Middle Technical University Electronics Lab.

Electrical Engineering Technical College 2nd Stage

Electrical Power Technical Engineering Dept. Mohammed D. Altamemi

Experiment 14
Depletion Type MOSFET n- channel Characteristics

14-1 Object:

In this experiment we will study the depletion type MOSFET n-channel

characteristics.

14-2 Theory:

Figure (14-1) shows a depletion type MOSFET of n channel, a conducting bar

of material type n with a region type p to the right and a graduator or insulated hatch
on the left. The free electrons can flow from the source to the drain through the
material type n. the region type p is called substrate (or body); this reduses physically
the conduction path to narrow channel. The electrons that flow from the source to the
drain must pass through this channel.

Figure (14-1) the depletion type channel n MOSFET

To the left of the channel, a thin layer of Silicon Oxide (SiO2) is deposited,
which is an insulator, since the graduator is insulated from the channel, the current in
the graduator is negligible, even when the voltage of the graduator is positive.

14-2-1 depletion Mode:

The operation with negative graduator voltage is called depletion or narrowing

mode. Figure (14-2) shows a MOSFET with graduator or hatch negatively polarized.
The power supply, VDD, forces the free electrons to flow from the source to the drain.
These electrons flow through the narrow channel to the left of the substrate type p.

The voltage of the graduator can control the channel width. The more negative
voltage in the graduator is the smaller current of the drain will be. And when the
voltage of the graduator is negative enough, the current of the drain is cut-off.

MD
Middle Technical University Electronics Lab.
Electrical Engineering Technical College 2nd Stage
Electrical Power Technical Engineering Dept. Mohammed D. Altamemi

Figure (14-2) the depletion type MOSFET in depletion mode

14-2-2 Enhancement Mode:

Since the graduator of MOSFET is insulated from the channel, we can apply a
positive voltage to it, as it is shown in figure (14-3).

Figure (14-3) the depletion type MOSFET in enhancement mode

The positive voltage in the graduator increases the number of free electrons that
flow through the channel, the more positive the voltage in the graduator is the batter
the conduction from the source to the drain will be. The operation of the MOSFET
with a positive graduator voltage is based on the channel conductivity enhancement.
For this reason, the operation with positive graduator is called enhancement or
widening mode.

In any one of the operation modes (depletion, and enhancement), on account of

the insulating layer, the current that flows through the graduator or hatch is negligible.
The input resistance of a MOSFET is incredibly high, usually about (10 to
10.000)GΩ.

MD
Middle Technical University Electronics Lab.
Electrical Engineering Technical College 2nd Stage
Electrical Power Technical Engineering Dept. Mohammed D. Altamemi

14-2-3 Drain Curves:

Figure (14-4) shows the typical drain curves for MOSFET of channel n,
together with load line for common source configuration. Notice how the curves of
the upper part have a positive voltage VGS and those of the lower part have a negative
voltage VGS. The drain curves that is found in the bottommost part is when
VGS=VGS(off). Throughout this curve, the drain current is approximately zero. When
the voltage VGS is between VGS(off) and zero, the depletion or narrowing mode of
operation is obtained. On the other hand, when the voltage VGS is above zero the
enhancement or widening mode of operation is obtained.

Figure (14-4) ID-VDS characteristics of the depletion type channel n MOSFET

14-2-4 Transconductance curve:

Figure (14-5) shows the transconductance curve of MOSFET. IDSS that represent
the drain current when the graduator is in short-circuit. The MOSFET just described is
called MOSFET of depletion or narrowing type; it can have drain current either in the
depletion mode or in enhancement. Since this type of MOSFET conducts when
VGS=0, it is also known as normally conducting or normally lit MOSFET.

Figure (14-5) ID-VGS characteristics of the depletion type MOSFET

14-2-5 System of symbols:

Figure (14-6) shows the symbol, which represents a MOSFET of depletion type
channel n. the vertical line that represent the channel is on the right of the graduator or

MD
Middle Technical University Electronics Lab.
Electrical Engineering Technical College 2nd Stage
Electrical Power Technical Engineering Dept. Mohammed D. Altamemi

hatch. The arrow in the substrate type p points to the type n material of the channel. In
some applications, a voltage can be supplied to the substrate to have more control
over the drain current. For this reason, some MOSFET have four external terminals.
In most application, the substrate is connected to the source. Usually, the
manufacturer connects internally the substrate to the source; the result is a device with
three terminals whose symbol is shown in figure (14-6).

Figure (14-6) symbol of the depletion type channel n MOSFET

There is also a MOSFET of the depletion (narrowing) type with p channel. it

consists of a bar of material type p with a region type n on the right, and a graduator
or insulated hatch on the left. The conventional symbol for a MOSFET with p channel
is similar to the one of the MOSFET with n channel, except that the arrow points
outward. The action of a MOSFET of p channel is complementary, that is to say, all
the voltage and currents are inverted.
14-2-6 Maximum Voltage Graduator Source:
The MOSFET of the depletion and enhancement type has a thin layer of
insulating silicon oxide, since the insulating layer is very thin, it is easy to destroy it
for many reasons as follow:
1. if an excessive graduator- source voltage applied.
2. If the MOSFET inserting in a circuit when power supply is connected.
3. The transient voltage caused by inductive can exceed nominal voltage VGS(max).
4. When pick up a MOSFET with the hand can induce a static charge exceeds the
nominal voltage VGS(max)
Some MOSFET are protected with an internal zener diode that is connected between
the graduator and source. The zener voltage is less than the nominal voltage V GS(max).
therefore, the zener diode is destroyed before any damage is done to the thin
insulating layer.

14-3 Procedures:
Part 1 Depletion type MOSFET n-channel:
Figure (14-7) is a D-MOSFET transistor channel n with an input resistance of
1KΩ and two zener diode of 15V between gate and source that protect it from too
high voltages.

MD
Middle Technical University Electronics Lab.
Electrical Engineering Technical College 2nd Stage
Electrical Power Technical Engineering Dept. Mohammed D. Altamemi

Figure (14-7) CIRCUIT 3 and CIRCUIT 4

1. Carry out the circuit assembly shown in figure (14-7).

2. With a voltmeter measure the voltage between gate and source and select little by
little the values from table (14-1) and then measure the current IDS and make a
note of it.
Table (14-1)
VGS (mV) IDS(mA)
0
-240
-480
-600
-960
+240
+480
+1.08 V
+4.8 V

14-4 Discussions:

1. Explain the results, that you get in table (14-1).

2. Try to connect D-MOSFET P-channel as in figure 14.7, and try to find the (IDS-
VGS) characteristics.

MD