A Radiation Hardened

SONOS 1Mb EEPROM

for Space Applications
Dennis Adams1, Michael Fitzpatrick1, Erica Folk1,
William Hand1, Randall D. Lewis1, Patrick Shea1,
Joseph Smith1, Phillip Peyton1, James Sheehy2,
Jeffrey Dame2, Gary Grant2, James Murray3,
Marvin White4 , Gan Wang4

1 Northrop Grumman Corporation, Baltimore, MD

2 Amtec Corporation, Huntsville, AL
3 Sandia National Labs, Albuquerque, NM
4 Lehigh University, Bethlehem, PA

March 20, 2008

0 3/26/2008 9:22 AM Copyright 2007 Northrop Grumman Corporation
 Outline

ƒ 1Mb EEPROM Overview

ƒ SONOS stack endurance cycling
ƒ Memory retention study
ƒ Qualification testing results
ƒ Summary

1 3/26/2008 9:22 AM Copyright 2007 Northrop Grumman Corporation

 The NGC EEPROM Team

ƒ Northrop Grumman (Baltimore,MD) – wafer fabrication;

device screening & test; product sales

ƒ Amtec (Huntsville,AL) – device radiation effects analysis

& radiation test; program management

ƒ Sandia (Albuquerque,NM) – EEPROM design

ƒ Lehigh University (Bethlehem, PA) – SONOS “stack”
analysis and characterization

2 3/26/2008 9:22 AM Copyright 2007 Northrop Grumman Corporation

 Proven Rad Hard NVM Technology

Part Number: W28C64 W28C256 W28C0108

Organization: 8k x 8 32k x 8 128k x 8
Process: 1.25µm CMOS/SONOS 1.25µm CMOS/SONOS 0.8µm CMOS/SONOS
Memory Cell: 4T 4T 2T
Die Size: 6.5mm x 6.5 mm 8mm x 10.2 mm 8.3mm x 10.6 mm
Write Voltage: 10V 10V 7.5V
Write Time: 10 msec per page 10 msec per page 100 msec per page
Read Access: 250 nsec 250 nsec 250 nsec
Retention: 10 years @ 1E4 cycles 10 years @ 1E4 cycles 10 years @ 1E4 cycles
Production: 2Q93 2Q00 2Q08

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 Commercial Compatibility

INHB 1 36 CPE
CCCP 2 35 VDD
A16 3 34 A14
A15 4 33 NC
A12 5 32 WEB
A7 6 31 A13
A6 7 30 A8
A5 8 29 A9
A4 9 28 A11
A3 10 27 OEB W28C0108F Rad Hard 1Mb EEPROM
A2 11 26 A10
A1 12 25 CEB
A0 13 24 D7
D0 14 23 D6 The inner 32 pins are
JEDEC compatible with
D1 15 22 D5
D2 16 21 D4
VSS 17 20 D3 commercial parts such
CLK 18 19 VWR
as the Renesas
36 Pin Flatpack HN58C1001

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 Rad Hard 1Mb EEPROM Characteristics
Parameter Specification
Organization 128Kb x 8
Power Supplies +3.3 V (Vdd), -4.2 V (Vwr)
Program Time (page) 100 ms
Endurance
Write 1E4 cycles (min)
Read Infinite cycles
Read Access Time 250 ns
Retention >10 yrs @ +125° C
Temperature -55 to +125C
Power Dissipation
Standby 1 mW
Read 60 mW
Write 40 mW
Radiation
ƒ NGC 1Mb EEPROM has been
Total Dose 300 krad(Si) successfully characterized in all
Prompt Dose Upset (logic) >1E8 rad(Si)/s radiation environments and has
Prompt Dose Upset (memory) >1E12 rad(Si)/s successfully passed life testing
Prompt Dose Survivability >1E12 rad(Si)/s
SEU (logic) 40 MeV-cm2/mg
(1000 hour @ +150° C).
SEU (memory) >94 MeV-cm2/mg
Latch-up None

