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Edited by Brad Thompson


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Quickly find pc-board shorts


with low-cost tracer technique
Teno P Cipri, Engineering Expressions Consulting
predominant failure mechanism

A
CURRENT PATH
for production pc boards is shorted
traces. Finding hidden shorts is of-
ten time-consuming and frustrating.
Typical techniques of cutting traces, lift-
ing pads, and “blowing” shorts are, at NO VOLTAGE DROP
best, questionable because they may af- TRACE A
fect the reliability of the circuit, and the
ever-decreasing geometries and lower NODE 1 NODE 2
SHORT
NODE 3 NODE 4
voltage ICs make these practices tricky
and risky. High-end, four-wire DMMs TRACE B NODE 7 NODE 6 NODE 5
(digital multimeters) or ohmmeters,
which can accurately measure the small
NO VOLTAGE DROP LOWEST VOLTAGE DROP
resistance values, are expensive
Figure 1
and sometimes not available on a
designer’s bench. By applying a fixed current to various nodes and looking at the resultant voltage drops, you can
An inexpensive alternative approach home in on the likely location of a pc-board short circuit.
for finding short circuits, using the con-
cepts of four-wire DMMs and ohmme- Most digital buses have at least 1 over keep the battery from depleting when the
ters is simple and requires only the tools the length of the run, but a trace imped- circuit is not in use.
you already have on your bench and a ba- ance of only 200 m still has a 2-mV A node can be any accessible part of the
sic understanding of Ohm’s Law. This ap- drop with 10-mA current applied. Most circuit path under test, such as a via, a
proach uses the principal that all con- lab-grade handheld DMMs can easily re- pad, or a test point (Figure 1). Note the
ductors have resistance properties, and a solve to 1 mV. Because you are looking for current path: When current is flowing be-
distinct voltage drop exists between the relative values, the absolute accuracy of tween two nodes, a minute voltage drop
various nodes in the shorted circuit. This the instrument isn’t critical. However, the occurs across the two nodes. When the
approach systematically locates the nodes current must be constant to achieve re- current doesn’t flow between two nodes,
with lowest impendence between them peatable results, and you must isolate its there is no voltage drop across those
and isolates the fault to two nodes. current source from the ground of the nodes.
circuit under test. To find the short in this example, put
A 1.5V battery in series with a 1.5-k one DMM probe on any node on Trace
Quickly find pc-board shorts
resistor is an adequate current source for A and the other on any node on Trace B,
with low-cost tracer technique ....................97
this purpose. The battery provides the and note the voltage drop. In this exam-
Read isolated digital signals isolation and relatively constant voltage; ple, if you had started with the positive
without power drain ......................................98 select the resistor to source around 10 probe on Node 1 and the negative probe
MOSFET shunt regulator mA. (For lower impedance traces, such as on Node 5 and moved the negative probe
substitutes for series regulator ................100 power-supply lines, or in situations in to Node 6, you would note a slight volt-
which the DMM lacks millivolt resolu- age drop. Next, you move the probe to
Zener test circuit serves
tion, use a higher current.) An optional Node 7 and note that the voltage drop is
as dc source ..................................................104
clamping diode, with a cathode connect- equivalent to the voltage drop at Node 6.
Gain-programmable circuit ed to the battery’s negative terminal and From this test, you can deduce that the
offers performance and flexibility............106 an anode connected to the resistor’s free short must exist between nodes 5 and 6
Publish your Design Idea in EDN. See the end, provides protection for low-voltage because no current flows from Node 6 to
What’s Up section at www.edn.com. logic circuits. If you use the diode, you Node 7. Then, move the positive probe to
may also need to add a power switch to Node 2 and note a small voltage drop.
www.edn.com November 25, 2004 | edn 97
design
ideas
Continue down the line to Node NODE 5 NODE 6 NODE 7
source is connected to any node on
3 and note another small drop. Trace A and the other side of the
TRACE A
Next, probe Node 4 and note current source is connected to any
there is no voltage node on Trace B.
drop. You can now Figure 2 SHORT In this example, the short is be-
deduce that the short must be be- tween two node pairs, and you can
tween nodes 2 and 3 and nodes isolate the short only to those
TRACE B
5 and 6. pairs. A little knowledge of the
Redrawing Figure 1 with the NODE 1 NODE 2 NODE 3 NODE 4 board layout and common sense
equivalent circuit in Figure 2 now come into play. You need to
makes clear how this technique The equivalent circuit of the pc-board layout shows the principal know only where the two traces
works. You are now looking at a of the source-and-probe technique. are adjacent between nodes 5 and
simple series network of resistors 6 and nodes 2 and 3, and you have
and looking for voltage drops across any not flowing). When current is flowing, found the most likely place for the short.
resistor that has current flowing through the short is farther from the current If it is underneath a component, you have
it. When a node is outside the current source. If no current is flowing, then the to remove the component; removing the
path, no voltage drop occurs. By under- short is closer to the current source. This component often removes the short. If
standing the relationship of each of the two-valued logic makes it simple to iso- the short is on an internal layer, you may
vias and their position in the current late the problem. The beauty of this tech- have to do some selective cutting and
path, you can systematically isolate the nique is that it doesn’t matter to which jumping to isolate the short from the
short by looking for lower voltage (cur- two nodes the current source is connect- traces, but at least you minimize the
rent flowing) or higher voltage (current ed, as long as one side of the current number of cuts on the board.왏

