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ABSORBSI MOLEKULAR
Spesi absorbing
UV/Vis
Daerah IR
λ : 0,75-300 µm
Metode Nondestructive
Aplikasi
m1 m2
Dua atom dihubungkan oleh ikatan kovalen ditunjukkan seperti 2 beban pada ujung-ujung pegas. Ketika beban dipindah dari
posisi diamnya dan dilepaskan,vibrasinya hanya pada frekwensi tertentu yang tergantung pada massa beban dan konstanta
berhubungan dengan kekakuan pegas.
Lanj Hukum Hooke‘s….
Penetapan Frekuensi regang hukum Hooke‘s
1/ 2
1 f
ν=
2π c (M x M y ) / M x + M y
Dimana :
v = frekuensi vibrasi (cm-1)
c = kecepatan cahaya (cm/s)
f = konstanta kekuatan ikatan (dyne/cm)
Faktor-faktor yang mempengaruhi frekuensi penyerapan
Hibridisasi
Ikatan makin kuat dalam susunan SP>SP2>SP3
C-H (SP): 3300 cm-1 C-H (SP2): 3100 cm-1 C-H (SP3): 2900 cm-1
Resonansi
konjugasi mengurangi energi untuk vibrasi ikatan
keton terisolasi : 1715 cm-1 α,β keton tak jenuh : 1690 cm-1
α,β,γ keton tak jenuh : 1675 cm-1
Terjadinya Penyerapan Sinar IR
Bila molekul menyerap sinar IR dari daerah 0,75-25 µm terjadi
perubahan tingkat energi vibrasi & energi rotasi
Vibrasi tekuk (bending) terjadi perubahan sudut antara dua ikatan kimia
Scissoring
- Bending di dalam bidang
Rocking
Wagging
- Bending di luar bidang
Twisting
Peralatan
Spektrometer IR umumnya double-beam (berkas ganda)
Terdiri dari: sumber radiasi, daerah cuplikan fotometer, kisi difraksi
(monokromator), dan detektor
TS1--1
TS1
TS1--2
TS1
Ti - O - Si
970
TS1--3
TS1
TS1--3
TS1
TS1--4
TS1
TSIL
970
TSIL
800 SIL
550 SIL
1230 452
1105
TIO
TIO
TM4
TM3
TM2
SM
Ti - O - Si
H - O - Si
TS1
NTS1
NBA
NBO
Nb=O
Nb-O-Nb
H-ZSM-5
3742
3733
3
5
2
8 SIL
3726 3
5
2 TS-1 (1%)
6
TS-1 (2%)
3730
3
5
2
6
TS-1 (3%)
TS-1 (4%)
Infrared spectra of the silicalite, ZSM-5 and TS-1 samples in the hydroxyl groups region, after
evacuation at 400oC in vacuum.
3736
3526
TS-1
Absorbance, a.u.
SO42-/TS-1
SO42--Ti/TS-1
Figure 4.5: FTIR spectra of the TS-1, SO42-/TS-1 and SO42-Ti/TS-1 samples after
heated at 400oC for 4 h in vacuum.
HZSM-5
SIL
TS-1 (1%)
TS-1 (1%) - 30
TS-1 (2%) TS-1 (2%) - 52
TS-1 (3%) - 83
TS-1 (4%) - 48
SIL - 11
TS-1 (3%) HZSM-5 162 78
TS-1 (4%)
Infrared spectra of the silicalite, ZSM-5 and TS-1 samples after evacuation at 400oC under vacuum followed by pyridine
adsorption at room temperature and desorption at 150oC for one hour.
