ESc201 : Introducton to Electronics

Transistors

Dept. of Electrical Engineering

IIT Kanpur

1
 RECAP Ideal Transistor Characteristics
I0
I0
I1
+ +
+ +
Vi V0 gmvi
Vi V0
- -
- -

I0
I0
Vi Vi3
Vi2
Vi1
V0

2
 I0 I0

Ideal transistor Vi
Vi3
Vi2
RECAP
Vi1
V0

I0
I0
Device X Vi3
Vi2
Vi Vi1
V V0

Device Y I0
I0
Vi3
Vi2
Vi Vi1
V
Vsat V0
How do we use elements such as X, Y etc to make amplifiers? 3
Amplifier Schematic for Device Y RECAP
I0
I0
Vi3
I02 Q-point Q-point
Vi2
Vi Vi1
V Vi2
Vsat V0

VCC

RC
CC

CB v0

+ Y
RL
vi
RB
-
vs
VB

4
Device Z RECAP
I0
Simple Solution
Vi
V=1V VCC

RC
I0 CC
Vi=1.03V R1 v0
CB
Vi=1.02V
10mA Vi=1.01V
+ Z
CE RL
0.2V 2V V0 vi
R2
-
vs RE

5
Bipolar Junction Transistor (BJT)

E
N P N C E P
P N C

B B
C C
E: Emitter
B E: Emitter B B: Base
B: Base C: Collector
E C: Collector E

NPN PNP
Dc current-voltage Characteristics of NPN Transistor

C I C  I B I E
B Two independent currents
Let them be IB and IC
E

There can be three voltages: VBE , VBC , VCE

Again, only two are independent. Often VBE and VCE are chosen.

VBE VB  VE ;VBC VB  VC ;VCE VC  VE

VBC VBE  VCE VCE VBE  VBC

Dc current-voltage Characteristics of NPN Transistor
C
B
( I C , I B ) ; (VBE , VCE )
E

IB4

IB3

IB2

IB1
Modes of operation
C
+ VBC-
B
C VBC
E
N Reverse Active Saturation
(R,F) (F,F)

B P
VBE

N Cut Off Forward Active

(R,R) (F,R)
E
+ VBE -
 NPN Transistor Modes of Operation

Voltage B-E Junction bias B-C Junction bias Mode

E < B < C Forward Reverse Forward Active

E < B > C Forward Forward Saturation
E > B < C Reverse Reverse Cut-Off
E > B > C Reverse Forward Reverse-Active
 IC
=β F
IB
IB4 40A

7.6 mA
Forward Active Mode IB3 30A

5.6 mA
IB2 20A
3.7 mA
IB1 10A
1.7 mA

~0.2V
Forward Active Mode
Base Emitter (BE) junction is forward biased and Base
Collector (BC) junction is reverse biased
5V IC
C
Current Gain
N IC
=β F
B IB
P
0.7V
IB
+
N
VBE 0.7V
E
IE
 Forward Active Mode
IB IC
C B C
B F.IB

E
E

N IB IC
B
B C
P
0.7V F.IB
+
N

E
E
 VBC

Reverse Active Saturation

(R,F) (F,F)

VBE

Cut Off Forward Active

(R,R) (F,R)

I B 0; I C 0; I E 0

Transistor acts like an open circuit

Saturation Mode

Both BE and BC junctions are forward biased

0.2V
C

N
VBE 0.7V
B
P VBC 0.5V
0.7V
IB

VBE  VBC 0.2V

+
N

E
IE
 I Csat
=β forced <β F
IB IC
=β F 40A
IB IB4

Saturation
IB3 30A

I Csat IB2 20A

IB1 10A
 IB IC
B C
VCEsat=0.2
IB4
Saturation
E IB3

IB2

IB1

IB IC
~0.2VB
C
0.7V VCEsat=0.2

E
PNP Transistor
C
E P N P C
B
B
E
VCB

Reverse Active Saturation

(R,F) (F,F) IB IC
B C
F.IB

VEB

E
Cut Off Forward Active
(R,R) (F,R)
Mid-sem Solutions Discussion