November 3, 2005
Contents:
Reading assignment:
Announcements:
Key questions
qV
I = Io(exp − 1)
kT
Fp
p n
Fn
Fp
p n
Fn
I log |I|
0.43 q
kT
=60 mV/dec @ 300K
Io
0
0 V 0 V
Io
linear scale semilogarithmic scale
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 16-6
1 Dn 1 Dp qV
I = qAn2i ( + )(exp − 1)
Na Wp − xp Nd Wn − xn kT
n2i
•I∝ N − 1) ≡ excess minority carrier concen-
(exp qV
kT
T
ratio at edges
tration ges of
o SCR
n2i
– in forward bias: I ∝ exp qV kT : the more carrier
N
are injected, the more current flows
n2i
– in reverse bias: I ∝ −N :
the minority carrier
concentration drops to negligible values and the
current saturates
q(V + v)
I + i = Io[exp − 1]
kT
qV qv qV qv
I + i = Io(exp exp − 1) Io [exp (1 + ) − 1]
kT kT kT kT
qV qV qv
= Io(exp − 1) + Io(exp )
kT kT kT
Then:
q(I + Io)
i= v
kT
q(I + Io)
gd =
kT
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 16-9
gd
qI
gd
kT
gd Cj
Cjo
Cj =
1 − φVB
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 16-11
log p, n
Na
po Nd
no
p
n
ni2
ni2 Nd
Na
0 x
n(xn)
n(x)
qNn
Nd
p(xn)
p(x)
qPn
ni2
Nd
xn x
0 Wn
Mathematically:
qP n = qA 12 p (xn)(Wn − xn) =
2
Wn −xn ni
= qA 2 Nd (exp qV
kT − 1) = −qNn
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 16-13
n n-QNR V
+-
n(xn) -
∆qNn=-∆qPn I
n(x) p n
Nd
p
p(xn) + ∆qPn
p(x)
ni2
Nd
xn x
0 Wn
dqP n
Cdn = |V
dV
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 16-14
(Wn − xn)2
τT p =
2Dp
Then:
qP n = τT p Ip
and
q
Cdn τT pIp
kT
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 16-15
qNp = τT nIn
q
Cdp τT nIn
kT
where τT n is transit time of electrons through p-QNR:
(Wp − xp)2
τT n =
2Dn
qP n + qNp = τT nIn + τT p Ip = τT I
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 16-16
gd Cj Cd
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 16-17
Cd
C
Cj
2Cjo
0
0 φB/2 V
• Cj √
dominates in reverse bias and small forward bias
(∼ 1/ φB − V )
Key conclusions
Cd ∼ eqV /kT
Cd ∼ I