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 Summary of 1M EEPROM Radiation Test Results
Parameter Specification Measured
TID [krad(Si)] 300 >500
Prompt Dose -Transient >1E8 2.9E8
[rad(Si)/s] Data recovered in one read
cycle (1600 nsec)

Prompt Dose – Memory >1E12 >6E12

[rad(Si)/s]
Prompt Dose – Survivability >1E12 >6E12
[rad(Si)/s]
SEU – Logic 40 >122
(MeV-cm2/mg) (Au, 45 degree Angle)

SEU – Memory >94 >122

(MeV-cm2/mg) (Au, 45 degree Angle)

Latch-up None None

6 3/26/2008 9:22 AM Copyright 2007 Northrop Grumman Corporation

 SONOS Stack Endurance Cycling
2004 Process:
NGC Lot # 64017-1 Array
1000 NSONOS 5.0 x 0.8μm Transistors
“Optimized Process”
0.00
Virgin Device
1E+4 Cycles
2007 process:
Threshold Voltage (V)

-0.50 1E+5 Cycles

1E+6 Cycles
NSONOS 1000 x 5 um x 0.8 um Transistor Array
-1.00
1 cycle = +7.0 V / 2.5 msec
Package 65512-7-10
plus -7.0 V / 7.5 msec 0.5
-1.50
("10 msec cycling")
Virgin device
-2.00 1E4 cycles
1 Year 0.0
-2.50
10 Years 1E5 cycles
1E6 cycles
Threshold Voltage (V)
1E+00 1E+02 1E+04 1E+06 1E+08

Retention Time (s) -0.5 1E7 cycles

-1.0

10 million cycles
-1.5 0.8 V
1 cycle = +7.5 V / 25 msec
plus -7.5 V / 75 msec
-2.0 ("100 msec cycling")

10 years
-2.5
1.E+01 1.E+02 1.E+03 1.E+04 1.E+05 1.E+06 1.E+07 1.E+08 1.E+09
Time (s)

“Optimized process” has minimal degradation

after 10 million cycles
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 1Mb EEPROM Activation Energy Study
ƒ 1M EEPROM parts (59) characterized @ +225/+250/+300°
C for memory retention
ƒ Parts programmed once at each temperature (+7.5 V / 25
msec, -7.5 V / 75 msec, topological checkerboard)
ƒ Arrhenius equation calculations used to determine the
1M EEPROM retention activation energy
ƒ MTF =k eEa/kT
ƒ Ea =1.68 eV for NGC 1M EEPROM retention
ƒ NGC uses an aggressive screen to guarantee >10 year
memory retention on all EEPROM products (2 days @
+250° C – all die)
ƒ NSONOS transistor data taken at +250° C to quantify
SONOS transistor level retention acceleration effects
ƒ Key finding – Based on this data, NGC 1Mb EEPROM
product will have >>100 year memory retention at +125°C
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 1Mb EEPROM Activation Energy Study
99% Arrhenius/Lognormal
+125 C
+300 C +250 C +225 C
(projected)
125C
225C
Fail = 34 | Suspend = 25
250C
Fail = 38 | Suspend = 8
Cumulative 1Mb EEPROM failures (%)

300C
Fail = 58 | Suspend = 0
CL: 95% 1-sided
Ea = 1.68 eV; sigma = 0.68

50%

+125 C
(projected)
10% 0.1% failures at 1.6E5
days (440 years)
5% 440
years 0.1% failures at 9.3E4
days (250 years) at
95% LL confidence
1% 250
years
0.5%
25
8
x

0.1%
0.01 0.10 1 10 100 1000 10000 1E+5 1E+6 1E+7
Time (days)
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 1Mb EEPROM Activation Energy Study
+125 C
1E+7 Arrhenius/Lognormal

3500 years Median life

1E+6
2100
years Fail = 130 | Suspend = 33
CL: 95% 1-sided
Median 1M EEPROM Retention Life (days)