Read isolated digital signals without power drain


Alfredo H Saab and Joseph Neubauer, Maxim Integrated Products Inc, Sunnyvale, CA
lthough optocouplers offer de-

A signers a straightforward method of


establishing galvanic isolation be-
tween circuits that operate at different
SENSE_CLK

R1
1k
MAX5048

IC1
W1
ONE
T1
W3
ONE
ISOLATION
BARRIER

ground potentials, they do not provide an TURN TURN


1/4 74HC132
ideal approach. An optocoupler draws C1 Q1
power from the isolated circuit, switches 50 pF IC2 W2 W4 2N7000
R2 ONE
relatively slowly, and loses current-trans- 1k TURN
ONE
TURN DATA_IN
fer ratio as its light emitter ages.
20 pF
The circuit in Figure 1 overcomes T2
IC2
these limitations by replicating a digital C2 ISO_COMMON
signal’s state, drawing no power from the 1/4 74HC132
isolated input, and consuming only
modest power on the nonisolated side.
_
As Figure 2 shows, the circuit imposes DATA_OUT
LE IC
C3
0.1 F
only a 20-nsec input-to-output delay 3
+
from the positive edge of SENSE_CLK to MAX913
DATA_OUT.
Figure 1 R3 R4
MOSFET transistor Q1 oper- 3.3k 1.5k
5V
ates in either of two states—high resist-
ance between source and drain (RDS/OFF),
or low resistance (RDS(ON))when a control
signal drives Q1 into conduction. When You can use a simple ferrite-bead transformer to isolate logic-level signals.
conducting, Q1 imposes a low resistance
across T1’s secondary winding, W3. The puts of MOSFET-driver IC1 differentiate end of winding W1. Figure 2 shows the
remainder of the circuit senses the state the SENSE_CLK signal’s positive-going relationship among the circuit’s signals.
of T1’s secondary resistance. Resistor R1, input edge, producing a positive-going Connected in series-aiding mode, the
capacitor C1, and the complementary in- 5V pulse at IC1’s output and driving one two primary windings W1 and W2 of T1
98 edn | November 25, 2004 www.edn.com
design
ideas
form a 2-to-1 inductive volt- 1V/DIV
and R4 set IC3’s trigger-volt-
age divider whose center tap age threshold. Transformer
drives the inverting input of SENSE_CLK T1 provides a 1-to-1-to-1
IC3, a high-speed compara- 0 turns ratio and comprises a
tor. With Q1 off and thus pre- MAX5048
single-hole ferrite bead
senting an open circuit OUTPUT (Fair-Rite part number
0
across the secondary of T1, 2673000101) with three
the junction of windings W1 identical single-turn wind-
MAX913- INPUT
and W2 applies a pulse of ap- ings. To minimize stray in-
0
proximately 2.5V to com- ductance, keep the connec-
parator IC3’s inverting input tion to the junction of
and drives IC3’s internal state MAX913 LE windings W1, W2, and IC1 as
low. Meanwhile, IC2’s two 0 short as possible. Also, the
gates, resistor R2 and capaci- grounded end of W2 should
DATA_IN
tor C2 generate a short strobe return to IC1’s ground con-
pulse in the middle of IC1’s 0 nection.
output pulse and applied to The circuit’s isolation ca-
DATA_OUT
IC3’s LE (latch-enable) input. pabilities depend on its pc-
0
Latching IC3’s internal board layout and the prop-
50 nSEC/DIV
state to its external output erties of transformer T1,
(DATA_OUT) produces whose type 73 ferrite core is
Figure 2 Each positive-going transition of SENSE_CLK transfers the
a logic-low output that moderately conductive.
follows DATA_IN. If DATA_ state of the galvanically isolated digital signal at DATA_IN to DATA_OUT. Thus, T1’s isolation proper-
IN goes sufficiently positive ties depend on its windings’
to bias Q1 on, Q1’s low resistance across ing pulse at LE forces IC3’s DATA_OUT insulation. For example, Teflon or Kap-
W3 reflects a low impedance to windings high, again following the state of ton-insulated wire can withstand sever-
W1 and W2 of T1. The reduced pulse am- DATA_IN. al kilovolts. If you carefully construct T1
plitude at the junction of W1 and W2 and IC1, IC2, and IC3 operate from a single using the specified core and Teflon-in-
IC3’s inverting input of approximately 5V power supply. Separate bypass capac- sulated AWG #24 wire, the transformer
0.5V is insufficient to trigger IC3,, and itors placed adjacent to each device’s can exhibit interwinding capacitances of
IC3’s internal state goes high. The latch- power pins minimize noise. Resistors R3 0.2 pF or less.왏