0.8
0.8
3742.6 3659.7
0.6
0.4
0.5
0.2
0.4
0.3 0.0
4000.0 3900.0 3800.0 3700.0 3600.0 3500.0 3400.0 3300.0 3200.0 3100.0 3000.0
Testscan Shimadzu FTIR 8000 series 1/cm
-0.2
1700.0 1675.0 1650.0 1625.0 1600.0 1575.0 1550.0 1525.0 1500.0 1475.0 1450.0 1425.0 1400.0
1/cm
3744.5
0.5
1.0
1635.5
1624.0
0.45
0.75 1869.9 1545.8
1452.3
0.4
0.5
0.35
0.25
4000.0 3900.0 3800.0 3700.0 3600.0 3500.0 3400.0 3300.0 3200.0 3100.0 3000.0
Testscan Shimadzu FTIR 8000 series 1/cm 2000.0 1900.0 1800.0 1700.0 1600.0 1500.0 1400.0 1300.0
Testscan Shimadzu FTIR 8000 series 1/cm
per 10
sample 1870 1545 1444 gr sample mg kB kL Luas
tzo 13.4928 2.88398 1.75824 13 0.00592 3.03 3.8 0.7857
tzht 11.50901 3.08807 1.39229 13 0.00592 3.03 3.8 0.7857
tzcu 8.429 1.169 7.7813 13 0.00592 3.03 3.8 0.7857
tbo 5.404 2.0926 2.904 13 0.00592 3.03 3.8 0.7857
tbcu 7.18748 0.0563 10.76245 13 0.00592 3.03 3.8 0.7857
t-zsm5 8.10955 2.2025 1.2672 13 0.00592 3.03 3.8 0.7857
tbea 6.09805 2.48797 2.2744 13 0.00592 3.03 3.8 0.7857
tzcuht 8.5891 1.4065 7.1721 13 0.00592 3.03 3.8 0.7857
sample 1870 1545 1444 1870 1545 1444
tzo 13.4928 2.88398 1.75824 13.4928 2.88398
tzht 11.50901 3.08807 1.39229 13.4928 3.620356
tzcu 8.429 1.169 7.7813 13.4928 1.871288
tbo 5.404 2.0926 2.904 13.4928 5.22484
tbcu 7.18748 0.0563 10.76245 13.4928 0.10569
t-zsm5 8.10955 2.2025 1.2672 13.4928 3.664555
tbea 6.09805 2.48797 2.2744 13.4928 5.504986
tzcuht 8.5891 1.4065 7.1721 13.4928 2.209501
1390
1390
1357
SZ500
400oC 1446
Absorbance / a.u.
996
1074
Absorbance / a.u.
SZ600
13 1
73 3
300oC
1
5 1308
13
58
1 SZ700
2
7 150oC 1541
6
1400 1300 1200 1100 1000 900 1700 1600 1500 1400 1300 1200
Wavenumber, cm-1 Wavenumber, cm-1
NMR
nmr
Liquid - state
Solid - state
Solid-State NMR
Diffraction-based
methods are most suited
to “rigid solids”
But “inversion” to
structural information
may be non-trivial
Solid-State NMR
Solid-state B Solution-state
(ordered structure) o (random-orientation)
Solid-State NMR
H2N
OH
glycine
solution-state solid-state
( )
H IS = − d 3 cos 2 θ − 1 I z S z
where θ is the angle between Bo and the internuclear
distance (r)
The dipolar constant is dependant on the distance
between the nuclear spins and their gyromagnetic ratios z
µo hγ I γ S
d = 3 θ
r
4π rIS B0 1H
13C
µo hγ I γ S
d = 3
4π rIS
Orientation relative to B0
( )
H IS = − d 3 cos 2 θ − 1 I z S z
Rotation about C-
C-N bond
Rotation of NMe3
Whole molecule rotates
and diffuse within crystal
Solid-State NMR
Magic Angle Spinning (MAS)
• Nucleus with magnetic moment (µ) will create a field at a second nucleus at a
distance r away
Magnetic field will have a z component (Bz) in direction of Bo direction
- Influences the frequency of the second nucleus
- Couples the two spins
Magnitude of Bz will depend on the angle of the magnetic moment relative
to B0
Kµ
(
BZ = 3 3 cos 2 θ − 1
r
)
z
r
B0 θ 1H
13C
x
Solid-State NMR
Magic Angle Spinning (MAS)
• Zero z component (Bz) if the angle (θ) relative to B0 is 54.44o
All dipolar interactions disappear at this angle
All chemical shift anisotropy disappear at this angle
Quadrupole broadening is also reduced
Bz = 0
rotor at MAS
Powder Pattern
◇ External reference:
SiO2 Tetramethysilane (TMS)
◇ Spinning rate: 7kHz
◇ Pulse length: 5 µs
SiO ◇ Delay time: 10 s
0 -20 -40 -60 -80 -100 -120 -140 -160 -180 -200
Chemical Shift (ppm)
29Si MAS NMR spectra for Si, SiO2 and SiO powders.