1E+5 Ea = 1.68; sigma = 0.68

10000 For 125C operating temp:

Median life = 3500 years
95% LL confidence
1000 Median life = 2100 years

100 +225 C 70 days

10 +250 C 10 days

1
+300 C 0.5 days

0.1
100 125 145 190 235 280 325
Operating Temperature (C)
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 SONOS Memory Retention Screen Acceleration Effects
NSONOS transistor array - 1000 x 4 um x 0.8 um (7 parts)
0.5
+7.5 V / 25 msec 2 2600
0.0 days years
@+250C 10 years
@+125C
-0.5
Threshold Voltage (V)

+250 C +125 C
-1.0

-1.5 Calculated
1.73E3 sec
+250 C Ea = 1.86 eV
-2.0
+125 C 8E10 sec

-2.5

-7.5 V / 75 msec Lehigh University Data

-3.0
1.E-02 1.E+00 1.E+02 1.E+04 1.E+06 1.E+08 1.E+10 1.E+12 1.E+14

Time (s)

2 days @+250°C retention screen is equivalent to

2600 years @ +125° C
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 1Mb Qualification Testing Results
ƒ Life Test
ƒ 10 device sample (1Mbit EEPROM)
ƒ 1000 hr burn-in at 150°C
ƒ All devices passed post 1,000 hr electrical
testing
ƒ Tests were performed at 25°C, -55°C,
and +125°C

ƒ Total Dose Radiation

ƒ 6 device sample (1Mbit EEPROM)
ƒ 3 devices 300 Krad
ƒ 3 devices 1Mrad
ƒ All devices passed post radiation testing

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 1Mb EEPROM Standby Supply Current
0.5

0.4 Temperature Life test Total Dose

IDE1 (mA)

0.3
Part specification = < 2 mA
0.2

0.1

0.0
-55 25 125 Post Burnin 1000 hrs @ +150C 300 krad 1 Mrad
Temperature(oC) Test_Group RadLevel

Negligible change with 1000 hour @ +150° C life test

or 1 Mrad(Si) total ionizing dose for NGC 1Mb EEPROM

13 3/26/2008 9:22 AM Copyright 2007 Northrop Grumman Corporation

 1M EEPROM Chip Enable Access Time
200

150
Tce (nS)

100 Part specification =

< 250 nsec
50
Temperature Life test Total Dose

0
-55 25 125 Post Burnin 1000 hrs @ +150C 300 krad 1 Mrad
Temperature (oC) Test_Group RadLevel

Minimal change in NGC 1Mb EEPROM access

time with life test and with 300 krads

14 3/26/2008 9:22 AM Copyright 2007 Northrop Grumman Corporation

 Summary
ƒ A 1Mb (128k x 8) SONOS EEPROM has completed
qualification testing
ƒ Recent process optimization has resulted in significant
improvements in SONOS retention and endurance
ƒ Extensive 1Mb activation energy characterization
indicates >>100 year memory retention at +125° C
ƒ Device has been fully characterized in all radiation
environments
ƒ Device has passed 1000 hour @ +150° C life tests;
– no reliability issues seen with this part
ƒ Engineering parts are available NOW;
- Production parts available 2Q ‘08

15 3/26/2008 9:22 AM Copyright 2007 Northrop Grumman Corporation

 Acknowledgements
We would like to thank the
U. S. Army Space and Missile Defense Command,
U. S. Air Force Space and Missile Systems
Center,
NAVY Strategic Systems Program Office,
the Missile Defense Agency,
National Science Foundation and NASA GSFC
for their past and continued support of these
programs.
16 3/26/2008 9:22 AM Copyright 2007 Northrop Grumman Corporation
 “You can be sure if it’s ……….

Northrop
NorthropGrumman’s
Grumman’sRad-Hard
Rad-HardEEPROM
EEPROMTechnology
Technology
2Kb
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deviceprogrammed
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inDecember
December1976
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droppedbits
bitsas
asof
ofOctober
October18,
18,2007
2007––31
31 years
yearsof
ofretention!!
retention!!

17 3/26/2008 9:22 AM Copyright 2007 Northrop Grumman Corporation