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7MBR75SB060 IGBT Modules

IGBT MODULE (S series)


600V / 75A / PIM

Features
· Low VCE(sat)
· Compact package
· P.C. board mount
· Converter diode bridge, Dynamic brake circuit

Applications
· Inverter for motor drive
· AC and DC servo drive amplifier
· Uninterruptible power supply

Maximum ratings and characteristics


Absolute maximum ratings (Tc=25°C unless without specified)
Item Symbol Condition Rat ing Unit
Collector-Emitter voltage VCES 600 V
Gate-Emitter voltage VGES ±20 V
Inverter

IC Continuous 75 A
Collector current ICP 1ms 150 A
-IC 75 A
Collector power dissipation PC 1 device 300 W
Collector-Emitter voltage VCES 600 V
Gate-Emitter voltage VGES ±20 V
Collector current
Brake

IC Continuous 50 A
ICP 1ms 100 A
Collector power dissipation PC 1 device 200 W
Repetitive peak reverse voltage VRRM 600 V
Repetitive peak reverse voltage VRRM 800 V
Converter

Average output current IO 50Hz/60Hz sine wave 75 A


Surge current (Non-Repetitive) IFSM Tj=150°C, 10ms 525 A
I 2t (Non-Repetitive) I2 t half sine wave 1378 A 2s
Operating junction temperature Tj +150 °C
Storage temperature Tstg -40 to +125 °C
Isolation between terminal and copper base *2 Viso AC : 1 minute AC 2500 V
voltage between thermistor and others *3 AC 2500 V
Mounting screw torque 3.5 *1 N·m

*1 Recommendable value : 2.5 to 3.5 N·m (M5)


*2 All terminals should be connected together when isolation test will be done.
*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24
should be connected together and shorted to copper base.
IGBT Modules 7MBR75SB060

Electrical characteristics (Tj=25°C unless otherwise specified)


Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Zero gate voltage collector current ICES VCE=600V, VGE=0V 1.0 mA
Gate-Emitter leakage current IGES VCE=0V, VGE=±20V 0.2 µA
Gate-Emitter threshold voltage VGE(th) VCE=20V, IC=75mA 5.5 7.8 8.5 V
Collector-Emitter saturation voltage VCE(sat) VGE=15V, Ic=75A chip 1.8 V
terminal 2.1 2.55
Input capacitance Cies VGE=0V, VCE=10V, f=1MHz 7500 pF
Inverter

Turn-on time ton VCC=300V 0.45 1.2 µs


tr IC=75A 0.25 0.6
tr(i) VGE=±15V 0.08
Turn-off toff RG=33Ω 0.40 1.0
tf 0.05 0.35
Forward on voltage VF IF=75A chip 1.7 V
terminal 2.0 2.7
Reverse recovery time of FRD trr IF=75A 0.3 µs
Zero gate voltage collector current ICES VCES=600V, VGE=0V 1.0 mA
Gate-Emitter leakage current IGES VCE=0V, VGE=±20V 0.2 µA
Collector-Emitter saturation voltage VCE(sat) IC=50A, VGE=15V chip 1.8 V
terminal 2.05 2.5
Brake

Turn-on time ton VCC=300V 0.45 1.2 µs


tr IC=50A 0.25 0.6
Turn-off time toff VGE=±15V 0.40 1.0
tf RG=51Ω 0.05 0.35
Reverse current IRRM VR=600V 1.0 mA
Forward on voltage VFM IF=75A chip 1.1 V
Converter

terminal 1.2 1.5


Reverse current IRRM VR=800V 1.0 mA
Resistance R T=25°C 5000 Ω
Thermistor

T=100°C 465 495 520


B value B T=25/50°C 3305 3375 3450 K

Thermal resistance Characteristics


Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Inverter IGBT 0.42
Inverter FWD 0.90
Thermal resistance ( 1 device ) Rth(j-c)
Brake IGBT 0.63 °C/W
Converter Diode 0.70
Contact thermal resistance * Rth(c-f) With thermal compound 0.05
* This is the value which is defined mounting on the additional cooling fin with thermal compound

