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FDD6637 35V P-Channel PowerTrench MOSFET
March 2015

FDD6637
35V P-Channel PowerTrench MOSFET

General Description Features


This P-Channel MOSFET has been produced using • –55 A, –35 V RDS(ON) = 11.6 mΩ @ VGS = –10 V
Fairchild Semiconductor’s proprietary PowerTrench RDS(ON) = 18 mΩ @ VGS = –4.5 V
technology to deliver low Rdson and optimized Bvdss
capability to offer superior performance benefit in the • High performance trench technology for extremely

applications. low RDS(ON)

• RoHS Compliant
Applications
• Inverter
• Power Supplies

D
G
G

S
D-PAK
TO-252 S
(TO-252)

Absolute Maximum Ratings T A =25 oC unless otherwise noted

Symbol Parameter Ratings Units


VDSS Drain-Source Voltage –35 V
VDS(Avalanche) Drain-Source Avalanche Voltage (maximum) (Note 4) –40 V
VGSS Gate-Source Voltage ±25 V
ID Continuous Drain Current @TC=25°C (Note 3) –55 A
@TA=25°C (Note 1a) –13
Pulsed (Note 1a) –100
PD Power Dissipation @TC=25°C (Note 3) 57 W
@TA=25°C (Note 1a) 3.1
@TA=25°C (Note 1b) 1.3
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C

Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case (Note 1) 2.2 °C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40
RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96

Package Marking and Ordering Information


Device Marking Device Package Reel Size Tape width Quantity
FDD6637 FDD6637 D-PAK (TO-252) 13’’ 16mm 2500 units

2006 Fairchild Semiconductor Corporation www.fairchildsemi.com


FDD6637 Rev. 1.2
FDD6637 35V P-Channel PowerTrench MOSFET
Electrical Characteristics T A = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units


Drain-Source Avalanche Ratings
EAS Drain-Source Avalanche Energy
VDD = -35 V, ID= -11 A, L=1mH 61 mJ
(Single Pulse)
IAS Drain-Source Avalanche Current –14 A

Off Characteristics(Note 2)
Drain–Source Breakdown
BVDSS VGS = 0 V, ID = –250 µA –35 V
Voltage
IDSS Zero Gate Voltage Drain Current VDS = –28 V, VGS = 0 V –1 µA
IGSS Gate–Body Leakage VGS = ±25 V, VDS = 0 V ±100 nA

On Characteristics (Note 2)

VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –1 –1.6 –3 V


RDS(on) Static Drain–Source VGS = –10 V, ID = –14 A 9.7 11.6 mΩ
On–Resistance VGS = –4.5 V, ID = –11 A 14.4 18
VGS = –10 V, ID = –14 A, TJ=125°C 14.7 19
gFS Forward Transconductance VDS =–5 V, ID = –14 A 35 S

Dynamic Characteristics
Ciss Input Capacitance 2370 pF
VDS = –20 V, V GS = 0 V,
Coss Output Capacitance 470 pF
f = 1.0 MHz
Crss Reverse Transfer Capacitance 250 pF
RG Gate Resistance f = 1.0 MHz 3.6 Ω

Switching Characteristics (Note 2)

td(on) Turn–On Delay Time 18 32 ns


tr Turn–On Rise Time VDD = –20 V, ID = –1 A, 10 20 ns
td(off) Turn–Off Delay Time VGS = –10 V, RGEN = 6 Ω 62 100 ns
tf Turn–Off Fall Time 36 58 ns
Qg Total Gate Charge, VGS = –10V 45 63 nC
Qg Total Gate Charge, VGS = –5V VDS = – 20 V, ID = –14 A 25 35 nC
Qgs Gate–Source Charge 7 nC
Qgd Gate–Drain Charge 10 nC

FDD6637 Rev. 1.2 www.fairchildsemi.com


FDD6637 35V P-Channel PowerTrench MOSFET
Electrical Characteristics T A = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units


Drain–Source Diode Characteristics
VSD Drain–Source Diode Forward V
VGS = 0 V, IS = –14 A (Note 2) –0.8 –1.2
Voltage
trr Diode Reverse Recovery Time IF = –14 A, diF/dt = 100 A/µs 28 ns
Qrr Diode Reverse Recovery Charge 15 nC

Notes:
1. RθJA is the sum of the junction-to-case and case -to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) RθJA = 40°C/W when mounted on a b) RθJA = 96°C/W when mounted


1in 2 pad of 2 oz copper on a minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

PD
3. Maximum current is calculated as: R DS(ON)

where PD is maximum power dissipation at T C = 25°C and RDS(on) is at T J(max) and V GS = 10V. Package current limitation is 21A

4. BV(avalanche) Single-Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device.

FDD6637 Rev. 1.2 www.fairchildsemi.com


FDD6637 35V P-Channel PowerTrench MOSFET
Typical Characteristics

100 2.4
VGS = -10V -6.0V VGS = -3.5V
-5.0V

DRAIN-SOURCE ON-RESISTANCE
2.2
-4.5V
80
-I D, DRAIN CURRENT (A)

