AOD446

N-Channel Enhancement Mode Field Effect Transistor

General Description Features

VDS (V) = 75V
The AOD446 uses advanced trench technology and ID = 10 A (VGS = 20V)
design to provide excellent RDS(ON) with low gate RDS(ON) < 130 mΩ (VGS = 20V)
charge. This device is suitable for use in PWM, load RDS(ON) < 140 mΩ (VGS = 10V)
switching and general purpose applications. RDS(ON) < 165 mΩ (VGS = 4.5V)

-RoHS Compliant 100% UIS Tested!

-Halogen Free* 100% Rg Tested!

TO252
DPAK
TopView D
Bottom View

G
D S D G S

S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter Symbol Maximum Units
Drain-Source Voltage VDS 75 V
Gate-Source Voltage VGS ±25 V
Continuous Drain TC=25°C 10
Current G TC=100°C ID 10 A
C
Pulsed Drain Current IDM 20
C
Avalanche Current IAR 10 A
C
Repetitive avalanche energy L=0.1mH EAR 5 mJ
TC=25°C 20
B
PD W
Power Dissipation TC=100°C 10
TA=25°C 2.1
A
PDSM W
Power Dissipation TA=70°C 1.3
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 17.4 30 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 50 60 °C/W
Maximum Junction-to-Case B Steady-State RθJC 4 7.5 °C/W

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AOD446

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=10mA, VGS=0V 75 V
VDS=60V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1 2.4 3 V
ID(ON) On state drain current VGS=10V, VDS=5V 20 A
VGS=20V, ID=5A 100 130
mΩ
TJ=125°C 180 220
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=5A 105 140 mΩ
VGS=4.5V, ID=2A 120 165 mΩ
gFS Forward Transconductance VDS=5V, ID=10A 9 S
VSD Diode Forward Voltage IS=1A, VGS=0V 0.79 1 V
IS Maximum Body-Diode Continuous Current 10 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 293 350 pF
Coss Output Capacitance VGS=0V, VDS=30V, f=1MHz 51 pF
Crss Reverse Transfer Capacitance 20 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 2.2 3 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 5.2 6.5 nC
Qg(4.5V) Total Gate Charge 2.46 3.5 nC
VGS=10V, VDS=37.5V, ID=5A
Qgs Gate Source Charge 1 nC
Qgd Gate Drain Charge 1.34 nC
tD(on) Turn-On DelayTime 4.6 ns
tr Turn-On Rise Time VGS=10V, VDS=37.5V, RL=7.5Ω, 2.3 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 14.7 ns
tf Turn-Off Fall Time 1.7 ns
trr Body Diode Reverse Recovery Time IF=5A, dI/dt=100A/µs 25 30 ns
Qrr Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs 27 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any a given application depends
on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev3: Sep 2008

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AOD446

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 10
10V
25
7V 8 VDS=5V
6V
20
5V 6
125°C
ID (A)

ID(A)
15
4.5V
4
10 VGS=4V 25°C

3.5V 2
5

0 0
0 1 2 3 4 5 2 2.5 3 3.5 4 4.5 5

VDS (Volts) VGS(Volts)

Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

220 2.2
VGS=20V, 5A
200
Normalized On-Resistance

180 VGS=10V, 5A
VGS=4.5V 1.8
RDS(ON) (mΩ)

160 1.6
VGS=4.5V, 2A
140 VGS=10V 1.4

120 1.2
VGS=20V
100 1

80 0.8
0 2 4
6 8 10 0 25 50 75 100 125 150 175
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Figure 4: On-Resistance vs. Junction Temperature
Voltage

260 1.0E+01
ID=5A
240
125° 1.0E+00
220
1.0E-01
200
RDS(ON) (mΩ)

IS (A)

125°
180 1.0E-02

160 25°
25° 1.0E-03
140
1.0E-04
120

100 1.0E-05
4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2

VGS (Volts) VSD (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

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AOD446

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 400

VDS=37.5V 350
8 Ciss
ID=5A
300

Capacitance (pF)
250
VGS (Volts)

6
200
4 150
Coss
100
2
50 Crss

0 0
0 2 4 6 0 5 10
15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 200
TJ(Max)=175°C,

10µs 160 TJ(Max)=175°C

RDS(ON) TC=25°C
10.0
100µs
Power (W)

limited
ID (Amps)

1ms 120

10ms 80
1.0
DC
40

0.1 0
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJC Normalized Transient

RθJC=7.5°C/W
Thermal Resistance

PD
0.1

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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AOD446

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

12 25

L⋅ ID
ID(A), Peak Avalanche Current

10 tA = 20
BV − VDD

Power Dissipation (W)

8
15
6
10
4

TA=25°C 5
2

0 0
0.00001 0.0001 0.001 0 25 50 75 100 125 150 175

Time in avalanche, tA (s) TCASE (°C)

Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note B)

12 50

10 TA=25°C
40
Current rating ID(A)

8
Power (W)

30
6
20
4

10
2

0 0
0 25 50 75 100 125 150 175 0.001 0.01 0.1 1 10 100 1000
TCASE (°C) Pulse Width (s)
Figure 14: Current De-rating (Note B) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

RθJA=60°C/W
Thermal Resistance

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

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AOD446

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge

Resistive Switching Test Circuit & Waveforms

RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs td(on) tr td(off) tf

ton toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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