MOSFET shunt regulator substitutes


for series regulator
Stuart R Michaels, SRM Consulting
ou would normally use a series lin- has a threshold voltage of 2 to 4V at 250 at 50 mA. Because you operate the MOS-

Y ear regulator or a dc/dc converter to


obtain 3V dc from a higher supply.
However, when breadboarding a concept,
A. The upper curve of Figure 2 shows
that the IRF521 achieves a gate-to-source
voltage of 3V at a current of about 200
FET at or near threshold, its on-resistance
spec doesn’t apply, and the output im-
pedance of this circuit is far higher than
you may be able to use a shunt regulator, A. MOSFETs can vary from device to you would expect from the on-resistance.
especially if a series regulator of the cor- device, but the typical MOSFET has a However, in general, the lower the on-re-
rect voltage is unavailable. The MOSFET threshold at approximately the mean be- sistance, the lower the output impedance
in Figure 1 can replace a zener diode in a tween the maximum and the minimum at a specific current near threshold.
shunt regulator and provide lower output limits. This circuit may require that R2 and C1
impedance than a zener diode. The lower curve in Figure 2 is the out- stop the oscillation in the MOSFET. Add
The MOSFET is self-biased by con- put impedance, which you obtain from a filter capacitor to the output to mini-
necting its drain to its source. The differ- the upper curve by differentiating the mize the effect of load transients. Con-
ence between the input voltage and the upper curve. Although the output im- necting a large filter capacitor from the
gate-to-source threshold voltage,VGS, sets pedance, ROUT, is near 800 at a current gate to the source with short leads elim-
the current. The IRF521 in this example of 100 A, it rapidly drops to less than 6 inates the need for R2. You can use other
100 edn | November 25, 2004 www.edn.com
design
ideas
VIN

R1

GATE-TO-SOURCE THRESHOLD VOLTAGE

VOUT VGS (V)


ROUT (k)

S R2
100
G
IRF521
C1
0.1 F
OUTPUT IMPEDANCE

ID (A)
A MOSFET configured to
Figure 1 Figure 2
replace a zener diode of a
shunt regulator provides lower impedance
edn041111di35301 DIANE A plot of key parameters—gate-to-source voltage and output impedance—versus drain current
than a diode-based implementation. shows smoothness of variation over two and one-half decades.

