2, 2006, 99-113 99
Sari. Pada penelitian ini, antena yang beroperasi pada frekuensi harmonik kedua
dipelajari dan diimplementasikan menggunakan bahan antena mikrostrip. Antena
yang dihasilkan terdiri dari sebuah osilator FET yang berfungsi sebagai
pembangkit frekuensi fundamental dan pengali frekuensi, serta antena patch
yang beresonansi pada frekuensi harmonik ke-dua sebagai peradiasi. Daya
maksimum pada frekuensi harmonik kedua dapat dihasilkan dengan
mengoptimumkan impedansi pada frekuensi fundamental dan frekuensi
*
This research is funded by ITB Research Grant no. 0076/K01.03/PL2.1.5/VI/2005.
Received April 2006, Revised September 25th, 2006, Accepted for publication September 25th, 2006.
100 A. Kurniawan, A. Hasyim & Y. Wahyu
1 Introduction
E
H
Strip konduktor
h Substrat dielektrik
Negative
resistance
The most common dielectric materials used in the microstrip technique are
duroid [6] with relative permitivity εr = 2.56 εo, quartz (εr = 2.78 εo), alumina (ε
= 9.7εo), silicon (ε = 11.7 εo), teflon (ε = 2.56 εo), with εo is free space
permitivity (εo= 8.854 x10-12 F/m. In this research, we choose diclad materials to
provide a better radiation performance. The harmonic frequency is generated
using FET transistor, which is designed in such a way to produce negative
resistance characteristics, as described in Figure 2.
The characteristic and parameter of the FET transistor is: GaAsFET AT-8250,
with the drain-source voltage Vds = 3 V, and the drain-source current Ids = 20
mA. The S parameter of the FET transistor on a common source configuration is
given by :
ZL
6,105|4.56
drain
12,44|4,56 12,44|4,56
Source
Gate
12,055 |4,56
l/4
4,988
The design results show that the S parameter on the direction of the load (|Γt|) is
maximal at the centre frequency. The maximum value of |Γt| resulted from the
design is 1.238, which occurs at the frequency f = 2.435 GHz. Changing the Vgs
will change the oscillating frequency and the output power, i.e. decreasing the
Vgs will lower the oscillating frequency and output power.
Figure 4 shows the top view of the two-element patch array antenna, which is
designed to operate at the second harmonic frequency. The two-element patch
antenna is designed to obtain higher gains. The patch antenna acts as the load
for the oscillator, ZL; while Zin is an input impedance of the patch antenna.
46.367
23.222
18.6366
38.639 Wf = 1.3
Zo = 50 Ω Zin = 99 Ω
while at the second harmonic frequency, it is found that Zin= 99 ohm, which is
dominant resistive at the second harmonic frequency and dominant capacitive at
the fundamental frequency.
The active second harmonic antenna is obtained when the oscillator circuit is
match-combined with the patch array antenna. To match the impedance
between antenna elements, a coupling scheme in the form of a transmission line
with characteristic impedance of 50 Ohm is used. This is chosen because the
input impedance of each antenna element is 99 Ohm, so that using parallel
feeding scheme from the active circuit the matching condition can be achieved.
46.222
23.222
18.6366
38.639 Wf = 1.3
Zo = 50 Ω Zin = 99 Ω
6.105|4.56
drain
12.44|4.56 12.44|4.56
Source Gate
12.055 |4.56
h = 1.57 mm
r = 2.5
l/4
t = 0,03556 mm
tanδ = 0.001
4,988 σ = 5.8x107 s/m
Figure 5 shows the top view of the active second harmonic antenna with two
elements. Antenna elemen-1 and elemen-2 are the passive component at the
two-element patch antenna, which acts as the radiator subsystem. The active
component that constitutes the oscillator FET transistor acts as the second
harmonic frequency generator.
The simulation results of the maximum radiation show that at the direction of
Φ= 0o, the output radiation at the second harmonic frequency is P2fo2s = – 42
dBm, while at fundamental frequency is Pfo2s = – 87 dBm (see Table 1).
This shows that the design and simulation of the second harmonic antenna can
generate the second harmonic frequency output power that is much higher than
its fundamental frequency. In other words, the design is achieved to suppress
the fundamental frequency and other harmonic frequencies except the second
harmonic frequency. To see the loss due to the second harmonic design, we
found that the total output power at the second harmonic frequency is P2fo2s = -
42 dBm; while the total output power of fundamental frequency without the
second harmonic design is Pout_an1s = – 22.3 dBm showing a loss factor of 19.7
dB resulted from the second harmonic frequency generation. The loss factor is
the price to pay for the second harmonic frequency design. The additional loss
of the output power due to construction of the second harmonic frequency
design is found to be 6.8 dB, so that the effective output power which can be
generated at the second harmonic frequency is P2fo1s = – 48,8 dBm.
