Anda di halaman 1dari 7

Advanced Power MOSFET IRF540A

FEATURES
BVDSS = 100 V
Avalanche Rugged Technology
Rugged Gate Oxide Technology
RDS(on) = 0.052 Ω
Lower Input Capacitance ID = 28 A
Improved Gate Charge
Extended Safe Operating Area
Ο
175 C Operating Temperature
TO-220
Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V
Lower RDS(ON) : 0.041 Ω (Typ.) 1
2
3

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings


Symbol Characteristic Value Units
VDSS Drain-to-Source Voltage 100 V
Continuous Drain Current (TC=25 C) Ο
28
ID A
Continuous Drain Current (TC=100 C) Ο
19.8
IDM Drain Current-Pulsed O
1 110 A
VGS Gate-to-Source Voltage +
_ 20 V
EAS Single Pulsed Avalanche Energy O
2 523 mJ
IAR Avalanche Current O1 28 A
EAR Repetitive Avalanche Energy O1 10.7 mJ
dv/dt Peak Diode Recovery dv/dt O3 6.5 V/ns
Total Power Dissipation (TC=25 C )
Ο
107 W
PD
Linear Derating Factor 0.71 W/ C Ο

Operating Junction and


TJ , TSTG - 55 to +175
Storage Temperature Range Ο
C
Maximum Lead Temp. for Soldering
TL 300
Purposes, 1/8” from case for 5-seconds

Thermal Resistance
Symbol Characteristic Typ. Max. Units
R θJC Junction-to-Case -- 1.4
R θCS Case-to-Sink 0.5 -- Ο
C /W
R θJA Junction-to-Ambient -- 62.5

Rev. B

©1999 Fairchild Semiconductor Corporation

This datasheet has been downloaded from http://www.digchip.com at this page


N-CHANNEL
IRF540A POWER MOSFET

Electrical Characteristics (TC=25 C unless otherwise specified)


Ο

Symbol Characteristic Min. Typ. Max. Units Test Condition


BVDSS Drain-Source Breakdown Voltage 100 -- -- V VGS=0V,ID=250 µ A
∆ BV/ ∆TJ Breakdown Voltage Temp. Coeff. -- 0.11 -- V C Ο
ID=250 µ A See Fig 7
VGS(th) Gate Threshold Voltage 2.0 -- 4.0 V VDS=5V,ID=250 µA
Gate-Source Leakage , Forward -- -- 100 VGS=20V
IGSS nA
Gate-Source Leakage , Reverse -- -- -100 VGS=-20V
-- -- 10 VDS=100V
IDSS Drain-to-Source Leakage Current µA Ο
-- -- 100 VDS=80V,TC=150 C
Static Drain-Source
RDS(on) -- -- 0.052 Ω VGS=10V,ID=14A O
4
On-State Resistance
gfs Forward Transconductance -- 22.56 -- Ω VDS=40V,ID=14A O
4

Ciss Input Capacitance -- 1320 1710


VGS=0V,VDS=25V,f =1MHz
Coss Output Capacitance -- 325 380 pF
See Fig 5
Crss Reverse Transfer Capacitance -- 148 170
td(on) Turn-On Delay Time -- 18 50
VDD=50V,ID=28A,
tr Rise Time -- 18 50
ns RG=9.1 Ω
td(off) Turn-Off Delay Time -- 90 180
tf --
See Fig 13 O
4 O
5
Fall Time 56 120
Qg Total Gate Charge -- 60 78 VDS=80V,VGS=10V,
Qgs Gate-Source Charge -- 10.8 -- nC ID=28A
Qgd Gate-Drain(“Miller”) Charge -- 27.9 -- See Fig 6 & Fig 12 O
4 O
5

Source-Drain Diode Ratings and Characteristics


Symbol Characteristic Min. Typ. Max. Units Test Condition
IS Continuous Source Current -- -- 28 Integral reverse pn-diode
A
ISM Pulsed-Source Current O
1 -- -- 110 in the MOSFET
VSD Diode Forward Voltage O
4 -- -- 1.5 V Ο
TJ=25 C ,IS=28A,VGS=0V
trr Reverse Recovery Time -- 132 -- ns Ο
TJ=25 C ,IF=28A
Qrr Reverse Recovery Charge -- 0.63 -- µC diF/dt=100A/ µs O
4

Notes ;
O Repetitive Rating : Pulse Width Limited by Maximum Junction
1 Temperature
L=1mH, I AS=28A, V DD=25V, R G=27 Ω, Starting T J =25 C
o
O2

O3 ISD <_ 28A, di/dt <_ 400A/ µs, V DD<_ BVDSS , Starting T J =25 oC
O4 Pulse Test : Pulse Width = 250 µs, Duty Cycle < _2%
O5 Essentially Independent of Operating Temperature
N-CHANNEL
POWER MOSFET IRF540A
Fig 1. Output Characteristics Fig 2. Transfer Characteristics
102 102
VGS
Top : 15V
[A]