NORMALIZED
-4.0V 1.8
60

1.6 -4.0V
-4.5V
40 -3.5V
1.4 -5.0V
-6.0V
1.2
20 -3.0V -8.0V
-10V
1

0 0.8
0 1 2 3 4 0 20 40 60 80 100
-VD S, DRAIN-SOURCE VOLTAGE (V) -I D, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with


Drain Current and Gate Voltage

1.8 0.05
ID = -14A
V GS = -10V I D = -7A
DRAIN-SOURCE ON-RESISTANCE

R DS(ON), ON-RESISTANCE (OHM)

1.6
0.04

1.4
NORMALIZED

0.03
o
1.2 TA = 125 C

0.02
1
TA = 25o C

0.01
0.8

0.6 0
-50 -25 0 25 50 75 100 125 150 2 4 6 8 10
o
TJ , JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with


Temperature Gate-to-Source Voltage

100 1000
VD S = -5V VGS = 0V
-I S, REVERSE DRAIN CURRENT (A)

100
80 o
-I D , DRAIN CURRENT (A)

T A = -55 C o
125 C 10

60 TA = 125o C
1
o
25 C
0.1 o
40 25 C

0.01 -55 C
o

20
0.001

0 0.0001
1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4
-VGS, GATE TO SOURCE VOLTAGE (V) -VSD , BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation


with Source Current and Temperature

FDD6637 Rev. 1.2 www.fairchildsemi.com


FDD6637 35V P-Channel PowerTrench MOSFET
Typical Characteristics

10 3200
I D = -14A VDS = 10V f = 1MHz
-VGS, GATE-SOURCE VOLTAGE (V)

30V VGS = 0 V
8
2400

CAPACITANCE (pF)
20V C iss
6

1600

C oss
800
2

C rss
0 0
0 10 20 30 40 50 0 5 10 15 20 25 30
Qg, GATE CHARGE (nC) VD S, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics

1000 100
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
Rθ JA = 96°C/W
100 100µs 80 T A = 25°C
-I D , DRAIN CURRENT (A)

1ms
R DS(ON) LIMIT 10ms
10 100ms 60
1s
10s
DC 40
1
VGS = -10V
SINGLE PULSE
o 20
0.1 R θJA = 96 C/W
o
T A = 25 C
0
0.01 0.01 0.1 1 10 100 1000
0 0 1 10 100
t1 , TIME (sec)
-VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum
Power Dissipation

100 1000
I(pk), PEAK TRANSIENT CURRENT (A)

SINGLE PULSE
Rθ JA = 96°C/W
I (AS) , AVALANCHE CURRENT

80 T A = 25°C
o
TJ = 25 C
100
60

40
10

20

0 1
0.01 0.1 1 10 100 1000 0.001 0.01 0.1 1 10
t1 , TIME (sec) tA V, TIME IN AVANCHE(ms)

Figure 11. Single Pulse Maximum Peak


Current Figure 12. Unclamped Inductive
Switching Capability

FDD6637 Rev. 1.2 www.fairchildsemi.com


FDD6637 35V P-Channel PowerTrench MOSFET
Typical Characteristics

1
TRANSIENT THERMAL RESISTANCE

D = 0.5
r(t), NORMALIZED EFFECTIVE

Rθ JA(t) = r(t) * RθJA


0.2
Rθ JA = 96 °C/W
0.1 0.1
0.05
P(pk)
0.02
t1
0.01
0.01 t2

T J - T A = P * Rθ JA (t)
SINGLE PULSE
Duty Cycle, D = t1 / t 2

0.001
0.001 0.01 0.1 1 10 100 1000
t 1, TIME (sec)

Figure 13. Transient Thermal Response Curve


Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.

FDD6637 Rev. 1.2 www.fairchildsemi.com


FDD6637 35V P-Channel PowerTrench MOSFET
Test Circuits and Waveforms

L BVDSS
VDS
tP
VG VDS
RGEN DUT
- IAS
VDD VDD
0V +
VGS tp IAS
vary tP to obtain
required peak IAS 0.01Ω

tAV

Figure 14. Unclamped Inductive Load Test Figure 15. Unclamped Inductive Waveforms
Circuit

Drain Current Regulator


Same type as DUT

-
QG
50kΩ 10V
10V
10µF
+ 1µF -
VGS Q GS QGD
VDD
+
VG
DUT

Ig(REF) Charge, (nC)

Figure 16. Gate Charge Test Circuit Figure 17. Gate Charge Waveform

RL t ON tOFF
VDS
t d(ON) td(OFF)
VGS - VDS tr tf
90% 90%
RGEN DUT VDD
+
10% 10%
VGS 0V
Pulse Width ≤ 1µs
Duty Cycle ≤ 0.1% 90%
V GS
50% 50%

10%
Pulse Width
0V

Figure 18. Switching Time Test Circuit Figure 19. Switching Time Waveforms

FDD6637 Rev. 1.2 www.fairchildsemi.com


ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.

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