To see the antenna radiation pattern, Figures 6 and 7 show the electric field
pattern for both the fundamental and the second harmonic frequencies of the
single patch antenna; while Figure 8 shows the electric field pattern of the two-
106 A. Kurniawan, A. Hasyim & Y. Wahyu
Figure 7 E field pattern of the single patch antenna at the 2nd harmonic frequency.
Since in this work the patch antenna consists of two element array, the gain
increases theoretically by 3 dB. However, the simulation result shows that the
Realization of a Second Harmonic Antenna 107
gain measurement of the two-element patch antenna can generate the maximum
output power at Φ = 0 of P2fo2s = – 40 dBm, showing only a 2 dB array gain.
3 Antenna Measurement
3.1 Output power measurement
At the direction of Φ = 0o for the second harmonic frequency of 4.88 GHz, the
output power measurement PU = - 47.7 dBm as shown in Figure 9.
4.88 GHz
The difference of 8.9 dB between the simulation and the measurement results is
due to the accuracy and the shift of the S parameter resulted in fabrication of the
microstrip material. Fabrication of microstrip is performed using etching and
chemical processes. The dimension obtained from fabrication is not perfect due
to the limited accuracy that can be achieved within available facilities in the
laboratory.
2,435 GHz
2,441 GHz
Simulation result shows that the output power at fundamental frequency is Pfo1s
= - 87 dBm. Similar with the second harmonic frequency generation, the output
power of fundamental frequency obtained from measurement is found to be
approximately 23.31 dB below its level obtained from simulation.
The total output power of the active harmonic antenna is -50.9 dBm + (-110.31)
dBm = -50.89 dBm. Therefore, the loss factor due to second harmonic
frequency generation is – 22.29 dB + 50.89 dB = 28.6 dB. Therefore, the design
of second harmonic frequency is obtained by allowing the total loss of the
output power (power loss factor) of 28.6 dB.
Table 2 shows the output power of the two-element patch antenna array with
and without second frequency generation.
However, some side lobes and also back lobe can be observed in both elevation
(theta) and azimuth (phi) patterns. This irregularity of radiation pattern might be
caused by accuracy of fabrication and also by imperfectness of ground plane of
the microstrip material that constitutes the patch antenna array. As we can
observe that on the simulation a perfect conducting plane is assumed to be
perfect. Also the thickness reduction of dielectric and conducting plane of the
microstrip material during etching process is not taken into consideration in the
simulation. This might cause the difference in the characteristic of patch
antenna as the radiator. Also ground plane area is in fact not perfect. Imperfect
ground plane might cause some parasitic effects to the radiation characteristics
of the patch antenna.
0
-2
-4
-6
-8
-10
-12
-14
. -16 (a)
-5
-10
-15
-20
-25
-30 (b)
2.2
2
SW R
1.8
1.6
1.4
1.2
1
4.8 4.82 4.84 4.86 4.88 4.9 4.92 4.94 4.96 4.98 5
Frequency [GHz]
Figure 12 VSWR and bandwidth measurement of active second harmonic
antenna.
From Figure 12, the value of VSWR = 1.5 at the second harmonic frequency
can produce a bandwidth of approximately 75 MHz; while with a rather loose
requirement of VSWR = 2 the bandwidth obtained can achieve almost 150
MHz. The requirement of VSWR on wireless LAN application, especially for
ISM band application, is specified to be between 1.5 and 2. Therefore the
second harmonic antenna designed and implemented in this work satisfies the
requirement of WLAN application.
4 Conclusion
Wireless application of the ISM band at 2,4 GHz can be extended using
harmonic antenna design, so that the system can be operated at its harmonic
frequencies. The second harmonic frequency design has been investigated using
active antenna and make it possible to be implemented to operate at 4.8 GHz.
Harmonic frequency generation at antenna subsystem is beneficial, in that a
higher operating frequency of wireless communication systems can be deployed
using lower frequency devices. The system can be realized using active antenna
112 A. Kurniawan, A. Hasyim & Y. Wahyu
5 Further Work
To further extend its application, the third harmonic antenna design can be an
alternative further research direction. In addition, to exploit the availability of
unlicensed band for WLAN applications, the use of 5,2 – 5,8 GHz frequency
band of Unlicensed for National Information Infrastructure (UNII) together
with the ISM at 2.4 GHz band can be investigated using a dual band antenna
design. Therefore, a dual band antenna design at those frequency bands can be
another interesting further research direction.
Reference
[1] Pramudita, A. & Wahyu, Y., Antena Aktif pada Harmonik Kedua, in
Proceedings of the 6th SITIA Conference, Surabaya, May 2005.
[2] Alexanian, A., Chang, H.C. & York, R. A., Enhanced scanning range in
coupled oscillation arrays utilizing frequency multipliers, in Proceedings
IEEE APS Symp. Dig., Newport Beach, CA, July. 1995, pp.1308-1310.
Realization of a Second Harmonic Antenna 113