Cathode (K) K

3.1 Zener Diode

Zener diode is a p-n junction diode that is +
designed to operate in the reverse V
breakdown region.
I
Z − Z
Anode (A) A
Two things happen when the reverse
Fig.3-1: Zener diode
breakdown voltage (VBR) is reached: symbol.
The diode current increases
drastically.

The reverse voltage (VR) across the

diode remains relatively constant. VBR

In other words, the voltage across a zener

diode operated in this region is relatively
constant over a range of reverse current
and nearly equal to its zener voltage (VZ)
rating.
Fig.: Zener diode voltage-curent (V-I) characteristic.
 Zener Diodes – Operating Range
A zener diode is much like
a normal diode, the
exception being is that it
is placed in the circuit in
reverse bias and operates
in reverse breakdown..
Note that its forward
characteristics are just
like a normal diode.

Operating range
 PN Junction (Diode)

 When N-type and P-type dopants are introduced side-by-

side in a semiconductor, a PN junction or a diode is formed.
Junction breakdown or reverse breakdown

• An applied reverse bias (voltage) will result in a small

current to flow through the device.
• At a particular high voltage value, which is called as
breakdown voltage VB, large currents start to flow. If there
is no current limiting resistor which is connected in series
to the diode, the diode will be destroyed. There are two
physical effects which cause this breakdown.

1) Zener breakdown is observed in highly doped p-n

junctions and occurs for voltages of about 5 V or less.

2) Avalanche breakdown is observed in less highly doped

p-n junctions.
 Reverse Breakdown

Increased reverse bias

eventually results in the diode
entering the breakdown
region, resulting in a sharp
increase in the diode current.
The voltage at which this
occurs is the breakdown
voltage, VZ.

2 V < VZ < 2000 V

Jaeger/Blalock Microelectronic Circuit Design Chap 3 -6

7/1/03 McGraw-Hill
 Reverse Breakdown Mechanisms (cont.)

Zener breakdown

 Zener breakdown occurs in heavily doped diodes.

 The heavy doping results in a very narrow depletion
region at the diode junction.
 Reverse bias leads to carriers with sufficient
energy to tunnel directly between conduction and
valence bands moving across the junction.
 Once the zener break down voltage is reached,
additional reverse bias leads to a rapidly increasing
reverse current.
Avalanche Breakdown
• Avalanche breakdown
mechanism occurs when
electrons and holes moving
through the DR and
acquire sufficient energy
from the electric field to
break a bond i.e. create
electron-hole pairs by
colliding with atomic
electrons within the • The newly created
depletion region. electrons and holes move
in opposite directions due
to the electric field and
thereby add to the existing
reverse bias current. This
is the most important
breakdown mechanism in
p-n junction.
 Reverse Breakdown Mechanisms

Avalanche Breakdown
 Si diodes with VZ greater than about 5.6 volts breakdown
according to an avalanche mechanism.
 As the electric field increases, accelerated carriers begin to
collide with fixed atoms.
 The new carriers also accelerate and ionize other atoms. This
process feeds on itself and leads to avalanche breakdown.
 Generally, Zener breakdown is dominant in diodes that
breakdown below 6V, and avalanche breakdown is dominant
in diodes that break down above 6V.

 The reverse-bias voltage that the diode will withstand before

reverse breakdown occurs is called the maximum reverse
blocking voltage of the diode, denoted VR.

 Avalanche breakdown voltage increases with

temperature, zener breakdown decreases with
temperature.