WOLLEGA UNIVERSITY

Department of Physics
Instructor: Dr.M.Chandra Sekhar

Name: ID:
Test-3,4
Electronics-1
Applied-Physics-2-C

1 Answer all the Questions 20 × 1 = 20

1. A transistor is a ......... operated device.
A. both voltage and current B. current C. voltage D. none of the above

2. The output impedance of a transistor is ........

A. zero B. High C. low D. very low
3. IC = αIE + .........
A. IC B. IB C. ICEO D. ICBO

4. The emitter of a transistor is ........ doped.

A. heavily B. lightly C. moderately D. none of the above
5. The number of depletion layers in a transistor is ........
A. One B. Four C. Two D. Three
6. The value of β for a transistor is generally
A. above 500 B. between 20and 500 C. 1 D. less than 1
7. The gate of a JFET is ....... biased.
A. reverse as well as forward B. reverse C. forward D. none of the above
8. The input impedance of a JFET is ....... that of an ordinary transistor.
A. less than B. equal to C. more than D. none of the above
9. The input control parameter of a JFET is .......
A. gate voltage B. gate current C. drain voltage D. source voltage
10. In a FET, there are ............... pn junctions at the sides.
A. Four B. Three C. Two D. Five
11. The minimum value of voltage that turns the E-MOSFET ON is called:—————
12. The relation between β and α is:———————–
13. In an npn transistor, —————are the minority carriers.
14. ICEO = (........)ICBO

15. An n-channel D-MOSFET with a positive VGS is operating in ............... mode

16. If the reverse bias on the gate of a JFET is increased, then width of the conducting channel .......
17. A JFET has three terminals, namely .......
18. In a MOSFET negative gate operation is called ————-mode whereas positive-gate operation is known
as ———– mode.
19. ————–metal oxide is deposited over a small portion of the channel of MOSFET.
20. The collector-base junction in a transistor has —————– biased.

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