NGTG50N60FLWG

IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss.

Features http://onsemi.com
• Low Saturation Voltage using Trench with Field Stop Technology
• Low Switching Loss Reduces System Power Dissipation 50 A, 600 V
• Optimized for High Speed Switching
VCEsat = 1.65 V
• 5 ms Short−Circuit Capability
• These are Pb−Free Devices
C
Typical Applications
• Power Factor Correction
• Solar Inverters
• Uninterruptable Power Supply (UPS) G

ABSOLUTE MAXIMUM RATINGS E

Rating Symbol Value Unit
Collector−emitter voltage VCES 600 V
Collector current IC A
@ TC = 25°C 100
@ TC = 100°C 50
Pulsed collector current, Tpulse ICM 200 A G TO−247
limited by TJmax C
E CASE 340L
Short−circuit withstand time tSC 5 STYLE 4
ms
VGE = 15 V, VCE = 400 V,
TJ ≤ +150°C
Gate−emitter voltage VGE $20 V MARKING DIAGRAM
Power Dissipation PD W
@ TC = 25°C 223
@ TC = 100°C 89
Operating junction temperature TJ −55 to +150 °C
range G50N60FL
AYWWG
Storage temperature range Tstg −55 to +150 °C
Lead temperature for soldering, 1/8” TSLD 260 °C
from case for 5 seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability. A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

ORDERING INFORMATION
Device Package Shipping
NGTG50N60FLWG TO−247 30 Units / Rail
(Pb−Free)

© Semiconductor Components Industries, LLC, 2012 1 Publication Order Number:

November, 2012 − Rev. 0 NGTG50N60FLW/D
 NGTG50N60FLWG

THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal resistance junction−to−case, for IGBT RqJC 0.56 °C/W
Thermal resistance junction−to−ambient RqJA 40 °C/W

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Test Conditions Symbol Min Typ Max Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage, VGE = 0 V, IC = 500 mA V(BR)CES 600 − − V
gate−emitter short−circuited

Collector−emitter saturation voltage VGE = 15 V, IC = 50 A VCEsat 1.40 1.65 1.90 V

VGE = 15 V, IC = 25 A, TJ = 150°C − 1.85 −

Gate−emitter threshold voltage VGE = VCE, IC = 350 mA VGE(th) 4.5 5.5 6.5 V
Collector−emitter cut−off current, gate− VGE = 0 V, VCE = 600 V ICES − − 0.5 mA
emitter short−circuited VGE = 0 V, VCE = 600 V, TJ = 150°C − − 2

Gate leakage current, collector−emitter VGE = 20 V , VCE = 0 V IGES − − 200 nA

short−circuited

DYNAMIC CHARACTERISTIC
Input capacitance Cies − 7302 − pF
Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Coes − 220 −
Reverse transfer capacitance Cres − 190 −
Gate charge total Qg − 310 − nC
Gate to emitter charge VCE = 480 V, IC = 50 A, VGE = 15 V Qge − 60 −
Gate to collector charge Qgc − 150 −
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time td(on) − 116 − ns
Rise time tr − 43 −
Turn−off delay time TJ = 25°C td(off) − 292 −
Fall time VCC = 400 V, IC = 50 A tf − 78 −
Rg = 10 W
Turn−on switching loss VGE = 0 V/ 15 V* Eon − 1.1 − mJ
Turn−off switching loss Eoff − 0.6 −
Total switching loss Ets − 1.7 −
Turn−on delay time td(on) − 110 − ns
Rise time tr − 45 −
Turn−off delay time TJ = 150°C td(off) − 300 −
Fall time VCC = 400 V, IC = 50 A tf − 105 −
Rg = 10 W
Turn−on switching loss VGE = 0 V/ 15 V* Eon − 1.4 − mJ
Turn−off switching loss Eoff − 1.1 −
Total switching loss Ets − 2.5 −
*Includes diode reverse recovery loss using NGTB50N60FLWG.

http://onsemi.com
2
 NGTG50N60FLWG

TYPICAL CHARACTERISTICS

250 300
TJ = 25°C TJ = 150°C
VGE = 17 V to 13 V
VGE = 17 V to 13 V
IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

250
200

11 V 200
150
150 11 V
10 V
100 10 V
100

9V 9V
50 50
7V 8V
8V 7V
0 0
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics Figure 2. Output Characteristics

250 200
TJ = −55°C
180
VGE = 17 V to 13 V
IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

200 160 TJ = 25°C TJ = 150°C

11 V 140
150 120
100
10 V 80
100
60
50 7V 40
9V
20
8V
0 0
0 1 2 3 4 5 6 7 8 0 4 8 12 16
VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics

3.00 100000

IC = 100 A
2.50
VCE, COLLECTOR−EMITTER

10000 Cies
CAPACITANCE (pF)

2.00 IC = 50 A
VOLTAGE (V)

1.50 IC = 25 A 1000

1.00 IC = 5 A Coes
100
0.50 Cres

0.00 10
−75 −25 25 75 125 175 0 10 20 30 40 50 60 70 80 90 100
TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance

http://onsemi.com
3
 NGTG50N60FLWG

TYPICAL CHARACTERISTICS

20

VGE, GATE−EMITTER VOLTAGE (V)

15 VCE = 480 V

10

0
0 50 100 150 200 250 300 350
QG, GATE CHARGE (nC)
Figure 7. Typical Gate Charge