MOSFET families and other voltages if wide variations in operating voltage. For ative-temperature coefficient of the gate-
necessary. instance, many 3.3V-dc microcontrollers to-source voltage. This circuit has signif-
Although you may be unable to get the can operate as low as 2.5V dc and as high icant change in output voltage over a
exact output voltage you need at the cur- as 3.6V dc. Note that operating a MOS- wide temperature range; it is suitable for
rent you prefer, many devices tolerate FET near its threshold causes a large neg- only limited temperature ranges.왏

Zener test circuit serves as dc source


John Jardine, JJ Designs, West Yorkshire, UK
his Design Idea describes a versa-

T tile test circuit for zener diodes after


yet another misread zener diode had
infiltrated the ranks of 1N4148 diodes 2.1V
FULL LOAD
100V 5V
B

100V
AT IDC욷2A
A

assembled on a pc board. As a bonus, the L1 330 F


0V D3 OUTPUT
circuit can serve as a moderate-voltage, 10 TO 110 kHz
BA157 NOMINAL
E1 100V AT 10 mA
power-limited adjustable dc source. Al-
E2
though conventional multimeters’ resist- 4.7V
2.7V R6
ance ranges typically apply enough volt- R1 R2 C1 2.2
47k 47k IN5617GP 1W
age to forward-bias most diodes, few can 47 pF
Q1 C3 MAXIMUM
IC1 FET (LOGIC) LOAD
drive a zener diode into reverse conduc- 74HC132 (1/4) R5 0.3, 200V 1 F
1 100k 2SK2350 150V
tion. Figure 1a shows a simple variable- 2
3
frequency dc/dc step-up converter whose D2
R3
output voltage depends on the device 10k IN4148
A
under test’s breakdown voltage. D1 5V 15V
R4 0V B 50k
Upon power application, Pin 3 of IC1 4.7V
100k
IN750
(one section of a 74HC132 quad dual-in- C2
put Schmitt-trigger NAND gate) goes to 10 nF LOGIC ONE WHEN VARIABLE
22 TO 110V
UNIT IS RUNNING
logic one and switches on Q1, an N-chan- OUTPUT

nel logic-level power MOSFET. Current


(b)
flows through Q1 and R6 and stores en- (a)

ergy in inductor L1’s magnetic field. The output voltage of a simple variable-frequency dc/dc step-up converter depends
Figure 1
Zener diode D1 limits the voltage at on the device under test’s breakdown voltage (a). To use the circuit as a variable
IC1’s Pin 1 to 4.7V. Simultaneously, diode medium-voltage power supply, replace the device under test with a network (b).
104 edn | November 25, 2004 www.edn.com
design
ideas
D2 and resistor R3 charge C2 and establish 4.7V—plus the forward voltage across power supply and 430 mA of input cur-
a logic one at IC1’s Pin 2. When the volt- D3—0.7V. Thus, for a 100V zener as the rent, the circuit delivers 10 mA at 100V
age at point E1 reaches approximately device under test, the voltage at E2 meas- for a 100V output, yielding an efficiency
2.7V, IC1’s input-voltage threshold, IC1’s ures approximately 105.4V. of approximately 50%. Feeding L1 from a
output goes to logic zero, switching off At start-up and under fault conditions, separate 12V power supply improves ef-
Q1. resistor R4, diode D2, and resistor R3 pro- ficiency.
Energy stored in L1’s magnetic field duce an asymmetrical oscillation at ap- If you design your own inductor for L1,
discharges through fast-recovery diode proximately 2 kHz, which reduces the av- aim for a nominal inductance of 330 H
D3 and charges C3. Capacitor C1 helps re- erage current through L1 and Q1 to a safe at 2A and a dc winding resistance of less
move diode D1’s stored charge and helps level. than 0.5. For optimum operation, use
restart the charging cycle. To use the circuit as a variable medi- a fast-recovery diode for D3 and a logic-
After several cycles, the voltage at E2 um-voltage power supply, replace the de- level N-channel MOSFET with a break-
reaches the device under test’s reverse- vice under test with the network in Fig- down voltage of 200V or greater and an
breakdown voltage and feeds current via ure 1b. Adjusting the potentiometer on-resistance of less than 0.3 for Q1,.
R1 to IC1’s Pin 1. As a result, the voltage varies the voltage at point E2 from 22 to Note that zener-diode manufacturers
at E2 stabilizes at the sum of the device 120V. Maximum current available from specify breakdown voltages at specific
under test’s reverse-breakdown voltage the circuit depends on the dc resistance, test currents. Also, when you subject
and a constant offset voltage of 5.4V L1’s magnetic-saturation characteristics, them to high reverse voltages, signal
comprising the voltage across D1— and Q1’s on-resistance. For a nominal 5V diodes exhibit zener behavior.왏

