Dislocations
3
Imperfections in Crystals
Vacancy
• Point Defects
– Vacancies
– Interstitial
• All crystals have equilibrium
concentrations of vacancies Interstitial
Qv
N v N exp
RT
Nv – number of vacancies per unit volume
N – number of atoms per unit volume As T increases, Nv increases
Qv – activation energy for vacancy formation
Just below melting point,
Nv/N ~ 10-4, (1 in 10,000)
APSC278 by Warren Poole and Anoush Poursartip 4
Effect of Vacancies
• Allows atoms to move in the
solid
• Process is known as
“diffusion”
• Plays an important role in
– Creep
– Recrystallization
– Grain Growth
– Phase transformations
• Allows atoms to re-arrange
themselves to obtain lower
energy configurations
R cos cos
R – resolved shear stress
– applied stress
APSC278 by Warren Poole and Anoush Poursartip 11
Slip Systems for Different Crystal
Structures
• FCC and BCC crystal structures have a relatively large number of slip
systems, so they are quite ductile. Conversely, HCP structures can be
quite brittle.
APSC278 by Warren Poole and Anoush Poursartip 12
Breaking of atomic Bonds
Caterpillar analogy
Carpet analogy
Deformed grains
r = 105 km/cm3
30
Problem 7.33
7.33 Experimentally, it has been observed for single crystals of a number of metals that the critical resolved shear
stress τcrss is a function of the dislocation density ρD as
t crss = t 0 + A rD
where τ0 and A are constants. For copper, the critical resolved shear stress is 0.69 MPa (100 psi) at a dislocation
density of 104 mm–2. If it is known that the value of τ0 for copper is 0.069 MPa (10 psi), compute τcrss at a dislocation
density of 106 mm–2.