SOG Blanket doping for SD ohmic contact (For EPI structure without ohmic cap layer
only)
(Take SOG out of the refrigerator, let it warm up to room temperature before using for
good coating reproducibility.)
1. Clean wafer with A/I/D, standard cleaning process.
115 ºC dehydration 4 mins.
3. Drive in diffusion:
RTA – 1100 °C for 5 mins in strict N2 ambient.
Ramp up rate 50 °C/sec, same down rate.
2. Resist:
HSQ 2500 RPM/1500 RPMS / 45 s (430 nm), 120 ℃ for 120 s
5. Curing
Post development bake @ 350 ℃ for 10 mins.
6. Isolation etch
RIE – BCl3/Ar (35/5) –25 mT – Bias 100 W – ICP 500 W – Temp 20 ℃ - 4 min 50 sec
(In steps of 90 s + 90 s + 90 s + 30 s)
Monitor the color of HSQ mask. Blue color indicates the thickness close to 100 nm.
7. HSQ stripping
HF (1:6 BOE) dip for 2 mins followed by DI rinse.
4. Contact:
Ti/Au (50/120) @ 0.7 Å/s
5. Lift-off:
Immerse in Acetone @ 65 ℃ for at least 4 hours. Gentle sonication in fresh acetone
followed by IPA/DI clean and N2 blow dry to complete lift-off.
6. Contact RTA:
520 ℃ - 1 min in N2 ambient.
4. Exposure:
Dose – 220 µC/cm2 @ 100 kV (base dose with PEC)
5. Development:
2 min in Amyl Acetate followed by rinse in IPA
N2 blow dry
6. Recess Etch:
RIE – BCl3/Ar (35/5) –25 mT – Bias 100 W – ICP 500 W – Temp 20 ℃ - 1 min
(Expected etch in Ga2O3 – 60 nm, expected etch in ZEP – 250 nm)
7. Stripping:
Immerse in 1165 remover @ 80 ℃ (~ 15 min) followed by clean in AID
Check device Isolation quality by I-V measurement and send the device for oxide
deposition
(20 nm ALD SiO2)
Oxide Anneal - 450 ℃ - 1 min in N2 ambient to improve oxide and interface quality
2. Resist:
PMMA 950 A4 – 4000 RPM / 2000 RPM per s / 50 s (250 nm), 180 ℃ 150 s
3. Exposure:
Dose – 670 μC/cm2 @ 100 kV (base dose with PEC)
4. Development:
45 s in MIBK:IPA (1:3) followed by rinse in IPA
N2 blow dry
5. Oxide Etching
CF4/O2 (15/5) – 10 mT – Bias 20 W – ICP 50 W – Temp 20 ℃ - 2 min
6. Stripping:
Immerse sample in acetone at 65 ℃ for at least 1 hour.
4. Contact:
Ti/Au (50/120) @ 0.7 Å/s
5. Lift-off:
Immerse in Acetone @ 65 ℃ for at least 4 hours. Gentle sonication in fresh acetone
followed by IPA/DI clean and N2 blow dry to complete lift-off.
2. Resist:
PMMA 950 A2 – 2500 RPM / 2500 RPM per s / 40 s (95 nm), 180 ℃ 150 s
PMMA 950 A2 – 4000 RPM, 180 ℃ 150 s (200 nm)
EL9 – 2500 RPM / 2500 RPM per s / 40 s (380 nm), 180 ℃ 150 s
EL11 – 2500 RPM / 2500 RPM per s / 40 s (600 nm), 180 ℃ 150 s
3. Exposure:
Dose – 1000 µC/cm2 @ 100 kV (center dose) (No PEC)
250 μC/cm2 @ 100 kV (side dose) (No PEC)
4. Development:
20 sec in Methanol : IPA (1:1) followed by IPA – (EL-9 selective development)
30 sec in MIBK : IPA (1:3) followed by IPA – (PMMA selective development)
N2 blow dry.
5. Metal deposition:
Ti/Al/Au (30/100/70) @ 0.5 Å/s