FISICA DE SEMICONDUCTORES

DISPOSOTIVOS POLARES BIPOLARES

Y ESPECIALES

GRUPO: 299002_10

Jhon Alexander Cuervo Barragan

Código: 1072592374

TUTOR: IVAN CAMILO NIETO

NOVIEMBRE DEL 2017

UNIVERSIDAD NACIONAL ABIERTA Y A DISTANCIA UNAD

Escuela de Ciencias Básicas, Tecnología e Ingeniería
Física de Semiconductores
DIODO DE POTENCIA:
They are unidirectional switches of p-n structure that allows the flow of current in one
direction only.

Características.
Significant component of higher power (greater Area).
It consists of a junction and an intermediary N region with low doping. It can withstand high
reverse voltage. It can withstand voltages rupture of Kilo volt (KV) and currents of kilo
Amperes (KA).
Not only has no control terminal you can reverse voltage anode - cathode.
Transitional arrangements highlights of two phenomena: recovery reverse and direct.
Existen varios tipos:
 Diode Schottky
 Diode fast recovery
 Diode rectifiers or line frequency.

THYRISTORS
Encompass a family of semiconductor devices working on switching, having in common a
4-layer structure in a PNPN sequence that works in a bistable way.CARACTERISTICAS
Switching from OFF to ON is performed by an external control signal.
Switching from ON to OFF occurs when the thyristor power is smaller than the current of
maintenance specific to each transistor.Existen varias clases.
 SCR
 TRIAC
 GTO
SCR
Rectifier controlled silicon, formed by four semiconductor layers in turn PNPN.
Features:
Has three terminals: anode (A), cathode (K) and the door (G).
Anode and cathode circulates the main stream and out the door he injects a current that causes
you to set another current to sense anode - cathode.
You should be fired to the State ON applying a pulse of positive current at the gate terminal.
Once it starts to drive it remains in State ON although the gate current disappears.
When the anode current is negative the SCR passed to lock status.
Static regime in three regions are distinguished: zone lock reverse ((V_AK<0), zona=""
de="" bloqueo="" directo="" (v_ak="">0 sin disparo), driving area (V_AK > 0 with
shot).</0),> )
There are five ways for SCR enters conduction:Disparo por Tensión Excesiva,

1. Door impulse firing (the most widely used is)

2. Tripping by voltage derivative
3. By Temperature
4. By Luz
TRIAC

Three-way bidirectional thyristor that can be triggered with door tensions of both signs.
Characteristics:
• It behaves as like two SCR in anti parallel.
• The voltages and currents necessary to produce the transition of the TRIAC are different
depending on the polarities of applied voltages.
• Very Reduced Power Control.
• It has a maximum voltage of 1000V,
• Maximum current of 15A,
• 15KW power And frequencies of 50 - 60 Hz of the single-phase network.
GTO
It is a thyristor with external blocking capacity. The door controls the passage from blocking
to driving and vice versa. Characteristics:
• It has a four-layer structure, it can enter into conduction and be blocked by suitable signals
in the door G terminal.
• Its trigger mechanism is similar to that of the SCR.
• May not have the ability to block inverse voltages.
• Positive current: OFF - ON
• Negative current: ON - OFF (stop driving)

TRANSISTORS
In the area of power they are generally used as switches. They have the advantage of being
totally controlled. There are different types of transistors:
 BJT
 MOSFET
 IGBT
BJT
More commonly known as a Bipolar Union Transistor, they are power controlled switches.

TRANSISTORS
In the area of power they are generally used as switches. They have the advantage of being
totally controlled.
There are different types of transistors:
 BJT
 MOSFET
 IGBT

BJT
More commonly known as a Bipolar Union Transistor, they are power controlled switches.

Characteristics:
• There are two fundamental types NPN and PNP.
• They are formed by Base, Collector and Emitter.
• They can withstand high stresses since the intermediate layer of the collector has a low
concentration of impurities.
• They are easy to control by the Base terminal, but they consume more energy than the
SCRs.
• It has three operating zones: CUT, ACTIVE and SATURATION.
• Transistors are usually used in Darlintong configuration to increase the total gain of the
transistor
Advantage:
Low voltage drop in saturation.

Disadvantage:
Little profit with big v / i.

MOSFET
They are voltage controlled transistors. There are two basic types, the N channel and the P
channel.
Characteristics:
• They are formed by the Drain (D), Door (G) and Source (F).
• They have three well-founded work areas: COURT, OHMICA and SATURATION.

Disadvantages: Power quite reduced, the resistance in conduction varies a lot with the
temperature and the current that circulates so it does not have an almost ideal switch behavior.

Advantages: they are the fastest transistors that exist, they are used in applications with high
switching speeds; the most relevant is the ease of control.

IGBT
It is a hybrid device that combines the ease of triggering of the MOSFET with small losses
in driving the BJT.

characteristics
• It is formed by the collector (C), Gate (G) and Emitter (E).
• It has a relatively simple voltage control since the door is isolated from the device.
• It allows working in medium frequency ranges, controlling quite high powers.
• Presents a parasitic thyristor that prevents its triggering due to problems related to this
element.
• It is inherently faster than the BJT but its switching speed is lower than that of the MOSFET.
• It has a high input impedance like the MOSFET.
We can consider in principle five types of unipolar devices:

a) Metal-semiconductor contact. It is the union of a metal with a semiconductor (Shottky

barrier).
Equivalent to an abrupt p-n junction to the side. In addition, in the case of strongly doped
semiconductors, this type of union is the most important way to make an ohmic contact.

b) The field effect transistor (JFET). It is a resistance controlled by tension. It bases its
operation on an inversely polarized p-n junction that is responsible for controlling the
resistance existing between two ohmic contacts, or what is the same, the current flow
through it.

c) The MESFET transistor (Metal Semiconductor Field Effect Transistor). Identical to the
JFET but uses a rectifier-type semiconductor metal contact instead of a p-n junction.

d) The MOS diode (Metal-Oxide Semiconductor Diode).

Component widely used in the study of semiconductor surfaces, of great application in
CCD devices.

e) The MOSFET transistor (Metal-Oxide Semiconductor Field-Effect Transistor).

It constitutes a MOS diode with two p-n junctions adjacent to the MOS diode. Of similar
electrical properties that the JFET and MESFET transistors is very useful in the
manufacture of microprocessors, semiconductor memories, etc.

With respect to bipolar devices, unipolar devices have very specific characteristics and in
many cases are advantages over bipolar devices:

• Simpler manufacturing. They occupy less space and, therefore, present a greater capacity
for integration.
• Lower consumption than the bipolar (of the order of nanowatts for the MOS compared to
the milliwatts of the BJT).
• More economical.
• High input impedance (of the order of 1010 ohms).
• It is the optimal element for the production of memories.
• It has less noise than the bipolar.

Differences between unipolar and bipolar transistors.

1-. Its operation depends solely on the circulation of majority carriers. It is, therefore, a
unipolar device (a single type of carriers).
2-. Its manufacture is simpler, require less space for integration and allow greater density of
components.
3-. They can be connected as load resistors, allowing circuits formed only with transistors