[A]
10 V
8.0 V
7.0 V
ID , Drain Current

ID , Drain Current
6.0 V
5.5 V 175 oC
5.0 V
Bottom : 4.5 V
101
101

25 oC
@ Notes :
1. VGS = 0 V
@ Notes : 2. VDS = 40 V
- 55 oC
1. 250 µs Pulse Test
3. 250 µs Pulse Test
100 2. TC = 25 oC
100
10-1 100 101 2 4 6 8 10
VDS , Drain-Source Voltage [V] VGS , Gate-Source Voltage [V]
[A]

Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward Voltage
Drain-Source On-Resistance

0.08
102
IDR , Reverse Drain Current

0.06 VGS = 10 V
RDS(on) , [Ω]

0.04 101

VGS = 20 V
0.02
@ Notes :
175 oC
1. VGS = 0 V
@ Note : TJ = 25 oC 25 oC 2. 250 µs Pulse Test

0.00 100
0 30 60 90 120 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
ID , Drain Current [A] VSD , Source-Drain Voltage [V]

Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage
2500
[V]

Ciss= Cgs+ Cgd ( Cds= shorted )


Coss= Cds+ Cgd VDS = 20 V
10
[pF]

2000 Crss= Cgd


VGS , Gate-Source Voltage

C iss VDS = 50 V

VDS = 80 V
Capacitance

1500
C oss

1000 5
@ Notes :
1. VGS = 0 V
C rss 2. f = 1 MHz
500

@ Notes : ID =28.0 A
00 0
10 101 0 10 20 30 40 50 60 70
VDS , Drain-Source Voltage [V] QG , Total Gate Charge [nC]
N-CHANNEL
IRF540A POWER MOSFET
Drain-Source Breakdown Voltage

Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature


1.2 3.0

Drain-Source On-Resistance
BVDSS , (Normalized)

RDS(on) , (Normalized)
2.5
1.1
2.0

1.0 1.5

1.0
0.9 @ Notes : @ Notes :
1. VGS = 0 V 1. VGS = 10 V
0.5
2. ID = 250 µA 2. ID = 14.0 A

0.8 0.0
-75 -50 -25 0 25 50 75 100 125 150 175 200 -75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Junction Temperature [ oC] TJ , Junction Temperature [ oC]

Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Case Temperature
103 30
[A]

[A]

Operation in This Area


is Limited by R DS(on)
25
ID , Drain Current

ID , Drain Current

102 10 µs
100 µs 20
1 ms
10 ms
101 15
DC

10
@ Notes :
100
1. TC = 25 oC
5
2. TJ = 175 oC
3. Single Pulse
10-1 0
100 101 102 25 50 75 100 125 150 175
VDS , Drain-Source Voltage [V] Tc , Case Temperature [ oC]

Fig 11. Thermal Response


Thermal Response

100
D=0.5

@ Notes :
0.2
1. Zθ J C (t)=1.4 o C/W Max.
2. Duty Factor, D=t1 /t2
0.1
3. TJ M -TC =PD M *Zθ J C (t)
10- 1
0.05

PDM
Z JC(t) ,

0.02
0.01 single pulse t1
t2
θ

10- 2
10- 5 10- 4 10- 3 10- 2 10- 1 100 101
t 1 , Square Wave Pulse Duration [sec]
N-CHANNEL
POWER MOSFET IRF540A
Fig 12. Gate Charge Test Circuit & Waveform

“ Current Regulator ”
VGS
Same Type
50K Ω as DUT Qg
12V 200nF
300nF 10V

VDS
VGS Qgs Qgd

DUT
3mA
R1 R2

Current Sampling (I G) Current Sampling (I D)


Charge
Resistor Resistor

Fig 13. Resistive Switching Test Circuit & Waveforms

RL
Vout Vout
90%
Vin VDD
( 0.5 rated V DS )
RG
DUT 10%
Vin
10V
td(on) tr td(off)
tf
t on t off

Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms


BVDSS
LL 1
EAS = ---- LL IAS2 --------------------
VDS 2 BVDSS -- VDD
Vary tp to obtain ID BVDSS
required peak ID IAS

RG C VDD ID (t)
DUT
VDD VDS (t)
10V
tp tp Time
N-CHANNEL
IRF540A POWER MOSFET

Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

--

IS
L

Driver
VGS
RG Same Type
as DUT VDD

VGS • dv/dt controlled by “RG”


• IS controlled by Duty Factor “D”

Gate Pulse Width


VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current


IS
( DUT ) di/dt

IRM

Body Diode Reverse Current


VDS
( DUT ) Body Diode Recovery dv/dt

Vf VDD

Body Diode
Forward Voltage Drop
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™ ISOPLANAR™ UHC™


CoolFET™ MICROWIRE™ VCX™
CROSSVOLT™ POP™
E2CMOSTM PowerTrench™
FACT™ QS™
FACT Quiet Series™ Quiet Series™
FAST® SuperSOT™-3
FASTr™ SuperSOT™-6
GTO™ SuperSOT™-8
HiSeC™ TinyLogic™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER


NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and


supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product


that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.