Equivalent Circuit Schematic


[Converter] [B ra k e ] [In v er ter ] [Thermistor]
21(P) 2 2 (P 1 )
8 9

2 0 (G u) 1 8 (G v) 1 6 (G w )

1(R) 2(S) 3(T) 1 9 (E u ) 1 7 (E v ) 1 5 (E w )


7 (B ) 4 (U ) 5 (V ) 6 (W )

1 4 (G b) 1 3 (G x) 1 2 (G y) 1 1 (G z)
1 0 (E n )

23(N) 2 4 (N 1 )
IGBT Modules 7MBR75SB060
Characteristics (Representative)

[ Inverter ] [ Inverter ]
Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage
o o
Tj= 25 C (typ.) Tj= 125 C (typ.)
200 200

VGE= 20V 15V 12V VGE= 20V 15V 12V


150 150
Collector current : Ic [ A ]

Collector current : Ic [ A ]
100 100

10V
50 50

10V

0 0
0 1 2 3 4 5 0 1 2 3 4 5
Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ]

[ Inverter ] [ Inverter ]
Collector current vs. Collector-Emitter voltage Collector-Emitter voltage vs. Gate-Emitter voltage
VGE=15V (typ.) o
Tj= 25 C (typ.)
200 10

o
Tj= 25 C
o
Tj= 125 C 8
150
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]

100

50 Ic=150A
2
Ic= 75A
Ic= 37.5A

0 0
0 1 2 3 4 5 10 15 20 25
Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ]

[ Inverter ] [ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.)
o o
VGE=0V, f= 1MHz, Tj= 25 C Vcc=300V, Ic=75A, Tj= 25 C
30000 500 25

10000 400 20
Collector - Emitter voltage : VCE [ V ]
Capacitance : Cies, Coes, Cres [ pF ]

Cies
Gate - Emitter voltage : VGE [ V ]

300 15

1000 200 10

Coes

Cres
100 5

100 0 0
0 5 10 15 20 25 30 35 0 100 200 300 400 500
Collector - Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ]
IGBT Modules 7MBR75SB060

[ Inverter ] [ Inverter ]
Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=33Ω, Tj=25°C Vcc=300V, VGE=±15V, Rg=33Ω, Tj=125°C
1000 1000

ton ton
toff toff

tr tr
Switching time : ton, tr, toff, tf [ nsec ]

Switching time : ton, tr, toff, tf [ nsec ]


100 100
tf

tf

10 10
0 50 100 150 0 50 100 150
Collector current : Ic [ A ] Collector current : Ic [ A ]

[ Inverter ] [ Inverter ]
Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.)
Vcc=300V, Ic=75A, VGE=±15V, Tj=25°C Vcc=300V, VGE=±15V, Rg=33Ω
5000 8

ton

toff
Switching loss : Eon, Eoff, Err [ mJ/pulse ]

o
tr Eon(125 C)
6
Switching time : ton, tr, toff, tf [ nsec ]

1000
o
Eoff(125 C)

o
Eon(25 C)

o
Eoff(25 C)
100 tf

o
Err(125 C)

o
Err(25 C)
10 0
10 100 300 0 50 100 150

Gate resistance : Rg [ Ω ] Collector current : Ic [ A ]

[ Inverter ] [ Inverter ]
Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area
Vcc=300V, Ic=75A, VGE=±15V, Tj=125°C +VGE=15V, -VGE=
<15V, Rg>33Ω, Tj<125°C
15 200 = =

Eon
Switching loss : Eon, Eoff, Err [ mJ/pulse ]

150

10
Collector current : Ic [ A ]

100

Eoff

50

Err
0 0
10 100 300 0 200 400 600 800
Gate resistance : Rg [ Ω ] Collector - Emitter voltage : VCE [ V ]
IGBT Modules 7MBR75SB060