Gain-programmable circuit
offers performance and flexibility
Luo Bencheng, Key Laboratory of Mental Health, Institute of Psychology,
Chinese Academy of Sciences
ou can use a standard precision in- pins Z0 to Z2 of IC2 R1

Y strumentation amplifier, such as the


INA118 or AD623, as a gain-pro-
grammable amplifier with high accura-
with a microcontroller
to provide self-ad-
justable gain according
GAIN
SELECT
(VIA MICRO-
CONTROLLER)
B
A

C
R2

R3

cy and wide gain range. However, the gain to the selected weight- R4
range of such parts is fixed at certain val- ing resistor. Unfortu- K
R5
ues, limiting their flexibility. To solve the nately, the perform- IC2
problem, a usual way is to use a gain-ad- ance and quality of the R6

justable circuit controlled by a micro- circuit cannot provide R7


computer (Figure 1). good performance and
R8
IC2 is a programmable 1-of-8 analogy high quality due to the V
multiplexer that connects to eight on-resistance of IC2,
R0
weighting resistors, R1 to R8, to improve which you also cannot VIN _
the gain range of the circuit based on IC2, control, especially as IC1
VOUT
OP27
a general-purpose precision amplifier. the tempera- +
Figure 1
The overall gain of the circuit depends on ture changes.
R
the value of the selected weighting resis- The modified gain-
V
tor, as follows: adjustable amplifier
circuit in Figure 2 uses
the same IC1 but A basic gain-programmable amplifier circuit uses digital outputs
changes IC2 to a pro- from a microcontroller to set gain.
grammable 2-of-8 dif-
where RON is the on-resistance of IC2, and ference-input analog multiplexer, which to RG8, to improve the gain range of the
RX is one of the selected weighting resis- connects to four balancing resistors, R01 circuit. By controlling the port-select pins
tors, R1 to R8. You control the port-select to R04, and eight weighting resistors, RG1 Z0 to Z1 of IC2 with a microcontroller, the

106 edn | November 25, 2004 www.edn.com


design
ideas
circuit provides self-adjustable gain V
R01
with high quality. The overall gain of the K1
circuit is: R02
VIN +
IC01 R03
_ V
R04

V +
where RGA is one of the selected weight-
VOUT
ing resistors, RG1 to RG4, and RGB is one _
of the selected weighting resistors, RG6 RG1
to RG8. V
Analog multiplexer IC2 is on the in- RG2 V
K2
put side of amplifier IC1. Resistors R01 to _ RG3
R04 balance the signal-input channel to IC02 RG4
decrease the level-shifting because of
+
the on-resistance of multiplexer IC2 and C A
minimize the effect of that resistance. RG5 RG6 RG7 RG8 GAIN
Additionally, two operational ampli- V SELECT
fiers, IC01 and IC02, act as follow-
ers to improve the overall driver Figure 2
performance and common-mode-re-
jection capacity of the circuit.왏 The modified circuit provides more flexibility, along with high performance.

108 edn | November 25, 2004 www.edn.com

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