1.6 1000

1.4 td(off)
Eon
SWITCHING LOSS (mJ)

1.2
SWITCHING TIME (ns)

td(on)
100
1 tf
Eoff
0.8 tr

0.6
10
VCE = 400 V VCE = 400 V
0.4
VGE = 15 V VGE = 15 V
0.2 IC = 50 A IC = 50 A
Rg = 10 W Rg = 10 W
0 1
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
Figure 8. Switching Loss vs. Temperature Figure 9. Switching Time vs. Temperature

4.5 1000
VCE = 400 V
4 VGE = 15 V td(off)
3.5 TJ = 150°C
tf
SWITCHING LOSS (mJ)

SWITCHING TIME (ns)

Rg = 10 W Eon
3 100
td(on)
2.5
Eoff
2
tr
1.5 10
VCE = 400 V
1 VGE = 15 V
TJ = 150°C
0.5
Rg = 10 W
0 1
8 20 32 44 56 68 80 92 104 8 20 32 44 56 68 80 92 104
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 10. Switching Loss vs. IC Figure 11. Switching Time vs. IC

http://onsemi.com
4
 NGTG50N60FLWG

TYPICAL CHARACTERISTICS

7 10000
VCE = 400 V
6 VGE = 15 V
td(off)
IC = 50 A Eon
SWITCHING LOSS (mJ)

SWITCHING TIME (ns)

TJ = 150°C 1000
5 td(on)

4
100 tf
3 Eoff
tr
2 VCE = 400 V
10
VGE = 15 V
1 IC = 50 A
TJ = 150°C
0 1
5 15 25 35 45 55 65 75 85 5 15 25 35 45 55 65 75 85
RG, GATE RESISTOR (W) RG, GATE RESISTOR (W)
Figure 12. Switching Loss vs. RG Figure 13. Switching Time vs. RG

3 1000
VGE = 15 V
IC = 50 A td(off)
2.4 Rg = 10 W
SWITCHING LOSS (mJ)

SWITCHING TIME (ns)

TJ = 150°C Eon td(on)

100
1.8 tf
tr
Eoff
1.2
10
VGE = 15 V
0.6 IC = 50 A
Rg = 10 W
TJ = 150°C
0 1
175 225 275 325 375 425 475 525 575 175 225 275 325 375 425 475 525 575
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 14. Switching Loss vs. VCE Figure 15. Switching Time vs. VCE

1000 1000

50 ms
IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

100 100 ms

1 ms 100
10 dc operation

1
Single Nonrepetitive 10
Pulse TC = 25°C
0.1 Curves must be derated
linearly with increase
in temperature VGE = 15 V, TC = 125°C
0.01 1
1 10 100 1000 1 10 100 1000
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 16. Safe Operating Area Figure 17. Reverse Bias Safe Operating Area

http://onsemi.com
5
 NGTG50N60FLWG

TYPICAL CHARACTERISTICS

50% Duty Cycle RqJC = 0.56

20%
0.1 10% Ri (°C/W) ti (sec)
R(t) (°C/W)

Junction R1 R2 Rn Case 0.02087 1.0E−4

5% 0.05041 5.48E−5
0.07919 0.002
2% Ci = ti/Ri 0.11425 0.03
0.01 0.19393 0.1
1%
C1 C2 Cn 0.09951 2.0

Single Pulse Duty Factor = t1/t2

Peak TJ = PDM x ZqJC + TC
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE TIME (sec)
Figure 18. IGBT Transient Thermal Impedance

Figure 19. Test Circuit for Switching Characteristics

http://onsemi.com
6
 NGTG50N60FLWG

Figure 20. Definition of Turn On Waveform

http://onsemi.com
7
 NGTG50N60FLWG

Figure 21. Definition of Turn Off Waveform

http://onsemi.com
8
 NGTG50N60FLWG

PACKAGE DIMENSIONS

TO−247
CASE 340L−02
ISSUE F

−T− NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
C Y14.5M, 1982.
−B− 2. CONTROLLING DIMENSION: MILLIMETER.
E
MILLIMETERS INCHES
U L
DIM
A
MIN
20.32
MAX
21.08
MIN
0.800
MAX
8.30
N B 15.75 16.26 0.620 0.640
4
C 4.70 5.30 0.185 0.209
A D 1.00 1.40 0.040 0.055
−Q− E 1.90 2.60 0.075 0.102
1 2 3 0.63 (0.025) M T B M F 1.65 2.13 0.065 0.084
G 5.45 BSC 0.215 BSC
H 1.50 2.49 0.059 0.098
P J 0.40 0.80 0.016 0.031
−Y− K 19.81 20.83 0.780 0.820
L 5.40 6.20 0.212 0.244
K N 4.32 5.49 0.170 0.216
P --- 4.50 --- 0.177
Q 3.55 3.65 0.140 0.144
U 6.15 BSC 0.242 BSC
W 2.87 3.12 0.113 0.123
W J
F 2 PL H
STYLE 4:
PIN 1. GATE
G 2. COLLECTOR
D 3 PL 3. EMITTER
4. COLLECTOR
0.25 (0.010) M Y Q S

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com
Literature Distribution Center for ON Semiconductor USA/Canada
P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local
Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative

http://onsemi.com NGTG50N60FLW/D
9