drain), ST low voltage VST(low)
Tj = -40...+25 °C, IST = 1.6 mA - - 0.4
Tj = 150 °C, IST = 1.6 mA - - 0.6
Status invalid after positive input slope 1) t d(ST+) - 120 160 µs
Vbb = 20 V
Status invalid after negative input slope 1) t d(ST-) - 250 400
Input resistance (see page 8) RI 2 3.5 5 kΩ
Diagnostic Characteristics
Short circuit detection voltage VOUT(SC) - 2.8 - V
Open load detection voltage 2) VOUT(OL) - 3 4
Internal output pull down3) RO kΩ
( see page 9 and 14 )
VOUT(OL) = 4 V - 200 -
1no delay time after overtemperature switch off and short circuit in on-state
2External pull up resistor required for open load detection in off state.
3not subject to production test, specified by design
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BSP 752 R
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BSP 752 R
V
I IN Z
Vbb
IN V
ON
IL VON
PROFET OUT
I ST
OUT
ST
GND
V V ST GND
IN
V I
bb GND V OUT
R
GND
VON clamped to 59V min.
R
I
IN
ESD- ZD I
I
I
GND
GND RST(ON)
R GND RL
ST
Signal GND Power GND
Page 8 2004-01-27
BSP 752 R
R
EXT high Vbb
IN
OFF
PROFET OUT
V
OUT
ST
Open load
GND
Logic R
O
unit detection
V
Signal GN D bb
GND disconnect
{
EL
GND
ZL
GND disconnect with GND pull up
ER
R
L
Vbb
IN Energy stored in load inductance: EL = ½ * L * IL2
V V V
V IN ST GND
bb IL * L IL * R L
E AS = * ( V b b + | V O U T ( C L )| ) * ln (1 + )
2 * RL | V O U T ( C L )|
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BSP 752 R
D=0.1 D=0.1
10 1 10 1
D=0.05 D=0.05
Z thJA
ZthJA
D=0.02 D=0.02
D=0.01
10 0 10 0
D=0.01
D=0
10 -1 10 -1
D=0
10 -2 -7 -6 -5 -4 -3 -2 -1 0 1 2 4 10 -2 -7 -6 -5 -4 -3 -2 -1 0 1 2 4
10 10 10 10 10 10 10 10 10 10 s 10 10 10 10 10 10 10 10 10 10 10 s 10
tp tp
300 400
mΩ
mΩ
300 150°C
RON
RON
200
250
150 200
25°C
150
100
-40°C
100
50
50
0 0
-40 -20 0 20 40 60 80 100 120 °C 160 0 5 10 15 20 25 30 35 40 V 50
Tj Vbb
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BSP 752 R
160 160
µs µs
9V
120 120
13.5V
toff
t on
100 100
9...42V
80 80
42V
60 60
40 40
20 20
0 0
-40 -20 0 20 40 60 80 100 120 °C 160 -40 -20 0 20 40 60 80 100 120 °C 160
Tj Tj
2 3.5
V/µs
V/µs
1.6
dton
dtoff
-dV
2.5
dV
1.4
1.2
2
1
42V
1.5
0.8
42V
0.6 1
13.5V
0.4
9V 13.5V
0.5
0.2 9V
0 0
-40 -20 0 20 40 60 80 100 120 °C 160 -40 -20 0 20 40 60 80 100 120 °C 160
Tj Tj
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BSP 752 R
10 2.5
µA µA
I bb(off)
I L(off)
6 1.5
4 1
2 0.5
0 0
-40 -20 0 20 40 60 80 100 120 °C 160 -40 -20 0 20 40 60 80 100 120 °C 160
Tj Tj
Typ. initial peak short circuit current limit Typ. initial short circuit shutdown time
IL(SCp) = f(Vbb) toff(SC) = f(Tj,start) ; Vbb = 20V
10 4
ms
A
-40°C
3
toff(SC)
IL(SCp)
25°C
2.5
6 150°C
4
1.5
1
2
0.5
0 0
0 10 20 30 40 V 60 -40 -20 0 20 40 60 80 100 120 °C 160
Vbb Tj
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BSP 752 R
µA
µA
-40...25°C 150°C
8
IIN
IIN
30
on
off 20
4
10
2
0 0
-40 -20 0 20 40 60 80 100 120 °C 160 0 1 2 3 4 5 6 V 8
Tj VIN
Typ. input threshold voltage Typ. input threshold voltage
VIN(th) = f(Tj ) ; Vbb = 13,5V VIN(th) = f(V bb) ; Tj = 25°C
2 2
V V
on on
1.6 1.6
off
V IN(th)
1.4
VIN(th)
1.4
1.2 off
1.2
1 1
0.8 0.8
0.6 0.6
0.4 0.4
0.2 0.2
0 0
-40 -20 0 20 40 60 80 100 120 °C 160 0 10 20 30 50
V
Tj Vbb
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BSP 752 R
t d(ST+/-)
1400
200
1200
L
175
1000 150
td(ST+)
800 125
100
600
75
400 42V 13,5V
50
200
25
0 0
0 0.25 0.5 0.75 1 A 1.5 0 10 20 30 V 50
IL Vbb
mJ
kΩ
1400
600 150°C
1200
EAS
RO
500
1000
400
800
300
600 25°C
200
400 -40°C
200 100
0 0
0 0.25 0.5 0.75 1 A 1.5 0 10 20 30 V 50
IL Vbb
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BSP 752 R
Timing diagrams
IN IN
Vbb
ST
I V
L OUT
ST IL
t
Figure 2a: Switching a resistive load, Figure 2c: Switching an inductive load
turn-on/off time and slew rate definition
IN
IN
V OUT
ST
90%
t on dV/ dtoff
dV/ dton t
off
VOUT
10%
IL
t
IL
ST
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BSP 752 R
Figure 3a: Turn on into short circuit, Figure 3b: Short circuit in on-state
shut down by overtemperature, restart by cooling shut down by overtemperature, restart by cooling
IN
IN
V OUT V OUT
IL I
L( SCp )
I I
L( SCr ) L
I
L (S C r)
tm
ST
ST
t
t t
d(ST+)
Figure 4: Overtemperature: Vo n
Reset if Tj < Tjt
IN
ST V b b( u c p )
Vbb( under )
IL
Vbb
TJ
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BSP 752 R
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee
of characteristics.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices please contact your
nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide
(see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the
types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 17 2004-01-27
This datasheet has been downloaded from:
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