[ Inverter ] [ Inverter ]
Forward current vs. Forward on voltage (typ.) Reverse recovery characteristics (typ.)
Vcc=300V, VGE=±15V, Rg=33Ω
200 300

150 o
o
Tj=125 C trr(125 C)

Reverse recovery time : trr [ nsec ]


Reverse recovery current : Irr [ A ]
100
Forward current : IF [ A ]

o
Tj=25 C

o
trr(25 C)
100
o
Irr(125 C)
o
Irr(25 C)

50

0 10
0 1 2 3 0 50 100 150
Forward on voltage : VF [ V ] Forward current : IF [ A ]

[ Converter ]
Forward current vs. Forward on voltage (typ.)

200

o o
Tj= 25 C Tj= 125 C
150
Forward current : IF [ A ]

100

50

0
0.0 0.4 0.8 1.2 1.6 2.0
Forward on voltage : VFM [ V ]

[ Thermistor ]
Transient thermal resistance Temperature characteristic (typ.)

5 200

100

1 FWD[Inverter]
Thermal resistanse : Rth(j-c) [ C/W ]

Conv. Diode
o

IGBT[Brake]
Resistance : R [ k Ω ]

10
IGBT[Inverter]

0.1

0.01 0.1
0.001 0.01 0.1 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
Pulse width : Pw [ sec ] Temperature [
o
C]
IGBT Modules 7MBR75SB060

[ Brake ] [ Brake ]
Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage
o o
Tj= 25 C (typ.) Tj= 125 C (typ.)
120 120

VGE= 20V 15V 12V VGE= 20V 15V 12V


100 100

80 80
Collector current : Ic [ A ]

Collector current : Ic [ A ]
60 60

40 40
10V

20 10V 20

0 0
0 1 2 3 4 5 0 1 2 3 4 5
Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ]

[ Brake ] [ Brake ]
Collector current vs. Collector-Emitter voltage Collector-Emitter voltage vs. Gate-Emitter voltage
VGE=15V (typ.) o
Tj= 25 C (typ.)
120 10

o o
Tj= 25 C Tj= 125 C
100
8
Collector - Emitter voltage : VCE [ V ]

80
Collector current : Ic [ A ]

60

40

Ic=100A
2
20 Ic= 50A
Ic= 25A

0 0
0 1 2 3 4 5 10 15 20 25
Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ]

[ Brake ] [ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.)
o o
VGE=0V, f= 1MHz, Tj= 25 C Vcc=300V, Ic=50A, Tj= 25 C
20000 500 25

10000

400 20
Collector - Emitter voltage : VCE [ V ]
Capacitance : Cies, Coes, Cres [ pF ]

Cies
Gate - Emitter voltage : VGE [ V ]

300 15

1000
200 10

Coes
Cres 100 5

100 0 0
0 5 10 15 20 25 30 35 0 50 100 150 200 250 300
Collector - Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ]
IGBT Modules 7MBR75SB060

M712
Outline Drawings, mm

122±1
8-R2.25±0.3
110±0.3
4-ø5.5±0.3 94.5±0.3
+0.5
13.09 15.24 19.05 19.05 15.24 3.81 4=15.24 11.5 0

21 20 19 18 17 16 15 14 10

+0.5
0
11.5
19.697

3.81

9
99.6±0.3
11.43

22

57.5±0.3
50±0.3

8
62±1

3.81
15.24
39.9±0.3
3.81

23
11.43

15.475

7
3.81
11.665

24

1 2 3 4 5 6
4.198

A A
4.055 14.995 15.24 15.24 15.24 15.24 15.24 22.86

1.15±0.2

1.5±0.3
6±0.3
ø0.4 ø2.5±0.1
0.8±0.2

ø2.1±0.1

Section A-A
3.5±0.5
1.1±0.3

1±0.2
2.9±0.3
20.5±1
17±1

6.5±0.5

Shows theory dimensions

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