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ALI-1000 ATOMIC LAYER INJECTION

t
Deposi�on System

Working Principle
The most versa�le technology
for the deposi�on of large or PRE-INJECTION SYSTEM
fragile molecules in ultra-high (for loading liquid and driving gas)

vacuum environments.
solu�on

ALI uses a pulse valve to inject a small driving gas

amount of the solu�on or colloidal
suspension containing the material to be
deposited. A pre-injec�on system holds Ar
the solu�on at a desired driving-gas
pressure. When the solu�on is pulse
injected, it forms a spray. The solute
travels within the microdrops, as the
Carbon Nanotubes on Au(111). Courtesy of
NanoPhysics Lab, Centro de Física de Materiales (CSIC-UPV/EHU), Donos�a-San Sebas�án, Spain solvent evaporates and is finally
deposited on the sample. pAr
PULSE VALVE
The ALI so�ware and control unit give full

evapora�on of solvent
control over the injec�on process and
incorporate safety features to avoid
overloading the pumping system, and to
allow easily recovering working pressures
(ca. 10-8 mbar). deposi�on of
solute on sample

The system can be adapted to any UHV

set-up. Op�mal performance can be
achieved by adjus�ng pulse frequency INJECTION CHAMBER
and dura�on and the pressure in the pre- (UHV)
injec�on system.
ß-Carotene on Au(111). Courtesy of Franz Himpsel and Celia Rogero,
NanoPhysics Lab, Centro de Física de Materiales (CSIC-UPV/EHU), Donos�a-San Sebas�án, Spain

Features
User Friendly Safety Vacuum System Chemical Versa�lity
Designed for easy manipula�on Automa�c Pressure Control. The ALI Deposi�on system is
of the pre-injec�on system and So�ware incorporates safety compa�ble with a wide variety of
full control through so�ware features to avoid overload in the solvents.
(Windows). pumping system.

BihurCrystal
www.bihurcrystal.com BihurCrystal S.L.
info@bihurcrystal.com Pº Mikeletegi 83, 3º - local 7
+34 943 04 18 16 20009 Donost a-San Sebast an
Spain
 BihurCrystal bihurcrystal.com
ALI-1000
ATOMIC LAYER INJECTION

Technical Specifica�ons
PRE-INJECTION SYSTEM

Opera�onal pressure range 1 - 1100 mbar

Driving gas Argon (recommended)

Tube fi�ngs SS 316L / PFA

Solu�on deposit capacity 0.3 ml

ALI Deposi�on Unit

Solu�on molarity < 5 mM ALI-DS001

Pumping requirements Dry pump (gas-ballast recommended)

PULSE VALVE

Media Liquids and gases

Pulse dura�on min. 1 ms

ALI Control Unit (above)
Orifice diameter 0.1mm (0.004") and Sotware (below)
ALI-SCU001

UHV INJECTION CHAMBER

Primary pump Dry pump with gas ballast

Secondary pump Turbomolecular pump

Moun�ng flange CF40

Applica�ons
For more informa�on and examples
• Basic research in surface science
of applica�ons please visit
• Nanopar�cle and macromolecule deposi�on www.bihurcrystal.com

• Mass spectroscopy or contact us at

info@bihurcrystal.com
• Vacuum instrument tes�ng in extreme atmospheric condi�ons
for technical advice on how to
• Controlled evapora�on method for chemical synthesis integrate ALI into your system.

BihurCrystal
www.bihurcrystal.com BihurCrystal S.L.
info@bihurcrystal.com Pº Mikeletegi 83, 3º - local 7
+34 943 04 18 16 20009 Donost a-San Sebast an
Spain