NMR spectra
pristine
0.21 V on charge
0.14 V on charge
0.0 V on charge
2.0 V on discharge
γHB1H/2π γCB1C/2
π
1Ηα
α
13Cα
∆E = γ h Bo / 2π
π
-101.4
-109.4
I I I I
0 -50 -100 -150
δ ppm
γHB1H/2π Hz = γCB1C/2
/2ππ Hz
The increase in the 13C signal depends on the strength of the dipolar
interaction and the duration of the mixing or contact time
NH2 O
aspartic acid
(Microscopy)
Scanning Electron Microscope
SEM
is an incredible tool for seeing the unseen worlds of microspace.
Conventional light microscopes use a series of glass
lenses to bend light waves and create a magnified image.
The Scanning Electron Microscope creates the
magnified images by using electrons instead of
light waves.
The SEM shows very detailed 3-dimensional images at much higher
magnifications than is possible with a light microscope. The images created
without light waves are rendered black and white.
Samples have to be prepared carefully to withstand the vacuum
inside the microscope.
Biological specimens are dried in a special way that prevents
them from shriveling. Because the SEM illuminates them with
electrons, they also have to be made to conduct electricity.
How do you make a mosquito conductive? Our SEM samples are coated
with a very thin layer of gold by a machine called a sputter coater.
Now the prepared specimen is ready.
The sample is placed inside the microscope's vacuum column
through an air-tight door.
After the air is pumped out of the column, an electron gun [at the top] emits a
beam of high energy electrons. This beam travels downward through a series of
magnetic lenses designed to focus the electrons to a very fine spot.
Near the bottom, a set of scanning coils moves the focused beam
back and forth across the specimen, row by row.
As the electron beam hits each spot on the sample, secondary electrons are
knocked loose from its surface. A detector counts these electrons and sends
the signals to an amplifier.
The final image is built up from the number of electrons emitted from
each spot on the sample.
The Scanning Electron Microscope is revealing new levels of detail
and complexity in the amazing world of micro-organisms and
miniature structures.
Here is a small picture of the whole system
Field Emission
Scanning Electron Microscopy (FESEM)
Principle of Operation
A field-emission cathode in the electron gun of a scanning electron microscope
provides narrower probing beams at low as well as high electron energy, resulting
in both improved spatial resolution and minimized sample charging and
damage.
Applications include
•Semiconductor device cross section analyses for gate widths, gate oxides, film
thicknesses, and construction details
•Advanced coating thickness and structure uniformity determination
•Small contamination feature geometry and elemental composition measurement
Why Field Emission SEM?
FESEM produces clearer, less electrostatically distorted images
with spatial resolution down to 1 1/2 nm. That's 3 to 6 times
better than conventional SEM.
Smaller-area contamination spots can be examined at electron
accelerating voltages compatible with Energy Dispersive X-ray
Spectroscopy.
Reduced penetration of low kinetic energy electrons probes
closer to the immediate material surface.
High quality, low voltage images are obtained with negligible
electrical charging of samples. (Accelerating voltages range
from 0.5 to 30 kV.)
Need for placing conducting coatings on insulating materials is
virtually eliminated.
Materials Evaluation:
Surface roughness on implanted silicon wafers
Thermal properties such as thermal conductivity, glass transition
temperature (Tg), and melting temperature of various phases of a
blended polymer measured down to the nanometer scale
Surface profiles and magnetic field mapping of recording media or
reading heads
Nanomechanical testing
Failure Analysis
Rapid hot-spot analysis of powered electronic devices
Defect analysis of compact disk stampers
Quality Control
Surface profiles of thin film and coatings
Metrology of semiconductor devices and compact disks
Surface finish of substrates for thin film deposition
Principle of Operation
The Atomic Force Microcope uses a physical probe raster scanning
across the sample using piezoelectric ceramics. A feedback loop is used
to maintain a constant interaction between the probe and the sample.
The position of the probe and the feedback signal are electronically
recorded to produce a three dimensional map of the surface or other
information depending on the specialty probe used.
Data Output is either a three dimensional image of the surface or a line
profile with height measurements. The surface roughness parameters of
Ra or RMS are also available with either of the above outputs.
Other types of feature analysis include Partical Grain Size Analysis,
Bearing Ratio, Fractal Dimension, Power Spectrum, and Fast Fourier
Transform.
Atomic Force Microscope/Scanning Probe Microscopy
Scanning Auger Microanalysis (SAM)